TWI313943B - Light emitting chip package and manufacturing thereof - Google Patents

Light emitting chip package and manufacturing thereof Download PDF

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Publication number
TWI313943B
TWI313943B TW095139151A TW95139151A TWI313943B TW I313943 B TWI313943 B TW I313943B TW 095139151 A TW095139151 A TW 095139151A TW 95139151 A TW95139151 A TW 95139151A TW I313943 B TWI313943 B TW I313943B
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Taiwan
Prior art keywords
layer
chip package
light emitting
illuminating
emitting chip
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TW095139151A
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English (en)
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TW200820462A (en
Inventor
Yu Tang Pan
Shih Wen Chou
Men Shew Liu
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Chipmos Technologies Inc
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Priority to TW095139151A priority Critical patent/TWI313943B/zh
Priority to US11/762,067 priority patent/US7510889B2/en
Publication of TW200820462A publication Critical patent/TW200820462A/zh
Application granted granted Critical
Publication of TWI313943B publication Critical patent/TWI313943B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
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    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Description

1313943 ID-9508004 21807twf.doc/t • 九、發明說明： 【發明所屬之技術領域] 本發明疋有關於一種光源模組，且特別是有關於一種 採用發光晶片封裝體的光源模組。 【先前技術】 近年來，利用含氮化鎵的化合物半導體，如I化鎵 (GaN)、氮化鋁鎵（AlGaN)、氮化銦鎵（InGaN)等的 ► 發光二極體（light emitting diode, LED)元件備受矚目。三 族氮化物為-寬頻帶能隙之材料，其發光波長可以從紫外 光一直涵蓋至紅光，因此可說是幾乎涵蓋整個可見光的波 段。此外，相較於傳統燈泡，發光二極體具有絕對的優勢， 例如體積小、壽命長、低電壓/電流驅動、不易破裂、不含 水銀（沒有污染問題）以及發光效率佳（省電）等特性， 因此發光二極體在產業上的應用非常廣泛。 