TWI326120B - Isolated phase change memory cell and method for fabricating the same - Google Patents
Isolated phase change memory cell and method for fabricating the same Download PDFInfo
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- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/801—Constructional details of multistable switching devices
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- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Description
1326120 九、發明說明: 【相關申請案資料】 本案於2005年11月15曰申請美國暫時性專利申請, 該申請案之申請案號為60/736.721 ,發明名稱為「隔離之 相轉換記憶體以及其製造方法。 【聯合研究合約之當事人】 國際商業機械公司紐約公司、旺宏國際股份有限公司台 灣公司及英飛凌技術公司(Infineon Technologies A.G.)德國 公司係為聯合研究合約之當事人。 【發明所屬之技術領域】 本發明係關於高密度記憶裝置其係奠基於以相轉換為 基礎之記憶材料,包括以硫屬化物(chalcogenide)為基礎之 材料以及其他材料,及製造此等裝置之方法,並特別地有 關於一相轉換記憶元件其包括有較低電流以及更佳的熱控 制特徵。 【先前技術】 以相轉換為基礎之記憶材料係被廣泛地運用於非揮發 性隨機存取記憶體中。如硫屬化物及類似材料之此等材 料,可藉由施加其幅度適用於積體電路中之電流,而致使 晶相在非晶態(amorphous)與結晶態(crystalline)之間轉換。
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5 1326120 一般而言非晶態之特徵係其電阻高於結晶態,此電阻值可 輕易測量得到而用以作為指示。 • 從非晶態轉變至結晶態一般係為一低電流步驟。從結晶 .態轉變至非晶態(以下指稱為重置(reset))—般係為一高電 流步驟,其包括一短暫的高電流密度脈衝以融化或破壞結 晶結構,其後此相轉換材料會快速冷卻,抑制相轉換的過 程,使得至少部份相轉換結構得以維持在非晶態。理想狀 態下’致使相轉換材料從結晶態轉變至非晶態之重置電流 • 幅度應越低越好。欲降低重置所需的重置電流幅度,可藉 由減低在記憶體中的相轉換材料元件的尺寸、以及減少電 極與此相轉換材料之接觸面積而達成,因此可針對此相轉 • 換材料元件施加較小的絕對電流值而達成較高的電流密 ' 度。 此領域發展的一種方法係致力於在一積體電路結構上 形成微小孔洞,並使用微量可程式化之電阻材料填充這些 微小孔洞。致力於此等微小孔洞的專利包括:於1997年 φ 11月U日公告之美國專利第5,687,112號,,Multibit Single
Cell Memory Element Having Tapered Contact”、發明人為 Ovshinky;於1998年8月4日公告之美國專利第5,789,277 號”Method of Making Chalogenide [sic] Memory Device”、 發明人為Zahorik等;以及於2000年11月21日公告之美 國專利第 6,150,253 號’’Controllable Ovonic Phase-Change Semiconductor Memory Device and Methods of Fabricating the Same”、發明人為Doan等。 在先前技藝中所遭遇到的一個特殊問題在於如何控制 6 1326120 繼續進 操作電流、以及伴隨此電流而生的熱量。此相轉換過 k著此相轉換材料受到焦耳熱(jouie heating )而° 會 展’並隨之產生兩個問題。第一是以一包括有數 y
之單獨記憶胞(在gigabyte範圍作為提供儲存電容之單‘"&Τ 然需要這麼多)之記憶單元,來控制所需電流。第-顯 〜則是由 此極大數量記憶胞所產生之熱量,即使不會破壞所有的4 憶單元,至少亦會使一個記憶單元劣化。 ° 因此,理想地係可以提供一種記憶胞結構其帶有較低的 熱量特性以及低重置電流,以及一種製造方法其可配合大 量製造記憶裝置時所需要的嚴格製程變數規格。此外,理 想地亦可提供一種製造程序以及一種結構,其可適用於在 同一積體電路上製造周邊電路。 【發明内容】 本發明之一面向係為一記憶裝置其帶有改良的熱傳導 特徵。此裝置首先包括一介電材料層;第一及第二電極, 其係彼此垂直分離旅包括有相向之接觸表面。一相轉換記 憶元件(phase-change memory element)係包覆於此介電材 料層中,包括一相轉換層其係位於此些電極間龙與之形成 電接觸,其中此相轉換層之橫向面積係少於此電極之橫向 面積。