TWI364833B - Methods and system for reinforcing a bond pad - Google Patents

Methods and system for reinforcing a bond pad Download PDF

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Publication number
TWI364833B
TWI364833B TW093127180A TW93127180A TWI364833B TW I364833 B TWI364833 B TW I364833B TW 093127180 A TW093127180 A TW 093127180A TW 93127180 A TW93127180 A TW 93127180A TW I364833 B TWI364833 B TW I364833B
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TW
Taiwan
Prior art keywords
metal
layer
reinforcing layer
reinforcing
bonding pad
Prior art date
Application number
TW093127180A
Other languages
English (en)
Chinese (zh)
Other versions
TW200515577A (en
Inventor
Mark Bachman
Daniel Patrick Chesire
Sailesh Mansinh Merchant
John William Osenbach
Kurt George Steiner
Original Assignee
Agere Systems Inc
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=33311157&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI364833(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Agere Systems Inc filed Critical Agere Systems Inc
Publication of TW200515577A publication Critical patent/TW200515577A/zh
Application granted granted Critical
Publication of TWI364833B publication Critical patent/TWI364833B/zh

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L2224/02165—Reinforcing structures
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093127180A 2003-09-30 2004-09-08 Methods and system for reinforcing a bond pad TWI364833B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/675,260 US6960836B2 (en) 2003-09-30 2003-09-30 Reinforced bond pad

Publications (2)

Publication Number Publication Date
TW200515577A TW200515577A (en) 2005-05-01
TWI364833B true TWI364833B (en) 2012-05-21

Family

ID=33311157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127180A TWI364833B (en) 2003-09-30 2004-09-08 Methods and system for reinforcing a bond pad

Country Status (5)

Country Link
US (1) US6960836B2 (enExample)
JP (2) JP4959929B2 (enExample)
KR (1) KR101150312B1 (enExample)
GB (1) GB2406707B (enExample)
TW (1) TWI364833B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372153B2 (en) * 2003-10-07 2008-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit package bond pad having plurality of conductive members
JP4517843B2 (ja) * 2004-12-10 2010-08-04 エルピーダメモリ株式会社 半導体装置
US7404513B2 (en) * 2004-12-30 2008-07-29 Texas Instruments Incorporated Wire bonds having pressure-absorbing balls
US20080014732A1 (en) * 2006-07-07 2008-01-17 Yanping Li Application of PVD W/WN bilayer barrier to aluminum bondpad in wire bonding
DE102006043133B4 (de) * 2006-09-14 2009-09-24 Infineon Technologies Ag Anschlusspad zu einem Kontaktieren eines Bauelements und Verfahren zu dessen Herstellung
US7652378B2 (en) * 2006-10-17 2010-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Aluminum-based interconnection in bond pad layer
DE102006052202B3 (de) * 2006-11-06 2008-02-21 Infineon Technologies Ag Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements
JP4694519B2 (ja) * 2007-02-28 2011-06-08 富士通株式会社 マイクロ構造体およびマイクロ構造体製造方法
DE102007011126B4 (de) 2007-03-07 2009-08-27 Austriamicrosystems Ag Halbleiterbauelement mit Anschlusskontaktfläche
US7750852B2 (en) * 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5034740B2 (ja) 2007-07-23 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US7919839B2 (en) * 2007-07-24 2011-04-05 Northrop Grumman Systems Corporation Support structures for on-wafer testing of wafer-level packages and multiple wafer stacked structures
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7727781B2 (en) * 2008-07-22 2010-06-01 Agere Systems Inc. Manufacture of devices including solder bumps
JP5677115B2 (ja) * 2011-02-07 2015-02-25 セイコーインスツル株式会社 半導体装置
JP5772926B2 (ja) 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
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US20050067709A1 (en) 2005-03-31
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