TWI312548B - - Google Patents
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- Publication number
- TWI312548B TWI312548B TW95105928A TW95105928A TWI312548B TW I312548 B TWI312548 B TW I312548B TW 95105928 A TW95105928 A TW 95105928A TW 95105928 A TW95105928 A TW 95105928A TW I312548 B TWI312548 B TW I312548B
- Authority
- TW
- Taiwan
- Prior art keywords
- plate
- alloy
- joint
- joined
- metal
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 182
- 239000002184 metal Substances 0.000 claims description 182
- 239000000919 ceramic Substances 0.000 claims description 128
- 229910045601 alloy Inorganic materials 0.000 claims description 39
- 239000000956 alloy Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 229910001080 W alloy Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 238000003723 Smelting Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- 206010039740 Screaming Diseases 0.000 claims 1
- 241000276425 Xiphophorus maculatus Species 0.000 claims 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004945 emulsification Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000035882 stress Effects 0.000 description 67
- 229910000679 solder Inorganic materials 0.000 description 31
- 239000007789 gas Substances 0.000 description 19
- 230000005499 meniscus Effects 0.000 description 16
- 238000012360 testing method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000005304 joining Methods 0.000 description 7
- 229910017709 Ni Co Inorganic materials 0.000 description 6
- 229910003267 Ni-Co Inorganic materials 0.000 description 6
- 229910003262 Ni‐Co Inorganic materials 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000994 depressogenic effect Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910017398 Au—Ni Inorganic materials 0.000 description 2
- 229910017313 Mo—Co Inorganic materials 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 2
- 229910008947 W—Co Inorganic materials 0.000 description 2
- 210000001015 abdomen Anatomy 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 101710179734 6,7-dimethyl-8-ribityllumazine synthase 2 Proteins 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101710186609 Lipoyl synthase 2 Proteins 0.000 description 1
- 101710122908 Lipoyl synthase 2, chloroplastic Proteins 0.000 description 1
- 101710101072 Lipoyl synthase 2, mitochondrial Proteins 0.000 description 1
- JEHVHULVYXPDBB-UHFFFAOYSA-N [O-2].[Sr+2].[O-2].[Mg+2] Chemical compound [O-2].[Sr+2].[O-2].[Mg+2] JEHVHULVYXPDBB-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005047787 | 2005-02-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200711030A TW200711030A (en) | 2007-03-16 |
| TWI312548B true TWI312548B (enExample) | 2009-07-21 |
Family
ID=36927368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095105928A TW200711030A (en) | 2005-02-23 | 2006-02-22 | Joined article and member for holding wafer and structure for mounting the same, and method for treating wafer |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8956459B2 (enExample) |
| JP (1) | JP4866836B2 (enExample) |
| TW (1) | TW200711030A (enExample) |
| WO (1) | WO2006090730A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI641541B (zh) * | 2015-10-23 | 2018-11-21 | 日商阿基里斯股份有限公司 | 間隔件 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5222503B2 (ja) * | 2006-11-27 | 2013-06-26 | 日本碍子株式会社 | セラミックス薄板体と金属薄板体とを備えるデバイス |
| US9013682B2 (en) | 2007-06-21 | 2015-04-21 | Asml Netherlands B.V. | Clamping device and object loading method |
| KR101232234B1 (ko) * | 2007-06-21 | 2013-02-12 | 에이에스엠엘 네델란즈 비.브이. | 클램핑 디바이스 및 대상물 로딩 방법 |
| US8446566B2 (en) | 2007-09-04 | 2013-05-21 | Asml Netherlands B.V. | Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method |
| JP2010232532A (ja) * | 2009-03-27 | 2010-10-14 | Sumitomo Electric Ind Ltd | 高周波電極の接続方法を改善したウエハ保持体及びそれを搭載した半導体製造装置 |
| JP5399771B2 (ja) * | 2009-05-14 | 2014-01-29 | 株式会社ニューフレアテクノロジー | 成膜装置 |
| US20100326357A1 (en) * | 2009-06-30 | 2010-12-30 | Wei-Hung Huang | Nozzle and furnace having the same |
| TWI422080B (zh) * | 2010-08-20 | 2014-01-01 | Txc Corp | Enhanced gas - tightness of the oscillator device wafer - level package structure |
