AU2002366921A1 - Ring mechanism, and plasma processing device using the ring mechanism - Google Patents
Ring mechanism, and plasma processing device using the ring mechanismInfo
- Publication number
- AU2002366921A1 AU2002366921A1 AU2002366921A AU2002366921A AU2002366921A1 AU 2002366921 A1 AU2002366921 A1 AU 2002366921A1 AU 2002366921 A AU2002366921 A AU 2002366921A AU 2002366921 A AU2002366921 A AU 2002366921A AU 2002366921 A1 AU2002366921 A1 AU 2002366921A1
- Authority
- AU
- Australia
- Prior art keywords
- ring mechanism
- processing device
- plasma processing
- ring
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379375 | 2001-12-13 | ||
| JP2001-379375 | 2001-12-13 | ||
| JP2002027630A JP4209618B2 (ja) | 2002-02-05 | 2002-02-05 | プラズマ処理装置及びリング部材 |
| JP2002-27630 | 2002-02-05 | ||
| JP2002-58833 | 2002-03-05 | ||
| JP2002058833A JP2003257935A (ja) | 2002-03-05 | 2002-03-05 | プラズマ処理装置 |
| PCT/JP2002/013016 WO2003054947A1 (fr) | 2001-12-13 | 2002-12-12 | Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2002366921A1 true AU2002366921A1 (en) | 2003-07-09 |
Family
ID=27347947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002366921A Abandoned AU2002366921A1 (en) | 2001-12-13 | 2002-12-12 | Ring mechanism, and plasma processing device using the ring mechanism |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7882800B2 (enExample) |
| AU (1) | AU2002366921A1 (enExample) |
| TW (2) | TW200626020A (enExample) |
| WO (1) | WO2003054947A1 (enExample) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| AU2002366921A1 (en) * | 2001-12-13 | 2003-07-09 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
| DE10260645B3 (de) * | 2002-12-23 | 2004-09-16 | Infineon Technologies Ag | Kompensationsrahmen zur Aufnahme eines Substrats |
| CN101996843B (zh) * | 2003-01-07 | 2013-05-01 | 东京毅力科创株式会社 | 等离子体处理装置及聚焦环 |
| KR101141488B1 (ko) * | 2003-03-21 | 2012-05-03 | 도쿄엘렉트론가부시키가이샤 | 처리중의 기판이면(裏面) 증착 감소방법 및 장치 |
| TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
| KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
| US20050193951A1 (en) * | 2004-03-08 | 2005-09-08 | Muneo Furuse | Plasma processing apparatus |
| JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| KR20080001164A (ko) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법 |
| US8398778B2 (en) * | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US7718559B2 (en) * | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| WO2009091189A2 (en) * | 2008-01-16 | 2009-07-23 | Sosul Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
| US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
| US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
| JP5281811B2 (ja) * | 2008-03-13 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材 |
| US20090291035A1 (en) * | 2008-05-23 | 2009-11-26 | Michael Colin Begg | Vacuum chamber |
| US9136105B2 (en) * | 2008-06-30 | 2015-09-15 | United Microelectronics Corp. | Bevel etcher |
| JP5255936B2 (ja) * | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
| JP2010045200A (ja) * | 2008-08-13 | 2010-02-25 | Tokyo Electron Ltd | フォーカスリング、プラズマ処理装置及びプラズマ処理方法 |
| US8287650B2 (en) | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
| US20100089315A1 (en) * | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
| KR100903306B1 (ko) * | 2008-10-08 | 2009-06-16 | 주식회사 아이피에스 | 진공처리장치 |
| KR101624123B1 (ko) * | 2008-10-31 | 2016-05-25 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| JP5601794B2 (ja) * | 2009-05-29 | 2014-10-08 | 株式会社東芝 | プラズマエッチング装置 |
| KR101559913B1 (ko) * | 2009-06-25 | 2015-10-27 | 삼성전자주식회사 | 플라즈마 건식 식각 장치 |
| DE202010014805U1 (de) * | 2009-11-02 | 2011-02-17 | Lam Research Corporation (Delaware Corporation) | Heissrandring mit geneigter oberer Oberfläche |
| US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US9117767B2 (en) | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
| US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| US20130000848A1 (en) * | 2011-07-01 | 2013-01-03 | Novellus Systems Inc. | Pedestal with edge gas deflector for edge profile control |
| US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
| US20140179108A1 (en) * | 2012-12-21 | 2014-06-26 | Applied Materials, Inc. | Wafer Edge Protection and Efficiency Using Inert Gas and Ring |
| US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
| CN105074869A (zh) * | 2013-06-26 | 2015-11-18 | 应用材料公司 | 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 |
| US20150001180A1 (en) * | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| JP2015090916A (ja) * | 2013-11-06 | 2015-05-11 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP2015115421A (ja) * | 2013-12-10 | 2015-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びフォーカスリング |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US20170002465A1 (en) | 2015-06-30 | 2017-01-05 | Lam Research Corporation | Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity |
| US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
| CN108352297B (zh) * | 2015-12-07 | 2023-04-28 | 应用材料公司 | 合并式盖环 |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10438833B2 (en) * | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| US10562232B2 (en) * | 2016-08-05 | 2020-02-18 | Spm Automation (Canada) Inc. | Controlling direction and magnitude of weld force vector during a plastic welding operation |
| KR102604063B1 (ko) * | 2016-08-18 | 2023-11-21 | 삼성전자주식회사 | 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치 |
| US10410832B2 (en) * | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| KR102806341B1 (ko) * | 2017-01-04 | 2025-05-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 플라즈마 처리 장치 |
| US10662520B2 (en) | 2017-03-29 | 2020-05-26 | Applied Materials, Inc. | Method for recycling substrate process components |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| TWI848010B (zh) * | 2018-10-18 | 2024-07-11 | 美商蘭姆研究公司 | 用於斜面蝕刻器的下電漿排除區域環 |
| US11094511B2 (en) * | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
| KR102244438B1 (ko) * | 2018-12-17 | 2021-04-27 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 | 플라즈마 처리 장치에 사용되는 rf 전극 조립품 및 플라즈마 처리 장치 |
| KR102647177B1 (ko) * | 2019-02-11 | 2024-03-15 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US11450545B2 (en) | 2019-04-17 | 2022-09-20 | Samsung Electronics Co., Ltd. | Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same |
| KR102731053B1 (ko) * | 2020-03-19 | 2024-11-15 | 삼성전자주식회사 | 기판 처리 장치 |
| JP7466686B2 (ja) | 2020-03-23 | 2024-04-12 | ラム リサーチ コーポレーション | 基板処理システムにおける中間リング腐食補償 |
| CN113496862B (zh) * | 2020-04-02 | 2024-09-06 | 中微半导体设备(上海)股份有限公司 | 等离子体反应器及其射频功率分布调节方法 |
| US20220051912A1 (en) * | 2020-08-12 | 2022-02-17 | Taiwan Semiconductor Manufacturing Company Limited | Gas flow control during semiconductor fabrication |
| US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
| KR102593140B1 (ko) * | 2020-12-18 | 2023-10-25 | 세메스 주식회사 | 지지 유닛 및 기판 처리 장치 |
| KR20230067308A (ko) * | 2021-11-09 | 2023-05-16 | 삼성전자주식회사 | 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| CN114300336B (zh) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | 一种等离子体反应器 |
| KR20240161340A (ko) | 2023-05-04 | 2024-11-12 | 삼성전자주식회사 | 포커스 링 및 이를 포함하는 기판 처리 장치 |
| US12444580B2 (en) * | 2023-05-25 | 2025-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma processing apparatus and method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
| JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| JP3257741B2 (ja) | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
| US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
| US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US6210593B1 (en) | 1997-02-06 | 2001-04-03 | Matsushita Electric Industrial Co., Ltd. | Etching method and etching apparatus |
| US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
| US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
| JP3417328B2 (ja) * | 1999-02-23 | 2003-06-16 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| EP1230664B1 (en) * | 1999-11-15 | 2008-05-07 | Lam Research Corporation | Processing systems |
| JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
| US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| KR20020095324A (ko) * | 2001-06-14 | 2002-12-26 | 삼성전자 주식회사 | 고주파 파워를 이용하는 반도체장치 제조설비 |
| AU2002366921A1 (en) * | 2001-12-13 | 2003-07-09 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
-
2002
- 2002-12-12 AU AU2002366921A patent/AU2002366921A1/en not_active Abandoned
- 2002-12-12 WO PCT/JP2002/013016 patent/WO2003054947A1/ja not_active Ceased
- 2002-12-12 TW TW095107948A patent/TW200626020A/zh not_active IP Right Cessation
- 2002-12-12 TW TW091135997A patent/TWI272877B/zh not_active IP Right Cessation
- 2002-12-12 US US10/498,478 patent/US7882800B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI301730B (enExample) | 2008-10-01 |
| US20050005859A1 (en) | 2005-01-13 |
| TW200626020A (en) | 2006-07-16 |
| US7882800B2 (en) | 2011-02-08 |
| TWI272877B (en) | 2007-02-01 |
| WO2003054947A1 (fr) | 2003-07-03 |
| TW200302035A (en) | 2003-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |