TWI311815B - Thin film transistor array panel and manufacturing method thereof - Google Patents
Thin film transistor array panel and manufacturing method thereof Download PDFInfo
- Publication number
- TWI311815B TWI311815B TW092119459A TW92119459A TWI311815B TW I311815 B TWI311815 B TW I311815B TW 092119459 A TW092119459 A TW 092119459A TW 92119459 A TW92119459 A TW 92119459A TW I311815 B TWI311815 B TW I311815B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- array substrate
- transistor array
- thin film
- film transistor
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims abstract description 139
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 172
- 238000003860 storage Methods 0.000 claims description 66
- 239000004020 conductor Substances 0.000 claims description 52
- 239000003990 capacitor Substances 0.000 claims description 47
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 40
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 208
- 239000004973 liquid crystal related substance Substances 0.000 description 34
- 229910052732 germanium Inorganic materials 0.000 description 32
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- -1 region Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020042659A KR100878238B1 (ko) | 2002-07-19 | 2002-07-19 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| KR1020020068107A KR100878278B1 (ko) | 2002-11-05 | 2002-11-05 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402888A TW200402888A (en) | 2004-02-16 |
| TWI311815B true TWI311815B (en) | 2009-07-01 |
Family
ID=31949615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092119459A TWI311815B (en) | 2002-07-19 | 2003-07-16 | Thin film transistor array panel and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7205570B2 (https=) |
| JP (1) | JP4644417B2 (https=) |
| CN (1) | CN100378902C (https=) |
| TW (1) | TWI311815B (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524876B1 (en) * | 1999-04-08 | 2003-02-25 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
| US7205570B2 (en) * | 2002-07-19 | 2007-04-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
| US7172913B2 (en) * | 2004-03-19 | 2007-02-06 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
| JP4802462B2 (ja) * | 2004-07-27 | 2011-10-26 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
| KR101112538B1 (ko) * | 2004-07-27 | 2012-03-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR20060016920A (ko) * | 2004-08-19 | 2006-02-23 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR101066303B1 (ko) * | 2004-09-09 | 2011-09-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| US7859606B2 (en) | 2004-09-15 | 2010-12-28 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| KR101090252B1 (ko) * | 2004-09-24 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| KR20060030577A (ko) | 2004-10-06 | 2006-04-11 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| TWI252587B (en) | 2004-12-14 | 2006-04-01 | Quanta Display Inc | Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display |
| CN100371814C (zh) * | 2005-01-26 | 2008-02-27 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器的像素电极接触点的制造方法 |
| KR101160829B1 (ko) * | 2005-02-15 | 2012-06-29 | 삼성전자주식회사 | 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법 |
| KR101133766B1 (ko) * | 2005-03-29 | 2012-04-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
| US7911568B2 (en) * | 2005-05-13 | 2011-03-22 | Samsung Electronics Co., Ltd. | Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel |
| KR101369864B1 (ko) * | 2005-08-12 | 2014-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조방법 |
| KR101184640B1 (ko) * | 2006-03-15 | 2012-09-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| CN100433338C (zh) * | 2006-06-23 | 2008-11-12 | 北京京东方光电科技有限公司 | 一种薄膜晶体管器件阵列基板结构及其制造方法 |
| CN100426511C (zh) * | 2006-06-23 | 2008-10-15 | 北京京东方光电科技有限公司 | 一种薄膜晶体管器件阵列基板结构及其制造方法 |
| KR20080000788A (ko) * | 2006-06-28 | 2008-01-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| US8283724B2 (en) | 2007-02-26 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device, and method for manufacturing the same |
| US8766448B2 (en) * | 2007-06-25 | 2014-07-01 | Sensor Electronic Technology, Inc. | Chromium/Titanium/Aluminum-based semiconductor device contact |
| US9514947B2 (en) | 2007-06-25 | 2016-12-06 | Sensor Electronic Technology, Inc. | Chromium/titanium/aluminum-based semiconductor device contact fabrication |