| US20120214016A1 (en) * | 2011-02-22 | 2012-08-23 | General Electric Company | Constrained metal flanges and methods for making the same |
| US9915475B2 (en) * | 2011-04-12 | 2018-03-13 | Jiaxiong Wang | Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes |
| US8963321B2 (en) | 2011-09-12 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
| US8519532B2 (en) * | 2011-09-12 | 2013-08-27 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
| TWI470730B (zh) * | 2012-09-18 | 2015-01-21 | Asia Pacific Microsystems Inc | Wafer holding device |
| TWI627305B (zh) * | 2013-03-15 | 2018-06-21 | 應用材料股份有限公司 | 用於轉盤處理室之具有剛性板的大氣蓋 |
| JP6105746B2 (ja) * | 2013-11-12 | 2017-03-29 | 京セラ株式会社 | 試料保持具 |
| CN105392758B (zh) * | 2014-03-27 | 2019-04-09 | 日本碍子株式会社 | 陶瓷板与金属制圆筒部件的接合结构 |
| JP6525791B2 (ja) * | 2015-07-28 | 2019-06-05 | 京セラ株式会社 | 試料保持具およびこれを備えた試料処理装置 |
| JP6328697B2 (ja) * | 2016-07-19 | 2018-05-23 | 日本特殊陶業株式会社 | セラミック−金属構造体 |
| US11011355B2 (en) | 2017-05-12 | 2021-05-18 | Lam Research Corporation | Temperature-tuned substrate support for substrate processing systems |
| US12120781B2 (en) * | 2019-04-16 | 2024-10-15 | Niterra Co., Ltd. | Method of manufacturing holding device, method of manufacturing structure for holding device, and holding device |
| KR102814220B1 (ko) * | 2020-08-21 | 2025-05-28 | 니혼도꾸슈도교 가부시키가이샤 | 접합체, 유지 장치, 및 정전 척 |
| DE102022127528A1 (de) * | 2022-10-19 | 2024-04-25 | Vat Holding Ag | Heizvorrichtung |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6015305U (ja) * | 1983-07-12 | 1985-02-01 | 日本電気株式会社 | 小児専用ｘ線診断装置の補助寝台 |
| DE3434004C2 (de) | 1984-09-15 | 1987-03-26 | Dornier System Gmbh, 7990 Friedrichshafen | Verfahren und Vorrichtung zur Müllvergasung |
| US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
| JP3597936B2 (ja) * | 1996-03-27 | 2004-12-08 | 京セラ株式会社 | ウェハ保持装置 |
| JP3622353B2 (ja) | 1996-07-12 | 2005-02-23 | 東陶機器株式会社 | 静電チャックステージ及びその製造方法 |
| US6120609A (en) * | 1996-10-25 | 2000-09-19 | Applied Materials, Inc. | Self-aligning lift mechanism |
| US6372048B1 (en) * | 1997-06-09 | 2002-04-16 | Tokyo Electron Limited | Gas processing apparatus for object to be processed |
| JP3389484B2 (ja) | 1997-11-28 | 2003-03-24 | 京セラ株式会社 | 窒化アルミニウム接合構造体とその製造方法 |
| JP4641569B2 (ja) * | 1998-07-24 | 2011-03-02 | 日本碍子株式会社 | 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置 |
| JP3512650B2 (ja) | 1998-09-30 | 2004-03-31 | 京セラ株式会社 | 加熱装置 |
| JP4021575B2 (ja) | 1999-01-28 | 2007-12-12 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体およびその製造方法 |
| JP2001257144A (ja) * | 2000-03-09 | 2001-09-21 | Tokyo Electron Ltd | 基板の加熱処理装置 |
| JP2002025913A (ja) | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用サセプタとそれを用いた半導体製造装置 |
| JP2002121083A (ja) * | 2000-10-10 | 2002-04-23 | Kyocera Corp | セラミック部材と金属部材の接合体及びこれを用いたウエハ支持部材 |
| JP4009100B2 (ja) * | 2000-12-28 | 2007-11-14 | 東京エレクトロン株式会社 | 基板加熱装置および基板加熱方法 |
| JP4331901B2 (ja) * | 2001-03-30 | 2009-09-16 | 日本碍子株式会社 | セラミックサセプターの支持構造 |
| JP3678413B2 (ja) * | 2001-05-31 | 2005-08-03 | 京セラ株式会社 | 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材 |
| JP3687849B2 (ja) * | 2002-02-18 | 2005-08-24 | 東芝セラミックス株式会社 | 高温熱処理用ウェーハボート支え治具 |
| KR100422452B1 (ko) * | 2002-06-18 | 2004-03-11 | 삼성전자주식회사 | 로드락 챔버용 스토리지 엘리베이터 샤프트의 실링장치 |
| JP4060684B2 (ja) * | 2002-10-29 | 2008-03-12 | 日本発条株式会社 | ステージ |
| JP4518370B2 (ja) * | 2003-07-10 | 2010-08-04 | 日本碍子株式会社 | セラミックサセプターの支持構造 |
-
2006
- 2006-02-22 JP JP2007504744A patent/JP4866836B2/ja active Active
- 2006-02-22 WO PCT/JP2006/303150 patent/WO2006090730A1/ja not_active Ceased
- 2006-02-22 TW TW095105928A patent/TW200711030A/zh unknown
- 2006-02-22 US US11/816,814 patent/US8956459B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI641541B (zh) * | 2015-10-23 | 2018-11-21 | 日商阿基里斯股份有限公司 | 間隔件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2006090730A1 (ja) | 2008-07-24 |
| JP4866836B2 (ja) | 2012-02-01 |
| WO2006090730A1 (ja) | 2006-08-31 |
| US8956459B2 (en) | 2015-02-17 |
| US20090130825A1 (en) | 2009-05-21 |
| TW200711030A (en) | 2007-03-16 |
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