由於發光二極體的發光現象不屬於熱發光或放電發 ，光’而是屬^冷性發光’所以發光二極體裝置在散熱良好 的情況下’壽命可長達十萬小時以上，且無須暖燈時間 (idling time)。此外，發光二極體裝置具有反應速度快（約 為10秒）、體積小、用電省、污染低（不含水銀）、高 可靠度、適合量產等優點，因此其應用的領域十分廣泛。 因此，發光一極體被視為21世紀最重要的光源。 然而，由於發光二極體運作時會產生大量的熱能，且 發光二極體的焭度及壽命都會受到溫度的影響，因此當發 光一極體的功率增加時，散熱的需求也就逐漸增加。習知 1313943 ID-9508004 21807twf.doc/t 技術是使賴_散熱_，誠娜 成體積過切及成本增加#_。 …以也會造 【發明内容】 有鑑於此’本發明之目的是提供一種發 的製造方法’卩製造具有較紐料命的發光封^ 此外，本發明之目的是提供一種封装體。 提高散熱效率。紐μ料裝體，以 事體^達是ΐ=的，本發明提出—種發光晶片封 =的找方法，其包括下列步驟。錢，接合—圖幸化 金屬板與-基材，而圖案化金屬板包括至少—散盘夕 =點’其中散熱板位於接點之間。接合—_線= 圖案化金屬板。形成多條導線，以連接薄膜線路層與▲點 在基材上形成—第"'封膠，以覆蓋圖案化金屬板、 薄膜線ί層。在第一封膠所暴露之薄膜線路層 - >一發光晶片，而發光晶片具有多個凸塊，且發 光晶片經由這些凸塊與薄膜線路層連接。進行—切^ 製程’以形成至少—發光晶片封魏。最後再移除該基材。。 在本發明之-實施例中，在配置發光晶片之後， 晶片封裝體的製造方法更包括形成_底膠，以包覆該^凸 塊。 在本發明之-實施例中，在形成底膠之後，發光晶片 封裝體的製造方法更包括在第-_所暴露之薄膜線路層 上形成一第二封膠，以包覆發光晶片。 在本發明之-實施例中，在配置發光晶片之後，發光 1313943 ID-9508004 21807twf.doc/t 晶片封裝體的製造方法更包括在該第一封膠所暴露之薄膜 線路層上形成一第二封膠，以包覆發光晶片。 、' 在本發明之-實施例中’接合圖案化金屬板與 步驟包括接合-金屬板與基材。對於金屬板進行二^ 製程，以形成圖案化金屬板。 Θ木1 在本發@之—貫補+’接合薄縣路 屬板之步驟包括在散熱板上形成一—α东化孟 層接合薄膜線路層與圖案化金^板/緣，層。猎由絕緣膠
=::施例中，基村可以是 為達上述或疋其他目的，太 F 裝體，其包括-散熱板、多個;月\出一種發光晶片封 導線、-第-封膠與至少 ^、一缚膜線路層、多條 置於散熱板外侧。薄膜線闕配中’這些接點配 板電性絕緣。這些導線連』於散熱板上，並與散熱 封膠配置於散熱板上方，並層與接點之間。第-路層，且第一封膠具有—開線、接點與部分薄膜線 發光晶片配置於開口所暴二二二暴露出部分薄膜線路層。 具有多個凸塊，且發光騎路層上，而發光晶片 接。 aa㉖由凸塊與_祕層電性連 在本發明之— 在本發明之一實施例中， 屬層與配置於圖案化金屬 4馭線路層包括一圖案化金 ，- 9上之一銲罩層。 膠，其配置於發光^ ^光W封频更包括一居 而發光晶片具有—主動表面鱼，=層之間，以包覆凸塊， 置於主 一、~'背面，其中凸塊配 1313943 ID-950S004 21807twf.doc/t 動表面上，且底膠並暴露出發光晶片的背面。 一在本發明之一貫施例中，發光晶片封裝體更包括一第 =封膠，其配置於開口内，以包覆發光晶片與底膠。此外， 弟一封膠摻有螢光粉。 在本發明之一實施例中 二封膠，其配置於開口内， 封膠摻有螢光粉。 ’發光晶片封裝體更包括一第 以包覆發光晶片。此外，第一
’發光晶片封裝體更包括一絕 層與散熱板之間。此外，絕緣 政熱板與接點為共平面，並 在本發明之一實施例中 緣膠層，其配置於薄膜線路 膠層具有導熱特性。 在本發明之一實施例中 由相同材質所構成。 緣切Ϊ本發明之一實施例中，第一封膠的邊緣與接點的邊 在本♦明之一實施例中，開口的官庐自每η 遠離薄膜線路層的扣補增加。^度自4輯路層往 有機Γ實施例中’發光晶片_光二極體或 以承ΐ發光晶片由日f將薄膜線路層與金屬板接合， 的散熱效钱較長的使^縣體具有較佳 易懂為二特徵和優點能更明顯 明如下。 ' 5所附圖式，作詳細說 1313943 ID-9508004 21807twf.doc/t * ^ 【實施方式】 圖1A至圖1H是依照本發明之一實施例之一種發光 晶片封裝體的製造方法的剖面示意圖。請參考圖，首 先，提供一金屬板110與一基材210，而基材21〇可以是 _ —可移除之暫時性承載體，例如是捲帶或是其他易與金^ 板110分離的薄膜。此外，金屬板110的材質可以是鋼、 链、或其他具有高熱傳導係數的金屬。然後，接合金屬板 ® 110與基材210,而金屬板110與基材210例如藉由—膠層 (未纟會示）接合。 請參考圖1B，對於金屬板11〇進行一圖案化製程， 以开>成圖案化金屬板ll〇a。此圖案化金屬板11〇a包括多 個散熱板112與多個接點114,其中這些散熱板112位二 接點114之間。然而，本實施例並不限定散熱板112與接 . 點的數量。舉例而言，本實施例的散熱板112的數量 可以疋1。此外，圖案化製程包括微影製程與蝕刻製程。 • 雖然本實施例揭露圖案化金屬板ll〇a的形成方式乃是先 . 接合金屬板U0與基材210，然後才形成圖案化金屬板 = 〇a'然而，在另一實施例中，也可以直接提供一圖案化 孟屬板110a ’並接合圖案化金屬板11〇a與基材21〇。 請參考® 1C’提供—賴線路層12Q，並接合此 、路層120與圖案化金屬板110a。在本實施例中，薄膜線 =120包括一圖案化金屬層122與配置於圖案化金屬層 上之銲罩層丨24。然而，本實施例並不限定薄膜線 曰U〇具有單層線路，而薄膜線路層120也可以是具有多 1313943 ID-9508004 21807twf.doc/t 層線路。此外’當薄膜線路層12〇的最底層為金屬層時， 接合薄膜線路層120與圖案化金屬板11〇&的步驟包括在散 熱板112上形成一絕緣膠層13〇。然後，藉由絕緣膠層13〇 接合薄膜線路層120與圖案化金屬板11〇a。再者，當薄膜 線路層120的最底層為介電層時，薄膜線路層ι2〇也可以 經由絕緣膠層130或直接與圖案化金屬板11〇a接合。 «月參考圖1D ’進行一打線製程（ wire bonding
process)，以形成多條導線14〇，而這些導線i4〇連接薄 膜線路層120與接點114之間。此外，導線14〇的材質可 以是金、銅或其他金屬。 、月乡考囷1E進行一封膠製程（m〇iding process), 材210上形成一第—封膠150，而第一封膠15〇覆 二了 =金屬板11Qa、導線14G與部分薄膜線路層120及 意的是，第-封膠150的開口 -需暴 晶片120，以便於在隨後的製程中配置發光 也可以在門处後）。此外，在形成第一封膠150之後， 也了以在開口 l5〇a 反射層（未繪示） 瘵鍍-耘形成-金屬 請參相1F，在封膠150的反射率。 m上配置多個150戶斤暴露之薄膜線路層 動表面⑽a、—北ϋ60’而各發光晶片⑽具有-主 配置於主動表面二 與/個凸塊162，其中凸塊162 塊162盥薄膜線且這些發光晶片160經由這些凸 /w寻犋線路層12〇電性連接。 請參考圖1G，為了 f破仅几& 马了更確保凸塊162與薄膜線路層12〇 f- .... ! »·«·.. f --g 11 1313943 ID-9508004 21807twf.doc/t •之間電性連接，在配置發光晶片160之後，也可以形成-底膠170，以包覆凸塊162，且底膠17〇可以暴露出發光晶 片1/0的背面160b。此外，在形成底膠17〇之後，也可以 在第一封膠150所暴露之薄膜線路層12〇上形成一第二封 膠⑽，以包覆發光晶片160。或者，在配置發光晶片16〇 之後，直接形成第二封膠180而不形成底膠丨7〇。 請參考圖1H，對於上述製程所形成的結構體，進行 •—切割製程，以形成多個發光晶片封裝體100。然後，移 除基材210。至此，大致完成發光晶片封裝體1〇〇的製造 流程。值得注意的是，在配置發光晶片16〇之後，也可以 直接進行切割製程。或者，在形成底膠17〇之後，進行切 割製程。在配置發光晶片16〇與直接形成第二封膠18〇之 後，進行切割製程。此外，有關於此發光晶片封裝體1〇〇 - 的結構將詳述如後。 圖2依照本發明之一實施例之一種發光晶片封裝體的 φ 剖面圖。請參考圖2，本實施例的發光晶片封裝體10〇包 括一散熱板112、多個接點114、一薄膜線路層120、多條 ' 導線140、第一封膠150與至少一發光晶片160。其中，這 些接點114配置於散熱板112外側。