TWI342049B - Method and apparatus for laser annealing - Google Patents

Method and apparatus for laser annealing Download PDF

Info

Publication number
TWI342049B
TWI342049B TW095133812A TW95133812A TWI342049B TW I342049 B TWI342049 B TW I342049B TW 095133812 A TW095133812 A TW 095133812A TW 95133812 A TW95133812 A TW 95133812A TW I342049 B TWI342049 B TW I342049B
Authority
TW
Taiwan
Prior art keywords
laser beam
rectangular
laser
substrate
semiconductor film
Prior art date
Application number
TW095133812A
Other languages
English (en)
Chinese (zh)
Other versions
TW200717661A (en
Inventor
Ryusuke Kawakami
Kenichiro Nishida
Norihito Kawaguchi
Miyuki Masaki
Atsushi Yoshinouchi
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200717661A publication Critical patent/TW200717661A/zh
Application granted granted Critical
Publication of TWI342049B publication Critical patent/TWI342049B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H10P14/3808—
    • H10P14/3812—
    • H10P14/382—
    • H10P34/42—

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
TW095133812A 2005-09-14 2006-09-13 Method and apparatus for laser annealing TWI342049B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005266607 2005-09-14
JP2006027096A JP2007110064A (ja) 2005-09-14 2006-02-03 レーザアニール方法及び装置

Publications (2)

Publication Number Publication Date
TW200717661A TW200717661A (en) 2007-05-01
TWI342049B true TWI342049B (en) 2011-05-11

Family

ID=37864915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133812A TWI342049B (en) 2005-09-14 2006-09-13 Method and apparatus for laser annealing

Country Status (7)

Country Link
US (5) US7833871B2 (enExample)
EP (1) EP1926131A4 (enExample)
JP (1) JP2007110064A (enExample)
KR (1) KR100967072B1 (enExample)
CN (1) CN101208778B (enExample)
TW (1) TWI342049B (enExample)
WO (1) WO2007032322A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888614B (zh) * 2020-08-31 2025-07-01 日商Ｊｓｗ阿克迪納系統股份有限公司 雷射退火裝置、雷射退火方法以及半導體裝置的製造方法

