TWI324787B - Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer - Google Patents
Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer Download PDFInfo
- Publication number
- TWI324787B TWI324787B TW092128684A TW92128684A TWI324787B TW I324787 B TWI324787 B TW I324787B TW 092128684 A TW092128684 A TW 092128684A TW 92128684 A TW92128684 A TW 92128684A TW I324787 B TWI324787 B TW I324787B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- strained
- semiconductor device
- compressed material
- oxide
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 239000000463 material Substances 0.000 title claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 title description 2
- 239000010703 silicon Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 43
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 3
- 230000006835 compression Effects 0.000 claims 2
- 238000007906 compression Methods 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 108
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 14
- -1 oxygen ions Chemical class 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000005476 soldering Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/272,979 US6707106B1 (en) | 2002-10-18 | 2002-10-18 | Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200416788A TW200416788A (en) | 2004-09-01 |
| TWI324787B true TWI324787B (en) | 2010-05-11 |
Family
ID=31946532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092128684A TWI324787B (en) | 2002-10-18 | 2003-10-16 | Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6707106B1 (enExample) |
| EP (1) | EP1552554A2 (enExample) |
| JP (1) | JP2006503442A (enExample) |
| KR (1) | KR101018835B1 (enExample) |
| CN (1) | CN1320628C (enExample) |
| AU (1) | AU2003299550A1 (enExample) |
| TW (1) | TWI324787B (enExample) |
| WO (1) | WO2004040619A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
| US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
| US6940089B2 (en) * | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
| WO2003079415A2 (en) * | 2002-03-14 | 2003-09-25 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
| US7307273B2 (en) * | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
| US7335545B2 (en) * | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
| US6995430B2 (en) * | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
| US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| JP3664704B2 (ja) * | 2002-10-03 | 2005-06-29 | 沖電気工業株式会社 | 半導体装置 |
| KR100498475B1 (ko) * | 2003-01-07 | 2005-07-01 | 삼성전자주식회사 | 모스 전계 효과 트랜지스터 구조 및 그 제조 방법 |
| US6916694B2 (en) * | 2003-08-28 | 2005-07-12 | International Business Machines Corporation | Strained silicon-channel MOSFET using a damascene gate process |
| US7144818B2 (en) * | 2003-12-05 | 2006-12-05 | Advanced Micro Devices, Inc. | Semiconductor substrate and processes therefor |
| JP2006041135A (ja) * | 2004-07-26 | 2006-02-09 | Sumitomo Bakelite Co Ltd | 電子デバイスおよびその製造方法 |
| EP1782472B1 (en) * | 2004-08-18 | 2011-10-05 | Corning Incorporated | Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures |
| US7112848B2 (en) * | 2004-09-13 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin channel MOSFET with source/drain stressors |
| US7078722B2 (en) * | 2004-09-20 | 2006-07-18 | International Business Machines Corporation | NFET and PFET devices and methods of fabricating same |
| US7204162B2 (en) * | 2004-11-23 | 2007-04-17 | Delphi Technologies, Inc. | Capacitive strain gauge |
| US7393733B2 (en) * | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
| US7585711B2 (en) * | 2006-08-02 | 2009-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor-on-insulator (SOI) strained active area transistor |
| US7528056B2 (en) * | 2007-01-12 | 2009-05-05 | International Business Machines Corporation | Low-cost strained SOI substrate for high-performance CMOS technology |
| US7737498B2 (en) * | 2008-05-07 | 2010-06-15 | International Business Machines Corporation | Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices |
| US8084822B2 (en) * | 2009-09-30 | 2011-12-27 | International Business Machines Corporation | Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices |
| US8361867B2 (en) | 2010-03-19 | 2013-01-29 | Acorn Technologies, Inc. | Biaxial strained field effect transistor devices |
| US9059201B2 (en) | 2010-04-28 | 2015-06-16 | Acorn Technologies, Inc. | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation |
| US8361868B2 (en) | 2010-04-28 | 2013-01-29 | Acorn Technologies, Inc. | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation |
| US9406798B2 (en) * | 2010-08-27 | 2016-08-02 | Acorn Technologies, Inc. | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer |
| US10833194B2 (en) | 2010-08-27 | 2020-11-10 | Acorn Semi, Llc | SOI wafers and devices with buried stressor |
| US8395213B2 (en) | 2010-08-27 | 2013-03-12 | Acorn Technologies, Inc. | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer |
| US8536032B2 (en) | 2011-06-08 | 2013-09-17 | International Business Machines Corporation | Formation of embedded stressor through ion implantation |
| US8981523B2 (en) * | 2012-03-14 | 2015-03-17 | International Business Machines Corporation | Programmable fuse structure and methods of forming |
| US9362400B1 (en) | 2015-03-06 | 2016-06-07 | International Business Machines Corporation | Semiconductor device including dielectrically isolated finFETs and buried stressor |
| US9524969B1 (en) | 2015-07-29 | 2016-12-20 | International Business Machines Corporation | Integrated circuit having strained fins on bulk substrate |
| CN113035716B (zh) * | 2021-02-08 | 2022-07-22 | 西安电子科技大学 | 基于22nm工艺的SONOS结构抗辐照FDSOI场效应管及其制备方法 |
| EP4406008A1 (en) | 2021-09-22 | 2024-07-31 | Acorn Semi, Llc | Multi-finger rf nfet having buried stressor layer and isolation trenches between gates |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362667A (en) | 1992-07-28 | 1994-11-08 | Harris Corporation | Bonded wafer processing |
| CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers |
| US5146298A (en) * | 1991-08-16 | 1992-09-08 | Eklund Klas H | Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor |
| US5461243A (en) * | 1993-10-29 | 1995-10-24 | International Business Machines Corporation | Substrate for tensilely strained semiconductor |
| JP3427114B2 (ja) | 1994-06-03 | 2003-07-14 | コマツ電子金属株式会社 | 半導体デバイス製造方法 |
| US6043166A (en) | 1996-12-03 | 2000-03-28 | International Business Machines Corporation | Silicon-on-insulator substrates using low dose implantation |
| JP3645390B2 (ja) * | 1997-01-17 | 2005-05-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US5897362A (en) | 1998-04-17 | 1999-04-27 | Lucent Technologies Inc. | Bonding silicon wafers |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100532367B1 (ko) | 1998-09-16 | 2006-01-27 | 페어차일드코리아반도체 주식회사 | 보호 다이오드를 내재한 수평형 확산 모스 트랜지스터 및 그 제조방법 |
| US6174820B1 (en) | 1999-02-16 | 2001-01-16 | Sandia Corporation | Use of silicon oxynitride as a sacrificial material for microelectromechanical devices |
| US20020089032A1 (en) * | 1999-08-23 | 2002-07-11 | Feng-Yi Huang | Processing method for forming dislocation-free silicon-on-insulator substrate prepared by implantation of oxygen |
| US6339232B1 (en) | 1999-09-20 | 2002-01-15 | Kabushika Kaisha Toshiba | Semiconductor device |
| US6319775B1 (en) * | 1999-10-25 | 2001-11-20 | Advanced Micro Devices, Inc. | Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device |
| JP3607194B2 (ja) * | 1999-11-26 | 2005-01-05 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、及び半導体基板 |
| JP4406995B2 (ja) * | 2000-03-27 | 2010-02-03 | パナソニック株式会社 | 半導体基板および半導体基板の製造方法 |
