TWI348189B - Substrate treatment apparatus and substrate treatment method - Google Patents

Substrate treatment apparatus and substrate treatment method

Info

Publication number
TWI348189B
TWI348189B TW096133189A TW96133189A TWI348189B TW I348189 B TWI348189 B TW I348189B TW 096133189 A TW096133189 A TW 096133189A TW 96133189 A TW96133189 A TW 96133189A TW I348189 B TWI348189 B TW I348189B
Authority
TW
Taiwan
Prior art keywords
substrate treatment
treatment apparatus
treatment method
substrate
treatment
Prior art date
Application number
TW096133189A
Other languages
English (en)
Other versions
TW200823990A (en
Inventor
Nagai Tatsuo
Morita Hiroshi
Takahashi Hiroaki
Uchida Hiroaki
Hayashi Toyohide
Original Assignee
Kurita Water Ind Ltd
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kurita Water Ind Ltd, Dainippon Screen Mfg filed Critical Kurita Water Ind Ltd
Publication of TW200823990A publication Critical patent/TW200823990A/zh
Application granted granted Critical
Publication of TWI348189B publication Critical patent/TWI348189B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
TW096133189A 2006-09-06 2007-09-06 Substrate treatment apparatus and substrate treatment method TWI348189B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006241798A JP4644170B2 (ja) 2006-09-06 2006-09-06 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
TW200823990A TW200823990A (en) 2008-06-01
TWI348189B true TWI348189B (en) 2011-09-01

Family

ID=39157274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096133189A TWI348189B (en) 2006-09-06 2007-09-06 Substrate treatment apparatus and substrate treatment method

Country Status (6)

Country Link
US (1) US8038799B2 (zh)
JP (1) JP4644170B2 (zh)
KR (1) KR101046804B1 (zh)
CN (1) CN101512725B (zh)
TW (1) TWI348189B (zh)
WO (1) WO2008029848A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006107550A2 (en) 2005-04-01 2006-10-12 Fsi International, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
US8387635B2 (en) 2006-07-07 2013-03-05 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP5024521B2 (ja) * 2006-10-11 2012-09-12 栗田工業株式会社 高温高濃度過硫酸溶液の生成方法および生成装置
JP5096849B2 (ja) * 2007-09-13 2012-12-12 株式会社Sokudo 基板処理装置および基板処理方法
KR20110005699A (ko) 2008-05-09 2011-01-18 에프에스아이 인터내쇼날 인크. 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
WO2009139826A2 (en) * 2008-05-12 2009-11-19 Fsi International, Inc. Substrate processing systems and related methods
JP5358303B2 (ja) * 2008-06-30 2013-12-04 クロリンエンジニアズ株式会社 電解硫酸による洗浄方法及び半導体装置の製造方法
JP5352213B2 (ja) * 2008-12-09 2013-11-27 芝浦メカトロニクス株式会社 レジスト剥離装置及び剥離方法
JP2012146690A (ja) * 2009-03-31 2012-08-02 Kurita Water Ind Ltd 電子材料洗浄方法及び電子材料洗浄装置
JP5148576B2 (ja) * 2009-09-25 2013-02-20 株式会社東芝 洗浄方法
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
JP5939373B2 (ja) * 2011-03-24 2016-06-22 栗田工業株式会社 電子材料洗浄方法および洗浄装置
JP5782317B2 (ja) * 2011-07-12 2015-09-24 株式会社Screenホールディングス 基板処理装置
US8940103B2 (en) * 2012-03-06 2015-01-27 Tokyo Electron Limited Sequential stage mixing for single substrate strip processing
JP6168271B2 (ja) 2012-08-08 2017-07-26 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP6121349B2 (ja) * 2014-02-28 2017-04-26 東京エレクトロン株式会社 希釈薬液供給装置、基板液処理装置及び流量制御方法
JP2016167568A (ja) * 2015-03-10 2016-09-15 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP6592316B2 (ja) * 2015-09-24 2019-10-16 エイブリック株式会社 半導体基板処理装置、フォトレジストを剥離する方法、および半導体装置の製造方法
US20170110345A1 (en) * 2015-10-14 2017-04-20 Tokyo Electron Limited Dispense nozzle with a shielding device
JP6698446B2 (ja) * 2016-07-05 2020-05-27 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
JP6942660B2 (ja) * 2018-03-09 2021-09-29 株式会社Screenホールディングス 基板処理装置及び基板処理方法
US11052432B2 (en) 2018-03-26 2021-07-06 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1059943A (en) * 1976-07-20 1979-08-07 Pierre L. Claessens Electrolytically forming peroxosulfuric acid to oxidize organic material in sulfuric acid
JPH05139707A (ja) * 1991-11-19 1993-06-08 Chlorine Eng Corp Ltd 硫酸の回収方法
JP3383334B2 (ja) * 1992-12-16 2003-03-04 クロリンエンジニアズ株式会社 硫酸の再生利用方法
JP2001192874A (ja) * 1999-12-28 2001-07-17 Permelec Electrode Ltd 過硫酸溶解水の製造方法
JP2004288858A (ja) 2003-03-20 2004-10-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2005032819A (ja) 2003-07-08 2005-02-03 Dainippon Screen Mfg Co Ltd レジスト剥離装置およびレジスト剥離方法
JP2005093926A (ja) 2003-09-19 2005-04-07 Trecenti Technologies Inc 基板処理装置および基板処理方法
JP2005109167A (ja) 2003-09-30 2005-04-21 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2005109166A (ja) 2003-09-30 2005-04-21 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2005268308A (ja) 2004-03-16 2005-09-29 Sony Corp レジスト剥離方法およびレジスト剥離装置
JP4462146B2 (ja) * 2004-09-17 2010-05-12 栗田工業株式会社 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置
JP4535822B2 (ja) * 2004-09-28 2010-09-01 ペルメレック電極株式会社 導電性ダイヤモンド電極及びその製造方法
JP4862981B2 (ja) * 2004-10-18 2012-01-25 栗田工業株式会社 硫酸リサイクル型洗浄システムおよびその運転方法
JP4407529B2 (ja) * 2005-02-16 2010-02-03 栗田工業株式会社 硫酸リサイクル型洗浄システム
JP4672487B2 (ja) * 2005-08-26 2011-04-20 大日本スクリーン製造株式会社 レジスト除去方法およびレジスト除去装置
JP4728826B2 (ja) * 2006-02-07 2011-07-20 株式会社東芝 半導体装置の製造方法およびエッチング液

Also Published As

Publication number Publication date
KR101046804B1 (ko) 2011-07-06
US20100175714A1 (en) 2010-07-15
US8038799B2 (en) 2011-10-18
CN101512725B (zh) 2012-09-05
JP2008066464A (ja) 2008-03-21
TW200823990A (en) 2008-06-01
JP4644170B2 (ja) 2011-03-02
KR20090048601A (ko) 2009-05-14
WO2008029848A1 (fr) 2008-03-13
CN101512725A (zh) 2009-08-19

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