在本實施例中，由於 散熱板112與接點114由同一個金屬板所形成，因此散熱 板112與接點Π4為共平面，並由相同材質所構成。然而， 在另一實施例中，散熱板112與接點114之間也可以具有 一高度差。此外，在另一實施例中，散熱板112與接點114 更可以由不同材質構成。 (.S ). 12 1313943 ID-9508004 21807twf.doc/t 薄膜線路層120配置於散熱板Π4上，並與散熱板i 14 電性絕緣。在本實施例中，薄膜線路層12()包括一圖案化 孟屬層122與配置於圖案化金屬層122上之一銲罩層 124。然而，本實施例並不限定薄膜線路層120具有單層線 路，而薄膜線路層120也可以是具有多層線路。 此外，當薄膜線路層120的最底層為金屬層時，發光 曰曰片封裝體100更包括一絕緣勝層13〇 ,其配置於薄膜線 馨 路層120與散熱板H2之間。然而，當薄膜線路層12〇的 _ 最底層為介電層時，薄膜線路層120也可以經由絕緣膠層 130或直接與散熱板112接合。另外，絕緣膠層也可 以具有導熱特性，以利傳導發光晶片160所產生的熱量。 請繼續參考圖2，這些導線14〇連接薄膜線路層12〇 與接點114。此外，第一封膠150配置於散熱板112上方， 並覆盍導線140、接點114與部分薄膜線路層12〇。第一封 膠150具有一開口 150a，暴露出部分薄膜線路層。在 • 本實施例中，為了提高對於發光晶片160所發出的光線的 使用率，開口 150a的寬度自薄膜線路層12〇往遠離薄膜線 路層120的方向逐漸增加，以便於反射發光晶片16〇所發 出的光線。另外，在開口 15〇a的内壁上也可以形成一金^ 反射層（未繪示），以提高反射率。再者，由於第一封膠 150與接點114經過切割，因此第一封膠15〇的邊緣與接 點Π 4的邊緣切齊。 發光晶片160配置於開口 i50a所暴露的薄膜線路層 120上，而發光晶片160具有一主動表面16〇a、_背面16此 13 1313943 ID-9508004 21807twf.doc/t 與多個凸塊162。其中凸塊162配置於主動表面·a上， 且叙光晶片藉由凸塊162與薄膜線路層12〇電性連接。更 詳細而言，凸塊162與薄膜線路層12〇的圖案化金屬層122 電性連接。值得注意的是，雖然本實施例的發光晶片封裝 體100僅具有單一發光晶片160，然而在另一實施例中， 發光晶片封裝體100也可以包含多個發光晶片16〇。此外， 發光晶片160包括發光二極體或有機發光二極體。 發光晶片封裝體100也可以包括一底膠17〇及/或一第 -封膠180，其中底膠170配置於發光晶片16〇與薄膜線 路層120之間，以包覆凸塊162，並暴露出發光晶片16〇 的背面160b。再者，第二封膠18〇其配置於開口 15此内， 以包覆發光晶片160與底膠17〇。此外，第二封膠wo為 透明材質，H1此發光晶片160所發出的光線能夠穿透第二 封膠180。 值得注意的是，第二封膠18〇也可以摻雜有螢光粉。 綜上所述，本發明的發光晶片封裝體及其製造方法至 少具有下列優點： 一、 本發明將薄膜線路層與具有高熱傳導性的基板接 合，因此發光晶片運作時所產生的熱能藉由極短的路徑傳 至外界，以提尚發光晶片的使用壽命與發光效率。 二、 本發明的發光晶片封裝體的接點位於底部或側 面，因此此發光晶片封裝體可以以表面黏著技術（SMT) 或插拔方式與其他電子裝置組裝。 三、 若選用適當材質的第二封膠與銲罩層，則發光晶 .·· <»·- ί «·"»_ ! 、· 14 1313943 ID-9508004 21807twf.d〇c/t 月所淼出的光線被吸收的比例將會下降。 四、由於發光晶片以覆晶接合方式與 2接，因此發光晶片所發出的光線較不易受其== —雖然本發明已以較佳實施例揭露如上^其並 限疋本發明’任何熟習此技藝者，在不脫 和範圍内’當可作些許之更動與潤飾，因此本發日 範圍當視後附之申請專利範圍所界定者為準。之保;又 【圖式簡單說明】 圖1A至圖1H是依照本發明之一實施 晶片封裝體的製造方法的勤示♦圖。 種發先 圖2依照本發明之—實施 剖面圖。 K齡九曰曰片封裝體的 【主要元件符號說明】 100 .發光晶片封裝體 110 :金屬板 ll〇a :圖案化金屬板 112 ·散熱板 114 :接點 120 :薄膜線路層 122 :圖案化金屬層 124 :銲罩層 130 :絕緣膠層 140 :導線 15 1313943
ID-9508004 21807twf.doc/t 150 ： 第一封膠 150a :開口 160 ： 發光晶片 160a :主動表面 160b :背面 162 ： 凸塊 170 ： 底膠 180 ： 第二封膠 210 ： 基材

Claims (1)

1313943 ID-9508004 21807twf.doc/t 十、申請專利範園： 路層:該圖案化金屬板； 在該基材上形，膜線路層與該些接點； 屬板二該些導“以覆蓋該圖案化金 個發光薄齡路層上配置至少-經由該些凸塊與多個凸塊，且該發光晶片 進―IU 層電性連接； 及 、王以形成至少一發光晶片封裝體；以 、移除該基材。 造方法，1項所述之發光晶#封裝體的製 以包覆該些凸塊。d亥务光晶片之後，更包括形成一底谬， 3·如申請鼻划〜 造方法，其中Ι ί圍第2項所述之發光晶片封裝體的製 暴露之該驾圯成該底膠之後，更包括在該第一封膠所 片。雜線路層上形成-第二封膠，以包覆該發光晶 4.如申全眚衷^ ^ 造方法，其H钝圍第1項所述之發光晶片封裝體的製 "在配置該發光晶片之後，更包括在該第一封 17 1313943 ^-9508004 21807twf.doc/t ，所暴露之該薄膜線路層上形成—第二封膠，以包覆 光晶片。 5·如φ請專利範圍第丨項所述之發光^封裝體的製 乂方法，其中接合該圖案化金屬板與該基材包括： 接合一金屬板與該基材；以及 屬板對於該金屬板進行―圖案化製程，以形成該圖案化金
造方H請專魏㈣丨酬述之發光晶片封裝體的製 ^其中接合該薄膜線路層與該圖案化金屬板包括： ，該些散熱板上形成一絕緣膠層；以及 板。1由軌_層接合㈣縣路層與該圖案化金屬 迅之發光晶片封裝體的 、、·那曱請專利範图弟1項所 乂方去，其中該基材包括捲帶。 8·種發光晶片封襞體，包括： ''散熱板； ^固接點，配置於該散熱板外侧； 性絕緣厂、線路層配置於該散熱板上，並與該散熱板 連接該薄膜線路層與該些接點； 線、該些於錄版U，並覆蓋該些 開口，A= 溥膜線路層，而該第-封膠1右 暴路出部分該薄模線路層；叹 得具有' 至少一發光晶片，配置於該 所恭路的该mm線越 18 1313943 ID-9508004 21807twf.doc/t 層上，而該發光晶片具有多個凸塊，且該發光晶片藉由該 些凸塊與該薄膜線路層電性連接。 9. 如申請專利範圍第8項所述之發光晶片封裝體，其 中該薄膜線路層包括一圖案化金屬層與配置於該圖案化金 屬層上之一銲罩層。 10. 如申請專利範圍第8項所述之發光晶片封裝體，更 包括一底膠，配置於該發光晶片與該薄膜線路層之間，以 包覆該些凸塊，而該發光晶片具有一主動表面與一背面， 其中該些凸塊配置於該主動表面上，且該底膠暴露出該背 面。 11. 如申請專利範圍第10項所述之發光晶片封裝體， 更包括一第二封膠，配置於該開口内，以包覆該發光晶片 與該底膠。 12. 如申請專利範圍第11項所述之發光晶片封裝體， 其中該第二封膠摻有螢光粉。 13. 如申請專利範圍第8項所述之發光晶片封裝體，更 包括一第二封膠，配置於該開口内，以包覆該發光晶片。 14. 如申請專利範圍第13項所述之發光晶片封裝體， 其中該第二封膠摻有螢光粉。 15. 如申請專利範圍第8項所述之發光晶片封裝體，更 包括一絕緣膠層，配置於該薄膜線路層與該散熱板之間。 16. 如申請專利範圍第15項所述之發光晶片封裝體， 其中該絕緣膠層具有導熱特性。 17. 如申請專利範圍第8項所述之發光晶片封裝體，其 19 1313943 ID-9508004 21807twf.doc/t 中該散熱板與該些接點為共平面，並由相同材質所構成。 18. 如申請專利範圍第8項所述之發光晶片封裝體，其 中該第一封膠的邊緣與該些接點的邊緣切齊。 19. 如申請專利範圍第8項所述之發光晶片封裝體，其 中該開口的寬度自該薄膜線路層往遠離該薄膜線路層的方 向逐漸增加。 20. 如申請專利範圍第8項所述之發光晶片封裝體，其 中該發光晶片包括發光二極體或有機發光二極體。
20
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