| JP2001338988A (ja) * | 2000-05-25 | 2001-12-07 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
| JP2002164520A (ja) * | 2000-11-27 | 2002-06-07 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
| US6723661B2 (en) * | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
| JP3995428B2 (ja) * | 2001-03-29 | 2007-10-24 | 株式会社東芝 | 半導体基板の製造方法及び半導体装置の製造方法 |
| US6603156B2 (en) * | 2001-03-31 | 2003-08-05 | International Business Machines Corporation | Strained silicon on insulator structures |
| US6838728B2 (en) * | 2001-08-09 | 2005-01-04 | Amberwave Systems Corporation | Buried-channel devices and substrates for fabrication of semiconductor-based devices |
| DE10231964A1 (de) * | 2002-07-15 | 2004-02-19 | Infineon Technologies Ag | Halbleiterbauelement mit stressaufnehmender Halbleiterschicht sowie zugehöriges Herstellungsverfahren |
-
2002
- 2002-10-18 US US10/272,979 patent/US6707106B1/en not_active Expired - Lifetime
-
2003
- 2003-10-14 EP EP03799836A patent/EP1552554A2/en not_active Withdrawn
- 2003-10-14 JP JP2004548388A patent/JP2006503442A/ja active Pending
- 2003-10-14 KR KR1020057006718A patent/KR101018835B1/ko not_active Expired - Fee Related
- 2003-10-14 WO PCT/US2003/032770 patent/WO2004040619A2/en not_active Ceased
- 2003-10-14 CN CNB2003801016755A patent/CN1320628C/zh not_active Expired - Lifetime
- 2003-10-14 AU AU2003299550A patent/AU2003299550A1/en not_active Abandoned
- 2003-10-16 TW TW092128684A patent/TWI324787B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1320628C (zh) | 2007-06-06 |
| AU2003299550A8 (en) | 2004-05-25 |
| EP1552554A2 (en) | 2005-07-13 |
| AU2003299550A1 (en) | 2004-05-25 |
| WO2004040619A2 (en) | 2004-05-13 |
| KR20050062628A (ko) | 2005-06-23 |
| US6707106B1 (en) | 2004-03-16 |
| WO2004040619A3 (en) | 2004-11-04 |
| CN1706038A (zh) | 2005-12-07 |
| JP2006503442A (ja) | 2006-01-26 |
| KR101018835B1 (ko) | 2011-03-04 |
| TW200416788A (en) | 2004-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI324787B (en) | Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer | |
| US7422956B2 (en) | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers | |
| TWI222711B (en) | Chip incorporating partially-depleted, fully-depleted and multiple-gate transistors and method of fabricating the multiple-gate transistor | |
| US7812397B2 (en) | Ultra thin channel (UTC) MOSFET structure formed on BOX regions having different depths and different thicknesses beneath the UTC and source/drain regions and method of manufacture thereof | |
| CN1956199B (zh) | 半导体结构及其制造方法 | |
| US20080230852A1 (en) | Fabrication of FinFETs with multiple fin heights | |
| US8053373B2 (en) | Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX) | |
| US8492803B2 (en) | Field effect device with reduced thickness gate | |
| KR20020079498A (ko) | 반도체부재의 제조방법 및 반도체장치의 제조방법 | |
| TW200524088A (en) | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding | |
| US7235433B2 (en) | Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device | |
| TW201112421A (en) | A fin field effect transistor | |
| JP2004319808A (ja) | Ｍｉｓ電界効果トランジスタ及びその製造方法 | |
| KR100276953B1 (ko) | 반도체장치 및 그 제조방법 | |
| US6642536B1 (en) | Hybrid silicon on insulator/bulk strained silicon technology | |
| US7538016B2 (en) | Signal and/or ground planes with double buried insulator layers and fabrication process | |
| CN113454768B (zh) | 用于数字应用和射频应用的半导体结构 | |
| JPH06275803A (ja) | 半導体装置及びその製造方法 | |
| JP2004119549A (ja) | 半導体装置およびその製造方法 | |
| JP3816746B2 (ja) | Ｍｏｓ型電界効果トランジスタ及びその製造方法 | |
| TW492084B (en) | Manufacturing method of the semiconductor device having self-aligned metal source/drain | |
| JP2000124458A (ja) | 半導体装置の製造方法 | |
| US20050158984A1 (en) | Method for manufacturing semiconductor device | |
| JPH05304206A (ja) | 半導体装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |