TWI358748B - Method for forming resist pattern, semiconductor d - Google Patents

Method for forming resist pattern, semiconductor d Download PDF

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Publication number
TWI358748B
TWI358748B TW95146258A TW95146258A TWI358748B TW I358748 B TWI358748 B TW I358748B TW 95146258 A TW95146258 A TW 95146258A TW 95146258 A TW95146258 A TW 95146258A TW I358748 B TWI358748 B TW I358748B
Authority
TW
Taiwan
Prior art keywords
pattern
resist pattern
group
resist
thickening material
Prior art date
Application number
TW95146258A
Other languages
English (en)
Chinese (zh)
Other versions
TW200811918A (en
Inventor
Miwa Kozawa
Koji Nozaki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200811918A publication Critical patent/TW200811918A/zh
Application granted granted Critical
Publication of TWI358748B publication Critical patent/TWI358748B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
TW95146258A 2006-08-17 2006-12-11 Method for forming resist pattern, semiconductor d TWI358748B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006222498A JP4724073B2 (ja) 2006-08-17 2006-08-17 レジストパターンの形成方法、半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200811918A TW200811918A (en) 2008-03-01
TWI358748B true TWI358748B (en) 2012-02-21

Family

ID=38973388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95146258A TWI358748B (en) 2006-08-17 2006-12-11 Method for forming resist pattern, semiconductor d

Country Status (6)

Country Link
US (2) US8119325B2 (US08119325-20120221-C00001.png)
JP (1) JP4724073B2 (US08119325-20120221-C00001.png)
KR (1) KR100845486B1 (US08119325-20120221-C00001.png)
CN (1) CN101226335B (US08119325-20120221-C00001.png)
DE (1) DE102006058795B4 (US08119325-20120221-C00001.png)
TW (1) TWI358748B (US08119325-20120221-C00001.png)

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CN103871846B (zh) * 2012-12-18 2017-06-13 中芯国际集成电路制造(上海)有限公司 自对准多重图形化方法及硅基硬掩模组合物的应用
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Also Published As

Publication number Publication date
JP2008046408A (ja) 2008-02-28
DE102006058795A1 (de) 2008-02-28
JP4724073B2 (ja) 2011-07-13
KR20080016406A (ko) 2008-02-21
TW200811918A (en) 2008-03-01
CN101226335A (zh) 2008-07-23
DE102006058795B4 (de) 2012-12-20
US20120098103A1 (en) 2012-04-26
US8945816B2 (en) 2015-02-03
KR100845486B1 (ko) 2008-07-10
CN101226335B (zh) 2012-03-21
US8119325B2 (en) 2012-02-21
US20080044769A1 (en) 2008-02-21

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