| US9064845B2 (en) | 2007-06-25 | 2015-06-23 | Sensor Electronic Technology, Inc. | Methods of fabricating a chromium/titanium/aluminum-based semiconductor device contact |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| KR101414043B1 (ko) * | 2007-12-04 | 2014-07-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
| TW201039034A (en) * | 2009-04-27 | 2010-11-01 | Chunghwa Picture Tubes Ltd | Pixel structure and the method of forming the same |
| KR101571803B1 (ko) * | 2009-06-09 | 2015-11-26 | 삼성디스플레이 주식회사 | 어레이 기판 및 이의 제조 방법 |
| TWI650848B (zh) | 2009-08-07 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| TWI426566B (zh) * | 2009-11-05 | 2014-02-11 | 國立臺灣大學 | 薄膜電晶體與其製法 |
| KR101582946B1 (ko) * | 2009-12-04 | 2016-01-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR101804589B1 (ko) * | 2009-12-11 | 2018-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| US8288767B2 (en) * | 2010-01-04 | 2012-10-16 | National Taiwan University | Thin-film transistor and forming method thereof |
| KR20110116803A (ko) * | 2010-04-20 | 2011-10-26 | 삼성전자주식회사 | 표시 기판, 이를 포함하는 액정 표시 장치 및 이의 제조 방법 |
| KR101741732B1 (ko) * | 2010-05-07 | 2017-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP5667868B2 (ja) * | 2010-12-24 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9224869B2 (en) | 2012-09-12 | 2015-12-29 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
| CN102881598B (zh) * | 2012-09-17 | 2015-08-12 | 京东方科技集团股份有限公司 | 薄膜晶体管的制造方法、阵列基板的制造方法及显示装置 |
| CN105914227A (zh) * | 2016-06-01 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种走线结构、阵列基板及其制备方法、显示面板 |
| CN106935598B (zh) * | 2017-04-05 | 2019-08-27 | 上海中航光电子有限公司 | 阵列基板及其制造方法、触控面板和触控装置 |
| KR102942090B1 (ko) * | 2020-07-16 | 2026-03-20 | 삼성디스플레이 주식회사 | 표시 장치 |
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| JPH05323373A (ja) * | 1992-05-22 | 1993-12-07 | Fujitsu Ltd | 薄膜トランジスタパネルの製造方法 |
| JP3281167B2 (ja) * | 1994-03-17 | 2002-05-13 | 富士通株式会社 | 薄膜トランジスタの製造方法 |
| CN100414411C (zh) * | 1995-10-03 | 2008-08-27 | 精工爱普生株式会社 | 有源矩阵基板的制造方法和薄膜元件的制造方法 |
| JP3209317B2 (ja) * | 1995-10-31 | 2001-09-17 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
| KR100190023B1 (ko) * | 1996-02-29 | 1999-06-01 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
| JPH11352515A (ja) * | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
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| KR100330097B1 (ko) | 1998-12-21 | 2002-10-25 | 삼성전자 주식회사 | 액정표시장치용박막트랜지스터기판및그제조방법 |
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| US6885064B2 (en) * | 2000-01-07 | 2005-04-26 | Samsung Electronics Co., Ltd. | Contact structure of wiring and a method for manufacturing the same |
| TWI253538B (en) * | 2000-09-30 | 2006-04-21 | Au Optronics Corp | Thin film transistor flat display and its manufacturing method |
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| KR100729764B1 (ko) | 2000-11-15 | 2007-06-20 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
| US6511869B2 (en) * | 2000-12-05 | 2003-01-28 | International Business Machines Corporation | Thin film transistors with self-aligned transparent pixel electrode |
| JP2002296609A (ja) * | 2001-03-29 | 2002-10-09 | Nec Corp | 液晶表示装置及びその製造方法 |
| KR20020083249A (ko) | 2001-04-26 | 2002-11-02 | 삼성전자 주식회사 | 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법 |
| KR100864490B1 (ko) | 2002-06-07 | 2008-10-20 | 삼성전자주식회사 | 배선의 접촉부 및 이를 포함하는 박막 트랜지스터 기판 |
| US7205570B2 (en) * | 2002-07-19 | 2007-04-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
-
2003
- 2003-07-15 US US10/619,668 patent/US7205570B2/en not_active Expired - Fee Related
- 2003-07-16 TW TW092119459A patent/TWI311815B/zh not_active IP Right Cessation
- 2003-07-18 JP JP2003277161A patent/JP4644417B2/ja not_active Expired - Fee Related
- 2003-07-19 CN CNB031514987A patent/CN100378902C/zh not_active Expired - Fee Related
-
2007
- 2007-03-01 US US11/680,733 patent/US7615784B2/en not_active Expired - Fee Related
- 2007-03-01 US US11/680,739 patent/US7632723B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4644417B2 (ja) | 2011-03-02 |
| CN100378902C (zh) | 2008-04-02 |
| TW200402888A (en) | 2004-02-16 |
| US20040056251A1 (en) | 2004-03-25 |
| JP2004056153A (ja) | 2004-02-19 |
| US20070138474A1 (en) | 2007-06-21 |
| US7615784B2 (en) | 2009-11-10 |
| US7632723B2 (en) | 2009-12-15 |
| CN1495851A (zh) | 2004-05-12 |
| US20070138481A1 (en) | 2007-06-21 |
| US7205570B2 (en) | 2007-04-17 |
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