CN100413027C - 元件的制造方法 - Google Patents

元件的制造方法 Download PDF

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Publication number
CN100413027C
CN100413027C CNB2005100826421A CN200510082642A CN100413027C CN 100413027 C CN100413027 C CN 100413027C CN B2005100826421 A CNB2005100826421 A CN B2005100826421A CN 200510082642 A CN200510082642 A CN 200510082642A CN 100413027 C CN100413027 C CN 100413027C
Authority
CN
China
Prior art keywords
resist film
resist
film
photomask
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100826421A
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English (en)
Chinese (zh)
Other versions
CN1719580A (zh
Inventor
河村大辅
三本木晶子
佐藤隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1719580A publication Critical patent/CN1719580A/zh
Application granted granted Critical
Publication of CN100413027C publication Critical patent/CN100413027C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CNB2005100826421A 2004-07-07 2005-07-06 元件的制造方法 Expired - Fee Related CN100413027C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004200610A JP2006024692A (ja) 2004-07-07 2004-07-07 レジストパターン形成方法
JP200610/2004 2004-07-07

Publications (2)

Publication Number Publication Date
CN1719580A CN1719580A (zh) 2006-01-11
CN100413027C true CN100413027C (zh) 2008-08-20

Family

ID=35541764

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100826421A Expired - Fee Related CN100413027C (zh) 2004-07-07 2005-07-06 元件的制造方法

Country Status (4)

Country Link
US (1) US7459264B2 (enExample)
JP (1) JP2006024692A (enExample)
CN (1) CN100413027C (enExample)
TW (1) TW200614344A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP5154006B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4718893B2 (ja) * 2005-05-13 2011-07-06 株式会社東芝 パターン形成方法
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007288108A (ja) * 2006-04-20 2007-11-01 Nikon Corp デバイス製造方法
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
JP4807749B2 (ja) * 2006-09-15 2011-11-02 東京エレクトロン株式会社 露光・現像処理方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
GB0619042D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Methods and systems for water uptake control
GB0619043D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Immersion lithographic processing using an acid component source for reducing watermarks
EP1956432A1 (en) * 2007-02-12 2008-08-13 Interuniversitair Microelektronica Centrum Methods and systems for improved immersion lithographic processing
TWI826650B (zh) * 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
WO2018216476A1 (ja) * 2017-05-24 2018-11-29 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0876382A (ja) * 1994-09-08 1996-03-22 Oki Electric Ind Co Ltd レジストパターンの形成方法
CN1222756A (zh) * 1998-01-09 1999-07-14 三菱电机株式会社 半导体器件及其制造方法
US6136505A (en) * 1998-06-12 2000-10-24 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film
CN1371121A (zh) * 2001-02-16 2002-09-25 株式会社东芝 图形形成方法
CN1751272A (zh) * 2003-02-20 2006-03-22 东京応化工业株式会社 液浸曝光工序用抗蚀保护膜形成用材料、复合膜及抗蚀图案形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
KR100393228B1 (ko) 2001-07-26 2003-07-31 삼성전자주식회사 자기 정렬 무노광 패턴 형성 프로세스를 이용한 플래쉬메모리 소자의 제조 방법
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JP4333281B2 (ja) 2003-08-28 2009-09-16 株式会社ニコン 液浸光学系及び液体媒体並びに露光装置
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0876382A (ja) * 1994-09-08 1996-03-22 Oki Electric Ind Co Ltd レジストパターンの形成方法
CN1222756A (zh) * 1998-01-09 1999-07-14 三菱电机株式会社 半导体器件及其制造方法
US6136505A (en) * 1998-06-12 2000-10-24 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film
CN1371121A (zh) * 2001-02-16 2002-09-25 株式会社东芝 图形形成方法
CN1751272A (zh) * 2003-02-20 2006-03-22 东京応化工业株式会社 液浸曝光工序用抗蚀保护膜形成用材料、复合膜及抗蚀图案形成方法

Also Published As

Publication number Publication date
US7459264B2 (en) 2008-12-02
TW200614344A (en) 2006-05-01
TWI297174B (enExample) 2008-05-21
US20060008747A1 (en) 2006-01-12
JP2006024692A (ja) 2006-01-26
CN1719580A (zh) 2006-01-11

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080820

Termination date: 20120706