CN1320628C - 通过掩埋氧化物层中的压缩材料导入张力应变硅的半导体器件及其形成方法 - Google Patents

通过掩埋氧化物层中的压缩材料导入张力应变硅的半导体器件及其形成方法 Download PDF

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Publication number
CN1320628C
CN1320628C CNB2003801016755A CN200380101675A CN1320628C CN 1320628 C CN1320628 C CN 1320628C CN B2003801016755 A CNB2003801016755 A CN B2003801016755A CN 200380101675 A CN200380101675 A CN 200380101675A CN 1320628 C CN1320628 C CN 1320628C
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layer
silicon
compressive material
semiconductor device
semiconductor
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Chinese (zh)
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CN1706038A (zh
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D·J·瑞斯特
相奇
J·F·布勒
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GlobalFoundries US Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
CNB2003801016755A 2002-10-18 2003-10-14 通过掩埋氧化物层中的压缩材料导入张力应变硅的半导体器件及其形成方法 Expired - Lifetime CN1320628C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/272,979 2002-10-18
US10/272,979 US6707106B1 (en) 2002-10-18 2002-10-18 Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer

Publications (2)

Publication Number Publication Date
CN1706038A CN1706038A (zh) 2005-12-07
CN1320628C true CN1320628C (zh) 2007-06-06

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CNB2003801016755A Expired - Lifetime CN1320628C (zh) 2002-10-18 2003-10-14 通过掩埋氧化物层中的压缩材料导入张力应变硅的半导体器件及其形成方法

Country Status (8)

Country Link
US (1) US6707106B1 (enExample)
EP (1) EP1552554A2 (enExample)
JP (1) JP2006503442A (enExample)
KR (1) KR101018835B1 (enExample)
CN (1) CN1320628C (enExample)
AU (1) AU2003299550A1 (enExample)
TW (1) TWI324787B (enExample)
WO (1) WO2004040619A2 (enExample)

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US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
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US6916694B2 (en) * 2003-08-28 2005-07-12 International Business Machines Corporation Strained silicon-channel MOSFET using a damascene gate process
US7144818B2 (en) * 2003-12-05 2006-12-05 Advanced Micro Devices, Inc. Semiconductor substrate and processes therefor
JP2006041135A (ja) * 2004-07-26 2006-02-09 Sumitomo Bakelite Co Ltd 電子デバイスおよびその製造方法
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US7112848B2 (en) * 2004-09-13 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thin channel MOSFET with source/drain stressors
US7078722B2 (en) * 2004-09-20 2006-07-18 International Business Machines Corporation NFET and PFET devices and methods of fabricating same
US7204162B2 (en) * 2004-11-23 2007-04-17 Delphi Technologies, Inc. Capacitive strain gauge
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US7585711B2 (en) * 2006-08-02 2009-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor-on-insulator (SOI) strained active area transistor
US7737498B2 (en) * 2008-05-07 2010-06-15 International Business Machines Corporation Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
US8084822B2 (en) * 2009-09-30 2011-12-27 International Business Machines Corporation Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices
US8361867B2 (en) 2010-03-19 2013-01-29 Acorn Technologies, Inc. Biaxial strained field effect transistor devices
US9059201B2 (en) 2010-04-28 2015-06-16 Acorn Technologies, Inc. Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
US8361868B2 (en) 2010-04-28 2013-01-29 Acorn Technologies, Inc. Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
US9406798B2 (en) * 2010-08-27 2016-08-02 Acorn Technologies, Inc. Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
US10833194B2 (en) 2010-08-27 2020-11-10 Acorn Semi, Llc SOI wafers and devices with buried stressor
US8395213B2 (en) 2010-08-27 2013-03-12 Acorn Technologies, Inc. Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
US8536032B2 (en) 2011-06-08 2013-09-17 International Business Machines Corporation Formation of embedded stressor through ion implantation
US8981523B2 (en) * 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming
US9362400B1 (en) 2015-03-06 2016-06-07 International Business Machines Corporation Semiconductor device including dielectrically isolated finFETs and buried stressor
US9524969B1 (en) 2015-07-29 2016-12-20 International Business Machines Corporation Integrated circuit having strained fins on bulk substrate
CN113035716B (zh) * 2021-02-08 2022-07-22 西安电子科技大学 基于22nm工艺的SONOS结构抗辐照FDSOI场效应管及其制备方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101256949B (zh) * 2007-01-12 2010-09-29 国际商业机器公司 应变soi衬底的制造方法和在其上制造cmos器件的方法

Also Published As

Publication number Publication date
AU2003299550A8 (en) 2004-05-25
EP1552554A2 (en) 2005-07-13
AU2003299550A1 (en) 2004-05-25
WO2004040619A2 (en) 2004-05-13
KR20050062628A (ko) 2005-06-23
TWI324787B (en) 2010-05-11
US6707106B1 (en) 2004-03-16
WO2004040619A3 (en) 2004-11-04
CN1706038A (zh) 2005-12-07
JP2006503442A (ja) 2006-01-26
KR101018835B1 (ko) 2011-03-04
TW200416788A (en) 2004-09-01

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