TW200711030A - Joined article and member for holding wafer and structure for mounting the same, and method for treating wafer - Google Patents

Joined article and member for holding wafer and structure for mounting the same, and method for treating wafer

Info

Publication number
TW200711030A
TW200711030A TW095105928A TW95105928A TW200711030A TW 200711030 A TW200711030 A TW 200711030A TW 095105928 A TW095105928 A TW 095105928A TW 95105928 A TW95105928 A TW 95105928A TW 200711030 A TW200711030 A TW 200711030A
Authority
TW
Taiwan
Prior art keywords
wafer
joined
mounting
same
treating
Prior art date
Application number
TW095105928A
Other languages
English (en)
Chinese (zh)
Other versions
TWI312548B (enExample
Inventor
Tsunehiko Nakamura
Tatsuya Maehara
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of TW200711030A publication Critical patent/TW200711030A/zh
Application granted granted Critical
Publication of TWI312548B publication Critical patent/TWI312548B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW095105928A 2005-02-23 2006-02-22 Joined article and member for holding wafer and structure for mounting the same, and method for treating wafer TW200711030A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005047787 2005-02-23

Publications (2)

Publication Number Publication Date
TW200711030A true TW200711030A (en) 2007-03-16
TWI312548B TWI312548B (enExample) 2009-07-21

Family

ID=36927368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105928A TW200711030A (en) 2005-02-23 2006-02-22 Joined article and member for holding wafer and structure for mounting the same, and method for treating wafer

Country Status (4)

Country Link
US (1) US8956459B2 (enExample)
JP (1) JP4866836B2 (enExample)
TW (1) TW200711030A (enExample)
WO (1) WO2006090730A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470730B (zh) * 2012-09-18 2015-01-21 Asia Pacific Microsystems Inc Wafer holding device
CN115066408A (zh) * 2020-08-21 2022-09-16 日本特殊陶业株式会社 接合体、保持装置以及静电卡盘

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222503B2 (ja) * 2006-11-27 2013-06-26 日本碍子株式会社 セラミックス薄板体と金属薄板体とを備えるデバイス
WO2008156367A1 (en) * 2007-06-21 2008-12-24 Asml Netherlands B.V. Method of loading a substrate on a substrate table, device manufacturing method, computer program, data carrier and apparatus
US8446566B2 (en) 2007-09-04 2013-05-21 Asml Netherlands B.V. Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method
US9013682B2 (en) 2007-06-21 2015-04-21 Asml Netherlands B.V. Clamping device and object loading method
JP2010232532A (ja) * 2009-03-27 2010-10-14 Sumitomo Electric Ind Ltd 高周波電極の接続方法を改善したウエハ保持体及びそれを搭載した半導体製造装置
JP5399771B2 (ja) * 2009-05-14 2014-01-29 株式会社ニューフレアテクノロジー 成膜装置
US20100326357A1 (en) * 2009-06-30 2010-12-30 Wei-Hung Huang Nozzle and furnace having the same
TWI422080B (zh) * 2010-08-20 2014-01-01 Txc Corp Enhanced gas - tightness of the oscillator device wafer - level package structure
US20120214016A1 (en) * 2011-02-22 2012-08-23 General Electric Company Constrained metal flanges and methods for making the same
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
US8519532B2 (en) * 2011-09-12 2013-08-27 Infineon Technologies Ag Semiconductor device including cladded base plate
US8963321B2 (en) 2011-09-12 2015-02-24 Infineon Technologies Ag Semiconductor device including cladded base plate
TWI627305B (zh) * 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
WO2015072496A1 (ja) * 2013-11-12 2015-05-21 京セラ株式会社 試料保持具
CN105392758B (zh) * 2014-03-27 2019-04-09 日本碍子株式会社 陶瓷板与金属制圆筒部件的接合结构
JP6525791B2 (ja) * 2015-07-28 2019-06-05 京セラ株式会社 試料保持具およびこれを備えた試料処理装置
JP6545601B2 (ja) * 2015-10-23 2019-07-17 アキレス株式会社 セパレータ
JP6328697B2 (ja) * 2016-07-19 2018-05-23 日本特殊陶業株式会社 セラミック−金属構造体
US11011355B2 (en) * 2017-05-12 2021-05-18 Lam Research Corporation Temperature-tuned substrate support for substrate processing systems
WO2020213368A1 (ja) * 2019-04-16 2020-10-22 日本特殊陶業株式会社 保持装置の製造方法、保持装置用の構造体の製造方法および保持装置
DE102022127528A1 (de) * 2022-10-19 2024-04-25 Vat Holding Ag Heizvorrichtung

