JP4330344B2 - 超紫外線及び軟ｘ線の発生方法及び装置 - Google Patents

超紫外線及び軟ｘ線の発生方法及び装置 Download PDF

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Publication number
JP4330344B2
JP4330344B2 JP2002580685A JP2002580685A JP4330344B2 JP 4330344 B2 JP4330344 B2 JP 4330344B2 JP 2002580685 A JP2002580685 A JP 2002580685A JP 2002580685 A JP2002580685 A JP 2002580685A JP 4330344 B2 JP4330344 B2 JP 4330344B2
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electrode
trigger
ignition
voltage
plasma
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Japanese (ja)
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JP2004530269A5 (cg-RX-API-DMAC7.html
JP2004530269A (ja
Inventor
クライン ユルゲン
ネフ ヴィリー
ザイヴェルト シュテファン
ベルクマン クラウス
パンケルト ヨーゼフ
レーケン ミヒャエル
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
JP2002580685A 2001-04-06 2002-03-23 超紫外線及び軟ｘ線の発生方法及び装置 Expired - Fee Related JP4330344B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10117377 2001-04-06
DE10139677A DE10139677A1 (de) 2001-04-06 2001-08-11 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
EP01125762A EP1248499B1 (de) 2001-04-06 2001-10-29 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung
PCT/DE2002/001085 WO2002082872A1 (de) 2001-04-06 2002-03-23 Verfahren und vorrichtung zum erzeugen von extrem ultravioletter strahlung und weicher röntgenstrahlung

Publications (3)

Publication Number Publication Date
JP2004530269A JP2004530269A (ja) 2004-09-30
JP2004530269A5 JP2004530269A5 (cg-RX-API-DMAC7.html) 2008-09-18
JP4330344B2 true JP4330344B2 (ja) 2009-09-16

Family

ID=26009027

Family Applications (1)

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JP2002580685A Expired - Fee Related JP4330344B2 (ja) 2001-04-06 2002-03-23 超紫外線及び軟ｘ線の発生方法及び装置

Country Status (8)

Country Link
US (1) US7126143B2 (cg-RX-API-DMAC7.html)
EP (2) EP1248499B1 (cg-RX-API-DMAC7.html)
JP (1) JP4330344B2 (cg-RX-API-DMAC7.html)
CN (1) CN1311716C (cg-RX-API-DMAC7.html)
AT (1) ATE469533T1 (cg-RX-API-DMAC7.html)
DE (3) DE10139677A1 (cg-RX-API-DMAC7.html)
TW (1) TWI284916B (cg-RX-API-DMAC7.html)
WO (1) WO2002082872A1 (cg-RX-API-DMAC7.html)

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DE10238096B3 (de) * 2002-08-21 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe
US6770895B2 (en) 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10260458B3 (de) 2002-12-19 2004-07-22 Xtreme Technologies Gmbh Strahlungsquelle mit hoher durchschnittlicher EUV-Strahlungsleistung
JP2004226244A (ja) * 2003-01-23 2004-08-12 Ushio Inc 極端紫外光源および半導体露光装置
DE10310623B8 (de) 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
US6919573B2 (en) 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
DE10336273A1 (de) * 2003-08-07 2005-03-10 Fraunhofer Ges Forschung Vorrichtung zur Erzeugung von EUV- und weicher Röntgenstrahlung
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
JP5503108B2 (ja) 2004-11-29 2014-05-28 コーニンクレッカ フィリップス エヌ ヴェ 約１ｎｍから約３０ｎｍの波長範囲の放射線を発生させる方法および機器、ならびにリソグラフィー装置
DE102004058500A1 (de) 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
DE102005025624B4 (de) * 2005-06-01 2010-03-18 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas
KR20080019708A (ko) * 2005-06-14 2008-03-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 단락에 대한 방사원 보호 방법
DE102006022823B4 (de) * 2006-05-12 2010-03-25 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung auf Basis eines Gasentladungsplasmas
US7687788B2 (en) * 2007-07-16 2010-03-30 Asml Netherlands B.V. Debris prevention system, radiation system, and lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US20090134129A1 (en) * 2007-11-27 2009-05-28 General Electric Company Ablative plasma gun apparatus and system
DE102007060807B4 (de) * 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
CN102119583B (zh) * 2008-07-28 2013-09-11 皇家飞利浦电子股份有限公司 用于产生euv辐射或软x射线的方法和设备
US20110109226A1 (en) * 2009-11-06 2011-05-12 Agilent Technologies, Inc. Microplasma device with cavity for vacuum ultraviolet irradiation of gases and methods of making and using the same
CN102625557A (zh) * 2012-03-30 2012-08-01 大连理工大学 大气压裸电极冷等离子体射流发生装置
KR101542333B1 (ko) * 2014-12-26 2015-08-05 한국과학기술연구원 다중 가스셀 모듈을 이용한 극자외선 빔 생성장치
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
CN114442437B (zh) * 2020-10-30 2024-05-17 上海宏澎能源科技有限公司 光源装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201921A (en) * 1978-07-24 1980-05-06 International Business Machines Corporation Electron beam-capillary plasma flash x-ray device
FR2551614B1 (fr) * 1983-09-02 1986-03-21 Centre Nat Rech Scient Source intense de rayons x mous, a compression cylindrique de plasma, ce plasma etant obtenu a partir d'une feuille explosee
DE3332711A1 (de) * 1983-09-10 1985-03-28 Fa. Carl Zeiss, 7920 Heidenheim Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich
EP0411001A1 (de) * 1988-04-26 1991-02-06 Siemens Aktiengesellschaft Nach dem te-prinzip arbeitender gaslaser mit einem anregungskreis und einem vielkanal-pseudofunken-schalter
DE19753696A1 (de) * 1997-12-03 1999-06-17 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung
DE19962160C2 (de) * 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
TW518913B (en) * 2000-07-03 2003-01-21 Asml Netherlands Bv Radiation source, lithographic apparatus, and semiconductor device manufacturing method
EP1300056A2 (en) * 2000-07-04 2003-04-09 Lambda Physik AG Method of producing short-wave radiation from a gas-discharge plasma and device for implementing it
RU2206186C2 (ru) 2000-07-04 2003-06-10 Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации

Also Published As

Publication number Publication date
ATE469533T1 (de) 2010-06-15
CN1311716C (zh) 2007-04-18
EP1248499B1 (de) 2010-05-26
US7126143B2 (en) 2006-10-24
TWI284916B (en) 2007-08-01
DE50115489D1 (de) 2010-07-08
JP2004530269A (ja) 2004-09-30
WO2002082872A1 (de) 2002-10-17
EP1248499A1 (de) 2002-10-09
US20040183037A1 (en) 2004-09-23
CN1531840A (zh) 2004-09-22
DE10291549D2 (de) 2004-04-15
DE10139677A1 (de) 2002-10-17
EP1374650A1 (de) 2004-01-02

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