TWI297174B - - Google Patents
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- Publication number
- TWI297174B TWI297174B TW094123062A TW94123062A TWI297174B TW I297174 B TWI297174 B TW I297174B TW 094123062 A TW094123062 A TW 094123062A TW 94123062 A TW94123062 A TW 94123062A TW I297174 B TWI297174 B TW I297174B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist film
- film
- photoresist
- solution
- substrate
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 277
- 230000001681 protective effect Effects 0.000 claims description 144
- 230000003287 optical effect Effects 0.000 claims description 136
- 239000000243 solution Substances 0.000 claims description 115
- 239000000758 substrate Substances 0.000 claims description 89
- 239000002253 acid Substances 0.000 claims description 85
- 238000004140 cleaning Methods 0.000 claims description 56
- 239000002904 solvent Substances 0.000 claims description 42
- 238000005406 washing Methods 0.000 claims description 37
- 239000004094 surface-active agent Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 239000000126 substance Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 11
- 239000007853 buffer solution Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 239000002028 Biomass Substances 0.000 claims 1
- 239000000872 buffer Substances 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000007654 immersion Methods 0.000 description 51
- 239000007788 liquid Substances 0.000 description 47
- 230000000694 effects Effects 0.000 description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 36
- 239000011248 coating agent Substances 0.000 description 34
- 238000000576 coating method Methods 0.000 description 34
- 238000011161 development Methods 0.000 description 22
- 238000001035 drying Methods 0.000 description 17
- 206010040844 Skin exfoliation Diseases 0.000 description 16
- 230000008859 change Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000004090 dissolution Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000005286 illumination Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000002730 additional effect Effects 0.000 description 3
- 239000003463 adsorbent Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- -1 perfluoroalkyl sulfonic acid Chemical compound 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010511 deprotection reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- NNJPGOLRFBJNIW-HNNXBMFYSA-N (-)-demecolcine Chemical compound C1=C(OC)C(=O)C=C2[C@@H](NC)CCC3=CC(OC)=C(OC)C(OC)=C3C2=C1 NNJPGOLRFBJNIW-HNNXBMFYSA-N 0.000 description 1
- 125000005739 1,1,2,2-tetrafluoroethanediyl group Chemical group FC(F)([*:1])C(F)(F)[*:2] 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 108090000056 Complement factor B Proteins 0.000 description 1
- 102000003712 Complement factor B Human genes 0.000 description 1
- 108010014172 Factor V Proteins 0.000 description 1
- 108010074864 Factor XI Proteins 0.000 description 1
- 108010068370 Glutens Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 241001247287 Pentalinon luteum Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 241000124033 Salix Species 0.000 description 1
- 108010000499 Thromboplastin Proteins 0.000 description 1
- 102000002262 Thromboplastin Human genes 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000000941 bile Anatomy 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- MAYPHUUCLRDEAZ-UHFFFAOYSA-N chlorine peroxide Inorganic materials ClOOCl MAYPHUUCLRDEAZ-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZHGASCUQXLPSDT-UHFFFAOYSA-N cyclohexanesulfonic acid Chemical compound OS(=O)(=O)C1CCCCC1 ZHGASCUQXLPSDT-UHFFFAOYSA-N 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- OSVXSBDYLRYLIG-UHFFFAOYSA-N dioxidochlorine(.) Chemical compound O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 1
- 235000021312 gluten Nutrition 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004200610A JP2006024692A (ja) | 2004-07-07 | 2004-07-07 | レジストパターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200614344A TW200614344A (en) | 2006-05-01 |
| TWI297174B true TWI297174B (enExample) | 2008-05-21 |
Family
ID=35541764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094123062A TW200614344A (en) | 2004-07-07 | 2005-07-07 | Device manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7459264B2 (enExample) |
| JP (1) | JP2006024692A (enExample) |
| CN (1) | CN100413027C (enExample) |
| TW (1) | TW200614344A (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2005122218A1 (ja) * | 2004-06-09 | 2005-12-22 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP5154006B2 (ja) * | 2004-12-06 | 2013-02-27 | 株式会社Ｓｏｋｕｄｏ | 基板処理装置 |
| JP4718893B2 (ja) * | 2005-05-13 | 2011-07-06 | 株式会社東芝 | パターン形成方法 |
| US7927779B2 (en) | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
| US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
| US8383322B2 (en) | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
| US7993808B2 (en) | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
| JP2007142181A (ja) * | 2005-11-18 | 2007-06-07 | Toshiba Corp | 基板処理方法及びリンス装置 |
| JP2007288108A (ja) * | 2006-04-20 | 2007-11-01 | Nikon Corp | デバイス製造方法 |
| US20080020324A1 (en) * | 2006-07-19 | 2008-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction with top coater removal |
| JP4807749B2 (ja) * | 2006-09-15 | 2011-11-02 | 東京エレクトロン株式会社 | 露光・現像処理方法 |
| US8518628B2 (en) | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface switchable photoresist |
| GB0619042D0 (en) * | 2006-09-27 | 2006-11-08 | Imec Inter Uni Micro Electr | Methods and systems for water uptake control |
| GB0619043D0 (en) * | 2006-09-27 | 2006-11-08 | Imec Inter Uni Micro Electr | Immersion lithographic processing using an acid component source for reducing watermarks |
| EP1956432A1 (en) * | 2007-02-12 | 2008-08-13 | Interuniversitair Microelektronica Centrum | Methods and systems for improved immersion lithographic processing |
| TWI826650B (zh) * | 2012-11-26 | 2023-12-21 | 美商應用材料股份有限公司 | 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理 |
| WO2018216476A1 (ja) * | 2017-05-24 | 2018-11-29 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0876382A (ja) * | 1994-09-08 | 1996-03-22 | Oki Electric Ind Co Ltd | レジストパターンの形成方法 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| JP3189773B2 (ja) * | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP3979553B2 (ja) * | 1998-06-12 | 2007-09-19 | 東京応化工業株式会社 | 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料 |
| JP4564186B2 (ja) * | 2001-02-16 | 2010-10-20 | 株式会社東芝 | パターン形成方法 |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| KR100393228B1 (ko) | 2001-07-26 | 2003-07-31 | 삼성전자주식회사 | 자기 정렬 무노광 패턴 형성 프로세스를 이용한 플래쉬메모리 소자의 제조 방법 |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| CN1751272A (zh) * | 2003-02-20 | 2006-03-22 | 东京応化工业株式会社 | 液浸曝光工序用抗蚀保护膜形成用材料、复合膜及抗蚀图案形成方法 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| JP4265766B2 (ja) * | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
| JP4333281B2 (ja) | 2003-08-28 | 2009-09-16 | 株式会社ニコン | 液浸光学系及び液体媒体並びに露光装置 |
| JP4168880B2 (ja) | 2003-08-29 | 2008-10-22 | 株式会社ニコン | 液浸用溶液 |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-07-07 JP JP2004200610A patent/JP2006024692A/ja active Pending
-
2005
- 2005-07-06 CN CNB2005100826421A patent/CN100413027C/zh not_active Expired - Fee Related
- 2005-07-07 US US11/175,275 patent/US7459264B2/en not_active Expired - Fee Related
- 2005-07-07 TW TW094123062A patent/TW200614344A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7459264B2 (en) | 2008-12-02 |
| CN100413027C (zh) | 2008-08-20 |
| TW200614344A (en) | 2006-05-01 |
| US20060008747A1 (en) | 2006-01-12 |
| JP2006024692A (ja) | 2006-01-26 |
| CN1719580A (zh) | 2006-01-11 |
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