TWI301730B - - Google Patents
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- Publication number
- TWI301730B TWI301730B TW095107948A TW95107948A TWI301730B TW I301730 B TWI301730 B TW I301730B TW 095107948 A TW095107948 A TW 095107948A TW 95107948 A TW95107948 A TW 95107948A TW I301730 B TWI301730 B TW I301730B
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- wafer
- plasma
- processed
- processing chamber
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 129
- 238000005530 etching Methods 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 70
- 230000007246 mechanism Effects 0.000 claims description 56
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 230000009471 action Effects 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 123
- 230000005684 electric field Effects 0.000 description 21
- 239000004020 conductor Substances 0.000 description 20
- 238000009832 plasma treatment Methods 0.000 description 17
- 238000012360 testing method Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- 239000010453 quartz Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 230000005389 magnetism Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910052770 Uranium Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000010891 electric arc Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 101000683587 Clostridium acetobutylicum (strain ATCC 824 / DSM 792 / JCM 1419 / LMG 5710 / VKM B-1787) Reverse rubrerythrin-2 Proteins 0.000 description 1
- 208000035480 Ring chromosome 8 syndrome Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379375 | 2001-12-13 | ||
| JP2002027630A JP4209618B2 (ja) | 2002-02-05 | 2002-02-05 | プラズマ処理装置及びリング部材 |
| JP2002058833A JP2003257935A (ja) | 2002-03-05 | 2002-03-05 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200626020A TW200626020A (en) | 2006-07-16 |
| TWI301730B true TWI301730B (enExample) | 2008-10-01 |
Family
ID=27347947
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091135997A TWI272877B (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
| TW095107948A TW200626020A (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processor using the ring mechanism |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091135997A TWI272877B (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7882800B2 (enExample) |
| AU (1) | AU2002366921A1 (enExample) |
| TW (2) | TWI272877B (enExample) |
| WO (1) | WO2003054947A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701126A (zh) * | 2013-12-10 | 2015-06-10 | 东京毅力科创株式会社 | 等离子体处理装置以及聚焦环 |
| TWI496511B (zh) * | 2008-10-31 | 2015-08-11 | Lam Res Corp | 電漿處理腔室之下部電極組件 |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| WO2003054947A1 (fr) * | 2001-12-13 | 2003-07-03 | Tokyo Electron Limited | Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau |
| DE10260645B3 (de) * | 2002-12-23 | 2004-09-16 | Infineon Technologies Ag | Kompensationsrahmen zur Aufnahme eines Substrats |
| JP4421305B2 (ja) * | 2003-01-07 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| WO2004095529A2 (en) * | 2003-03-21 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
| TWI488236B (zh) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
| KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
| US20050193951A1 (en) * | 2004-03-08 | 2005-09-08 | Muneo Furuse | Plasma processing apparatus |
| JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| US7713379B2 (en) | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| KR20080001164A (ko) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법 |
| US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US7718559B2 (en) * | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| JP5548841B2 (ja) * | 2008-01-16 | 2014-07-16 | チャーム エンジニアリング シーオー エルティーディー | 基板処理装置 |
| US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
| US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
| JP5281811B2 (ja) * | 2008-03-13 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 |
| US20090291035A1 (en) * | 2008-05-23 | 2009-11-26 | Michael Colin Begg | Vacuum chamber |
| US9136105B2 (en) * | 2008-06-30 | 2015-09-15 | United Microelectronics Corp. | Bevel etcher |
| JP5255936B2 (ja) * | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
| JP2010045200A (ja) * | 2008-08-13 | 2010-02-25 | Tokyo Electron Ltd | フォーカスリング、プラズマ処理装置及びプラズマ処理方法 |
| US8287650B2 (en) * | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
| US20100089315A1 (en) * | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| KR100903306B1 (ko) * | 2008-10-08 | 2009-06-16 | 주식회사 아이피에스 | 진공처리장치 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| JP5601794B2 (ja) * | 2009-05-29 | 2014-10-08 | 株式会社東芝 | プラズマエッチング装置 |
| KR101559913B1 (ko) * | 2009-06-25 | 2015-10-27 | 삼성전자주식회사 | 플라즈마 건식 식각 장치 |
| DE202010014805U1 (de) * | 2009-11-02 | 2011-02-17 | Lam Research Corporation (Delaware Corporation) | Heissrandring mit geneigter oberer Oberfläche |
| US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US9117767B2 (en) | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US20130000848A1 (en) * | 2011-07-01 | 2013-01-03 | Novellus Systems Inc. | Pedestal with edge gas deflector for edge profile control |