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110064A (ja) 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
US20070212859A1 (en) 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
JP5291895B2 (ja) * 2007-05-31 2013-09-18 株式会社半導体エネルギー研究所 レーザアニール装置及びレーザアニール方法
WO2009002877A1 (en) * 2007-06-22 2008-12-31 Lockheed Martin Corporation Apparatus and method for generating an rf signal
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP5376707B2 (ja) 2008-01-24 2013-12-25 株式会社半導体エネルギー研究所 レーザアニール装置
JP5467730B2 (ja) 2008-03-24 2014-04-09 株式会社半導体エネルギー研究所 レーザ照射装置
US9282307B2 (en) * 2010-04-13 2016-03-08 Synergy Sports Technology, Llc System and methods for searching and displaying ontology-based data structures
CN102081236A (zh) * 2011-01-27 2011-06-01 清华大学 激光退火设备中的光学处理装置
US8993372B2 (en) * 2011-03-01 2015-03-31 Infineon Technologies Austria Ag Method for producing a semiconductor component
GB2493698B (en) * 2011-08-08 2018-02-28 Univ Nottingham Trent Surface plasmon resonance in thin films
CN106653685B (zh) 2013-12-02 2020-06-09 株式会社半导体能源研究所 显示装置及其制造方法
JP2014123754A (ja) * 2014-01-28 2014-07-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN105448681B (zh) * 2014-07-04 2018-11-09 上海微电子装备（集团）股份有限公司 激光退火装置
CN104392914B (zh) * 2014-12-03 2018-04-17 苏州德龙激光股份有限公司 双波长激光退火装置及其方法
KR101700392B1 (ko) * 2015-05-26 2017-02-14 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
JP2017050302A (ja) * 2015-08-31 2017-03-09 特定非営利活動法人ナノフォトニクス工学推進機構 間接遷移型半導体発光素子
KR101735674B1 (ko) 2015-09-25 2017-05-15 주식회사 루세로텍 레이저 빔 단면의 에너지 변형을 포함하는 빔 모니터 장치
KR102483322B1 (ko) 2015-09-30 2022-12-30 삼성디스플레이 주식회사 편광 모듈 및 이를 포함하는 레이저 조사 장치
JP2016076721A (ja) * 2015-12-01 2016-05-12 株式会社半導体エネルギー研究所 レーザ照射装置
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
KR101866825B1 (ko) 2016-04-06 2018-07-16 주식회사 이솔 레이저 빔 에너지 프로파일 제어에 의한 촬상면 스케닝 방법
KR102340066B1 (ko) 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
US10003023B2 (en) 2016-04-15 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
JP6706155B2 (ja) * 2016-06-15 2020-06-03 株式会社日本製鋼所 多結晶半導体膜の製造方法、レーザアニール装置、薄膜トランジスタ、およびディスプレイ
KR20230106750A (ko) 2016-07-29 2023-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
TW201808628A (zh) 2016-08-09 2018-03-16 半導體能源研究所股份有限公司 半導體裝置的製造方法
CN106910683B (zh) * 2017-02-09 2020-01-14 武汉华星光电技术有限公司 一种激光退火的控制方法及装置
JP6391764B2 (ja) * 2017-05-25 2018-09-19 株式会社半導体エネルギー研究所 レーザ照射装置
KR102384289B1 (ko) * 2017-10-17 2022-04-08 삼성디스플레이 주식회사 레이저 결정화 장치
DE102018200036B3 (de) * 2018-01-03 2019-01-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Anordnung zur direkten Laserinterferenzstrukturierung
EP3514821B1 (en) * 2018-01-18 2020-05-27 Laser Systems & Solutions of Europe Method of laser irradiation of a patterned semiconductor device
KR102154609B1 (ko) 2018-11-06 2020-09-10 주식회사 이솔 레이저빔을 이용하여 가공대상물을 베이킹(baking) 가공 하는 레이저 시스템 및 이를 이용한 가공 방법
DE102019112141A1 (de) * 2019-05-09 2020-11-12 Innovavent Gmbh Verfahren und optisches System zur Bearbeitung eines Halbleitermaterials
KR102243189B1 (ko) 2020-10-12 2021-04-21 김윤호 진공 빔 프로파일링 장치
CN116774454A (zh) 2022-03-18 2023-09-19 株式会社半导体能源研究所 光学设备以及电子设备

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0299455A3 (en) 1987-07-17 1991-03-27 Dainippon Screen Mfg. Co., Ltd. Method and apparatus for laser exposure in an image scanning/recording apparatus
US5212710A (en) 1990-07-19 1993-05-18 Sony Corporation Laser light beam synthesizing apparatus
JPH04134420A (ja) 1990-09-27 1992-05-08 Sharp Corp 液晶表示装置の駆動方法
DE4127840A1 (de) * 1991-08-22 1993-02-25 Thomson Brandt Gmbh Optische abtastvorrichtung
US5224200A (en) * 1991-11-27 1993-06-29 The United States Of America As Represented By The Department Of Energy Coherence delay augmented laser beam homogenizer
WO1994029069A1 (fr) * 1993-06-04 1994-12-22 Seiko Epson Corporation Appareil et procede d'usinage au laser, et panneau a cristaux liquides
KR950034479A (ko) * 1994-05-24 1995-12-28 오노 시게오 조명광학계
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
US5970368A (en) * 1996-09-30 1999-10-19 Kabushiki Kaisha Toshiba Method for manufacturing polycrystal semiconductor film
US5852693A (en) * 1996-11-26 1998-12-22 Ultratech Stepper, Inc. Low-loss light redirection apparatus
JP4059952B2 (ja) * 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
US6246524B1 (en) * 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
US6081381A (en) * 1998-10-26 2000-06-27 Polametrics, Inc. Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source
JP3522654B2 (ja) 2000-06-09 2004-04-26 住友重機械工業株式会社 レーザ加工装置及び加工方法
US6347176B1 (en) * 2000-06-15 2002-02-12 Ultratech Stepper, Inc. Acousto-optical light tunnel apparatus and method
TW523791B (en) * 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
US6396616B1 (en) 2000-10-10 2002-05-28 3M Innovative Properties Company Direct laser imaging system
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US6955956B2 (en) 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
MY127193A (en) 2000-12-26 2006-11-30 Semiconductor Energy Lab Laser irradiation apparatus and method of laser irradiation
JP4837170B2 (ja) * 2001-01-12 2011-12-14 株式会社Ｉｈｉ レーザアニール方法及び装置
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
JP4875265B2 (ja) 2001-09-20 2012-02-15 文化シヤッター株式会社 エレベータ用防災装置
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
KR20040052468A (ko) * 2001-11-12 2004-06-23 소니 가부시끼 가이샤 레이저 어닐 장치 및 박막 트랜지스터의 제조 방법
KR20040063079A (ko) * 2001-12-07 2004-07-12 소니 가부시끼 가이샤 광 조사 장치 및 레이저 어닐 장치
US6977775B2 (en) * 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
JP4212830B2 (ja) * 2002-05-17 2009-01-21 シャープ株式会社 シリコン結晶化方法
JP2003347211A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4100962B2 (ja) * 2002-05-30 2008-06-11 三菱電機株式会社 半導体装置の製造方法
JP2003347207A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置
US7405114B2 (en) * 2002-10-16 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of manufacturing semiconductor device
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4408668B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法および製造装置
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
US7790533B2 (en) * 2004-06-18 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
CN101667538B (zh) * 2004-08-23 2012-10-10 株式会社半导体能源研究所 半导体器件及其制造方法
JP2007110064A (ja) * 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
DE112010003904T5 (de) * 2009-10-02 2013-03-07 Imra America, Inc. Optische Signalverarbeitung mit modengekoppelten Lasern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888614B (zh) * 2020-08-31 2025-07-01 日商Ｊｓｗ阿克迪納系統股份有限公司 雷射退火裝置、雷射退火方法以及半導體裝置的製造方法

Also Published As

Publication number Publication date
KR20080033174A (ko) 2008-04-16
KR100967072B1 (ko) 2010-07-01
TW200717661A (en) 2007-05-01
EP1926131A4 (en) 2011-08-03
US20140213071A1 (en) 2014-07-31
US7833871B2 (en) 2010-11-16
EP1926131A1 (en) 2008-05-28
JP2007110064A (ja) 2007-04-26
CN101208778B (zh) 2010-04-21
US9058994B2 (en) 2015-06-16
US20100022102A1 (en) 2010-01-28
US8629522B2 (en) 2014-01-14
CN101208778A (zh) 2008-06-25
US20130005123A1 (en) 2013-01-03
WO2007032322A1 (ja) 2007-03-22
US20110114855A1 (en) 2011-05-19
US20150348781A1 (en) 2015-12-03
US8299553B2 (en) 2012-10-30

Similar Documents

Publication Publication Date Title
TWI342049B (en) Method and apparatus for laser annealing
US6437284B1 (en) Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
US6717105B1 (en) Laser annealing optical system and laser annealing apparatus using the same
JP2003068644A (ja) シリコン結晶化方法とレーザアニール装置
US20130210242A1 (en) Laser annealing treatment apparatus and laser annealing treatment method
CN104956466A (zh) 用于低温多晶硅结晶的短脉冲光纤激光器
TW588128B (en) Method and apparatus for forming a semiconductor thin film
TW201208798A (en) Laser annealing apparatus and laser annealing method
US7864823B2 (en) Laser irradiation apparatus
TWI324679B (en) Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate
US7097709B2 (en) Laser annealing apparatus
JP2002141302A (ja) レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
KR101491043B1 (ko) 결정화방법 및 결정화장치
JP4410926B2 (ja) レーザアニーリング方法
JP7608363B2 (ja) 半導体材料を処理するための方法及び光学系
JP4024657B2 (ja) 結晶の周期性構造の形成方法及びその装置
TW200541078A (en) Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP2002158184A (ja) レーザ熱処理用のレーザ光学系
JP5147220B2 (ja) 多結晶半導体膜の作製方法
JP2003347210A (ja) 半導体装置およびその製造方法
JP3201381B2 (ja) 半導体薄膜の製造方法
JP2008300619A (ja) レーザアニール装置及びレーザアニール方法
JPS5952831A (ja) 光線アニ−ル方法
JP2003287705A (ja) レーザビーム均一照射光学系
JP2002174767A (ja) レーザ処理用のレーザ光学系

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees