TWI387139B - An optical semiconductor device, and an optical semiconductor device - Google Patents

An optical semiconductor device, and an optical semiconductor device Download PDF

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Publication number
TWI387139B
TWI387139B TW096137885A TW96137885A TWI387139B TW I387139 B TWI387139 B TW I387139B TW 096137885 A TW096137885 A TW 096137885A TW 96137885 A TW96137885 A TW 96137885A TW I387139 B TWI387139 B TW I387139B
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Taiwan
Prior art keywords
optical semiconductor
electrode
semiconductor element
lead portion
semiconductor device
Prior art date
Application number
TW096137885A
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English (en)
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TW200832756A (en
Inventor
Kazuo Shimokawa
Yasunari Ukita
Original Assignee
Toshiba Kk
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Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200832756A publication Critical patent/TW200832756A/zh
Application granted granted Critical
Publication of TWI387139B publication Critical patent/TWI387139B/zh

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description

光半導體裝置及光半導體裝置之製造方法
本發明係關於一種具備光半導體元件之光半導體裝置及該光半導體裝置之製造方法。
光半導體裝置作為照明或顯示裝置等各種裝置之光源被用於廣泛領域。此光半導體裝置具備有發光二極體(LED)等光半導體元件、接合載置此光半導體元件並電性連接於光半導體元件之第1引線部、及經由導線電性連接於此第1引線部上之光半導體元件的第2引線部(例如參照專利文獻1及專利文獻2)。向此等第1引線部及第2引線部施加電壓，向光半導體元件供給電力。
於光半導體元件之第1主面設有發光層，並於此發光層上設有較第1主面更小之第1電極。此第1電極藉由焊料等接合構材與第1引線部接合，光半導體元件設於第1引線部之載置面上。此外，於第1主面之相反面的第2主面設有導線連接用之第2電極。再者，光半導體元件藉由模塑樹脂密封。
於此種光半導體裝置中，因第1引線部藉由沖壓加工等形成，故第1引線部之載置面的平面度低。因此，為進行使焊料等接合構材於光半導體元件與第1引線部之載置面之間良好填充之接合，而必須增厚藉由接合構材形成之接合層的厚度，或除焊料等接合構材之外，還須供給焊料片等副材料。
