TWI301730B - - Google Patents

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Publication number
TWI301730B
TWI301730B TW095107948A TW95107948A TWI301730B TW I301730 B TWI301730 B TW I301730B TW 095107948 A TW095107948 A TW 095107948A TW 95107948 A TW95107948 A TW 95107948A TW I301730 B TWI301730 B TW I301730B
Authority
TW
Taiwan
Prior art keywords
ring
wafer
plasma
processed
processing chamber
Prior art date
Application number
TW095107948A
Other languages
English (en)
Chinese (zh)
Other versions
TW200626020A (en
Inventor
Akira Koshiishi
Mitsuru Hashimoto
Hideaki Tanaka
Shigeru Tahara
Kunihiko Hinata
Jun Ooyabu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002027630A external-priority patent/JP4209618B2/ja
Priority claimed from JP2002058833A external-priority patent/JP2003257935A/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200626020A publication Critical patent/TW200626020A/zh
Application granted granted Critical
Publication of TWI301730B publication Critical patent/TWI301730B/zh

Links

Classifications

    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW095107948A 2001-12-13 2002-12-12 Ring mechanism, and plasma processor using the ring mechanism TW200626020A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001379375 2001-12-13
JP2002027630A JP4209618B2 (ja) 2002-02-05 2002-02-05 プラズマ処理装置及びリング部材
JP2002058833A JP2003257935A (ja) 2002-03-05 2002-03-05 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200626020A TW200626020A (en) 2006-07-16
TWI301730B true TWI301730B (enExample) 2008-10-01

Family

ID=27347947

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091135997A TWI272877B (en) 2001-12-13 2002-12-12 Ring mechanism, and plasma processing device using the ring mechanism
TW095107948A TW200626020A (en) 2001-12-13 2002-12-12 Ring mechanism, and plasma processor using the ring mechanism

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW091135997A TWI272877B (en) 2001-12-13 2002-12-12 Ring mechanism, and plasma processing device using the ring mechanism

Country Status (4)

Country Link
US (1) US7882800B2 (enExample)
AU (1) AU2002366921A1 (enExample)
TW (2) TWI272877B (enExample)
WO (1) WO2003054947A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701126A (zh) * 2013-12-10 2015-06-10 东京毅力科创株式会社 等离子体处理装置以及聚焦环
TWI496511B (zh) * 2008-10-31 2015-08-11 Lam Res Corp 電漿處理腔室之下部電極組件

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246873B (en) 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
WO2003054947A1 (fr) * 2001-12-13 2003-07-03 Tokyo Electron Limited Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau
DE10260645B3 (de) * 2002-12-23 2004-09-16 Infineon Technologies Ag Kompensationsrahmen zur Aufnahme eines Substrats
KR100657054B1 (ko) * 2003-01-07 2006-12-13 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 포커스 링
JP4991286B2 (ja) * 2003-03-21 2012-08-01 東京エレクトロン株式会社 処理中の基板裏面堆積を減らす方法および装置。
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
KR20080001164A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법
US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7718559B2 (en) * 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
WO2009091189A2 (en) * 2008-01-16 2009-07-23 Sosul Co., Ltd. Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
JP5281811B2 (ja) * 2008-03-13 2013-09-04 東京エレクトロン株式会社 プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
US20090291035A1 (en) * 2008-05-23 2009-11-26 Michael Colin Begg Vacuum chamber
US9136105B2 (en) * 2008-06-30 2015-09-15 United Microelectronics Corp. Bevel etcher
JP5255936B2 (ja) * 2008-07-18 2013-08-07 東京エレクトロン株式会社 フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
US8287650B2 (en) * 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
US20100089315A1 (en) * 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
KR100903306B1 (ko) * 2008-10-08 2009-06-16 주식회사 아이피에스 진공처리장치
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP5601794B2 (ja) * 2009-05-29 2014-10-08 株式会社東芝 プラズマエッチング装置
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9117767B2 (en) 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
US20140179108A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Wafer Edge Protection and Efficiency Using Inert Gas and Ring
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
CN111180305A (zh) * 2013-06-26 2020-05-19 应用材料公司 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP2015090916A (ja) * 2013-11-06 2015-05-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US20170002465A1 (en) 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
WO2017099919A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Amalgamated cover ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10562232B2 (en) * 2016-08-05 2020-02-18 Spm Automation (Canada) Inc. Controlling direction and magnitude of weld force vector during a plastic welding operation
KR102604063B1 (ko) * 2016-08-18 2023-11-21 삼성전자주식회사 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102806341B1 (ko) * 2017-01-04 2025-05-12 삼성전자주식회사 포커스 링 및 이를 포함하는 플라즈마 처리 장치
US10662520B2 (en) 2017-03-29 2020-05-26 Applied Materials, Inc. Method for recycling substrate process components
CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
KR20210111872A (ko) 2018-08-13 2021-09-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
SG11202103648WA (en) 2018-10-18 2021-05-28 Lam Res Corp Lower plasma exclusion zone ring for bevel etcher
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
US11875970B2 (en) * 2018-12-17 2024-01-16 Advanced Micro-Fabrication Equipment Inc. China Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus
KR102647177B1 (ko) * 2019-02-11 2024-03-15 삼성전자주식회사 플라즈마 처리 장치
US11450545B2 (en) * 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
KR102731053B1 (ko) * 2020-03-19 2024-11-15 삼성전자주식회사 기판 처리 장치
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
CN113496862B (zh) * 2020-04-02 2024-09-06 中微半导体设备(上海)股份有限公司 等离子体反应器及其射频功率分布调节方法
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
US11499223B2 (en) * 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber
KR102593140B1 (ko) * 2020-12-18 2023-10-25 세메스 주식회사 지지 유닛 및 기판 처리 장치
KR102904705B1 (ko) * 2021-11-09 2025-12-29 삼성전자주식회사 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
CN114300336B (zh) * 2021-12-28 2024-02-23 拓荆科技股份有限公司 一种等离子体反应器
KR20240161340A (ko) 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치
US12444580B2 (en) * 2023-05-25 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma processing apparatus and method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6210593B1 (en) * 1997-02-06 2001-04-03 Matsushita Electric Industrial Co., Ltd. Etching method and etching apparatus
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
JP3417328B2 (ja) * 1999-02-23 2003-06-16 松下電器産業株式会社 プラズマ処理方法及び装置
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
ATE394789T1 (de) * 1999-11-15 2008-05-15 Lam Res Corp Behandlungsvorrichtungen
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
KR20020095324A (ko) * 2001-06-14 2002-12-26 삼성전자 주식회사 고주파 파워를 이용하는 반도체장치 제조설비
WO2003054947A1 (fr) * 2001-12-13 2003-07-03 Tokyo Electron Limited Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496511B (zh) * 2008-10-31 2015-08-11 Lam Res Corp 電漿處理腔室之下部電極組件
CN104701126A (zh) * 2013-12-10 2015-06-10 东京毅力科创株式会社 等离子体处理装置以及聚焦环

Also Published As

Publication number Publication date
AU2002366921A1 (en) 2003-07-09
WO2003054947A1 (fr) 2003-07-03
US20050005859A1 (en) 2005-01-13
TW200626020A (en) 2006-07-16
US7882800B2 (en) 2011-02-08
TW200302035A (en) 2003-07-16
TWI272877B (en) 2007-02-01

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