TW200614344A - Device manufacturing method - Google Patents

Device manufacturing method

Info

Publication number
TW200614344A
TW200614344A TW094123062A TW94123062A TW200614344A TW 200614344 A TW200614344 A TW 200614344A TW 094123062 A TW094123062 A TW 094123062A TW 94123062 A TW94123062 A TW 94123062A TW 200614344 A TW200614344 A TW 200614344A
Authority
TW
Taiwan
Prior art keywords
resist film
substrate
mask pattern
device manufacturing
photo mask
Prior art date
Application number
TW094123062A
Other languages
English (en)
Chinese (zh)
Other versions
TWI297174B (enExample
Inventor
Daisuke Kawamura
Akiko Mimotogi
Takashi Sato
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200614344A publication Critical patent/TW200614344A/zh
Application granted granted Critical
Publication of TWI297174B publication Critical patent/TWI297174B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW094123062A 2004-07-07 2005-07-07 Device manufacturing method TW200614344A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004200610A JP2006024692A (ja) 2004-07-07 2004-07-07 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200614344A true TW200614344A (en) 2006-05-01
TWI297174B TWI297174B (enExample) 2008-05-21

Family

ID=35541764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123062A TW200614344A (en) 2004-07-07 2005-07-07 Device manufacturing method

Country Status (4)

Country Link
US (1) US7459264B2 (enExample)
JP (1) JP2006024692A (enExample)
CN (1) CN100413027C (enExample)
TW (1) TW200614344A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP5154006B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4718893B2 (ja) * 2005-05-13 2011-07-06 株式会社東芝 パターン形成方法
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007288108A (ja) * 2006-04-20 2007-11-01 Nikon Corp デバイス製造方法
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
JP4807749B2 (ja) * 2006-09-15 2011-11-02 東京エレクトロン株式会社 露光・現像処理方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
GB0619042D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Methods and systems for water uptake control
GB0619043D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Immersion lithographic processing using an acid component source for reducing watermarks
EP1956432A1 (en) * 2007-02-12 2008-08-13 Interuniversitair Microelektronica Centrum Methods and systems for improved immersion lithographic processing
TWI826650B (zh) * 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
WO2018216476A1 (ja) * 2017-05-24 2018-11-29 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0876382A (ja) * 1994-09-08 1996-03-22 Oki Electric Ind Co Ltd レジストパターンの形成方法
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP3979553B2 (ja) * 1998-06-12 2007-09-19 東京応化工業株式会社 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
KR100393228B1 (ko) 2001-07-26 2003-07-31 삼성전자주식회사 자기 정렬 무노광 패턴 형성 프로세스를 이용한 플래쉬메모리 소자의 제조 방법
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN1751272A (zh) * 2003-02-20 2006-03-22 东京応化工业株式会社 液浸曝光工序用抗蚀保护膜形成用材料、复合膜及抗蚀图案形成方法
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JP4333281B2 (ja) 2003-08-28 2009-09-16 株式会社ニコン 液浸光学系及び液体媒体並びに露光装置
JP4168880B2 (ja) 2003-08-29 2008-10-22 株式会社ニコン 液浸用溶液
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
US7459264B2 (en) 2008-12-02
CN100413027C (zh) 2008-08-20
TWI297174B (enExample) 2008-05-21
US20060008747A1 (en) 2006-01-12
JP2006024692A (ja) 2006-01-26
CN1719580A (zh) 2006-01-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees