TWI318222B - Organometallic compounds and method of depositing a metal film using the same - Google Patents
Organometallic compounds and method of depositing a metal film using the sameInfo
- Publication number
- TWI318222B TWI318222B TW093109194A TW93109194A TWI318222B TW I318222 B TWI318222 B TW I318222B TW 093109194 A TW093109194 A TW 093109194A TW 93109194 A TW93109194 A TW 93109194A TW I318222 B TWI318222 B TW I318222B
- Authority
- TW
- Taiwan
- Prior art keywords
- depositing
- same
- metal film
- organometallic compounds
- organometallic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q10/00—Administration; Management
- G06Q10/10—Office automation; Time management
- G06Q10/109—Time management, e.g. calendars, reminders, meetings or time accounting
- G06Q10/1091—Recording time for administrative or management purposes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/117—Identification of persons
- A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
- A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C391/00—Compounds containing selenium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C395/00—Compounds containing tellurium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
- C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0825—Preparations of compounds not comprising Si-Si or Si-cyano linkages
- C07F7/0827—Syntheses with formation of a Si-C bond
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q10/00—Administration; Management
- G06Q10/06—Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
- G06Q10/063—Operations research, analysis or management
- G06Q10/0631—Resource planning, allocation, distributing or scheduling for enterprises or organisations
- G06Q10/06311—Scheduling, planning or task assignment for a person or group
- G06Q10/063116—Schedule adjustment for a person or group
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V20/00—Scenes; Scene-specific elements
- G06V20/80—Recognising image objects characterised by unique random patterns
-
- G—PHYSICS
- G07—CHECKING-DEVICES
- G07C—TIME OR ATTENDANCE REGISTERS; REGISTERING OR INDICATING THE WORKING OF MACHINES; GENERATING RANDOM NUMBERS; VOTING OR LOTTERY APPARATUS; ARRANGEMENTS, SYSTEMS OR APPARATUS FOR CHECKING NOT PROVIDED FOR ELSEWHERE
- G07C1/00—Registering, indicating or recording the time of events or elapsed time, e.g. time-recorders for work people
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Business, Economics & Management (AREA)
- Human Resources & Organizations (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Entrepreneurship & Innovation (AREA)
- Strategic Management (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Economics (AREA)
- Theoretical Computer Science (AREA)
- General Business, Economics & Management (AREA)
- Tourism & Hospitality (AREA)
- Quality & Reliability (AREA)
- Operations Research (AREA)
- Marketing (AREA)
- Inorganic Chemistry (AREA)
- Educational Administration (AREA)
- Medical Informatics (AREA)
- Animal Behavior & Ethology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Biophysics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Data Mining & Analysis (AREA)
- Development Economics (AREA)
- Game Theory and Decision Science (AREA)
- Multimedia (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46079103P | 2003-04-05 | 2003-04-05 | |
| US51347603P | 2003-10-22 | 2003-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200424243A TW200424243A (en) | 2004-11-16 |
| TWI318222B true TWI318222B (en) | 2009-12-11 |
Family
ID=32853627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093109194A TWI318222B (en) | 2003-04-05 | 2004-04-02 | Organometallic compounds and method of depositing a metal film using the same |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7413776B2 (enExample) |
| EP (2) | EP1464724B1 (enExample) |
| JP (2) | JP4954448B2 (enExample) |
| KR (2) | KR101200524B1 (enExample) |
| CN (1) | CN100516289C (enExample) |
| DE (2) | DE602004018219D1 (enExample) |
| SG (1) | SG126757A1 (enExample) |
| TW (1) | TWI318222B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8525244B2 (en) | 2006-07-13 | 2013-09-03 | Samsung Electronics Co., Ltd. | Germanium compound, semiconductor device fabricated using the same, and methods of forming the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4714422B2 (ja) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
| US20060172068A1 (en) * | 2005-01-28 | 2006-08-03 | Ovshinsky Stanford R | Deposition of multilayer structures including layers of germanium and/or germanium alloys |
| KR20080101893A (ko) * | 2006-02-08 | 2008-11-21 | 제이에스알 가부시끼가이샤 | 금속막의 형성 방법 |
| JP4957037B2 (ja) * | 2006-03-24 | 2012-06-20 | 東ソー株式会社 | 有機シラン化合物、それを含むSi含有膜形成材料、製造方法および用途 |
| GB2452224B (en) | 2006-06-20 | 2011-02-23 | Inst Energiteknik | The use of biphenyl, terphenyl, and fluorene sulphonic acid based tracers for monitoring streams of fluids |
| US8318966B2 (en) * | 2006-06-23 | 2012-11-27 | Praxair Technology, Inc. | Organometallic compounds |
| CN101678665B (zh) * | 2007-04-02 | 2013-07-10 | 代表亚利桑那州立大学行事的亚利桑那董事会 | 制备和使用卤代甲硅烷基锗烷的新方法 |
| US20080312356A1 (en) * | 2007-06-13 | 2008-12-18 | Applied Mcrostructures, Inc. | Vapor-deposited biocompatible coatings which adhere to various plastics and metal |
| KR20100084157A (ko) | 2007-09-17 | 2010-07-23 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Gst 필름 증착용 텔루륨 전구체 |
| US20090162973A1 (en) * | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
| KR100960355B1 (ko) * | 2008-03-05 | 2010-05-28 | 한화케미칼 주식회사 | 수소 저장 물질로서 유기-전이 금속 하이드라이드의 개선된제조 방법 |
| CN102046838A (zh) | 2008-05-29 | 2011-05-04 | 乔治洛德方法研究和开发液化空气有限公司 | 用于膜沉积的碲前体 |
| US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
| US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
| US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
| KR100984718B1 (ko) * | 2008-08-11 | 2010-10-01 | 한화케미칼 주식회사 | 수소 저장물질로써 아릴 또는 알킬을 포함하는 유기-전이 금속 하이드라이드의 보다 개선된 제조방법 |
| JP5547418B2 (ja) * | 2009-03-19 | 2014-07-16 | 株式会社Adeka | 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法 |
| JP2011054935A (ja) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | ドーピング方法 |
| JP2011009479A (ja) * | 2009-06-26 | 2011-01-13 | Gas-Phase Growth Ltd | 膜形成材料、膜形成方法、及び素子 |
| KR101805211B1 (ko) | 2009-09-02 | 2017-12-05 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 게르마늄 함유 막 침착을 위한 디할라이드 게르마늄(ⅱ) 전구체 |
| WO2011095849A1 (en) | 2010-02-03 | 2011-08-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
| US20120277457A1 (en) * | 2010-10-12 | 2012-11-01 | Air Products And Chemicals, Inc. | Aminosilanes and methods for making same |
| CN107675250B (zh) * | 2011-03-28 | 2020-08-07 | 应用材料公司 | 选择性沉积外延锗合金应力源的方法与设备 |
| JP5785325B2 (ja) * | 2011-06-03 | 2015-09-30 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 炭素ドープケイ素含有膜を堆積するための組成物及び方法 |
| JP6007662B2 (ja) | 2011-09-05 | 2016-10-12 | 東ソー株式会社 | 成膜材料、それを用いた封止膜、及びその用途 |
| US8993072B2 (en) | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| JP2012142586A (ja) * | 2012-02-20 | 2012-07-26 | Gas-Phase Growth Ltd | 膜形成材料および膜形成方法 |
| JP5780981B2 (ja) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | ゲルマニウム薄膜の成膜方法 |
| WO2013151623A2 (en) * | 2012-04-05 | 2013-10-10 | Dow Corning Corporation | A method for preparing an organofunctional compound |
| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
| US9920077B2 (en) * | 2013-09-27 | 2018-03-20 | L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof |
| KR101720017B1 (ko) * | 2014-01-08 | 2017-03-27 | (주)디엔에프 | 신규한 트리실릴아민 유도체, 이의 제조방법 및 이를 이용한 실리콘 함유 박막 |
| KR101659610B1 (ko) * | 2014-03-18 | 2016-09-23 | 주식회사 유진테크 머티리얼즈 | 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법 |
| US10464953B2 (en) * | 2016-10-14 | 2019-11-05 | Versum Materials Us, Llc | Carbon bridged aminosilane compounds for high growth rate silicon-containing films |
| EP3413334B1 (de) * | 2017-06-01 | 2020-09-09 | Evonik Operations GmbH | Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung |
| KR102364476B1 (ko) * | 2020-05-08 | 2022-02-18 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
| WO2022020705A1 (en) * | 2020-07-24 | 2022-01-27 | Versum Materials Us, Llc | Compositions and methods using same for germanium seed layer |
| EP4398885A1 (en) * | 2021-09-10 | 2024-07-17 | Regents of the University of Michigan | Gas-assisted cocrystal de-sublimation |
| JP2025526829A (ja) | 2022-08-12 | 2025-08-15 | ジェレスト, インコーポレイテッド | 不飽和置換基を含有する高純度スズ化合物及びそれを調製する方法 |
| KR20250073631A (ko) | 2022-10-04 | 2025-05-27 | 젤리스트 인코퍼레이티드 | 고리형 아자스탄난 및 고리형 옥소스탄난 화합물과 이의 제조 방법 |
| TW202530237A (zh) | 2023-09-13 | 2025-08-01 | 德商馬克專利公司 | 具有改良熱及光穩定性之分子內穩定化單烷基金屬化合物及其用途 |
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- 2004-04-01 EP EP04251948A patent/EP1464724B1/en not_active Expired - Lifetime
- 2004-04-01 DE DE602004018219T patent/DE602004018219D1/de not_active Expired - Lifetime
- 2004-04-01 DE DE602004030058T patent/DE602004030058D1/de not_active Expired - Lifetime
- 2004-04-01 EP EP08163178A patent/EP1990345B1/en not_active Expired - Lifetime
- 2004-04-02 US US10/817,618 patent/US7413776B2/en active Active
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- 2004-04-02 SG SG200401872A patent/SG126757A1/en unknown
- 2004-04-05 CN CNB2004100552677A patent/CN100516289C/zh not_active Expired - Fee Related
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8525244B2 (en) | 2006-07-13 | 2013-09-03 | Samsung Electronics Co., Ltd. | Germanium compound, semiconductor device fabricated using the same, and methods of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE602004030058D1 (de) | 2010-12-23 |
| CN100516289C (zh) | 2009-07-22 |
| KR101200524B1 (ko) | 2012-11-13 |
| US7767840B2 (en) | 2010-08-03 |
| JP2004308007A (ja) | 2004-11-04 |
| EP1990345A1 (en) | 2008-11-12 |
| EP1990345B1 (en) | 2010-11-10 |
| SG126757A1 (en) | 2006-11-29 |
| JP5460501B2 (ja) | 2014-04-02 |
| KR20040086811A (ko) | 2004-10-12 |
| CN1584108A (zh) | 2005-02-23 |
| JP4954448B2 (ja) | 2012-06-13 |
| EP1464724A2 (en) | 2004-10-06 |
| US7413776B2 (en) | 2008-08-19 |
| EP1464724A3 (en) | 2007-01-10 |
| EP1464724B1 (en) | 2008-12-10 |
| KR20110091491A (ko) | 2011-08-11 |
| US20040194703A1 (en) | 2004-10-07 |
| DE602004018219D1 (de) | 2009-01-22 |
| JP2010235633A (ja) | 2010-10-21 |
| TW200424243A (en) | 2004-11-16 |
| US20090156852A1 (en) | 2009-06-18 |
| KR101059732B1 (ko) | 2011-08-26 |
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