一隔離材料係位於此相轉換層與此介電層之間’其 中此隔離材料之熱傳導性係低於此介電材料之熱傳導性。 此隔離層係將此相轉換層之材料隔離於蝕刻製程之外’而 此蝕刻製程可能損傷此材料或造成此材料下方的過度削 切。在本文所述之實例中,此隔離材料同時改良了此相轉 1326120 換材料之熱隔離性。 【實施方式】 以下係詳細說明本發明之結構與方法。本發明内容說明 章節目的並非在於疋義本發明。本發明係由申請專利範圍 所定義。舉凡本發明之實施例、特徵、觀點及優點等將可 透過下列說明申請專利範圍及所附圖式獲得充分暸解。 關於本文中所提及之方向性描述,圖示中的方向係相對 於參考框,而對應至相關圖示中並描述以「上」、「下」、 「左」、及「右」。相似地’「厚度」一詞係指稱一垂直尺度、 而「寬度」則指稱一水平尺度。如此領域中具有通常知識 者所知’這些方向性對於電路本身的方向並無實際操作上 的對應° 以下係描述本發明之相轉換元件以及記憶胞,其後則討 論製造上述二者之程序。
圖1係描繪根據本發明一實施例之相轉換記憶元件 10。如圖中所示,此相轉換元件於二電極中延伸,包括一 栓塞電極i4(piug electrode),以及一上電極、或稱位元 以選擇-特定資;^矩形排列。字元、線⑽rd line)係被充 選擇-特定位A'。f70位址,同時位7°線在該資料字元 於本發明之部分這些線路傳統上麵局為垂直陣列。 位元線30係形成此記憶胞可被解讀為,此電路佈局中 向延伸整個圖示。^相轉換元件之上層,且圖中可見其係 予元線16則係正交至此元件。此字元 1326120 • 訊號係將栓塞電極14連接至一用以讀寫之電流路徑。此於 塞電極、位元線、以及字元線之導電材料可為鎢、鋼、鋁= • 或其他材料、以及一般在此領域中被認為適用於拴塞電極 以及線結構之複合物。 ¥ 在此栓塞元件的上端形成有電極導電層18以及下導電 層20。設置此二層的目的將在以下解釋。這些層需要三個 特徵:第一,如下所述之與相轉換材料間的優秀附著力; 第二,優良的導電性;以及第三,擴散屏障特徵,尤其是 _ 在防止相轉換材料擴散入電極金屬的方面。這些層較佳係 由氮化鈦(TiN)或氮化鈕(TaN)所構成。或者,此導電 層可為氮化鋁鈦(TiAIN)或氮化鋁鈕(TaAlN)、或可包 ' 括(僅作為額外舉例)一個以上選自下列群組之元素:鈦 (Ti)、鎢(W)、鉬(Mo)、鋁(A1)、组(Ta)、銅(Cu)、鉑(Pt)、 銥(Ir)、鑭(La)、鎳(Ni)、以及釕(Ru)、以及上述之複合物。 此導電層較佳係延伸經過此栓塞元件之寬度。 在這些導電層18,20之上,係為一相轉換材料薄膜22, 癱 其較佳係由一硫屬化物(chalcogenide)所構成。护屬物 包括下列四元素之任一者:氧(〇)、硫(s)、栖\Se)、 以及碲(Te)’形成元素週期表上第VI^的部分。硫屬化 物包括將一硫屬元素與一更為正電性之元素或自由^結合 而得。硫屬化合物合金包括將硫屬化合物與其他物質:二 渡金屬等結合。一硫屬化合物合金同常包括一個以上選自 元素週期表第六攔的元素,例如錄(Ge)以及錫(如)。 通常,硫屬化合物合金包括下列元素中一個以上的複人 物:銻(Sb)、鎵(Ga)、銦(In)、以及銀(Ag)。許多以 1326120 相轉換為基礎之記憶材料已經被描述於技術文件中勺 下列合金:鎵/銻、銦/銻、銦/硒、銻/碲、鍺/碲、鍺/銻^、 .銦/録/碲、鎵/站/蹄、錫/錄/碎、銦/銻/鍺 '銀/銦/錦/蹄、 • /錫/錄/碎、鍺/録/硝/碎、以及蹄/鍺/録/硫。在鍺/錄/碲人金 家族中,可以嘗試大範圍的合金成分。此成分可以下二特 徵式表示:TeaGebSbuK^+w。一位研究員描述了最有用的合 金係為,在沈積材料中所包含之平均碲濃度係遠低於 70%,典型地係低於60%,並在一般型態合金中的碲含量 鲁 範圍從最低23%至最向58%,且最佳係介於48%至58%之 碲含量。鍺的濃度係遠高於5%,且其在材料中的平均範圍 係從最低8%至最高30%,一般係低於50%。最佳地,鍺的 濃度範圍係介於8%至40%。在此成分中所剩下的主要成分 則為銻。上述百分比係為原子百分比,其為所有組成元素 加總為100%。( Ovshinky ‘112專利,攔10〜11 )由另一研 究者所評估的特殊合金包括Ge2Sb2Te5、GeSb2Te4、以及
GeSb4Te7。( Noboru Yamada,’’Potential of Ge-Sb-Te • Phase-change Optical Disks for High-Data-Rate Recording”, v.3709,pp. 28-37(1997))更一般地,過渡金屬如鉻 (Cr)、鐵(Fe)、鎳(Ni)、鈮(Nb)、鈀(Pd)、鉑(Pt)、以及上述 之混合物或合金,可與錯/録/碲結合以形成一相轉換合金其 包括有可程式化的電阻性質。可使用的記憶材料的特殊範 例’係如Ovshinsky ‘ 112專利中欄11 -13所述,其範例在 此係列入參考。 在此記憶胞之活性通道區域中,相轉換合金係可在一第 一結構態與一第二結構態之間以其局部次序切換,其中第 1326120 一結構悲一般係為非晶固態(amorphous solid phase),而第 一結構態一般係為一結晶固態(crystalline solid phase)。此 ’ °弓莱「非晶」係用以指稱一相對較無次序之結構,其較之 • 一單晶更無次序性’而帶有可偵測之特徵如較之結晶態更 向之電阻值。此詞彙「結晶態」係用以指稱一相對較有次 序之結構’其較之非晶態更有次序,因此包括有可偵測的 特徵例如比非晶態更低的電阻值。典型地,相轉換材料可 電切換至完全結晶態與完全非晶態之間所有可偵測的不同 鲁狀態。其他受到非晶態與結晶態之改變而影響之材料特中 包括,原子次序、自由電子密度、以及活化能。此材料可 切換成為不同的固態、或可切換成為由兩種以上固態所形 成之混合物,提供從非晶態至結晶態之間的灰階部分。此 ' 材料中的電性質亦可能隨之改變。 相轉換合金可藉由施加一電脈衝而從一種相態切換至 另一相.4。先前觀察指出,一較短、較大幅度的脈衝傾向 於將相轉換材料的相態改變成大體為非晶態。一較長、較 • 低幅度的脈衝傾向於將相轉換材料的相態改變成大體為結 晶態。在較短、較大幅度脈衝中的能量,夠大因此足以: 壞結晶結構的鍵結,同時夠短因此可以防止原子再次排列 成結晶態。纟沒有不適當實驗的情形下,彳決定特別適用 於一特定相轉換合金的適當脈衝量變曲線。在本文的後浐 部分,此相轉換材料係以GST代稱,同時吾人亦需, 亦可使用其他類型之相轉換材料。在本文中所描述之 適用於PCRAM中之材料,係為Ge2Sb2Te5。 可用於本發明其他實施例中之其他可程式化之記憶材 11 1326120 • 料包括,摻雜%之GST、GexSby、或其他以不同結晶態轉 換來決定電阻之物質;PrxCayMn〇3、PrSrMnO、ZrOx、或 . 其他使用一電脈衝以改變電阻狀態之物質;TCNQ、 PCBM、TCNQ-PCBM、Cu-TCN、Ag-TCNQ、C60-TCNQ、 以其他物質摻雜之TCNQ、或任何其他聚合物材料其包括 有以一電脈衝而控制之雙穩定或多穩定電阻態。 如第1圖所示之實施例中的相轉換層22係為一薄膜, 較佳地其厚度係介於約l〇nm至約1〇〇 nm,最佳地係為約 _ 40 nm。 在此相轉換層22之上’設有一第二導電層24,至少覆 蓋此相轉換層之上表面。此—導電層亦可由氮化鈦所構 成,如前所述。為了敘述上的方便性,可將此相轉換層22 與第二導電層24二者,於此以下共稱為相轉換核心25。 在本發明之一實施例中,此相轉換核心並不完全延伸橫 越此導電材料之表面,而是將此相轉換材料與導電層以一 隔離材料26包覆或環繞。在較佳實施例中,此隔離材料與 鲁戶斤被環繞之介電填充物12相較之下具備有一較低導熱性。 由如前所述之氮化鈦或類似材料所構成之一上導電層 28,係設置於此第二導電層/隔離組之上。本發明之一實施 例係建構了此栓塞以及後續的叠置層,成為一柱狀结構。 如下所述,此種設計使高效率製造成為可能。位元線3〇係 位於此上導電層28之上並與之形成電接觸,且係由一如上 所述之適當金屬所構成。 介電填充物質12係環繞並包覆整個相轉換記憶元件。 此物質較佳地,係由石夕氧化物或替代物如氮氧切、經摻 12 1326120 .㈣ '聚亞《、錢化物、或其他介電填充材 料一層以上所構成。 • 纟操作上’—電流路徑係存在於栓塞14與位元線30之 .間纟f施例中,電流係由位元線流經此相轉換元件、 而流出經過此栓塞元件,然而此方向在其他實施例中可能 逆轉。當電流流經此相轉換材料時,焦耳熱效應會導致此 相轉換材料的溫度上升,並且如上所解釋,基於此電流脈 衝的長度與幅度’此元件可被置於一 SET $ reset狀態 鲁下。若僅需讀取此相轉換材料之狀態,則施加一相對低電 流脈衝,足夠決定此材料之電阻即可。在實施例中之此隔 離層係包括有-具備有相對低導熱性之材料,減低從此相 轉換材料所傳導出之熱量,並因此維持其溫度於一高溫。 因此’每-單位電流可達成較大的加熱效果,因而允許較 快的反應時間、較低電流使用量、以及此單元之總加熱量。 存取此記憶胞的控制係由控制元件所提供,較佳地係由 存取電晶體所提供。一替代電路組態可以使用二極體或類 _ 似裝置。第2圖說明了一較佳的設置方式,其中位於同一 搁中的兩個記憶元件l〇a及10b係共用一相同的源極级端 17(S〇UrCe terminal)。如圖中所示,每一記憶元件在結構上 係與上述的記憶元件ίο冲目同,包括導電層l8a⑽、 20a/20b、以及24a/24b ;相轉換層22a/22b ;以及隔離元件 26a/26b。位元線30係與二元件之上導電層28a與接 觸,且每-元件包括有-所屬且相近的字元線16a⑽並 藉由適當的電路連接。一共用源線丨7係經過此記憶胞提 供一電流路徑至此存取電晶體。 13 1<^| 1326120 [0051]為了寫入至§己憶元件1 〇b,舉例而言,適當的致 能訊號(enabling signal)需被送至位元線3〇以及字元線 16b。其結果是,電流將流入記憶胞i〇b,從位元線3〇流 經導電層28b及24b,並流入此相轉變層22b。在此,電流 將產生加熱效果,其接著會致使材料成為結晶相或非晶 相,端視此電流脈衝的幅度以及持續時間而定。讀取此記 憶元件需藉由施加一低電流脈衝經過此元件、並感測此相 轉換元件之電阻值而得以進行。電流繼續經過導電層2% 及18b、栓塞元件14b’經過其下的控制電路而進入共同的 源線17。 