JP5079304B2 - 基板上に多層バンプを形成する方法 - Google Patents
基板上に多層バンプを形成する方法 Download PDFInfo
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- JP5079304B2 JP5079304B2 JP2006294279A JP2006294279A JP5079304B2 JP 5079304 B2 JP5079304 B2 JP 5079304B2 JP 2006294279 A JP2006294279 A JP 2006294279A JP 2006294279 A JP2006294279 A JP 2006294279A JP 5079304 B2 JP5079304 B2 JP 5079304B2
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- Prior art keywords
- metal powder
- bump
- forming
- substrate
- masking plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 title claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 69
- 239000000843 powder Substances 0.000 claims description 65
- 230000000873 masking effect Effects 0.000 claims description 33
- 230000008018 melting Effects 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 230000003760 hair shine Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000011295 pitch Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10992—Using different connection materials, e.g. different solders, for the same connection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0557—Non-printed masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Description
以下の説明では、本発明を完全に理解するために多くの詳細な説明が記載されている。しかしながら、当業者にとって、これらの詳細な説明の一部又は全てが不足していたとしても、本発明を実行できることは明らかである。他の例では、本発明を不必要に曖昧にしないため、周知のプロセス手順を詳細に説明しなかった。
Claims (13)
- 基板上に二重層バンプを形成する方法であって、
前記基板上に第一金属粉末を蒸着するステップと、
前記基板上に第一マスキングプレートを配置するステップであって、前記第一マスキングプレートは少なくとも一つの開口を備えているステップと、
前記第一マスキングプレートの開口を通過して導かれた光線を照射して前記第一金属粉末を溶融し、第一バンプを形成するステップと、
少なくとも前記第一バンプ上に第二金属粉末を蒸着するステップと、
前記基板上に第二マスキングプレートを配置するステップであって、前記第二マスキングプレートは少なくとも一つの開口を備えているステップと、
前記第二マスキングプレートの開口を通過して導かれた光線を照射して前記第二金属粉末を溶融し、前記第一バンプ上に第二バンプを形成するステップであって、前記第一バンプ及び前記第二バンプが二重層バンプを形成し、前記二重層バンプの周囲が、前記第一金属粉末及び第二金属粉末の残存する部分により包囲されている方法。 - 請求項1記載の二重層バンプを形成する方法において、
前記第一金属粉末を溶融するステップは、
前記第一金属粉末の選択された部分に光線を照射することにより、その選択された部分を溶融するステップを備える方法。 - 請求項2記載の二重層バンプを形成する方法において、
前記第二金属粉末を溶融するステップは、
前記第二金属粉末の選択された部分に光線を照射することにより、その選択された部分を溶融するステップを備える方法。 - 請求項1記載の二重層バンプを形成する方法において、
前記第二金属粉末の融点は、前記第一金属粉末の融点よりも低い方法。 - 請求項1記載の二重層バンプを形成する方法において、
前記第一金属粉末及び前記第二金属粉末は、5μm〜10μmの粒子径を有している方法。 - 請求項5記載の二重層バンプを形成する方法において、
前記第一金属粉末は銅又は高融点鉛はんだを含み、前記第二金属粉末は共晶はんだを含む方法。 - 請求項1記載の二重層バンプを形成する方法は、更に、
前記第一金属粉末を蒸着する前に前記基板上のボンドパッドを洗浄するステップを備える方法。 - 請求項7記載の二重層バンプを形成する方法において、
前記洗浄するステップは、前記ボンドパッドに光線を照射して、同ボンドパッド上の不純物を焼き尽くすステップを備える方法。 - 請求項1記載の二重層バンプを形成する方法において、
前記第一金属粉末を溶融するステップは、更に、プログラム可能な単一のレーザ光線により前記第一金属粉末の一部に光線を照射するステップを備える方法。 - 請求項1記載の二重層バンプを形成する方法は、更に、
前記基板上に残存する前記第一及び第二金属粉末の非溶融部分を除去するステップを備える方法。 - 基板上に多層コネクタを形成する方法であって、
前記基板上に第一金属粉末を蒸着するステップと、
前記基板上に第一マスキングプレートを配置するステップであって、前記第一マスキングプレートは少なくとも一つの開口を備えているステップと、
前記第一マスキングプレートの開口を通過して導かれた光線を前記第一金属粉末の選択された部分に照射して、第一バンプを形成するステップと、
前記第一バンプ上に第二金属粉末を蒸着するステップと、
前記基板上に第二マスキングプレートを配置するステップであって、前記第二マスキングプレートは少なくとも一つの開口を備えているステップと、
前記第二マスキングプレートの開口を通過して導かれた光線を前記第二金属粉末に照射して、前記第一バンプ上に第二バンプを形成するステップであって、前記第一バンプ及び前記第二バンプが多層コネクタを形成し、前記多層コネクタの周囲が、前記第一金属粉末及び第二金属粉末の残存する部分により包囲されている方法。 - 請求項11記載の多層コネクタを形成する方法において、
前記第二金属粉末の融点は、前記第一金属粉末の融点よりも低い方法。 - 請求項11記載の多層コネクタを形成する方法において、
前記第一金属粉末及び前記第二金属粉末は、5μm〜10μmの粒子径を有している方法。
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US11/263,440 US7279409B2 (en) | 2005-10-31 | 2005-10-31 | Method for forming multi-layer bumps on a substrate |
US11/263,440 | 2005-10-31 |
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JP2007129220A JP2007129220A (ja) | 2007-05-24 |
JP5079304B2 true JP5079304B2 (ja) | 2012-11-21 |
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US (1) | US7279409B2 (ja) |
JP (1) | JP5079304B2 (ja) |
KR (1) | KR101279234B1 (ja) |
CN (1) | CN1959531A (ja) |
