TWI294637B - Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method - Google Patents
Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method Download PDFInfo
- Publication number
- TWI294637B TWI294637B TW092110006A TW92110006A TWI294637B TW I294637 B TWI294637 B TW I294637B TW 092110006 A TW092110006 A TW 092110006A TW 92110006 A TW92110006 A TW 92110006A TW I294637 B TWI294637 B TW I294637B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- electrode
- dielectric
- collet
- dielectric member
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 34
- 239000000306 component Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 25
- 239000002241 glass-ceramic Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 5
- 239000008358 core component Substances 0.000 claims description 4
- 239000011265 semifinished product Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
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- 238000001816 cooling Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000005342 ion exchange Methods 0.000 claims 2
- 239000006112 glass ceramic composition Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000002585 base Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000001459 lithography Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 239000006094 Zerodur Substances 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- 239000003973 paint Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- -1 projection systems Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000002320 enamel (paints) Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02253073A EP1359466A1 (en) | 2002-05-01 | 2002-05-01 | Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200410303A TW200410303A (en) | 2004-06-16 |
TWI294637B true TWI294637B (en) | 2008-03-11 |
Family
ID=28799734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092110006A TWI294637B (en) | 2002-05-01 | 2003-04-29 | Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US6864957B2 (ko) |
EP (1) | EP1359466A1 (ko) |
JP (1) | JP3851891B2 (ko) |
KR (1) | KR100528982B1 (ko) |
CN (1) | CN100395661C (ko) |
DE (1) | DE60336189D1 (ko) |
SG (1) | SG106683A1 (ko) |
TW (1) | TWI294637B (ko) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7432514B2 (en) * | 2002-03-26 | 2008-10-07 | International Business Machines Corporation | Method and apparatus for surface potential reflection electron mask lithography |
SG125948A1 (en) * | 2003-03-31 | 2006-10-30 | Asml Netherlands Bv | Supporting structure for use in a lithographic apparatus |
US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8105457B2 (en) * | 2003-12-22 | 2012-01-31 | Asml Netherlands B.V. | Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby |
TWI242255B (en) * | 2004-07-21 | 2005-10-21 | Touch Micro System Tech | Wafer carrier |
US7586059B2 (en) * | 2004-08-27 | 2009-09-08 | Infineon Technologies Ag | Lithography mask substrate labeling system |
FR2875054B1 (fr) * | 2004-09-08 | 2006-12-01 | Cit Alcatel | Support de substrats minces |
TWI271815B (en) * | 2004-11-30 | 2007-01-21 | Sanyo Electric Co | Method for processing stuck object and electrostatic sticking method |
WO2006084641A2 (en) | 2005-02-10 | 2006-08-17 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
KR100722932B1 (ko) * | 2005-09-26 | 2007-05-30 | 삼성전자주식회사 | 온도 감지 장치를 구비하는 정전척 및 이를 구비하는 노광장비 및 포토마스크 표면의 온도를 감지하는 방법 |
