TWI309679B - Sputtering target, optical information recording medium and process for producing the same - Google Patents

Sputtering target, optical information recording medium and process for producing the same Download PDF

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TWI309679B
TWI309679B TW093140520A TW93140520A TWI309679B TW I309679 B TWI309679 B TW I309679B TW 093140520 A TW093140520 A TW 093140520A TW 93140520 A TW93140520 A TW 93140520A TW I309679 B TWI309679 B TW I309679B
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Taiwan
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recording medium
film
information recording
sputtering target
optical information
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TW093140520A
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TW200528568A (en
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Hideo Takami
Masataka Yahagi
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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Description

J309679 九、發明說明： 【發明所屬之技術領域j “本1明係闕於光資訊記錄媒體用薄膜(特別是作為保護 螟)及其製造方法以及可適用於該等之錢鍍靶。該減鍍膜之 非晶質性安定、成膜速度快、與記錄層之密合性以及機械 特性優異、且透過率高，而由於係以非硫化物系所構成， 故鄰接之反射層、記錄層不易產生劣化。 【先前技術】 以往’相變化型之光資訊記錄媒體之保護層一般主要 使用之ZnS—Si〇2,其光學特性、熱特性及與記錄層之密合 性等皆具有優異之特性’故廣泛地被使用。 但，今曰以藍光（Blue-ray)為代表之覆寫型DVD，強烈 要求增加覆寫次數、大容量化及高速記錄化。 光資訊記錄媒體之覆寫次數會變少的原因之一，係因 保護層ZnS~Sl〇2之硫成分從ZnS—Si〇2擴散到被該保護 層夹持之記錄層材内。 又’為了大容量化、高速記錄化’而將具有高反射率 及高熱傳導特性之純Ag或Ag合金使用於反射層材，但該 反射層亦以鄰接於保護層材ZnS — Si〇2之方式配置。 因此’此情形亦同樣的’會因硫成分從ZnS — Si〇2擴 散’而造成純Ag或Ag合金反射層材腐蝕劣化，成為引起 光資訊記錄媒體之反射率等特性劣化之要因。 作為防止該等硫成分擴散之對策，於反射層與保護 層、記錄層與保護層之間設置以氮化物或碳化物為主成分 1309679 之中間層。但，隨積 檟層數之增加，會發生產能降低及成本 增加的問題。 為解決上述卩。】％ 硫化物而僅含氧化物 以上之光學特性及非 ’當務之急係將保護層材取代為不含 之材料，並找出具有與ZnS — Si〇2同等 晶質安定性。 又ZnS Sl〇2等陶瓷靶，因體電阻率高，故無法以直 •歲鑛裝置進行成膜，通常係使用高頻滅鐘（Μ)裝置。 然而，該高頻濺鍍(R F)裝置不僅裝置本身昂貴，且有濺 鎮效率差、耗％里大、控制困難、成膜速度慢等許多缺點。 古又、，為提昇成膜速度而施加高電力時，會使基板溫度 升尚，造成聚碳酸酯製基板產生變形之問題。 由方、以上所述，不使用ZnS、即不含硫成分之透明導電 材料已被提出（參見專利文獻i、專利文獻2)。 然而，專利文獻i有產生光學特性及非晶質性變差區 的問題，而專利文獻2則有無法得到充分的成膜速度、及 產生非晶質性變差區的問題。 專利文獻1:日本特開2000- 256059號公報 專利文獻2.日本特開2000—256061號公報 【發明内容】 本發明係關於光資訊記錄媒體用薄膜（特別是作為保護 膜）及其製造方法以及可適用於該等之濺鍍耙，該濺鍍膜之 非晶質性技、成膜速度快、與記錄層之密合性以及機械 特性優異、且透過率高’而由於係以非硫化物系所構成， 故鄰接之反射層、記錄層不易產生劣化。藉此，可提昇光 1309679 資訊記錄媒體之特性以及大幅改善生產性。 為解決上述課題，本發明人等經過努力研究結果發 現二將習知之保護層材Zns—Sl〇2取代為下述不含硫化物僅 含氧化物之材料，可以被仅π 〇 叶J以確保與ZnS ~ Si〇2具有同等之光學特 性及非晶質安定性，开 > 並且可南速成膜，而能改善光資訊記 錄媒體之特性並提高生產性。 基於以上發現，本發明提供·· 1)種滅鑛乾’其特徵為，於In2〇3_Zn〇 —如〇2系複 合氧化物（以Sn〇2為主成分）中添加選自Si〇2、B2〇3中之 任1種或2種氧化物之材料所構成； 2)如1)之濺鑛革巴，其中當添加Si〇2時，係各元素比分別為
In/(In+Zn+Sn+Si)=〇.〇l〜〇·43、Zn/(In+Zn+Sn+Si)=〇 〇2〜〇 47、 Sn/(In+Zn+Sn+Si)=〇.19〜0.82、Si/(In+Zn+Sn+Si)=〇.〇4〜0.50 所構成 之氧化物； 3) 如1)或2)之濺鍍靶，其中當添加Si〇2時，係 (Sn+Si)/(In+Zn+Sn+Si)=0.45〜0.90 所構成之氧化物； 4) 如1)之瘛錄乾，其中當添加B2〇3時，係各元素比分別為
In/(In+Zn+Sn+B)=〇.〇l〜0.41 、Zn/(In+Zn+Sn+B)=0.02~0.45 、 Sn/(In+Zn+Sn+B)=0.13〜0.81、B/(In+Zn+Sn+ Β)=〇·〇9〜0.66 所構成 之氧化物； 5)如1)或2)之濺鍍靶，其中當添加丑2〇3時，係各元素 比為（Sn + B)/(In+Zn+Sn+B)=0.45~0.90 所構成之氧化物。 又’本發明提供：6)如1)〜5)中任一項之濺鍍靶，其相 對密度為90%以上； 1309679 非晶質性更安定且透過率更高，故適用於覆寫速度快之相 變化記錄媒體或藍光雷射系相變化記錄媒體用保護層材。 又，本發明之濺鍍靶，特別是當添加si〇2時，較佳係各元素比 分別為111/(111+211+311+81)=0.01〜0.43、211/(111+211+811+8〇=0.02〜0.47、 Sn/(In+Zn+Sn+Si)=0· 19〜0.82、Si/(In+Zn+Sn+Si)=0.04〜0.50 所構成之 氧化物；又，以（Sn+SiVCfc+Zn+Sn+Si) =0.45〜0.90所構成之氧化物 更佳。 藉此，可以改善非晶質安定性及光學特性（折射率、透 過率）。若脫離上述數值範圍，則上述特性會有變差的傾向。 再者，於本發明之濺鍍靶，當添加B2〇3時，較佳係各元素比分 別為 In/(In+Zn+Sn+B)=0.01 〜0.41、Zn/(In+Zn+Sn+B)=0.02〜0.45、 Sn/(In+Zn+Sn+B)=0.13〜0.8卜 B/(In+Zn+Sn+ Β)=0·09~0.66 所構成之 氧化物；又，以（Sn+B)/(In+Zn+Sn+B)=0.45〜0.90所構成之氧化物更 佳。藉此，可進一步改善非晶質安定性及光學特性(折射率、透過率）。 又，本發明之濺鍍靶相對密度可為90%以上。密度之 提昇具有可以提高濺鍍膜均一度、及抑制濺鍍時顆粒產生 的效果。 使用如上述之濺鍍靶，可供至少作成薄膜，而形成光 資訊記錄媒體構造一部分之光資訊記錄媒體。並且，可以 製作使用上述濺鍍靶至少作成薄膜而形成光資訊記錄媒體 構造一部分、且該薄膜係配置成鄰接於記錄層或反射層之 光資訊記錄媒體。 本發明藉此成為以Ιη203、ZnO及Sn02之氧化物構成 之以Sn02為主成分之材料，可保有一定的導電性，藉此， 1309679 可增快以高頻濺鍍（RF濺鍍）進行成膜之速度。 又’藉由調整光學特性，可以使保護膜本身之膜厚變 薄，故可以進一步發揮提昇生產性、及基板加熱防止效果。 又，使用本發明減鑛無所形成之薄膜，係形成光資訊 記錄媒體構造之-部分且配置成鄰接於記錄層或反射層， 但如上述，因無使用ZnS，故不會有硫知污染，且硫成分不 會擴散到配置成以保護層夾持之記錄層材中，而對於防止 記錄層劣化有顯著的效果。 又，為了大容量化、高速記錄化’而於反射層材使用 具有高反射率及高熱傳導特性之純Ag4 Ag合金，由於硫 成分亦不會擴散至鄰接之反射層，而同樣能防止反射層材 腐蝕劣化、光資訊記錄媒體之反射率等特性變#，具有優 本發明之濺鍍靶，可將平均粒徑5/m以下之各構成天 素之氧化物粉末’以常溫燒結或高溫加壓燒結來製造。襄 此’可得到具有相對密纟9G%以上之崎卜於此場合， :父佳為於燒結前將以氧化錫為主成分之氧化粉末先於 ⑽代進行預燒結。將該預燒結後粉碎至3㈣以下之 粉末作為燒結用原料。 再者’藉由使用本發明㈣革巴，可以提高生產性、里 =質優良的材料，而具有能以低成本、安定地製造具 有光碟保護膜之光記錄媒體之顯著效果。 本發明之減餘之密度提昇，可減少空洞並使結晶粗 …立化、而使粗之濺鍍面均句平滑，故可減少㈣時產生 13〇9679 之顆粒及結球（nodule)，更具有延長靶壽命之顯著效果， 而能減小品質之偏差、提昇量產性。 實施例 以下，依據貫施例及比較例進行說明。又，本實施例 僅為一例，並未因此例而產生任何限制。亦即，本發明僅 為專利申請範圍所限制者，可包含實施例以外的各種變形。 (實施例1〜3) 準備純度4N之5/xm以下In2〇3粉、Zn〇粉、Si〇2粉及 純度4N之5/xm以下之Sn〇2粉，調和成表i所示組成，進 行濕式混合、乾燥後，於ll〇(TC進行預燒結。 然後，將該預燒結粉以濕式微粉碎至平均粒徑相當於 Ιμιη為止後，添加結合劑，並以噴霧乾燥機進行造粒。將 ό亥造粒粉以低溫進行加壓成形’並於氧氣環境氣氛、12 〇 〇 進行¥ /JIL燒結’再將此燒結材以機械精加工為把形狀。該 把之構成成分、組成比（In/(In+Zn+Sn+si)、
Zn/(In+Zn + Sn+Si)、Sn/(In+Zn+Sn+Si)、Si/(In+Zn+Sn+Si)) 係示於表1。 1309679 表1 例 構成成分 組成 In/(ln+Zn+Sn+Si) Zn/(In+Zn+Sn+Si) Sn/(In+Zn+Sn+Si) Si/(In+Zn+Sn+Si) 透過率 633nm(%) 折射率 633nin 非晶質性 濺鍍方式 成膜速度 (M少） 實施例 ln：〇] 0.18 95 2.2 1.2 RF 3.2 1 ΖπΟ 1.18 SnO： 0.53 SiO： 0.11 實施例 ln：〇j 0.05 98 1.9 1.0 RF 1-5 2 ZnO 0.10 SnO： 0.51 Si02 0.34 實施例 In：〇3 0.12 92 2.2 1.2 RF 2.1 3 ZnO 0.36 SnO； 0.42 Si02 0.10 比較例 ln：〇3 0.03 84 2.3 3.4 DC 5.2 1 ZnO 0.08 SnO： 0.86 SiO] 0.03 比較例 In：〇3 0.008 98 1.7 1.1 RF 0.3 2 ZnO 0.052 Sn〇2 0.25 SiO： 0.69 比較例 InA 0.53 91 1.9 4.2 DC 4.1 3 ZnO 0.13 SnO? 0.27 SiO] 0.07 比較例 ZnS 20mol%Si02 98 2.1 1.1 RF 3.7 4 Si〇i 非晶質性，係以施加退火（600°c、氬環境氣氛、30分 鐘）之成膜樣之XRD測定時對20 = 20〜60°範圍中非成膜玻璃 基板之最大峰強度比表示。 使用經上述加工之大小為6英寸φ之乾，進行滅鐘。藏 鍍條件，係設為RF濺鍍、濺鍍能量1000W、氬氣壓力0.5Pa， 以1500人為目標膜厚進行成膜。 將成膜樣本之透過率（波長633nm)%、折射率（波長 633nm)、非晶質性（以施加退火處理（600°C、氬環境氣氛、 30分鐘）之成膜樣本之XRD(Cu — Κα、40kV、30mA)測定時 對20 = 20〜60°範圍中非成膜玻璃基板之最大峰強度比表 12 1309679 示）、及濺鍍方式盥诸瞄 飞/、成膜速度（A/秒）之測定纴 由以上社罢^ 只J疋、纟。果4不於表1。 上、，，口果，霄施例1〜 ΟΛ nno/ 之"’知錢革巴’ 1相對漆谇·去 90〜99%，而可竇竑6 — ，、祁対在度達 叩J A細安定的RF濺鑛。 1.5〜3.2 A/秒，且托技 且成膜速度可達 ^ 具極佳之濺鍍性。 濺鍍膜之透禍&、去 1.9-2 2 » £.4, β μ ^ ' 2〜98%(633nm)，折射率為 (1.0-1.2) 〇 八有女疋之非晶質性
及j實:例之乾由於不❹Zns，故不會發生因硫之擴 /木而¥致光魏記錄媒體之特性劣化 比，成膜樣本之透過率、折射率、非晶質;;: 靶密度、成膜速度皆為良好之值。 疋’生 (比較例1〜3) 組成 並與 對一 所不，準備與本發明條件不同之原料粉成分及 比的材料’特別是’於比較例4中準備Μ原料粉， 實施例以同樣條件製料，並使用該㈣錢鑛膜。 部分材料實施DC(直流）激鍍。結果同樣地示於表卜 脫離本發明組成比條件之比較例其成分與組成，例如 比較例1’由於錫氧化物之含量多且矽氧化物含量少，故雖 成膜速度快但會得到透過率84% '折射率2·3及非晶質 性：3.4的不良結果。
關於比較例2，由於銦氧化物量少且矽氧化物量多，故 即使以高頻濺鍍，成膜速度為〇·3人/秒，為顯著不佳的結果。 關於比較例3，由於銦氧化物量多，故非晶質性為4.2 之不良結果。 13 1309679 又，特別是比較例4含有多量ZnS，而為有受硫污染之 虞的材料。 (貫施例4 ~ 6) 準備純度4N之5/xm以下Ιϋ2〇3粉、ZnO粉、B2〇3粉及 純度4N之5/im以下Sn〇2粉，並調和成表2所示組成，進 行濕式混合、乾燥後，於1100°C進行預燒結。 再者，將該預燒結粉與實施例1〜3同樣地精加工為革巴 形狀。該革巴之構成成分、組成比（In/(In+Zn + Sn+B)、 Zn/(In+Zn+Sn+B)、Sn/(In+Zn + Sn+B)、B/(In + Zn+Sn+B))、 ((Sn + B)/(In+Zn + Sn+B))係示於表 2。 表2 例 構成成分 1¾ In/(ln+Zn+Sn+B) Zn/(In+Zn+Sn+B) Sn/(In+2n+Sn+B) B/(In+Zn+Sn+B) 透過率 633nm(%) 633nm 非晶質性 濺鍍方式 成藤 (A物 實施例 4 lni〇j ZnO Sn〇i BA 0.16 0.16 0.48 0.20 94 2.1 1.2 RF ~L9 員/ion列 5 1112U3 ZnO Sn02 BA 0.10 0.10 0.30 0.50 98 1.9 1.0 RF 0.8 貫施例 6 h〇i , ZnO SnO： B：〇j 0.11 0.33 0.39 0.17 93 2.1 1.2 RF TT"~ 比較例 5 ln；〇3 ZnO SnOi B：0j 0.19 0.19 0.56 0.06 84 2.3 3.4 DC 5.2 比較例 6 W-齡花II in:Uj ZnO Sn0; BA 0.08 0.08 0.12 0.72 97 1.7 U RF 0.4 7 In仙 ZnO SnOi 6=0, 0.10 0.01 0.82 0.07 83 2.4 3.1 DC 5.5 非晶質性，係以施加退火（60(TC、氬環境氣氛、3〇分 鐘）之成膜樣之XRD測定時對；^=20〜60〇範圍中非"成膜玻璃 基板之最大峰強度比表示。 、 14 1309679 使用經上述加工之大小A &盆 j為6央寸4之靶，進行濺鍍。濺 鍍條件’係設為RF濺鍍、濺鍍功率1〇〇〇w、氬氣壓力〇 5pa， 以1500A目標膜厚進行成膜。 將成膜樣本之透過率（波長633nm)%、折射率（波長 633ηηι)、非晶質性(以施加退火處理⑽〇。〇、氬環境氣氛、 3〇分鐘）之成膜樣本之XRD(Cu — Κα、術v、π—測定時 對·20〜60〇範圍中非成膜玻璃基板之最大峰強度比表示） 及濺鍍方式與成膜速度（Α/秒）測定結果等。 由以上結果，實施例4〜6之滅鑛_，其 90〜95%’而可實施安定…鑛。且，成膜速= 〇·8 1，9 Α/秒’而具良好安定的濺鍍性。 濺鍍膜之透過率達到93〜98%(633_)，折射率為 ^〜2卜且未見特定之結晶峰，而具有安定之非晶質性 (丄.U〜1.2) 〇 本實施例之靶因不使用ZnS，故不會發生因硫之 污染而導致光資訊記錄媒體之特性劣化。又，與後^較 ㈣比’成膜樣本之透過率、折射率、非晶質安定性 密度、成膜速度皆表示良好之值。 巴 (比較例5〜7) έ、如表2所示，準備與本發明條件不同之原料粉成分及 組成比的材料，並與實施例α同樣條件製作革巴，並= k形成減鑛膜。對一部分材料實施Dc(直流） = 同樣示於表2。 ”…果 脫離本發明組成比條件之比較例其成分與組成，例如 15 1309679 關於比較例5 ’由於b2〇3較規定量少，故雖成膜速度快但 會得到透過率84°/〇、折射率2.3及非晶質性3.4的不良結果。 比較例6中由於辞氧化物量及錫氧化物量少、且硼氧 化物$多，故即使以高頻濺鍍，成膜速度為0.4 A/秒，為顯 著不佳之結果。 關於比較例7，由於鋅氧化物量及硼氧化物量少、且錫 乳化物量多，故得到透過率83%、折射率2.4及非晶質性 的不良結果。 使用本發明之濺鍍靶所形成之薄膜’形成光資訊記錄 媒體構造之-部分，由於不使用ZnS，故不會有硫成分擴散 到記錄層#，藉此而具不使記錄層劣化之顯著效果。又， 將”有同反射率、尚熱傳導性之純Ag或合金使用於鄰 接之反射層時’亦不會有硫成分朝該反射層擴散，而同樣 旎防止反射層腐蝕劣化而抑制特性劣化，具有優異的效果。 再者’將非晶質性安定仆、卄轴 文疋化並賦予靶導電性，且使相 對岔度達9 0 %以上之高烫：择儿 ,. 又化，故可進行安定的RF濺鍍。 並且’可使錢錄之控制性轡 „ θ 憂谷易，且提南成膜速度，並能 知幵濺鍍效果，而具有顯著 t ^ 呆又可減少成膜時濺鍍 4產生顆粒（產塵）或結球 目& 减少〇〇貝偏差、提昇量產性，而 具此以低成本 '安定地製造且 轉二曰士 s ^ 八有光碟保蠖膜之光記錄媒 月立’而具有顯者效果。 【圖式之簡單說明】 jfe. 〇 4 16

Claims (1)

1309679 第093140520號發明專科申秦秦丰讀毒到，範圍修正本(2009.3.) 十、申請專利範圍： 公告本 98. 3. 1 § 1.一種濺鍍靶，其特徵在於，係於In203-Zn0-Sn02系複合氧化物（以 Sn02為主成分）中添加Si02之材料所構成；其各元素比分別為 In/(In+Zn+Sn+Si)=0.01-0.43 、 Zn/(In+Zn+Sn+Si)=0.02-0.47 、 Sn/(In+Zn+Sn+Si)=0.19 〜0.82 、 Si/(In+Zn+Sn+Si)=0.04 〜0.50 、 (Sn+Si)/(In+Zn+Sn+Si)=0.45〜0.90。 2. —種濺鍍靶，其特徵在於，以於In203-Zn0-Sn02系複合氧化 物（以Sn02為主成分）中添加B2〇3之材料所構成；其各元素比分別 為 In/(In+Zn+Sn+B)=0.01 〜0·41 、 Zn/(In+Zn+Sn+B)=0.02 〜0.45 、 Sn/(In+Zn+Sn+B)=0.13-0.81 、 B/(In+Zn+Sn+B)=0.09 〜0.66 、 (Sn+B)/(In+Zn+Sn+B)=0.45〜0.90。 3 .如申請專利範圍第1項之濺鍍靶，其相對密度係90% 以上。 4.如申請專利範圍第2項之濺鍍靶，其相對密度係90% 以上。 5 . —種光資訊記錄媒體，其特徵在於，係使用申請專利 範圍第1至4項中任一項之濺鍍靶作成薄膜，而形成光資 訊記錄媒體構造之一部分。 6. 如申請專利範圍第5項之光資訊記錄媒體，其中該薄 膜配置成鄰接於記錄層或反射層。 7. —種光資訊記錄媒體之製造方法，其特徵在於，係 使用申請專利範圍第1至4項中任一項之濺鍍靶，於氬濺 鍍氣體環境氣氛中進行高頻濺鍍以作成薄膜，而形成光資 訊記錄媒體構造之一部分。 17 1309679 8.如申請專利範圍第7項之光資訊記錄媒體之製造方 法，其中該薄膜配置成鄰接於記錄層或反射層。 十一、圖式： 無0
18
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