DE (1) | DE102006051151A1 (ja) |
SG (1) | SG131913A1 (ja) |
TW (1) | TWI330876B (ja) |
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KR101639786B1 (ko) | 2009-01-14 | 2016-07-15 | 코닌클리케 필립스 엔.브이. | 기판 상에 적어도 하나의 전기 전도성 막을 퇴적하는 방법 |
JP5316261B2 (ja) * | 2009-06-30 | 2013-10-16 | 富士通株式会社 | マルチチップモジュールおよびプリント基板ユニット並びに電子機器 |
TW201133745A (en) * | 2009-08-27 | 2011-10-01 | Advanpack Solutions Private Ltd | Stacked bump interconnection structure and semiconductor package formed using the same |
JP5397243B2 (ja) * | 2010-01-28 | 2014-01-22 | 日立化成株式会社 | 半導体装置の製造方法及び回路部材接続用接着シート |
US9636782B2 (en) | 2012-11-28 | 2017-05-02 | International Business Machines Corporation | Wafer debonding using mid-wavelength infrared radiation ablation |
US20140144593A1 (en) | 2012-11-28 | 2014-05-29 | International Business Machiness Corporation | Wafer debonding using long-wavelength infrared radiation ablation |
TWI576190B (zh) * | 2013-08-01 | 2017-04-01 | Ibm | 使用中段波長紅外光輻射燒蝕之晶圓剝離 |
DE102013220886A1 (de) * | 2013-10-15 | 2015-04-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Erzeugen einer metallischen Kontaktierungsstruktur auf einem Halbleitersubstrat |
US9474162B2 (en) | 2014-01-10 | 2016-10-18 | Freescale Semiocnductor, Inc. | Circuit substrate and method of manufacturing same |
CN105632910B (zh) * | 2015-03-31 | 2021-04-30 | 中国科学院微电子研究所 | 栅导体层及其制造方法 |
CN108807202B (zh) * | 2018-06-11 | 2019-11-12 | 广东海洋大学 | 一种激光制作钎料凸点的方法 |
CN112599642A (zh) * | 2020-12-18 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种电池片的焊接方法以及光伏组件 |
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JPH05110241A (ja) * | 1991-10-18 | 1993-04-30 | Mitsubishi Electric Corp | プリント基板への半田供給方法 |
JP3193100B2 (ja) * | 1992-03-13 | 2001-07-30 | 富士通株式会社 | 半導体装置 |
JP2586811B2 (ja) | 1993-11-29 | 1997-03-05 | 日本電気株式会社 | はんだバンプ形成方法 |
US5470787A (en) | 1994-05-02 | 1995-11-28 | Motorola, Inc. | Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same |
JPH07321444A (ja) * | 1994-05-24 | 1995-12-08 | Fujitsu Ltd | 金属パターン形成方法 |
US5539153A (en) | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
JPH08204322A (ja) * | 1995-01-26 | 1996-08-09 | Ibiden Co Ltd | バンプの形成方法 |
JPH11145176A (ja) * | 1997-11-11 | 1999-05-28 | Fujitsu Ltd | ハンダバンプの形成方法及び予備ハンダの形成方法 |
JP2000228576A (ja) * | 1999-02-08 | 2000-08-15 | Ricoh Co Ltd | バンプを具備する回路基板とその製造方法 |
JP2000252313A (ja) * | 1999-02-25 | 2000-09-14 | Sony Corp | メッキ被膜の形成方法および半導体装置の製造方法 |
JP2002026056A (ja) | 2000-07-12 | 2002-01-25 | Sony Corp | 半田バンプの形成方法及び半導体装置の製造方法 |
JP2002076043A (ja) | 2000-08-28 | 2002-03-15 | Mitsubishi Electric Corp | バンプ形成方法、半導体装置、およびバンプ形成装置 |
JP2005235856A (ja) * | 2004-02-17 | 2005-09-02 | Matsushita Electric Ind Co Ltd | フリップチップ実装方法及びその装置 |
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- 2006-10-27 SG SG200607481-9A patent/SG131913A1/en unknown
- 2006-10-30 DE DE102006051151A patent/DE102006051151A1/de not_active Withdrawn
- 2006-10-30 JP JP2006294279A patent/JP5079304B2/ja not_active Expired - Fee Related
- 2006-10-31 KR KR1020060106196A patent/KR101279234B1/ko active IP Right Grant
- 2006-10-31 TW TW095140238A patent/TWI330876B/zh not_active IP Right Cessation
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TWI330876B (en) | 2010-09-21 |
US20070099413A1 (en) | 2007-05-03 |
JP2007129220A (ja) | 2007-05-24 |
SG131913A1 (en) | 2007-05-28 |
TW200725768A (en) | 2007-07-01 |
DE102006051151A1 (de) | 2007-06-06 |
US7279409B2 (en) | 2007-10-09 |
CN1959531A (zh) | 2007-05-09 |
KR101279234B1 (ko) | 2013-06-26 |
KR20070046756A (ko) | 2007-05-03 |
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