TWI330876B - Method for forming multi-layer bumps on a substrate - Google Patents

Method for forming multi-layer bumps on a substrate Download PDF

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Publication number
TWI330876B
TWI330876B TW095140238A TW95140238A TWI330876B TW I330876 B TWI330876 B TW I330876B TW 095140238 A TW095140238 A TW 095140238A TW 95140238 A TW95140238 A TW 95140238A TW I330876 B TWI330876 B TW I330876B
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Taiwan
Prior art keywords
metal powder
bump
substrate
forming
mask
Prior art date
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TW095140238A
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English (en)
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TW200725768A (en
Inventor
Hei Ming Shiu
On Lok Chau
Gor Amie Lai
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Freescale Semiconductor Inc
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Publication of TW200725768A publication Critical patent/TW200725768A/zh
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Publication of TWI330876B publication Critical patent/TWI330876B/zh

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    • H05K2203/05—Patterning and lithography; Masks; Details of resist
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    • H05K2203/0557—Non-printed masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder

Description

1330876 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於在一半導體晶片或印刷電路板 (PCB)環境上形成凸塊之方法。更明確言之，本發明係關 於一種用於使用金屬粉末及區域化照射來形成用於倒裝晶 片接合法之多層連接器的方法。 【先前技術】 典型之倒裝晶片組件使用經由導電凸塊將面朝下之半導 鲁 體晶片連接至基材或電路板上之直接電連接。通常，倒裝 晶片組件係在三個階段十製得，亦即：在晶片上形成凸 塊’將具凸塊之晶片附接至板或基材上，及以非導電材料 填充在具凸塊之晶片之下的剩餘空間。 導電凸塊在倒裝晶片組件中具有數種功能，例如：在半 導體BB片與基材之間提供電連接及提供導熱路徑以將熱量 自半導體晶片傳導至基材。該凸塊亦將機械座架之部分提 φ 供至該基材且擔當用於防止半導體晶片與基材導體之間的 電接觸的間隔物。 已有多種在晶圓基材上形成凸塊之方法。一種形成凸塊 之方法包括在該晶圓基材上形成一具有與結合襯墊對齊之 開口的光阻層、藉由絲網印刷在該等開口中塗覆焊錫膏， 且然後溶融或回焊該焊錫膏以形成一凸塊。 — 及嗞寺開口可藉 由輕射及顯影該光阻而形成。 該方法之一問題為：需要一新的光阻層來處理各片曰圓 基材。另-問題為：需要由化學溶液來移除該光阻，:會 115775.doc 、匕于廢料。又一問題為：凸塊支起距離（凸塊高度）係 s光阻遮罩之厚度而定。為獲得較高之支起距離，需要 較厚之光阻層。 = 若而要低或精細間距（凸塊間隔），則該光阻層之 :可此厚度文限。在實踐中，光阻層中之開口通常具有 二隹形之形狀’亦即該等開口錐尖朝向結合襯塾處之窄 端因此，在尚支起距離與低間距之間需彼此折衷。 、另形成凸塊之方法包括圖案化一應用至一晶圓基材之 :阻層以形成凸塊位點，及於該等凸塊位點上電鍍一焊錫 D金。然後，移除該光阻層，之後回焊該焊錫合金以形成 球面。儘官該電鍍方法提供低間距，然一問題為需要濕 式化學品或電鍍槽溶液。此外’該等化學製程涉及危險材 料且必須小心控制。 慮及別述，將需要具有一種用於以低成本且不涉及濕式 化學品之方式形成凸塊的方法。此外，將需要具有一種提 供间支起距離（凸塊高度）及低或精細間距（凸塊間隔）之方 法0 【發明内容】 本發明提供一種用於在一基材上形成多層凸塊之方法， 其包含在該基材上沈積第一金屬粉末，且選擇性熔融或回 焊該第一金屬粉末之一部分以形成第一凸塊。然後，在該 等第一凸塊上沈積第二金屬粉末，且熔融該第二金屬粉末 以在該等第一凸塊上形成第二凸塊。在該基材上方安置— 遮罩板以選擇要熔融之該等金屬粉末之一部分，且經由— H5775.doc 1330876 m射光束來熔融該等金屬粉末。該多層凸塊無需任何濕式 化學品而形成。 【實施方式】 本發明提供一種用於在一半導體晶片或印刷電路板 (PCB)環境中之一基材上形成多&凸塊或連接器之方法。 在以下描述中，闡述眾多具體細節以提供對本發明之全面 瞭解。然而，應瞭解對熟習此項技術者而言，本發明可不 # 使用某些或所有該等具體細節而實施。在其他情況下，未 詳細描述熟知之製程操作以避免使本發明不必要地晦澀。 現參看圖1，其展示根據本發明之一實施例之半導體晶 片或晶圓或PCB基材104的放大橫截面圖。該基材1〇4包含 若干用於界定凸塊位點112之結合襯墊1〇8 ,凸塊可在該等 凸塊位點上形成。在形成凸塊之前，清潔基材1〇4以將諸 如氧化铭之污染物自結合襯墊1 〇8移除β 為完成該清潔，將一以一或多個孔12〇圖案化之遮罩板 • 丨16置放於基材104上方，以使孔120與凸塊位點丨對齊。 在遮罩板116上方提供一諸如紅外光束或雷射光束之區域 化照射光束124且將該光束於凸塊位點112處定向。光束 I24燒盡在襯墊108上之任何污染物。 孔120使照射光束通過凸塊位點112，同時遮罩板阻 擋光束照射基材1〇4其餘部分。遮罩板116可由金屬或陶瓷 材料製得，且可具有約500微米至約1毫米之厚度。孔120 可具有約40微米至約6〇微米之直徑，以緊密地匹配結合襯 墊108之大小。 115775.doc 1330876 現參看圖2，其展示具有一第一金屬粉末128之基材1〇4 的橫截面圖。在該基材104上方沈積第一金屬粉末128以在 凸塊位點112上方形成一大體上均勻之層。將一具有孔136 之遮罩板132安置於基材104上方’以使在遮罩板ι32上之 孔136與凸塊位點112對齊。遮罩板132可與如圖丨中所述之 用於調節照射光束124之遮罩板116相同。 第一金屬粉末128較佳包括銅或高鉛焊錫且具有約5微米 • 至約10微米之粒度。雖然可亦使用其他粒度，然應瞭解較 大之粒度可導致較大之凸塊大小及凸塊間距。通常（但不 限於）’選為該第一金屬粉末128之金屬粉末具有至少約攝 氏3 00度之稼點。 現參看圖3，其展示在第一金屬粉末128之第一照射期間 之基材104的橫截面圖。將一第一照射光束14〇發射穿過遮 罩板(>132或116)，該遮罩板使光束140在第一金屬粉末i28 之選定邛刀處定向穿過孔（丨“或12〇)。因此，第一金屬粉 • 末128之该選定部分經熔融或回焊以在結合襯墊108上形成 右干第-凸塊15〇。第一照射光束14〇可為適於加熱及溶融 該第金屬粉末之任何類型的光束，諸如紅外光束或雷射 “ 則’較佳為雷射光束，因為其易於聚焦。 現，看圖4，其展示具有一安置於在基材104及第一凸塊 150上方之笛 , ^ 弟二金屬粉末228之基材1〇4的橫截面圖。諸如 :喷灑在第-凸塊150上方沈積第二金屬粉末228，金屬 粉末228較佳星右勒铱 ”有較第一金屬粉末！ 28低之熔點。通常（但 不限於）’第二金屬私士 兔屬各末228之熔點可在約攝氏15〇度至約 115775.doc 1330876 攝氏200度之間的範圍内。 第一金屬粉末228可為具有約5微米至約1〇微米之粒度之 共晶焊錫（例如錫鉛），然而，應瞭解較大之粒度可導致較 大之凸塊大小及凸塊間距。將一遮罩板232安置於第二金 屬粉末228上方，以使在遮罩板232中之孔236與第一凸塊 150對齊，在該等第一凸塊150上將形成第二凸塊250。遮 罩板232可與如圖1中所述之遮罩板116或如圖2中所述之遮 罩板132或該兩者相同。 現參看圖5，其展示在第二金屬粉末228之第二照射期間 之基材104的橫截面圖。將一第二照射光束24〇發射穿過遮 罩板（232、132或116)，該遮罩板使光束24〇在第二金屬粉 末22S之選定部分處定向穿過孔（236、136或12〇)。因此， 第一金屬粉末228之該選定部分經熔融或回焊以在第一凸 塊150上形成若干第二凸塊25〇。因為第二金屬粉末228具 有較第一金屬粉末128低之熔點，所以當第二金屬粉末228 經熔融或回焊以形成第二組凸塊25〇時，第一凸塊15〇並不 熔融。 第一照射光束240可為紅外光束或雷射光束，其加熱第 一金屬粉末228至該粉末充分嫁融以與第一凸塊15〇黏結之 階段。然後，冷卻第二凸塊250且使其固化。最後，藉由 (例如）鼓風或旋轉來移除第一金屬粉末128a與第二金屬粉 末228a之未熔融部分。 在本發明之另一實施例中，可在提供於結合襯墊1〇8上 之襯墊冶金上形成凸塊。襯墊冶金（亦稱為凸塊底層金屬 115775.doc -10- 1330876 化（UBM))保護基材104且在凸塊與外部基材（諸如印刷電路 板（PCB))之間提供電連接及機械連接^ UBM通常包括由熟 習此項技術者已知方法在結合襯墊108上形成之連續金屬 層。 在另一實施例中，上述用於熔融或回焊金屬粉末（128、 228)及用於清潔凸塊位點112之照射光束可用程式化之單 個雷射光束替代。使用該程式化之單個雷射光束，可將用 於熔融金屬粉末（128、228)之熱量更精確地於該等凸塊位 點112定向。因此，可將用於形成凸塊（15〇、25〇)之金屬粉 末（128、228)之部分選擇性熔融而無需一調節熱暴露之遮 罩板。 現參看圖0 ’其展示根據本發明之一實施例之在基材1〇4 之結合襯墊108上形成之若干雙層金屬凸塊35〇的橫截面 圖。各雙層凸塊350包含一耦接至該結合襯墊1〇8之第一凸 塊150及一在該第一凸塊150上形成且耦接至該第一凸塊 1 50之第二凸塊250。例如，在倒裝晶片組件中，該等雙層 凸塊350提供用於將半導體基材1〇4電連接至在電子封裝中 之外部基材的連接器。通常，第一凸塊15〇提供支起距 離，而第二凸塊250提供焊接點形成。 儘#涉及在基板104上形成凸塊來描述以上製程，然本 發明可應用於在PCB基材上形成互連或凸塊。以上製程亦 可應用於形成具有多於兩層凸塊之連接器。舉例而言，可 藉由在該第二凸塊250上方沈積第三金屬&末且選擇性溶 融或回焊該第三金屬粉末之_部分來形成該連接器之第三 115775.doc 1330876 凸塊》 本發明特別有利於降低處理成本，因為本發明僅需要最 小置之加工，不涉及濕式化學製程且利用可再度使用之遮 罩板。若將可程式化之單個雷射光束用於選擇性熔融金屬 粉末’則可不使用該遮罩板。 本發明之另一優點為高支起距離，較之單層凸塊，其可 由雙層或多層凸塊達成。在高溫下，石夕晶圓及凸塊經受由
矽曰曰圓與諸如PCB之外部表面中之不同膨脹速率引起的熱 機械應力。該等不肖之膨脹速率係由於$同材料中熱膨服 係數（CTE)不匹配而引起。過大之應力可導致♦破裂或凸 塊破裂。高支起距離釋放由CTE不匹配引起之應力且藉此 改良凸塊接合可靠性。 本發明之另-優點為降低之凸塊大小及凸塊間距。藉由 在第&塊150上形成第二凸塊25〇，在不增加凸塊大小或 直徑之情況下達成高支起距離。視所使用之金屬粉末粒度 及遮罩板之孔的解析度而^ ’此方式接著允許在約5〇微米 至’勺75微米範圍内之較低或較精細之凸塊間距。在使用可 式化雷射光束之實施例中，凸塊大小及間距視該雷射光 束之解析度而定。 考慮本發月之說明書及實施’本發明之其他實施例對對 熟習此項技術者而言顯而易I。此外，出於清晰描述之目 的使用特㈣語，且其不限制本發明。應將上述實施例及 較佳特徵視為例示性的，而本發明由附隨中請專利範圍界 115775.doc 12- 1330876 【圖式簡單說明】 圖1說明根據本發明之一實施例之半導體晶圓的放大橫 截面圖。 圖2說明根據本發明之一實施例之具有第一金屬粉末之 圖1之半導體晶圓的放大橫截面圖。 圖3說明根據本發明之一實施例之在對第一金屬粉末進 行第一照射期間之圖2之半導體晶圓的放大橫截面圖。 圖4說明根據本發明之一實施例之在第一凸塊上方具有 第二金屬粉末之圖3之半導體晶圓的放大橫截面圖。 圖5說明根據本發明之一實施例之在對第二金屬粉末進 行第二照射期間之圖4之半導體晶圓的放大橫截面圖。 圖6為根據本發明之一實施例之在半導體晶圓之結合襯 塾上形成之若干雙層金屬凸塊的放大橫截面圖。 【主要元件符號說明】 104 基材 108 結合襯墊 112 凸塊位點 116 遮罩板 120 孔 124 光束 128 第一金屬粉末 132 遮罩板 136 孔 140 第一照射光束 115775.doc -13- 1330876 150 第一凸塊 228 第二金屬粉末 232 遮罩板 236 子L 240 第二照射光束 250 第二凸塊 350 雙層凸塊 115775.doc 14·

Claims (1)

1330876 A :月⑲ 第065140238號專利申請案 中文申請專利範圍替換本(99年3月） 十、申請專利範圍： 1. 一種用於在一基材上形成一雙層凸塊之方法其包括·· 在該基材上沈積第一金屬粉末； 熔融該第一金屬粉末以形成第一凸塊； 在至少該第一凸塊上方沈積第二金屬粉末；及 溶融該第二金屬粉末以在該第一凸塊上形成第二凸 塊，其中該第一凸塊與該第二凸塊形成該雙層凸塊。 如請求们之用於形成一雙層凸塊之方法，其中炫融該 第一金屬粉末進一步包括： 在該基材置放第-遮罩板，該第_遮罩板且有至 少一孔；及 藉由穿過該至少-孔照射該第一金屬粉末之一選定部 分來熔融該選定部分。 3.如請求項2之用於形成一雙層凸堍 又層凸塊之方法，其中熔融該 弟二金屬粉末進一步包括： 在該基材上方置放第二遮罩板，該第二遮罩板具有至 少一孔；及 藉由穿過該第二遮罩板之該孔照射該第二金屬粉末之 一選定部分來炼融該選定部分。 4·如請求項3之用於形成—雙層凸塊之方法，其中該第二 金屬粉末之熔點低於該第一金屬粉末之熔點。 5.如請求们之用於形成一雙層凸塊之方法，#中該第一 金屬粉末及該第二金屬粉太久古 蜀杨禾各具有在約5微米至約1〇微 米之間的粒度。 115775-990315.doc 6, 如請求項5之用於形成一雙僧〜乃凌，其中該 金屬粉末包括銅及高鉛焊錫中之一者， 太白扛 玄弟二金屬粉 末匕括一共晶焊錫。
月求項1之用於形成一雙層凸塊之方法，其壤 括在沈積該第二金屬粉末之前清潔該基 ^ ^ 埶。 珂上之〜結合襯 8·如請求項7之用於形成一雙層凸塊之方法盆 /、§亥清潔 '驟包括照射該結合襯墊以燒盡在其上之任何污染物 哨求項1之用於形成一雙層凸塊之方法，苴 一 金屬粉末進一步包括以一可程式化之單個雷射光束 來照射該第一金屬粉末之一部分。 10·如請求項！之用於形成一雙層凸塊之方法，其進一步包 括移除在該基材上剩餘之該第一金屬粉末及該第二金屬 粉末之任何未熔融部分。 U· —種用於在一基材上形成多層連接器之方法其包括： 在該基材上沈積第一金屬粉末； 照射該第一金屬粉末之一選定部分以形成第—凸塊； 在該第一凸塊上方沈積第二金屬粉末；及 照射該第二金屬粉末以在該第一凸塊上形成第二凸 塊，其中該第一凸塊與該第二凸塊形成該多層連接器。 12. 如請求項11之形成多層連接器之方法，其中以穿過安置 於》亥基材上方之遮罩板之一孔定向之照射光束來照射該 第一金屬粉末及該第二金屬粉末。 13. 如凊求項〗！之形成多層連接器之方法其中該第二金屬 115775-990315.doc
1330876 粉末之熔點低於該第一金屬粉末之熔點。 14.如請求項11之形成多層連接器之方法，其中該第一金屬 粉末及該第二金屬粉末各具有在約5微米至約1 0微米之 間的粒度。
115775-990315.doc
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