TWI286380B - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit device Download PDFInfo
- Publication number
- TWI286380B TWI286380B TW092114300A TW92114300A TWI286380B TW I286380 B TWI286380 B TW I286380B TW 092114300 A TW092114300 A TW 092114300A TW 92114300 A TW92114300 A TW 92114300A TW I286380 B TWI286380 B TW I286380B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- power supply
- potential side
- side power
- clamp
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- 230000015556 catabolic process Effects 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 238000010248 power generation Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/18—Peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002168680A JP4043855B2 (ja) | 2002-06-10 | 2002-06-10 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402140A TW200402140A (en) | 2004-02-01 |
| TWI286380B true TWI286380B (en) | 2007-09-01 |
Family
ID=29706811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092114300A TWI286380B (en) | 2002-06-10 | 2003-05-27 | Semiconductor integrated circuit device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6828842B2 (https=) |
| JP (1) | JP4043855B2 (https=) |
| KR (1) | KR20030095349A (https=) |
| CN (1) | CN1326242C (https=) |
| TW (1) | TWI286380B (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100569558B1 (ko) * | 2003-11-10 | 2006-04-10 | 주식회사 하이닉스반도체 | 전원 제어 기능을 갖는 불휘발성 강유전체 메모리 장치 |
| US7098717B2 (en) * | 2004-06-25 | 2006-08-29 | Altera Corporation | Gate triggered ESD clamp |
| JP4942007B2 (ja) | 2004-10-25 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| US7859301B2 (en) * | 2007-04-30 | 2010-12-28 | Altera Corporation | Power regulator circuitry for programmable logic device memory elements |
| US7692975B2 (en) * | 2008-05-09 | 2010-04-06 | Micron Technology, Inc. | System and method for mitigating reverse bias leakage |
| JP2009283610A (ja) * | 2008-05-21 | 2009-12-03 | Elpida Memory Inc | Ｅｓｄ保護回路 |
| DE102008034109B4 (de) * | 2008-07-21 | 2016-10-13 | Dspace Digital Signal Processing And Control Engineering Gmbh | Schaltung zur Nachbildung einer elektrischen Last |
| US8238067B2 (en) * | 2008-12-11 | 2012-08-07 | Ati Technologies Ulc | Electrostatic discharge circuit and method |
| JP2011228372A (ja) * | 2010-04-16 | 2011-11-10 | Toshiba Corp | 半導体集積回路装置 |
| TWI422008B (zh) | 2010-05-24 | 2014-01-01 | Au Optronics Corp | 靜電防護電路及採用此種靜電防護電路之顯示裝置 |
| CN101859764B (zh) * | 2010-06-03 | 2012-02-08 | 友达光电股份有限公司 | 静电防护电路及采用此种静电防护电路的显示装置 |
| JP5656658B2 (ja) * | 2011-01-14 | 2015-01-21 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| JP2013055102A (ja) | 2011-09-01 | 2013-03-21 | Sony Corp | 半導体集積回路及び保護回路 |
| JP2014229624A (ja) | 2013-05-17 | 2014-12-08 | ソニー株式会社 | 半導体装置および電子機器 |
| JP5710706B2 (ja) * | 2013-07-29 | 2015-04-30 | アギア システムズ エルエルシーＡｇｅｒｅ Ｓｙｓｔｅｍｓ ＬＬＣ | 静電気放電保護回路 |
| JP2016035958A (ja) | 2014-08-01 | 2016-03-17 | ソニー株式会社 | 保護素子、保護回路及び半導体集積回路 |
| CN105990351A (zh) * | 2015-02-26 | 2016-10-05 | 杭州海存信息技术有限公司 | 分离的三维纵向存储器 |
| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| JP6623139B2 (ja) | 2016-10-24 | 2019-12-18 | 株式会社東芝 | Ｅｓｄ保護回路 |
| US10861845B2 (en) * | 2016-12-06 | 2020-12-08 | Analog Devices, Inc. | Active interface resistance modulation switch |
| US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
| TWI735909B (zh) * | 2019-07-10 | 2021-08-11 | 瑞昱半導體股份有限公司 | 靜電放電保護電路以及運作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3229809B2 (ja) * | 1995-08-31 | 2001-11-19 | 三洋電機株式会社 | 半導体装置 |
| CN1075667C (zh) * | 1996-04-19 | 2001-11-28 | 松下电器产业株式会社 | 半导体集成电路及采用该电路的系统 |
| JPH10243639A (ja) * | 1997-02-27 | 1998-09-11 | Hitachi Ltd | 電源回路 |
| US5907464A (en) | 1997-03-24 | 1999-05-25 | Intel Corporation | MOSFET-based power supply clamps for electrostatic discharge protection of integrated circuits |
| JPH10303314A (ja) | 1997-04-24 | 1998-11-13 | Toshiba Microelectron Corp | 半導体集積回路 |
| JPH11243639A (ja) | 1998-02-24 | 1999-09-07 | Asahi Kasei Micro Syst Co Ltd | 半導体回路 |
| US6400546B1 (en) * | 1999-09-02 | 2002-06-04 | Ati International Srl | I/O pad voltage protection circuit and method |
| US6181193B1 (en) * | 1999-10-08 | 2001-01-30 | International Business Machines Corporation | Using thick-oxide CMOS devices to interface high voltage integrated circuits |
| US6462601B1 (en) * | 2001-05-11 | 2002-10-08 | Faraday Technology Corp. | Electrostatic discharge protection circuit layout |
| JP2002344251A (ja) * | 2001-05-22 | 2002-11-29 | Oki Electric Ind Co Ltd | オフリーク電流キャンセル回路 |
-
2002
- 2002-06-10 JP JP2002168680A patent/JP4043855B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-22 US US10/443,035 patent/US6828842B2/en not_active Expired - Fee Related
- 2003-05-27 TW TW092114300A patent/TWI286380B/zh not_active IP Right Cessation
- 2003-06-09 CN CNB031424384A patent/CN1326242C/zh not_active Expired - Fee Related
- 2003-06-10 KR KR10-2003-0037075A patent/KR20030095349A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN1467844A (zh) | 2004-01-14 |
| CN1326242C (zh) | 2007-07-11 |
| KR20030095349A (ko) | 2003-12-18 |
| JP4043855B2 (ja) | 2008-02-06 |
| US6828842B2 (en) | 2004-12-07 |
| TW200402140A (en) | 2004-02-01 |
| JP2004014929A (ja) | 2004-01-15 |
| US20030227304A1 (en) | 2003-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |