JP5677115B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5677115B2 JP5677115B2 JP2011024241A JP2011024241A JP5677115B2 JP 5677115 B2 JP5677115 B2 JP 5677115B2 JP 2011024241 A JP2011024241 A JP 2011024241A JP 2011024241 A JP2011024241 A JP 2011024241A JP 5677115 B2 JP5677115 B2 JP 5677115B2
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
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- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05184—Tungsten [W] as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Description
まず、ボンディングパッドを有する半導体装置の構造について説明する。図1は、本発明に係る半導体装置の実施例を示す断面模式図である。
図3は変形例1の実施例を示す断面模式図である。図1に示した実施例においては、第一金属膜11は絶縁膜14の上に設けられたが、図3に示すように、第一金属膜11を絶縁膜14に埋め込んでもよい。そして、第二金属膜12がその上に設けられる。この時、絶縁膜14は溝を有し、その溝に第一金属膜11が埋め込まれる。この溝の底面は、略平面状に形成される。この構造においては、第一金属膜は段差を形成しないので厚く形成することが可能となる。これにより第二金属膜12の応力による歪みは第一金属膜11によって一層吸収されやすくなる。
図4は変形例2の実施例を示す断面模式図である。ほぼ図3の構成と同じであるが、異なっているのは、絶縁膜14の溝の底面は、図3では、略平面状に形成するが、図4に示すように、下に凸の曲面あるいは略球面の一部となるように形成している点である。つまり、第一金属膜11の底面を、下に凸の曲面あるいは略球面の一部となるように形成して良い。このようにすると、第一金属膜11の底面における角部への応力集中が防止されるので、第二金属膜12の応力による歪みは第一金属膜11によってさらに吸収されやすくなる。
11 第一金属膜
12 第二金属膜
13 第三金属膜
14 絶縁膜
15 保護膜
Claims (4)
- ボンディングパッドを有する半導体装置であって、
半導体基板と、
前記半導体基板の表面に設けられた絶縁膜と、
前記絶縁膜の表面に設けられた溝に埋め込まれ、前記絶縁膜と側面および底部が接して配置された第一金属膜と、
前記第一金属膜の上に設けられた第二金属膜と、
前記第二金属膜の上に設けられた第三金属膜と、
前記第三金属膜の上に開口部を有し、前記開口部以外で前記第一金属膜と前記第二金属膜と前記第三金属膜とを覆う保護膜と、を有し、
前記第二金属膜および前記第三金属膜とは同じ大きさを有し、前記第一金属膜よりも小さく設けられており、
前記第三金属膜は、前記第二金属膜および前記第三金属膜よりも厚さが厚く、
前記第二金属膜のヤング率は、前記第一金属膜のヤング率及び前記第三金属膜のヤング率よりも大きい半導体装置。 - 前記溝の底面は、平面状に形成されている請求項1記載の半導体装置。
- 前記溝の底面は、下に凸の曲面あるいは球面の一部となるように形成されている請求項1記載の半導体装置。
- 前記第一金属膜及び前記第三金属膜は、アルミニウムにより形成されており、前記第二金属膜は、銅あるいはタングステンのいずれかにより形成されている請求項1乃至3のいずれか1項に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011024241A JP5677115B2 (ja) | 2011-02-07 | 2011-02-07 | 半導体装置 |
US13/362,678 US20120199977A1 (en) | 2011-02-07 | 2012-01-31 | Semiconductor device |
KR1020120011285A KR101903188B1 (ko) | 2011-02-07 | 2012-02-03 | 반도체 장치 |
TW101103779A TW201304011A (zh) | 2011-02-07 | 2012-02-06 | 半導體裝置 |
CN201210026493.7A CN102629568B (zh) | 2011-02-07 | 2012-02-07 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011024241A JP5677115B2 (ja) | 2011-02-07 | 2011-02-07 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012164825A JP2012164825A (ja) | 2012-08-30 |
JP2012164825A5 JP2012164825A5 (ja) | 2014-01-30 |
JP5677115B2 true JP5677115B2 (ja) | 2015-02-25 |
Family
ID=46587796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011024241A Expired - Fee Related JP5677115B2 (ja) | 2011-02-07 | 2011-02-07 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120199977A1 (ja) |
JP (1) | JP5677115B2 (ja) |
KR (1) | KR101903188B1 (ja) |
CN (1) | CN102629568B (ja) |
TW (1) | TW201304011A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5772926B2 (ja) | 2013-01-07 | 2015-09-02 | 株式会社デンソー | 半導体装置 |
JP2016143804A (ja) * | 2015-02-03 | 2016-08-08 | トヨタ自動車株式会社 | 半導体装置 |
JP2017224753A (ja) * | 2016-06-16 | 2017-12-21 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP6897141B2 (ja) | 2017-02-15 | 2021-06-30 | 株式会社デンソー | 半導体装置とその製造方法 |
JP2018186144A (ja) | 2017-04-25 | 2018-11-22 | 株式会社村田製作所 | 半導体装置及びパワーアンプモジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09330928A (ja) * | 1996-06-13 | 1997-12-22 | Toshiba Corp | 配線層の形成方法 |
JP2005019493A (ja) * | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置 |
US6960836B2 (en) * | 2003-09-30 | 2005-11-01 | Agere Systems, Inc. | Reinforced bond pad |
US20050215048A1 (en) * | 2004-03-23 | 2005-09-29 | Lei Li | Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits |
US7741714B2 (en) * | 2004-11-02 | 2010-06-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure with stress-buffering layer capping interconnection metal layer |
US7656045B2 (en) * | 2006-02-23 | 2010-02-02 | Freescale Semiconductor, Inc. | Cap layer for an aluminum copper bond pad |
TWI316295B (en) * | 2006-05-17 | 2009-10-21 | Au Optronics Corp | Thin film transistor |
JP2009016619A (ja) * | 2007-07-05 | 2009-01-22 | Denso Corp | 半導体装置及びその製造方法 |
US8178980B2 (en) * | 2008-02-05 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad structure |
US8030780B2 (en) * | 2008-10-16 | 2011-10-04 | Micron Technology, Inc. | Semiconductor substrates with unitary vias and via terminals, and associated systems and methods |
US8202741B2 (en) * | 2009-03-04 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Method of bonding a semiconductor device using a compliant bonding structure |
-
2011
- 2011-02-07 JP JP2011024241A patent/JP5677115B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-31 US US13/362,678 patent/US20120199977A1/en not_active Abandoned
- 2012-02-03 KR KR1020120011285A patent/KR101903188B1/ko active IP Right Grant
- 2012-02-06 TW TW101103779A patent/TW201304011A/zh unknown
- 2012-02-07 CN CN201210026493.7A patent/CN102629568B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102629568B (zh) | 2016-05-04 |
JP2012164825A (ja) | 2012-08-30 |
TW201304011A (zh) | 2013-01-16 |
CN102629568A (zh) | 2012-08-08 |
KR101903188B1 (ko) | 2018-10-01 |
US20120199977A1 (en) | 2012-08-09 |
KR20120090827A (ko) | 2012-08-17 |
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