製造本發明之裝置的一起始點可見於第3圖,其顯示一 時點接續於基板13的形成之後,此基板包括介電材料12 以及相關特徵,主要是栓塞元件l4a纟14b、字元線W ,16b、以及共同源極線17。在此半導體基板中經摻雜之 區域係作為包括閘極作為字元線l6a及i6b以聯結栓塞 14a,14b^—共同源極線17之電晶體的終端。這些元件較 佳係以&知方式形成,較佳地牵涉到沈積氧化物層、圖形 化以ϋ刻之、並進—步沈積這些金屬元件。 在裝造相轉換元件時會遭遇到的明顯問題是,當一金屬 栓塞係利用最常用之化學氣相沈積或〆些類似的習知方法 形成時,此沈積型態典型地會在此栓塞的中央造成一低陷 或,陷區域。如第3圖中所示的凹陷區域19,即說明了此 ^題因為一沈積層一般係隨著其所沈積至的表面輪廓而 ^因此後續的沈積層無可避免地會顯現相同的外型,而 谷易導致點附或剝離問題。此問題無論對於—直接施加之 1326120 - 相轉換層或一施加至一中介層之相轉換層而言,均是相當 嚴重的。 對於此問題的一個解決方法係如第4圖所示,其說明了 一個基底元件15的形成,其中電極導電層18係沈積至基 • 板13之上。在沈積程序之後,此導電層經平坦化處理’較 佳係使用化學機械研磨(chemical-mechanical polishing, CMP),以提供一完美的平坦表面,並可於其上建構其餘的 結構。 0 第5圖描繪了下一製程步驟的結果,其中一下導電層20 係形成於電極導電層18之上。第6圖繼續進行製程的下一 步驟,沈積相轉換材料22以及第二導電層24。每一層可 - 藉由化學氣相沈積(chemical vapor deposition, CVD)或物理 氣相沈積(physical vapor deposition, PVD)或其他類似方 式而形成。這些層的厚度可為約1〇至厚。在一實 施例中的較佳厚度係為50 nm。此第二導電層可由氮化鈦 或其他類似物所構成,如前所述。較佳地,在進行層2〇,22 籲 及24的此積時’係使用同步沈積技術(丨^加dep〇siti〇n)。 亦即’此結構並未從製程反應室中移出,而此製程反應室 在製程f步驟進行間亦未開啟。維持低壓的反應氣體可在 各層間提供較佳的介面以及附著度,同時改善此裝置的品 質。對於此製程而言’最佳係使用PVD濺鍍方法。本發明 之實施例更藉由使用多晶石夕而進一步改變了此元件的構 造,且另一實施例中則使用了鎢。熟習此項技藝者應能瞭 解在f項應用中使用這些習知材料的方式。較佳地係施加 2層氮化鈦層’如圖所示。第—層氮化鈦層在平坦化後, 15 1326120 提供了優秀的平坦表面給後續的各層。在一實施例中’此 下導電層以及相轉換材料層係利用PVD集束製造設備 . (PVD cluster tooling equipment)沈積而成,其可提供較 佳的黏附以及沈積特徵。 接著,各層材料係經由一系列的微影圖形化製程,而被 轉變為分離的記憶元件。首先請參見第7圖,遮蔽元件25a 及25b係形成於第二導電層24之上,其係藉由沈積一光阻 材料於此結構上、利用一罩幕(reticle)或光罩而使此光阻材 鲁 料曝光、並剝除未曝光部分的光阻材料,而留下此遮蔽元 件。若此遮蔽的尺度係低於所使用微影製程之最小特徵尺 寸,則此遮蔽元件可使用習知方式沈積,並以計時蝕刻方 " 式修剪,較佳地係對於所生成遮蔽進行乾蝕刻,基於氧氣 電漿化學作用而使用一反應式離子姓刻(reactive i〇n etching, RIE)工作。 接著如第8圖所示,此遮蔽元件係用以實行一蝕刻程 序,以移除第二導電層以及相轉換層中沒有被此遮蔽元件 • 覆蓋的部分。當蝕刻至下導電層20時,此蝕刻程序則應停 止。在一實施例中所使用的一蝕刻程序係為使用RIE之一 乾式非等向性蝕刻,並利用氟化氬或氧氣電漿化學作用。 可使用一光學發射工具(〇pticai emissi〇n t〇〇i)來分辨並控 制蝕刻程序的終點,亦即當蝕刻至氮化鈦層時。 在移除了相轉換材料以及第二導電層中過量的氮化鈦 之後,第9圖顯示了一隔離材料層26,其係沈積至第8圖 中所示的結構之上。 此隔離材料層的代表性材料,包括下列元素之複合物所 1326120
形成之材料:矽⑻、碳⑹、氧⑼、氟⑺、及氫 (H)。當導触並非騎时時,料使⑽氮化物或其 他導熱性比二氧化石夕(Si〇2)高的物質。隔熱材料,亦即可用 於隔熱層的物質,可舉例如二氧化矽、矽碳氫氧化物 (SiCOH)、聚亞酿胺、聚醯胺、以及獻碳聚合物,其選擇原 因係因為這些材料的導熱性,係'低於沈積其上的介電填充 層的導熱性。當其上的材料係為二氧化树,此隔孰材料 應具備有-導熱性其低於二氧化砂之導熱性,或低約〇〇14 J/cr^degKic。許多低介電係數材料(1〇w可傲 隔離材料,而低介電值材料之電容率係低於二氧之電 容率。適合用於隔熱隔離層中的物質可舉例包 化石夕、石夕氧院(silsesquioxane)、聚亞芳香喊(—a ether )、聚對二甲苯(parylene)、含氟聚合物、含曰曰^、 鑽石類碳、多孔性二氧切、中孔性二氧切、多^1 氧烧、多孔性聚亞_、以及多孔性聚亞芳㈣ 複合層均可提供隔熱效果。 θ& 其他可選擇的實施例使用了-第二相轉換材料於 離層中’其與層22之分別在於其係經過高度摻雜且推雜 物係如矽、氧、或氮。有了上述的條件,熟習此項技蓺者 可從上述以及其他已知的材料中選擇適當材料,以創^有 效的隔離層。此沈積程序係持續至一超過前二相轉換材料/ 導電材料層結構22a/24a及22b/24b之深度^此結構接著被 平坦化,如第1〇圖所示,較佳地係使用一 CMp製程,、 暴出第一導電層24a及24·1>之上表面。平坦化之後則進 行上導電層28之沈積,如第U圖所示。此層較佳係由氮 1326120 =他適合的材料所構成’如同前述所斷其他導 用以界定並隱離相轉換記憶元件10a及iob的 第12圖及第13圖所示。如第12圖中所示,一光随劑2 沈積至上導電層28的上表面之上。此層係經過圖;化 (pauern)以及蝕刻,以界定光阻劑薄膜及2%。這些薄 膜形成時的寬度’係與相轉換記憶元件的最終理想寬度相 同。在此圖形化步驟之後,如第13圖所示,係針對被光阻 劑薄膜所暴露出的各層進行蝕刻至介電填充層12之平
面。此姓刻製私將留下二個孤立的結構,亦即相轉換記憶 元件10a及10b ’其各包括與栓塞元件14a/14b接觸之一電 極以及下導電層18a/18b及2〇a/2〇b,同時相轉換材料 22a/22b係位於下導電層之上表面、且一第二導電層 24a/24b亦位於相同表面之上,而相轉換材料與第二導電層 一者則形成相轉換核25a/25b。一上導電層28a/28b係與此 第二導電層接觸,且此二導電層以及下導電層/電極導電層 組係橫向延伸超過此相轉換核。在上導電層以及下導電層 之間的空間中’延伸了隔離材料層26a/26b,其係包覆了相 轉換核的兩側。此結構係由蝕刻步驟所界定,而此蝕刻步 驟較佳係為一乾式非等向性蝕刻,其於一實施例中較佳係 使用一反應式離子姓刻(reactive ion etching,RIE)工具所 元成。較佳地在此餘刻步驟中係使用氬、氟、或氯。最佳 地’係於氮化鈦層中使用一氣化學反應,接著轉換至氟化 學反應。 在此需要注意的是,一較佳的隔離材料26並不僅是用
18 1326120 以提供如上所述較低的熱傳導效應,同時在蝕刻製程中其 亦可保護相轉換材料不受到蝕刻劑的作用。否則,蝕刻作 用可能造成相轉換材料下方的過度削切。在本文所示的設 計則可排除上述結果。 在相轉換層以及導電層的蝕刻步驟之後,光阻劑則被剝 除。較佳地係剝除這些光阻劑而非讓光阻劑留在原位,因 為光阻劑中的聚合物質可能在後續步驟中被分解,造成可 能難以處理的有機廢棄材料。較佳的剝除方法係使用氧氣 電漿,之後則可使用一如EKC265之類的適當溶劑進行濕 式蝕刻以增進其效能。這些製程以及其使用方式係在此領 域中廣為週知。 在此製程中的最後步驟,一般係欲製造一已完成的積體 電路產物,如第14及15圖中所示。首先,係形成一由介 電填充材料31所形成之一厚層,其係從先前之介電填充層 12的上表面,延伸至此二相轉換記憶元件10a及10b之上 的一水平面。較佳地在此層中所使用的材斜係與先前層12 中所使用的材料相同,但熟習此項技藝者可瞭解,若使用 不同材料時可能產生的好處,且該些人士亦能瞭解其他可 選擇材料的範圍。 在介電層沈積之後,此介電層31係經平坦化至一水平 面其可暴露出上導電層28a及28b之上表面,如第15圖所 示。在此操作程序中,較佳係使用本領域中所週知的化學 機械研磨方法(CMP)。接著,如同第1圖所示,以適當金 屬形成位元線30,同前所述。 一可提供較少結構複雜度之替代實施例係如第16圖所
19 1326120 示。在此,相轉換記憶元件200係僅由相轉換層222所構 成’其係位於栓塞元件14以及位元線3〇之間。隔離層226 提供了隔熱效果予相轉換材料。在第17圖中可見到一中介 結構一相轉換元件300’其保留了相轉換層322以及隔離層 326’但其中係提供有二導電層328及318於此相轉換層之 上及之下。另一變化方式係如第17a圖所示,其中係加入 第二導電層324於相轉換元件3〇〇的結構中,其位置與功 能係與前述的第二導電元件24相同。較佳地,此實施例並 未包括第17圖中的上導電層328。 另一實施例可允許更有效率的製造流程。本實施例的結 構係如第18圖所示。如圖中所示,一以GST基底121係 形成於下導電層20之上。其他實施例中的第二導電層24 係被省略,同時相轉換元件122則從GST基底121延伸至 上導電層28°此實施例的功能係類似於先前的各實施例, 其電流係從控制電路流經栓塞元件14、流經電極導電層 18下導電層20、以及GST基底121,之後流經相轉換元 件122。電流接著經由上導電層28離開此元件,而流至位 元線30。 第18圖實施例的製造過程係如第19-25圖所示。此流 程的初始步驟係與先前實施例相同,歷經基板及相關元件 的生成、以及電極導電層18與下導電層20的沈積。接著 則接續至第19圖所示的程序,GST層119係沈積至下導電 層之^。此層係比先前各層為厚,其原因將敘述於下。此 θ的厚度較佳係介於7〇nm與i5〇 nm之間,且最 1〇〇nm°此GST層係經由微影製程而圖形化以形成 1326120
基底*第20及21圖所示,其係與各導電層共同延伸, =柱狀的相轉換元件122a及mb係由此挪基底向上 广出。如同在其他微影製程中所討論,較佳係使用二削切 tTg)程序以形成微影遮蔽元件,其尺寸係小於此給定 :最小特徵尺寸所允許者。不同於先前钱刻步驟的是, 不70全移除所餘刻的層。剩餘的gst層係作為相 的機二強電極間的熱隔離層’並提供此記憶較佳 50: 係介於2°至7。η"1之間’且較佳係為 隔離材料26係於下一步驟中沈積(第22圖),較佳係 SC,二覆盖此些相轉換元件。此材料接著係 j移除車父佳係使用—CMp製程,如第23_示, =相轉換元件l22a及122b之上表面。如先前實施例中 所提及’-較佳係由氮化輯形成之上電極層2 ==之。第24圖)。這些單獨的記憶元件2 放衫方式形成,從遮蔽元件29a及2%開始,如第2 示該時點開始’係以習知微影餘刻製程此繼續二斤 接耆沈積位元線3G以及額外的介電填充材料31,以^ 如第18圖所示之結構。 ^成 先前實施射所提及之各尺度在本實施例中亦適用 了 GST層的厚度以外。先前關於騎料的討論在此亦適= 雖然本發明係已參照較佳實施例來加以描述,將為五 所瞭解的I本發明創作並未受限於其詳細描述内容: 換方式及修改樣式係已於先前描述中所建議,並且其他Ϊ 換方式及修改樣式將為熟f此項技#之人士所思及。特別 ν<?| 21 1326120 是,根據本發明之結構與方法,所有具有實質上相同於本 發明之構件結合而達成與本發明實質上相同結果者皆不脫 離本發明之精神範疇。因此,所有此等替換方式及修改樣 式係意欲落在本發明於隨附申請專利範圍及其均等物所界 定的範疇之中。 【圖式簡單說明】 第1圖係說明本發明之相轉換記憶元件。 第2圖係說明依隨機存取記憶胞其包括一本發明之相 轉換記憶元件。 第3圖係說明在製造本發明之隨機存取記憶胞程序中 之一初始步驟。 第4圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第5圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第6圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第7圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第8圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第9圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第10圖係說明在製造本發明之隨機存取記憶胞程序中
22 1326120 之一後續步驟。 第π圖係说明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第12圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第13圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第14圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第15圖係說明在製造本發明之隨機存取記憶胞程序中 之一後續步驟。 第16圖係說明本發明之隨機存取記憶胞之另一實施 例0 第17圖係說明本發明之隨機存取記憶胞之另一實施 例。 第18圖係說明本發明之隨機存取記憶胞之又一實施 例。 第19圖係說明當製造圖18中之隨機存取記憶胞時之一 初始步驟。 第20圖係說明當製造圖18中之隨機存取記憶胞時之一 後續步驟。 第21圖係說明當製造圖ι8中之隨機存取記憶胞時之一 後續步驟。 第22圖係說明當製造圖ι8中之隨機存取記憶胞時之一 後續步驟。 23 1326120 第23圖係說明當製造圖18中之隨機存取記憶胞時之一 後續步驟。 第24圖係說明當製造圖18中之隨機存取記憶胞時之一 後續步驟。 第25圖係說明當製造圖18中之隨機存取記憶胞時之一 後續步驟。 【主要元件符號說明】
10 相轉換記憶元件 119 GST 層 12 介電填充物 121 GST基底 122, 122a, 122b相轉換元件 13 基板 14 栓塞電極 15 基底元件 16 字元線 17 源極終端 18 電極導電層 19 凹陷區域 20 下導電層 22 相轉換材料薄膜 24,24a,24b第二導電層 25 相轉換核心 25a,25b遮蔽元件 24 1326120 26 隔離材料 28, 28a,28b上導電層 30 位元線 200 相轉換記憶元件 222 相轉換層 226 隔離層 300 相轉換元件 322 相轉換層 324 第二導電層 318 導電層 326 隔離層 328 導電層
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Claims (1)
1326120 中華民國發明專利申請案第 095129115 號 十、申請專利範圍: 無射線之申請專利範圍替換本 中華民國98年8月3曰送呈 1. 一種記憶裝置,其包括: 一介電材料層; 第一及第二電極,其係垂直地分離並包括有彼此相對之 接觸表面;以及 一相轉換記憶元件(phase change memory element),其係 被包覆於該介電材料層中,包括: 一相轉換層,其係位於該些電極之間且與該些電極 形成電性接觸,其中該相轉換層之橫向寬度係短於該些電 極之橫向寬度;以及 隔離材料,其係位於該相轉換層以及該介電材料層 之間,其中該隔離材料之導熱性係低於該介電材料之導熱 性; 複數個導電金屬層,其係插設於該第一電極以及該相轉 換記憶元件之間,以及插設於該相轉換記憶元件與該第二 φ 電極之間。 2. 如申請專利範圍第1項所述之記憶裝置,其中該相轉換 層係包括一由錯(Ge)、録(Sb)、及碲(Te)所形成之複合物。 3. 如申請專利範圍第1項所述之記憶裝置,其中該相轉換 層係包括有一厚度介於約1〇至nm之間。 4·如申請專利範圍第1項所述之記憶裝置’其中該相轉換 層之厚度係為約40 nm。 ::〇DMA\PCDCX:S\TPEDMS\65573M 26 1326120 5. 如申請專利範圍第1項所述之記憶裝置,其中該相轉換 層係包括一由選自下列群組二者以上者所形成之複合物: 鍺(Ge)、銻(Sb)、碲(Te)、鈦(Ti)、銦(In)、鎵(Ga)、鉍(Bi)、 錫(Sn)、銅(Cu)、鈀(Pd)、鉛(Pb)、銀(Ag)、硫(S)及金(Au)。 6. 如申請專利範圍第1項所述之記憶裝置,其中該些導電 層係包括一選自下列群組之物質:氮化鈦(TiN)、氮化钽 (TaN)、氮化鋁鈦(TiAIN)、以及氮化鋁鈕(TaAIN)。 7. 如申請專利範圍第1項所述之記憶裝置,其中該些導電 層係包括由下列物質所形成之複合物:鈦(Ti)、鎢(W)、鉬 (Mo)、鋁(A1)、鈕(Ta)、銅(Cu)、鉑(Pt)、銥⑻、鑭(La)、 鎳(Ni)、以及釕(Ru)。 8. 如申請專利範圍第1項所述之記憶裝置,其中該隔離材 料包括一材料其導熱性與電容率(permittivity)係低於二氧 化矽之導熱性及電容率。 9. 如申請專利範圍第1項所述之記憶裝置,其中該隔離材 料係包括有一相轉換材料。 10. 如申請專利範圍第1項所述之記憶裝置,其中該隔離 材料係環繞並保護該相轉換層。 27 ::ODMA\PCDOCS\TPEDMS\65573\l 1,326120 11. 一種記憶裝置,其包括: 複數個栓塞電極(plug electrode)元件; 一位元線(bit line)其係用以傳輸電訊號; 複數個相轉換記憶元件,每一該元件係包括: 一上導電層,其係電接觸至該位元線; 一下導電層,其係電接觸至一栓塞電極元件; 一第二導電層,其係電接觸至該些上導電層; 其中該上導電層、下導電層以及第二導電層係包括 氮化鈦; 一相轉換層其係位於該第二導電層與該下導電層 間且與該二者形成電接觸,其中該相轉換層之橫向寬度係 低於該上導電層與該下導電層之橫向寬度,並由一由鍺、 銻、及碲所形成之複合物所構成,且其厚度係介於約10至 100 nm之間; 一介電填充材料包覆該栓塞電極元件以及該相轉 換記憶元件;以及 一隔離材料位於該上與下導電層之間,其中該隔離 材料之導熱性係低於該介電填充材料之導熱性。 12. 如申請專利範圍第11項所述之記憶裝置,其中該相轉 換記憶元件係包括一由下列群組中之二者或以上者所形成 之相轉換層:鍺(Ge)、銻(Sb)、碲(Te)、鈦(Ti)、銦(In)、鎵 (Ga)、鉍(Bi)、錫(Sn)、銅(Cu)、鈀(Pd) ' 鉛(Pb)、銀(Ag)、 硫(S)及金(Au)。 28 ::ODMA\PCDOCS\T1PEDMS^5573M 1326120 13. 如申請專利範圍第11項所述之記憶裝置,其中該相轉 換層之厚度係為約40 nm。 14. 如申請專利範圍第11項所述之記憶裝置,其中該上、 下、以及第二導電層係包括一選自下列群組之物質:氮化 鈦(TiN)、氮化鈕(TaN)、氮化鋁鈦(TiAIN)、以及氮化鋁钽 (TaAIN)。 15. 如申請專利範圍第11項所述之記憶裝置,其中該上、 下、以及第二導電層係包括一由下列各元素所形成之複合 物:鈦(Ti)、鎢(W)、鉬(Mo)、鋁(A1)、鈕(Ta)、銅(Cu)、鉑 (Pt)、銥(Ir)、鑭(La)、鎳(Ni)、以及釕(Ru)。 16. 如申請專利範圍第11項所述之記憶裝置,其中該隔離 材料係包括一相轉換材料。 17. 如申請專利範圍第11項所述之記憶裝置,其中該隔離 材料係包括一低介電係數材料(low-K material)。 18. —種用以建構一記憶裝置之方法,其包括下列步驟: 提供一基板,其包括在其中形成有栓塞電極之介電材 料,並包括有一上表面其係暴露出該些栓塞電極; 沈積一電極導電層於該基板之上表面; 平坦化該電極導電層, 沈積一下導電層於該電極導電層之上; 29 ::ODMA\PCDOCS\TPEDMS\65573\l 1326120 沈積一相轉換層於該下導電層之上; 沈積一第二導電層於該相轉換層之上; 藉由圖形化並蝕刻該相轉換層以及第二導電層,以形 成一相轉換元件以及第二導電元件; 沈積一隔離層至一可覆蓋該相轉換元件以及第二導電 元件之厚度; 平坦化該隔離層以暴露該第二導電元件; 沈積一上導電層至該隔離層之上; 藉由圖形化並非等向性蝕刻而隔離該相轉換元件,使 得該上導電層之橫向寬度係大於該相轉換元件之橫向寬 度,且使該隔離層包覆該相轉換元件; 沈積介電填充材料以包覆該相轉換元件;以及 平坦化該介電填充材料,以暴露出該上導電層。 19.如申請專利範圍第18項所述之方法,更包括沈積一電 極構件其係與該上導電層接觸。 2〇·如申請專利範圍第18項所述之方法,其中該圖型化並 姓刻該相轉換層以及第二導電層之步驟,包括使用一微影 (hth0graphic)製程中應用微影元件,其特徵在於一最小特徵 尺寸,以及修剪該微影元件至小於該最小特徵尺寸的一尺 寸。 ’其中該沈積該相轉 由同步沈積方法(in 21.如申請專利範圍第π所述之方法 換層與沈積該第二導電層等步驟,係 ::〇DMA\PCDOCS\TPEDMS\65573\l 30 1326120 situ deposition)所完成。 22. —種用以建構一記憶裝置之方法,其包括下列步驟: 提供一基板’其包括在其中形成有栓塞電極之介電材 料’並包括有一上表面其係暴露出該些栓塞電極; 沈積一電極導電層於該基板之上表面; 平坦化該電極導電層; 沈積一下導電層於該電極導電層之上; 沈積一相轉換層於該下導電層之上; 藉由圖型化並蝕刻該相轉換層,以形成一相轉換元件; 沈積一隔離層至一可覆蓋該相轉換元件之厚度; 平坦化該隔離層以暴露該相轉換元件; 沈積一上導電層至該隔離層之上; 藉由圖形化並非等向性蝕刻而隔離一相轉換元件,使 得該上導電層之橫向寬度係大於該相轉換元件之橫向寬 度,且使該隔離層包覆該相轉換元件; 沈積介電填充材料以包覆該相轉換元件;以及 平坦化該介電填充材料,以暴露出該上導電層。 23. —種記憶裝置,其包括: 複數個栓塞電極(plug electrode)元件; 一位元線(bit line)其係用以傳輸電訊號; 複數個相轉換記憶元件’每一該元件係包括: 一相轉換層其係位於該位元線與該栓塞電極元件 之間且與該二者電接觸’其中該相轉換層之橫向寬度係少 31 ::ODMA\PCDOCS\TPEDMS\65573\1 1326120 中華民國發明專利申請案第095129115號 無«線之申請專利範圍替換頁第32頁 中華民國98年12月妒日送呈 於該栓塞電極元件之橫向寬度,且係由一由鍺、銻、及碲 所形成之複合物所構成,並包括一厚度介於約10至100 nm 之間; 一介電填充材料其係包覆該栓塞電極元件以及該 相轉換記憶元件;以及 一隔離材料其係位於該位元線與該栓塞電極元件 之間、且包圍該相轉換層,其中該隔離材料之導熱性係低 於該介電填充材料之導熱性。 24. 如申請專利範圍第23項所述之記憶裝置,更包括一下 導電層其係位於該检塞電極與該相轉換層之間,以及·一上 導電層其係位於該位元線與該相轉換層之間。 25. 如申請專利範圍第24項所述之記憶裝置,更包括一第 二導電層其係位於該上導電層與該相轉換層之間,且其係 被該隔離材料所環繞。 26. —種用以建構一記憶裝置之方法,其包括下列步驟: 提供一結構其包括一相轉換元件,其係經圖型化並形 成於一下層(underlying layer)之上; 沈積一隔離材料層至一覆蓋該相轉換元件之厚度;以 及 圖形化並非等向性蝕刻該隔離材料,使得該隔離材料 環繞並保護該相轉換元件。 32 1326120 27. —種記憶裝置,其包括: 複數個栓塞電極元件; 一位元線,其係用以傳輸電訊號; 複數個相轉換記憶元件,每一該元件係包括: 一上導電層,其係電接觸至該位元線; 一下導電層,其係電接觸至一栓塞電極元件; 一相轉換層其係位於該上導電層與該下導電層之間 並與該二者形成電接觸,其中該相轉換層係包括一基底部 分其大致上係與栓塞電極元件共同延伸、以及一突出部份 其係自該基底部分突出至該上導電層,且該相轉換層係以 一由鍺、銻、及碲所形成之複合物所構成,並包括一厚度 介於約10至100 nm之間; 介電填充材料其係包覆該栓塞電極元件以及該相轉 換記憶元件;以及 隔離材料其係位於該上與下導電層之間,並包覆且 保護該相轉換層之突出部分,其中該隔離材料之導熱性係 低於該介電填充材料之導熱性。 33 ::ODMA\PCDOCS\TPEDMS\65573\l
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-
2006
- 2006-01-24 US US11/338,284 patent/US7394088B2/en active Active
- 2006-02-13 US US11/352,755 patent/US7471555B2/en active Active
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TWI315576B (en) | 2009-10-01 |
US7932101B2 (en) | 2011-04-26 |
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TW200719435A (en) | 2007-05-16 |
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US20070108430A1 (en) | 2007-05-17 |
CN1967896A (zh) | 2007-05-23 |
US7471555B2 (en) | 2008-12-30 |
TW200802804A (en) | 2008-01-01 |
US20070109836A1 (en) | 2007-05-17 |
CN1967896B (zh) | 2010-05-12 |
CN101013737A (zh) | 2007-08-08 |
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