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015305U (ja) * 1983-07-12 1985-02-01 日本電気株式会社 小児専用ｘ線診断装置の補助寝台
DE3434004C2 (de) 1984-09-15 1987-03-26 Dornier System Gmbh, 7990 Friedrichshafen Verfahren und Vorrichtung zur Müllvergasung
KR100280772B1 (ko) * 1994-08-31 2001-02-01 히가시 데쓰로 처리장치
JP3597936B2 (ja) * 1996-03-27 2004-12-08 京セラ株式会社 ウェハ保持装置
JP3622353B2 (ja) 1996-07-12 2005-02-23 東陶機器株式会社 静電チャックステージ及びその製造方法
US6120609A (en) * 1996-10-25 2000-09-19 Applied Materials, Inc. Self-aligning lift mechanism
US6372048B1 (en) * 1997-06-09 2002-04-16 Tokyo Electron Limited Gas processing apparatus for object to be processed
JP3389484B2 (ja) 1997-11-28 2003-03-24 京セラ株式会社 窒化アルミニウム接合構造体とその製造方法
JP4641569B2 (ja) 1998-07-24 2011-03-02 日本碍子株式会社 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置
JP3512650B2 (ja) 1998-09-30 2004-03-31 京セラ株式会社 加熱装置
JP4021575B2 (ja) * 1999-01-28 2007-12-12 日本碍子株式会社 セラミックス部材と金属部材との接合体およびその製造方法
JP2001257144A (ja) * 2000-03-09 2001-09-21 Tokyo Electron Ltd 基板の加熱処理装置
JP2002025913A (ja) 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP2002121083A (ja) * 2000-10-10 2002-04-23 Kyocera Corp セラミック部材と金属部材の接合体及びこれを用いたウエハ支持部材
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
JP4331901B2 (ja) * 2001-03-30 2009-09-16 日本碍子株式会社 セラミックサセプターの支持構造
JP3678413B2 (ja) * 2001-05-31 2005-08-03 京セラ株式会社 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材
JP3687849B2 (ja) * 2002-02-18 2005-08-24 東芝セラミックス株式会社 高温熱処理用ウェーハボート支え治具
KR100422452B1 (ko) * 2002-06-18 2004-03-11 삼성전자주식회사 로드락 챔버용 스토리지 엘리베이터 샤프트의 실링장치
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ
JP4518370B2 (ja) * 2003-07-10 2010-08-04 日本碍子株式会社 セラミックサセプターの支持構造

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470730B (zh) * 2012-09-18 2015-01-21 Asia Pacific Microsystems Inc Wafer holding device
CN115066408A (zh) * 2020-08-21 2022-09-16 日本特殊陶业株式会社 接合体、保持装置以及静电卡盘
CN115066408B (zh) * 2020-08-21 2023-12-05 日本特殊陶业株式会社 接合体、保持装置以及静电卡盘

Also Published As

Publication number Publication date
US8956459B2 (en) 2015-02-17
TWI312548B (enExample) 2009-07-21
JPWO2006090730A1 (ja) 2008-07-24
US20090130825A1 (en) 2009-05-21
JP4866836B2 (ja) 2012-02-01
WO2006090730A1 (ja) 2006-08-31

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