TWI275147B - Nitrogen-doped silicon wafer and its manufacturing method - Google Patents

Nitrogen-doped silicon wafer and its manufacturing method Download PDF

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Publication number
TWI275147B
TWI275147B TW094123701A TW94123701A TWI275147B TW I275147 B TWI275147 B TW I275147B TW 094123701 A TW094123701 A TW 094123701A TW 94123701 A TW94123701 A TW 94123701A TW I275147 B TWI275147 B TW I275147B
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TW
Taiwan
Prior art keywords
wafer
oxygen
temperature
nitrogen
densities
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Application number
TW094123701A
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English (en)
Chinese (zh)
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TW200614378A (en
Inventor
Kozo Nakamura
Susumu Maeda
Koichiro Hayashida
Takahisa Sugiman
Katsuhiko Sugisawa
Original Assignee
Komatsu Denshi Kinzoku Kk
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Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200614378A publication Critical patent/TW200614378A/zh
Application granted granted Critical
Publication of TWI275147B publication Critical patent/TWI275147B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW094123701A 2004-08-12 2005-07-13 Nitrogen-doped silicon wafer and its manufacturing method TWI275147B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004235645A JP2006054350A (ja) 2004-08-12 2004-08-12 窒素ドープシリコンウェーハとその製造方法

Publications (2)

Publication Number Publication Date
TW200614378A TW200614378A (en) 2006-05-01
TWI275147B true TWI275147B (en) 2007-03-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123701A TWI275147B (en) 2004-08-12 2005-07-13 Nitrogen-doped silicon wafer and its manufacturing method

Country Status (5)

Country Link
US (1) US7875117B2 (https=)
JP (1) JP2006054350A (https=)
CN (1) CN101002310B (https=)
TW (1) TWI275147B (https=)
WO (1) WO2006016659A1 (https=)

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CN102168312A (zh) * 2011-03-09 2011-08-31 浙江大学 一种高掺氮的硅片及其快速掺氮的方法
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
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JP6241381B2 (ja) * 2014-07-09 2017-12-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
US11111602B2 (en) 2014-07-31 2021-09-07 Globalwafers Co., Ltd. Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6458551B2 (ja) * 2015-02-25 2019-01-30 株式会社Sumco シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
JP6569613B2 (ja) * 2016-07-11 2019-09-04 株式会社Sumco シリコンウェーハの評価方法及び製造方法
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
JP6436255B1 (ja) * 2018-02-27 2018-12-12 株式会社Sumco シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法
JP7006517B2 (ja) * 2018-06-12 2022-01-24 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法
CN113707543B (zh) * 2021-07-19 2023-09-29 长鑫存储技术有限公司 晶圆处理方法及晶圆处理装置
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法
JP7831262B2 (ja) * 2022-12-12 2026-03-17 株式会社Sumco Ｂｍｄ密度推定方法、ｂｍｄ密度推定装置およびｂｍｄ密度推定プログラム
JP7838464B2 (ja) * 2022-12-12 2026-04-01 株式会社Sumco 推定方法、推定装置および推定プログラム

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Also Published As

Publication number Publication date
CN101002310A (zh) 2007-07-18
JP2006054350A (ja) 2006-02-23
WO2006016659A1 (ja) 2006-02-16
CN101002310B (zh) 2011-08-03
US20070218570A1 (en) 2007-09-20
TW200614378A (en) 2006-05-01
US7875117B2 (en) 2011-01-25

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