US20070139855A1 (en) * | 2005-12-21 | 2007-06-21 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing an electrostatic clamp for a lithographic apparatus |
US7626681B2 (en) * | 2005-12-28 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus and method |
US7978308B2 (en) * | 2006-05-15 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4908089B2 (ja) * | 2006-07-13 | 2012-04-04 | コバレントマテリアル株式会社 | 静電チャックおよびその製造方法 |
JP5031292B2 (ja) * | 2006-07-27 | 2012-09-19 | コバレントマテリアル株式会社 | 静電チャック |
JP5030260B2 (ja) * | 2006-07-27 | 2012-09-19 | コバレントマテリアル株式会社 | 静電チャック |
KR100803834B1 (ko) * | 2006-08-21 | 2008-02-14 | 프라임 뷰 인터내셔널 코오포레이션 리미티드 | 포토레지스트 회전 도포기의 척 |
US8760621B2 (en) * | 2007-03-12 | 2014-06-24 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP4757839B2 (ja) * | 2007-05-24 | 2011-08-24 | 太平洋セメント株式会社 | ガラス質静電チャック及びその製造方法 |
US8013981B2 (en) | 2007-06-14 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100902614B1 (ko) * | 2007-07-16 | 2009-06-11 | 세메스 주식회사 | 반도체 제조 장치 |
JP5024996B2 (ja) * | 2007-07-24 | 2012-09-12 | コバレントマテリアル株式会社 | ガラス製静電チャックの製造方法 |
US20090075012A1 (en) * | 2007-09-13 | 2009-03-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102009011863B4 (de) * | 2009-03-05 | 2024-02-08 | Asml Netherlands B.V. | Leichtgewicht-Trägerstruktur, insbesondere für optische Bauteile, Verfahren zu deren Herstellung und Verwendung der Trägerstruktur |
US9112300B2 (en) * | 2009-04-20 | 2015-08-18 | Asml Netherlands B.V. | Electrical connector for lithographic projection apparatus |
NL2004872A (en) * | 2009-06-18 | 2010-12-20 | Asml Netherlands Bv | Lithographic projection apparatus. |
CN102044466B (zh) * | 2009-10-12 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种静电卡盘及其残余电荷的消除方法 |
US8767174B2 (en) * | 2010-02-18 | 2014-07-01 | Nikon Corporation | Temperature-controlled holding devices for planar articles |
DE102010039927A1 (de) * | 2010-08-30 | 2012-03-01 | Carl Zeiss Smt Gmbh | Substrat für Spiegel für die EUV-Lithographie |
JP5989677B2 (ja) * | 2011-02-18 | 2016-09-14 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板サポートおよびリソグラフィ装置 |
EP2555234B1 (en) | 2011-08-02 | 2020-08-19 | ASML Holding N.V. | Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp |
CN103782365B (zh) * | 2011-09-05 | 2016-10-05 | 株式会社东芝 | 掩模版吸盘洁净器及掩模版吸盘清洁方法 |
EP2764408B1 (en) | 2011-10-06 | 2019-08-21 | ASML Netherlands B.V. | Chuck, lithography apparatus and method of using a chuck |
WO2013113569A1 (en) | 2012-02-03 | 2013-08-08 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
CN104520770B (zh) * | 2012-04-23 | 2017-01-18 | Asml荷兰有限公司 | 静电夹持装置、光刻设备和方法 |
JP5739376B2 (ja) * | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | モールド作製用ブランクおよびモールドの製造方法 |
DE102012212898A1 (de) * | 2012-07-24 | 2014-01-30 | Carl Zeiss Smt Gmbh | Spiegelanordnung für eine EUV-Projektionsbelichtungsanlage, Verfahren zum Betreiben derselben, sowie EUV-Projektionsbelichtungsanlage |
US8765582B2 (en) * | 2012-09-04 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for extreme ultraviolet electrostatic chuck with reduced clamp effect |
NL2012204A (en) * | 2013-02-07 | 2014-12-18 | Asml Holding Nv | Lithographic apparatus and method. |
TWI656596B (zh) * | 2014-08-26 | 2019-04-11 | 荷蘭商Asml控股公司 | 靜電夾具及其製造方法 |
JP6420900B2 (ja) | 2014-10-23 | 2018-11-07 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置用の支持テーブル、基板をロードする方法、リソグラフィ装置及びデバイス製造方法 |
US9817208B1 (en) * | 2016-09-20 | 2017-11-14 | Applied Materials Israel Ltd. | Integrated chuck |
US9805906B1 (en) * | 2016-09-20 | 2017-10-31 | Applied Materials Israel, Ltd. | Mirror support module, a kit and a scanning electron microscope |
US10923379B2 (en) * | 2017-02-15 | 2021-02-16 | Lam Research Corporation | Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure |
KR102456532B1 (ko) | 2017-11-20 | 2022-10-18 | 에이에스엠엘 네델란즈 비.브이. | 기판 홀더, 기판 지지체, 및 기판을 클램핑 시스템에 클램핑시키는 방법 |
US10722925B2 (en) * | 2017-12-04 | 2020-07-28 | Suss Micro Tec Photomask Equipment Gmbh & Co Kg | Treatment head, treatment system and method for treating a local surface area of a substrate |
KR102427823B1 (ko) * | 2018-06-11 | 2022-07-29 | 캐논 톡키 가부시키가이샤 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
CN110911330A (zh) * | 2018-09-14 | 2020-03-24 | 东莞市中麒光电技术有限公司 | 一种通过转移晶圆批量转移、固定led芯片的吸盘及方法 |
DE102019101657A1 (de) | 2019-01-23 | 2020-07-23 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung |
WO2020216571A1 (en) * | 2019-04-25 | 2020-10-29 | Asml Netherlands B.V. | A substrate holder for use in a lithographic apparatus |
CN111128845B (zh) * | 2019-12-16 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 应用于薄膜沉积装置的托盘 |
KR102288309B1 (ko) * | 2020-02-12 | 2021-08-10 | 한국광기술원 | 마이크로 led 디스플레이 제조방법 |
DE102020104907A1 (de) | 2020-02-25 | 2021-08-26 | Berliner Glas GmbH | Verfahren zur Herstellung eines Bauelements durch atomares Diffusionsbonden |
US20220308465A1 (en) * | 2021-03-26 | 2022-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for removing contamination |
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US5835333A (en) * | 1995-10-30 | 1998-11-10 | Lam Research Corporation | Negative offset bipolar electrostatic chucks |
US6108189A (en) * | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
US5954982A (en) * | 1997-02-12 | 1999-09-21 | Nikon Corporation | Method and apparatus for efficiently heating semiconductor wafers or reticles |
JP2000068198A (ja) * | 1998-03-31 | 2000-03-03 | Asm Lithography Bv | 改良基板ホルダ付きリソグラフィ―的投影装置 |
JP2000286189A (ja) * | 1999-03-31 | 2000-10-13 | Nikon Corp | 露光装置および露光方法ならびにデバイス製造方法 |
JP3805134B2 (ja) * | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | 絶縁性基板吸着用静電チャック |
US6368942B1 (en) * | 2000-03-31 | 2002-04-09 | Euv Llc | Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer |
JP4106858B2 (ja) * | 2000-06-26 | 2008-06-25 | 松下電器産業株式会社 | スピーカユニット |
US6542224B2 (en) * | 2000-10-13 | 2003-04-01 | Corning Incorporated | Silica-based light-weight EUV lithography stages |
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2002
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- 2003-04-29 US US10/424,978 patent/US6864957B2/en not_active Expired - Lifetime
- 2003-04-29 DE DE60336189T patent/DE60336189D1/de not_active Expired - Lifetime
- 2003-04-29 KR KR10-2003-0027346A patent/KR100528982B1/ko active IP Right Grant
- 2003-04-29 SG SG200302379A patent/SG106683A1/en unknown
- 2003-04-29 CN CNB031384528A patent/CN100395661C/zh not_active Expired - Lifetime
- 2003-04-30 JP JP2003160099A patent/JP3851891B2/ja not_active Expired - Lifetime
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JP2004047982A (ja) | 2004-02-12 |
SG106683A1 (en) | 2004-10-29 |
CN100395661C (zh) | 2008-06-18 |
KR100528982B1 (ko) | 2005-11-16 |
TW200410303A (en) | 2004-06-16 |
JP3851891B2 (ja) | 2006-11-29 |
CN1456933A (zh) | 2003-11-19 |
DE60336189D1 (de) | 2011-04-14 |
EP1359466A1 (en) | 2003-11-05 |
KR20030086912A (ko) | 2003-11-12 |
US20040012767A1 (en) | 2004-01-22 |
US6864957B2 (en) | 2005-03-08 |
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