[專利文獻1]日本專利特開2006-156538號公報
[專利文獻2]日本專利特開2006-66670號公報
然而，因第1引線部之載置面的平面度於每個光半導體裝置產生偏差，且接合材料之供給量係配合平面度低之載置面而設定，故於載置面之平面度高之情形，剩餘部分之接合材料自光半導體元件與第1引線部之載置面之間露出，並蠕升至光半導體元件之側壁上。因光半導體元件藉由發光層而分為正極和負極，故接合材料接觸光半導體元件之側壁時，會產生短路不良。
本發明係鑒於上述而完成者，其目的在於提供一種可防止因接合材料對光半導體元件蠕升而產生短路不良之光半導體裝置及該光半導體裝置之製造方法。
本發明實施形態相關之第1特徵，係於光半導體裝置中，包括光半導體元件，其具有設於第1主面上之發光層、設於發光層上並較第1主面更小之第1電極、及設於與第1主面不同之第2主面上的第2電極；第1引線部，其具有接合第1電極之區域並較第1主面更小之接合區域、及形成於鄰接於接合區域之外周區域的第1溝部，藉由接合構材將第1電極與接合區域接合，並電性連接於第1電極；及第2引線部，其藉由連接構材電性連接於第2電極。
本發明實施形態相關之第2特徵，係於光半導體裝置之 製造方法中，包括以下步驟：於設有具有設於第1主面上之發光層、設於發光層上並較第1主面更小之第1電極、及設於與第1主面不同之第2主面上的第2電極之光半導體元件的第1引線部接合第1電極的區域並鄰接於較第1主面更小之接合區域之外周區域形成第1溝部；藉由接合構材將第1電極與接合區域接合，於第1引線部上設置光半導體元件，並將第1引線部電性連接於第1電極；及藉由連接構材將第2引線部電性連接於第1引線部上之光半導體元件的第2電極。
若藉由本發明，則可防止因接合構材對光半導體元件蠕升而產生短路不良。
 (第1實施形態)
參照圖1至圖5，就本發明之第1實施形態進行說明。
如圖1所示，本發明第1實施形態相關之光半導體裝置1A具備有放射光之光半導體元件2、經由接合構材3載置此光半導體元件2並電性連接於此光半導體元件2之第1引線部4、藉由連接構材5電性連接於此第1引線部4上之光半導體元件2的第2引線部6、為覆蓋第1引線部4及第2引線部6之模塑構件的基體7、及密封光半導體元件2之透光性構件8。
光半導體元件2如圖2所示，具備有成為基體之導電性基材2a、設於此導電性基材2a之第1主面M1上之n型半導體層 2b、設於此n型半導體層2b上之發光層2c、設於此發光層2c上之p型半導體層2d、設於此p型半導體層2d上且較第1主面M1更小之第1電極2e、具有絕緣性並覆蓋半導體層2b、2d及發光層2c之周圍的保護膜(鈍化膜)2f、及設於第1主面M1相反面的第2主面M2上之第2電極2g。作為此光半導體元件2，例如使用發光二極體(LED)等。
第1引線部4及第2引線部6係用以向光半導體元件2供給電力之一對引線端子。向此等第1引線部4及第2引線部6施加電壓，從而向光半導體元件2供給電力。藉此，光半導體元件2自n型半導體層2b與p型半導體層2d所挾持之發光層2c放射光。
第1引線部4如圖1、圖2及圖3所示，具有收納光半導體元件2之凹部4a、接合光半導體元件2之第1電極2e的區域並較第1主面M1更小之接合區域R1、及形成於鄰接於接合區域R1之外周區域R2的第1溝部4b。凹部4a例如形成為杯形，即倒截錐形狀。
接合區域R1係於凹部4a之底面設為例如正方形狀之表面區域。此接合區域R1之面積較光半導體元件2之第1主面M1的面積更小，較第1電極2e之接合面M3的面積更大。外周區域R2係以包圍接合區域R1之方式設於凹部4a之底面的表面區域。此外周區域R2之面積係自凹部4a之底面面積減去接合區域R1之面積而得的面積。此外，第1溝部4b係複數溝G1遍及外周區域R2，形成為例如格子狀之溝G1的集合體。
此處，光半導體元件2其第1電極2e係藉由例如焊料等接合構材3與第1引線部4之接合區域R1接合，設於第1引線部4上，並電性連接於第1引線部4。再者，作為接合構材3，例如使用AuSn共晶焊料等。此外，光半導體元件2其第2電極2g藉由例如金導線等連接構材5電性連接於第2引線部6。
再者，光半導體元件2之尺寸係1.0×1.0×0.2(高度)mm3 。此光半導體元件2之發光層2c的面積為0.9×0.9 mm2 ，第2電極2g之面積為0.8×0.8 mm2 。此外，第1引線部4之凹部4a開口直徑為2.5 mm，圓型之底面直徑為2.0 mm，深度為0.5 mm。接合區域R1之面積為0.9×0.9 mm2 。第1溝部4b之溝G1例如於正交之2方向以0.06 mm間距配置。溝G1之形狀例如係深度為0.01 mm，寬度為0.01 mm之V字形狀。
基體7係具有將由光半導體元件2放射之光向外部反射之反射面7a，並覆蓋第1引線部4及第2引線部6之模塑構件。反射面7a以自內部向外部擴大之方式傾斜。此種基體7例如藉由白色之模塑樹脂形成。作為模塑樹脂，例如使用聚醯胺系樹脂等熱可塑性樹脂。
透光性構件8係設於第1引線部4之凹部4a內及基體7上並密封光半導體元件2之構件。此透光性構件8具有用以放出自光半導體元件2放射之光的放出面8a。此放出面8a係與外部環境相接之露出面，並起作用作為放出由光半導體元件2放射之光的光取出面。
此透光性構件8例如藉由混合有粒子狀螢光體之螢光體 混合樹脂等透光性樹脂材料形成。作為透光性樹脂材料，例如使用矽樹脂等。此處，螢光體係變換由光半導體元件2放射之光的波長之物質，例如放出具有較光半導體元件2之光的波長更長的波長之光。作為此螢光體，例如使用放出黃色光之螢光體，或使用放出黃色光之螢光體及放出紅色光之螢光體雙方。
於此種光半導體裝置1A中，若對第1引線部4及第2引線部6施加電壓，對光半導體元件2供給電力，則光半導體元件2放射光。此光之一部分通過透光性構件8並保持原狀地自放出面8a放出，其他部分藉由第1引線部4之凹部4a的側壁或基體7之反射面7a反射而自放出面8a放出。此外，光之一部分入射至透光性構件8所含有之螢光體。藉此，螢光體受激勵而放射光。此光之一部分亦通過透光性構件8並自放出面8a放出，其他部分亦藉由第1引線部4之凹部4a的側壁或基體7之反射面7a反射而自放出面8a放出。如此，藉由光半導體元件2放射之光與藉由以此光激勵之螢光體放射之光混合，並自透光性構件8之放出面8a放出。
其次，就光半導體裝置1A之製造方法進行說明。
於光半導體裝置1A之製造步驟中，首先形成第1引線部4及第2引線部6，如圖4所示，於第1引線部4之鄰接於接合區域R1的外周區域R2上形成第1溝部4b。其後，避開第1引線部4之凹部4a並以覆蓋第1引線部4及第2引線部6之方式形成基體7，如圖5所示，將光半導體元件2之電極2e與接合區域R1接合，將光半導體元件2設於第1引線部4上， 並藉由連接構材5將此第1引線部4上之半導體元件2的第2電極2g與第2引線部6電性連接，最後藉由透光性構件8密封光半導體元件2。
詳述之，首先藉由冲孔加工由板金構件形成第1引線部4及第2引線部6。其後，藉由沖壓加工形成第1引線部4之凹部4a，並如圖4所示，於此凹部4a之底面的外周區域R2加工溝G1，藉此於外周區域R2形成第1溝部4b，並為獲得高的平面度而沖壓凹部4a之底面。藉此，第1溝部4b形成於凹部4a底面之鄰接於接合區域R1的外周區域R2。此時，接合區域R1設置得較光半導體元件2之第1電極2e的接合面M3更大，較光半導體元件2之第1主面M1更小。
其次，於用以將第1引線部4及第2引線部6定位於特定位置並使基體7成形之模具上安裝第1引線部4及第2引線部6，並使用例如注模法，藉由白色模塑樹脂使基體7成形。作為此白色模塑樹脂，例如使用聚鄰苯二甲醯胺等熱可塑性樹脂。
其後，如圖5所示，於第1引線部4之接合區域R1的中央載置焊料片3a。此焊料片3a例如藉由AuSn共晶焊料形成。焊料片3a之尺寸例如係300×300×25(厚度)μm3 。此外，如圖5所示，於對第1引線部4載置光半導體元件2之前，於光半導體元件2之第1電極2e上預先設置焊料膜3b。此焊料膜3b例如藉由AuSn共晶焊料形成。焊料膜3b之厚度例如係2 μm。
