TWI284916B - Method and device for producing extreme ultraviolet radiation and soft x-ray radiation - Google Patents

Method and device for producing extreme ultraviolet radiation and soft x-ray radiation Download PDF

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Publication number
TWI284916B
TWI284916B TW091104540A TW91104540A TWI284916B TW I284916 B TWI284916 B TW I284916B TW 091104540 A TW091104540 A TW 091104540A TW 91104540 A TW91104540 A TW 91104540A TW I284916 B TWI284916 B TW I284916B
Authority
TW
Taiwan
Prior art keywords
electrode
trigger
plasma
voltage
triggering
Prior art date
Application number
TW091104540A
Other languages
English (en)
Chinese (zh)
Inventor
Jurgen Klein
Willi Neff
Stefan Seiwert
Klaus Bergmann
Joseph Pankert
Original Assignee
Fraunhofer Ges Forschung
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung, Koninkl Philips Electronics Nv filed Critical Fraunhofer Ges Forschung
Application granted granted Critical
Publication of TWI284916B publication Critical patent/TWI284916B/zh

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
TW091104540A 2001-04-06 2002-03-12 Method and device for producing extreme ultraviolet radiation and soft x-ray radiation TWI284916B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10117377 2001-04-06
DE10139677A DE10139677A1 (de) 2001-04-06 2001-08-11 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
EP01125762A EP1248499B1 (de) 2001-04-06 2001-10-29 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung

Publications (1)

Publication Number Publication Date
TWI284916B true TWI284916B (en) 2007-08-01

Family

ID=26009027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091104540A TWI284916B (en) 2001-04-06 2002-03-12 Method and device for producing extreme ultraviolet radiation and soft x-ray radiation

Country Status (8)

Country Link
US (1) US7126143B2 (cg-RX-API-DMAC7.html)
EP (2) EP1248499B1 (cg-RX-API-DMAC7.html)
JP (1) JP4330344B2 (cg-RX-API-DMAC7.html)
CN (1) CN1311716C (cg-RX-API-DMAC7.html)
AT (1) ATE469533T1 (cg-RX-API-DMAC7.html)
DE (3) DE10139677A1 (cg-RX-API-DMAC7.html)
TW (1) TWI284916B (cg-RX-API-DMAC7.html)
WO (1) WO2002082872A1 (cg-RX-API-DMAC7.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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DE10238096B3 (de) * 2002-08-21 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe
US6770895B2 (en) 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10260458B3 (de) 2002-12-19 2004-07-22 Xtreme Technologies Gmbh Strahlungsquelle mit hoher durchschnittlicher EUV-Strahlungsleistung
JP2004226244A (ja) * 2003-01-23 2004-08-12 Ushio Inc 極端紫外光源および半導体露光装置
DE10310623B8 (de) 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
US6919573B2 (en) 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
DE10336273A1 (de) * 2003-08-07 2005-03-10 Fraunhofer Ges Forschung Vorrichtung zur Erzeugung von EUV- und weicher Röntgenstrahlung
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
JP5503108B2 (ja) 2004-11-29 2014-05-28 コーニンクレッカ フィリップス エヌ ヴェ 約1nmから約30nmの波長範囲の放射線を発生させる方法および機器、ならびにリソグラフィー装置
DE102004058500A1 (de) 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
DE102005025624B4 (de) * 2005-06-01 2010-03-18 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas
KR20080019708A (ko) * 2005-06-14 2008-03-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 단락에 대한 방사원 보호 방법
DE102006022823B4 (de) * 2006-05-12 2010-03-25 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung auf Basis eines Gasentladungsplasmas
US7687788B2 (en) * 2007-07-16 2010-03-30 Asml Netherlands B.V. Debris prevention system, radiation system, and lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US20090134129A1 (en) * 2007-11-27 2009-05-28 General Electric Company Ablative plasma gun apparatus and system
DE102007060807B4 (de) * 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
CN102119583B (zh) * 2008-07-28 2013-09-11 皇家飞利浦电子股份有限公司 用于产生euv辐射或软x射线的方法和设备
US20110109226A1 (en) * 2009-11-06 2011-05-12 Agilent Technologies, Inc. Microplasma device with cavity for vacuum ultraviolet irradiation of gases and methods of making and using the same
CN102625557A (zh) * 2012-03-30 2012-08-01 大连理工大学 大气压裸电极冷等离子体射流发生装置
KR101542333B1 (ko) * 2014-12-26 2015-08-05 한국과학기술연구원 다중 가스셀 모듈을 이용한 극자외선 빔 생성장치
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
CN114442437B (zh) * 2020-10-30 2024-05-17 上海宏澎能源科技有限公司 光源装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US4201921A (en) * 1978-07-24 1980-05-06 International Business Machines Corporation Electron beam-capillary plasma flash x-ray device
FR2551614B1 (fr) * 1983-09-02 1986-03-21 Centre Nat Rech Scient Source intense de rayons x mous, a compression cylindrique de plasma, ce plasma etant obtenu a partir d'une feuille explosee
DE3332711A1 (de) * 1983-09-10 1985-03-28 Fa. Carl Zeiss, 7920 Heidenheim Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich
EP0411001A1 (de) * 1988-04-26 1991-02-06 Siemens Aktiengesellschaft Nach dem te-prinzip arbeitender gaslaser mit einem anregungskreis und einem vielkanal-pseudofunken-schalter
DE19753696A1 (de) * 1997-12-03 1999-06-17 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung
DE19962160C2 (de) * 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
TW518913B (en) * 2000-07-03 2003-01-21 Asml Netherlands Bv Radiation source, lithographic apparatus, and semiconductor device manufacturing method
EP1300056A2 (en) * 2000-07-04 2003-04-09 Lambda Physik AG Method of producing short-wave radiation from a gas-discharge plasma and device for implementing it
RU2206186C2 (ru) 2000-07-04 2003-06-10 Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации

Also Published As

Publication number Publication date
ATE469533T1 (de) 2010-06-15
CN1311716C (zh) 2007-04-18
EP1248499B1 (de) 2010-05-26
US7126143B2 (en) 2006-10-24
DE50115489D1 (de) 2010-07-08
JP2004530269A (ja) 2004-09-30
WO2002082872A1 (de) 2002-10-17
JP4330344B2 (ja) 2009-09-16
EP1248499A1 (de) 2002-10-09
US20040183037A1 (en) 2004-09-23
CN1531840A (zh) 2004-09-22
DE10291549D2 (de) 2004-04-15
DE10139677A1 (de) 2002-10-17
EP1374650A1 (de) 2004-01-02

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