TWI276154B - Spin-coating method, determination method for spin-coating condition and mask blank - Google Patents

Spin-coating method, determination method for spin-coating condition and mask blank Download PDF

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Publication number
TWI276154B
TWI276154B TW092107614A TW92107614A TWI276154B TW I276154 B TWI276154 B TW I276154B TW 092107614 A TW092107614 A TW 092107614A TW 92107614 A TW92107614 A TW 92107614A TW I276154 B TWI276154 B TW I276154B
Authority
TW
Taiwan
Prior art keywords
spin
coating
film thickness
region
thickness uniformity
Prior art date
Application number
TW092107614A
Other languages
English (en)
Other versions
TW200400543A (en
Inventor
Hideo Kobayashi
Takao Higuchi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200400543A publication Critical patent/TW200400543A/zh
Application granted granted Critical
Publication of TWI276154B publication Critical patent/TWI276154B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW092107614A 2002-04-03 2003-04-03 Spin-coating method, determination method for spin-coating condition and mask blank TWI276154B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002101840A JP4118585B2 (ja) 2002-04-03 2002-04-03 マスクブランクの製造方法

Publications (2)

Publication Number Publication Date
TW200400543A TW200400543A (en) 2004-01-01
TWI276154B true TWI276154B (en) 2007-03-11

Family

ID=29388788

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092107614A TWI276154B (en) 2002-04-03 2003-04-03 Spin-coating method, determination method for spin-coating condition and mask blank

Country Status (4)

Country Link
US (2) US7195845B2 (zh)
JP (1) JP4118585B2 (zh)
KR (2) KR101009543B1 (zh)
TW (1) TWI276154B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4118585B2 (ja) * 2002-04-03 2008-07-16 Ｈｏｙａ株式会社 マスクブランクの製造方法
KR20050031425A (ko) * 2003-09-29 2005-04-06 호야 가부시키가이샤 마스크 블랭크 및 그 제조방법
KR101100003B1 (ko) * 2004-03-09 2011-12-28 호야 가부시키가이샤 마스크 블랭크 생산 시스템
JP4440688B2 (ja) * 2004-03-31 2010-03-24 Ｈｏｙａ株式会社 レーザ描画装置、レーザ描画方法及びフォトマスクの製造方法
KR100587715B1 (ko) * 2004-06-07 2006-06-09 주식회사 에스앤에스텍 블랭크 마스크의 레지스트 코팅방법
KR100586453B1 (ko) * 2004-07-26 2006-06-08 주식회사 수성케미칼 연속식 회전 코팅을 이용한 광학 필터의 제조방법
KR20070033801A (ko) * 2005-09-22 2007-03-27 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
US20080020324A1 (en) * 2006-07-19 2008-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction with top coater removal
EP2274819B1 (de) * 2008-04-30 2017-04-05 Levitronix GmbH Rotationsmaschine, verfahren zur bestimmung einer verkippung eines rotors einer rotationsmaschine, sowie bearbeitungsanlage
US8053256B2 (en) * 2008-12-31 2011-11-08 Texas Instruments Incorporated Variable thickness single mask etch process
JP5373498B2 (ja) * 2009-07-27 2013-12-18 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
US9104107B1 (en) 2013-04-03 2015-08-11 Western Digital (Fremont), Llc DUV photoresist process
US10558126B2 (en) * 2014-02-24 2020-02-11 Asml Netherlands B.V. Lithographic apparatus and method
KR101702101B1 (ko) * 2014-11-27 2017-02-13 숭실대학교산학협력단 스핀 코팅 기법을 이용한 3d 프린팅 시스템 및 방법
US10292862B1 (en) * 2018-05-03 2019-05-21 Richard Mackool Ophthalmic surgical instruments and methods of use thereof
CN110867529A (zh) * 2019-10-22 2020-03-06 深圳市华星光电半导体显示技术有限公司 真空冷却干燥设备以及显示功能层干燥方法
JP7445203B2 (ja) 2020-03-02 2024-03-07 大日本印刷株式会社 潜像を有する反射体

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123031A (ja) 1983-12-08 1985-07-01 Hoya Corp レジスト塗布方法
US4988464A (en) * 1989-06-01 1991-01-29 Union Carbide Corporation Method for producing powder by gas atomization
JPH0429215A (ja) 1990-05-25 1992-01-31 Nippon Telegr & Teleph Corp <Ntt> 色識別機能付きコンタクトレンズおよびその製造方法
JPH07281414A (ja) * 1994-04-12 1995-10-27 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスクとその製造方法
JPH118177A (ja) 1997-06-16 1999-01-12 Mitsubishi Electric Corp レジスト供給装置およびレジスト塗布方法
US6162565A (en) * 1998-10-23 2000-12-19 International Business Machines Corporation Dilute acid rinse after develop for chrome etch
TW509966B (en) * 2000-03-14 2002-11-11 Tokyo Electron Ltd Substrate processing method and substrate processing apparatus
JP3593012B2 (ja) * 2000-08-22 2004-11-24 東京エレクトロン株式会社 塗布膜形成装置及びその方法
US6635393B2 (en) * 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
JP4118585B2 (ja) * 2002-04-03 2008-07-16 Ｈｏｙａ株式会社 マスクブランクの製造方法
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer

Also Published As

Publication number Publication date
US20040009295A1 (en) 2004-01-15
US7195845B2 (en) 2007-03-27
US20070148344A1 (en) 2007-06-28
TW200400543A (en) 2004-01-01
KR20040002484A (ko) 2004-01-07
JP2003297730A (ja) 2003-10-17
KR101009543B1 (ko) 2011-01-18
JP4118585B2 (ja) 2008-07-16
KR20090101135A (ko) 2009-09-24
KR101045171B1 (ko) 2011-06-30
US8293326B2 (en) 2012-10-23

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MM4A Annulment or lapse of patent due to non-payment of fees