| US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
| US20140179108A1 (en) * | 2012-12-21 | 2014-06-26 | Applied Materials, Inc. | Wafer Edge Protection and Efficiency Using Inert Gas and Ring |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| US20160099162A1 (en) * | 2013-06-26 | 2016-04-07 | Applied Materials, Inc. | Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber |
| US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| JP2015090916A (ja) * | 2013-11-06 | 2015-05-11 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US20170002465A1 (en) | 2015-06-30 | 2017-01-05 | Lam Research Corporation | Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity |
| US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| JP6937753B2 (ja) * | 2015-12-07 | 2021-09-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 融合されたカバーリング |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10438833B2 (en) * | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| US10562232B2 (en) * | 2016-08-05 | 2020-02-18 | Spm Automation (Canada) Inc. | Controlling direction and magnitude of weld force vector during a plastic welding operation |
| KR102604063B1 (ko) * | 2016-08-18 | 2023-11-21 | 삼성전자주식회사 | 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치 |
| US10410832B2 (en) * | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| KR102806341B1 (ko) * | 2017-01-04 | 2025-05-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 플라즈마 처리 장치 |
| US10662520B2 (en) | 2017-03-29 | 2020-05-26 | Applied Materials, Inc. | Method for recycling substrate process components |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| WO2020081644A1 (en) * | 2018-10-18 | 2020-04-23 | Lam Research Corporation | Lower plasma exclusion zone ring for bevel etcher |
| US11094511B2 (en) * | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
| KR102244438B1 (ko) * | 2018-12-17 | 2021-04-27 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 | 플라즈마 처리 장치에 사용되는 rf 전극 조립품 및 플라즈마 처리 장치 |
| KR102647177B1 (ko) * | 2019-02-11 | 2024-03-15 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US11450545B2 (en) * | 2019-04-17 | 2022-09-20 | Samsung Electronics Co., Ltd. | Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same |
| KR102731053B1 (ko) * | 2020-03-19 | 2024-11-15 | 삼성전자주식회사 | 기판 처리 장치 |
| CN115315775A (zh) | 2020-03-23 | 2022-11-08 | 朗姆研究公司 | 衬底处理系统中的中环腐蚀补偿 |
| CN113496862B (zh) * | 2020-04-02 | 2024-09-06 | 中微半导体设备(上海)股份有限公司 | 等离子体反应器及其射频功率分布调节方法 |
| US20220051912A1 (en) * | 2020-08-12 | 2022-02-17 | Taiwan Semiconductor Manufacturing Company Limited | Gas flow control during semiconductor fabrication |
| US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
| KR102593140B1 (ko) * | 2020-12-18 | 2023-10-25 | 세메스 주식회사 | 지지 유닛 및 기판 처리 장치 |
| KR20230067308A (ko) * | 2021-11-09 | 2023-05-16 | 삼성전자주식회사 | 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| CN114300336B (zh) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | 一种等离子体反应器 |
| KR20240161340A (ko) | 2023-05-04 | 2024-11-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 기판 처리 장치 |
| US12444580B2 (en) * | 2023-05-25 | 2025-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma processing apparatus and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
| JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
| US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
| US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US6210593B1 (en) * | 1997-02-06 | 2001-04-03 | Matsushita Electric Industrial Co., Ltd. | Etching method and etching apparatus |
| US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
| US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
| JP3417328B2 (ja) * | 1999-02-23 | 2003-06-16 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| EP1230664B1 (en) * | 1999-11-15 | 2008-05-07 | Lam Research Corporation | Processing systems |
| JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| KR20020095324A (ko) * | 2001-06-14 | 2002-12-26 | 삼성전자 주식회사 | 고주파 파워를 이용하는 반도체장치 제조설비 |
| WO2003054947A1 (fr) * | 2001-12-13 | 2003-07-03 | Tokyo Electron Limited | Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau |
-
2002
- 2002-12-12 WO PCT/JP2002/013016 patent/WO2003054947A1/ja not_active Ceased
- 2002-12-12 US US10/498,478 patent/US7882800B2/en not_active Expired - Fee Related
- 2002-12-12 TW TW091135997A patent/TWI272877B/zh not_active IP Right Cessation
- 2002-12-12 AU AU2002366921A patent/AU2002366921A1/en not_active Abandoned
- 2002-12-12 TW TW095107948A patent/TW200626020A/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI496511B (zh) * | 2008-10-31 | 2015-08-11 | Lam Res Corp | 電漿處理腔室之下部電極組件 |
| CN104701126A (zh) * | 2013-12-10 | 2015-06-10 | 东京毅力科创株式会社 | 等离子体处理装置以及聚焦环 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7882800B2 (en) | 2011-02-08 |
| US20050005859A1 (en) | 2005-01-13 |
| TW200302035A (en) | 2003-07-16 |
| TW200626020A (en) | 2006-07-16 |
| WO2003054947A1 (fr) | 2003-07-03 |
| AU2002366921A1 (en) | 2003-07-09 |
| TWI272877B (en) | 2007-02-01 |
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