藉由此種焊料片3a及焊料膜3b供給接合構材3。即，焊 料片3a與焊料膜3b熔為一體成為接合構材3。特別是焊料片3a對應於平面度低、表面粗糙度高之第1引線部4，用於無間隙地向光半導體元件2與第1引線部4之間填充焊料。因此，供給之焊料量較接合所需之填充量更多。
其次，於N2 (90%)+H2 (10%)之還原環境下，將第1引線部4加熱至較AuSn共晶焊料之熔点(280℃)更高的溫度(例如320℃)，並藉由晶片安裝器(未圖示)將光半導體元件2經由焊料片3a載置(mount)於第1引線部4之接合區域R1上。藉此，光半導體元件2之第1電極2e與第1引線部4之接合區域R1接合，光半導體元件2設置於第1引線部4之凹部4a的底面。
此時，即使於已熔化之焊料自光半導體元件2與第1引線部4之間露出之情形，露出之剩餘部分的焊料亦因毛細管現象而濡濕擴展於第1溝部4b之各個溝G1，不會蠕升至光半導體元件2之側壁。藉此，可於藉由接合構材3將光半導體元件2與第1引線部4接合時，防止焊料對光半導體元件2蠕升。
此處，載置於第1引線部4上之光半導體元件2，藉由施加100 ms期間、0.5N之載荷，於第1引線部4上接合。再者，為確保光半導體元件2之焊料膜3b與焊料片3a的良好接合性，可於加壓後進行擦刷。此擦刷係藉由使載置第1引線部4之筒夾微動而進行。擦刷係以筒夾以四方形之軌跡微動的方式進行。此時，例如四方形之一邊(行程)為200 μm，筒夾的移動速度為100 μm/s。
再者，作為光半導體元件2，例如使用藉由使350 mA之 電流流動而得到451 m之光束的高輸出型光半導體元件2。此光半導體元件2之導電性基材2a例如藉由SiC(碳化矽)形成，發光層2c例如係發光為藍色之發光層。此外，第1引線部4及第2引線部6藉由厚度為1.5 mm之銅板形成。於此等第1引線部4及第2引線部6之表面，以厚度為1 μm的鎳、厚度為1 μm的銀分別電鍍。此外，接合構材3之厚度為2 μm。基體7之尺寸為8.0×5.0×2.5(高度)mm3 。
其後，例如藉由金導線等連接構材5，電性連接光半導體元件2之第2電極2g與第2引線部6。最後，向第1引線部4之凹部4a及由基體7之反射面7a形成之凹部內填充矽樹脂，密封光半導體元件2。藉此，矽樹脂製透光性構件8設於基體7，如圖1所示，光半導體裝置1A完成。
再者，作為矽樹脂，例如使用以5~10 wt%之濃度混入直徑5~20 μm之螢光體的矽樹脂。螢光體例如係(Sr,Ba)2 SiO4 ：Eu2+之組成的SOSE類螢光體，將波長460 nm之藍色光變換為波長570 nm之黃色光。因此，藍色光與黃色光自光半導體裝置1A放射，此等光經混合於視覺上得到白色光。
此處，本實施之形態中，使用焊料片3a，對應於因第1引線部4之載置面平面度或表面粗糙度的偏差而導致之焊料量不足。然而，於可藉由增加焊料膜3b之厚度而供給充分焊料量之情形，無需藉由焊料片3a進行焊料供給。即使於增厚焊料膜3b之情形，自光半導體元件2與第1引線部4之間露出之剩餘部分的焊料也因毛細管現象而濡濕擴展於 第1溝部4b之各個溝G1，不會蠕升至光半導體元件2之側壁。藉此，於藉由接合構材3將光半導體元件2與第1引線部4接合時，可防止焊料對光半導體元件2蠕升。
如以上說明，若藉由本發明之第1實施形態，則因於鄰接於第1引線部4之接合區域R1的外周區域R2形成第1溝部4b，故於藉由接合構材3將光半導體元件2與第1引線部4接合時，自光半導體元件2與第1引線部4之間露出之剩餘部分的接合構材3濡濕擴展於第1溝部4b之各個溝G1，接合構材3不會蠕升至光半導體元件2之側壁。藉此，因可防止接合構材3對光半導體元件2之側壁蠕升，故可防止因接合構材3之蠕升而產生短路不良。特別係接合區域R1雖設置得較光半導體元件2之第1主面M1更小，但於相對於第1主面M1之區域亦形成有各溝G1，故剩餘部分之接合構材3於到達光半導體元件2側壁之前流入各溝G1內。藉此，可確實防止接合構材3蠕升至光半導體元件2之側壁。
再者，因接合區域R1較第1電極2e之接合面M3更大，故於與第1電極2e之接合面M3相對之區域不會形成溝G1，因此可提高光半導體元件2對第1引線部4之接合力。作為其結果，可防止光半導體元件2自第1引線部4脫落，可提高光半導體裝置1A之部件可靠性。
(第2實施形態)
參照圖6及圖7，就本發明之第2實施形態進行說明。本發明之第2實施形態中，就與第1實施形態不同之部分進行說明。再者，於第2實施形態，對與第1實施形態中說明之 部分相同的部分賦予同一符号，並省略其說明(其他實施形態亦相同)。
如圖6及圖7所示，於本發明之第2實施形態中，第1引線部4具有於接合區域R1內與第1溝部4b離開而形成之第2溝部4c。此第2溝部4c設於接合區域R1內，以免各溝G2與第1溝部4b之各溝G1連通。再者，第2溝部4c之面積例如為0.5×0.5 mm2 。
光半導體裝置1A之製造步驟除第1實施形態之製造步驟外，還具有於接合區域R1內與第1溝部4b離開而形成第2溝部4c之步驟。詳述之，於藉由沖壓加工形成第1引線部4之凹部4a後，藉由於此凹部4a之底面的外周區域R2加工溝G1而於外周區域R2形成第1溝部4b，同時，藉由於凹部4a底面之接合區域R1加工溝G2而於接合區域R1內形成第2溝部4c，最後，為得到高平面度而沖壓凹部4a之底面。其後之製造步驟與第1實施形態相同。
如以上說明，若藉由本發明之第2實施形態，則可得到與第1實施形態同樣之效果。再者，因於第1引線部4之接合區域R1內與第1溝部4b離開而形成第2溝部4c，故於供給焊料片3a作為接合構材3之情形，可抑制熔化之焊料片3a濡濕擴展，於足以接合之焊料留存於光半導體元件2與第1引線部4之間，故可抑制光半導體元件2與第1引線部4之接合不良的產生。作為其結果，可防止光半導體元件2自第1引線部4脫落，可提高光半導體裝置1A之部件可靠性。
再者，作為第1溝部4b及第2溝部4c之形成方法，例如可 使用將並列之溝加工用的複數沖頭一次打進凹部4a之底面，其後使之例如旋轉90°並再一次打進凹部4a之底面，同時形成第1溝部4b及第2溝部4c之方法。若為此方法，則與使用排列為格子狀之溝加工用複數沖頭的情形相比，可使各沖頭排列單純化，故可容易地進行工具之維護。再者，可減弱打進沖頭時之力量，除此之外，可防止各溝G1、G2之交差部分壓壞。
(第3實施形態)
參照圖8及圖9，就本發明之第3實施形態進行說明。於本發明之第3實施形態，就與第1實施形態不同之部分進行說明。
如圖8及圖9所示，於本發明第3實施形態相關之光半導體裝置1B中，第1引線部4係不具有凹部4a之平坦框架，第1引線部4之外周區域R2以包圍接合區域R1之方式設為框狀。
如以上說明，若藉由本發明之第3實施形態，則即使是前述之構成，亦可得到與第1實施形態相同之效果。
(其他實施形態)
再者，本發明並未限於前述實施形態，於不脫離其主旨之範圍內可進行各種變更。
例如，於前述之實施形態中，雖列舉有各種數值，但其等數值為例示，並未限定。
此外，於前述之實施形態中，將接合區域R1設為正方形狀，但未限於此，例如亦可設為圓形，其形狀不受限定。 同樣，外周區域R2之形狀亦不受限定。
此外，於前述之實施形態中，雖將接合區域R1設置得較第1電極2e更大，但未限於此，例如亦可設置得較第1電極2e更小。
此外，於前述之實施形態中，雖於正交之2方向形成溝G1作為第1溝部4b，但未限於此，例如亦可於1方向或3方向以上形成溝G1，此外亦可不正交地形成。
此外，於前述之實施形態中，將溝G1形成為V字形狀，但未限於此，例如亦可形成為半圓形狀或四角形狀。
最後，於前述之實施形態中，使用第1主面M1之相反面作為設置第2電極2g之第2主面M2，但未限於此，例如亦可使用導電性基材2a之側壁的一面，使用與第1主面M1不同之面即可。
1A，1B‧‧‧光半導體裝置
2‧‧‧光半導體元件
2c‧‧‧發光層
2e‧‧‧第1電極
2g‧‧‧第2電極
3‧‧‧接合構材
4‧‧‧第1引線部
4b‧‧‧第1溝部
4c‧‧‧第2溝部
5‧‧‧連接構材
6‧‧‧第2引線部
M1‧‧‧第1主面
M2‧‧‧第2主面
M3‧‧‧接合面
R1‧‧‧接合區域
R2‧‧‧外周區域
圖1係本發明第1實施形態相關之光半導體裝置概略構成的截面圖。
圖2係擴大顯示圖1所示之光半導體裝置具備的光半導體元件與第1引線部之接合部分的截面圖。
圖3係顯示圖1所示之光半導體裝置具備之第1引線部及第2引線部的平面圖。
圖4係說明圖1所示之光半導體裝置之製造方法的第1步驟截面圖。
圖5係第2步驟截面圖。
圖6係擴大顯示本發明第2實施形態相關之光半導體裝置 具備之光半導體元件與第1引線部之接合部分的截面圖。
圖7係顯示本發明第2實施形態相關之光半導體裝置具備之第1引線部及第2引線部的平面圖。
圖8係顯示本發明第3實施形態相關之光半導體裝置概略構成的截面圖。
圖9係顯示圖8所示之光半導體裝置具備之第1引線部及第2引線部的平面圖。
2‧‧‧光半導體元件
2a‧‧‧導電性基材
2b‧‧‧n型半導體層
2c‧‧‧發光層
2d‧‧‧p型半導體層
2e‧‧‧第1電極
2f‧‧‧保護膜
2g‧‧‧第2電極
3‧‧‧接合構材
4‧‧‧第1引線部
4b‧‧‧第1溝部
G1‧‧‧溝
M1‧‧‧第1主面
M2‧‧‧第2主面
M3‧‧‧接合面
R1‧‧‧接合區域
R2‧‧‧外周區域

Claims (12)

  1. 一種光半導體裝置，其特徵在於包括：光半導體元件，其具有設於第1主面上之發光層、設於前述發光層上並較前述第1主面小的第1電極、及設於與前述第1主面不同之第2主面上之第2電極；第1引線部，其具有接合前述第1電極並較前述第1主面小且係全面平坦之接合區域、及形成於鄰接於前述接合區域之外周區域的第1溝部，前述第1引線部電性連接於前述第1電極，而前述第1電極係以覆蓋前述接合區域之方式配置並藉由接合構材與前述接合區域接合；及第2引線部，其藉由連接構材電性連接於前述第2電極；且前述第1溝部之至少一部分係形成於光半導體元件的邊界內且接合區域外之外周區域上；前述第1電極較前述接合區域小前述第1溝部內所形成之溝於前述接合區域內並不連通。
  2. 如請求項1之光半導體裝置，其中前述接合區域較前述第1電極之接合面大。
  3. 如請求項1之光半導體裝置，其中前述接合區域沒有溝。
  4. 如請求項1之光半導體裝置，其中前述第1引線部更具有形成於前述接合區域內的第2溝部；且前述光半導體裝置更包含平坦部分，其係配置於前述 第1溝部與前述第2溝部之間的前述第1引線部上。
  5. 如請求項1之光半導體裝置，其中前述第1溝部包含填充有接合構材的材料之溝。
  6. 如請求項1之光半導體裝置，其中前述第1溝部之最內部之溝係全部形成於前述光半導體元件的邊界內。
  7. 一種光半導體裝置之製造方法，其特徵在於包括以下步驟：於鄰接於第1引線部的接合區域之外周區域形成於前述接合區域內並不連通之第1溝部，前述接合區域接合光半導體元件的第1電極，前述光半導體元件配置於第1引線部上且具有：形成於前述光半導體元件之第1主面上之發光層、設於前述發光層上並較前述第1主面小的前述第1電極、及設於與前述第1主面不同之第2主面上之第2電極，前述接合區域較前述第1主面小且係平坦者；以覆蓋前述接合區域之方式將前述第1電極對向配置並藉由接合構材將前述第1電極與前述接合區域接合，將前述光半導體元件與前述第1引線部電性連接；及將前述第1引線部上之前述光半導體元件的前述第2電極與第2引線部藉由連接構材電性連接；且前述第1溝部之至少一部分係形成於光半導體元件的邊界內且接合區域外之外周區域上；前述第1電極較前述接合區域小。
  8. 如請求項7之光半導體裝置之製造方法，其中將前述接 合區域形成得較前述第1電極之接合面大。
  9. 如請求項7之光半導體裝置之製造方法，其中前述接合區域形成為沒有溝。
  10. 如請求項7之光半導體裝置之製造方法，其中在前述接合區域內形成第2溝部，以在前述第1溝部與前述第2溝部之間之前述第1引線部上配置平坦部分。
  11. 如請求項7之光半導體裝置之製造方法，其中前述第1溝部包含填充有接合構材的材料之溝。
  12. 如請求項7之光半導體裝置之製造方法，其中前述第1溝部之最內部之溝係全部形成於前述光半導體元件的邊界內。
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