JP2006054350A - 窒素ドープシリコンウェーハとその製造方法 - Google Patents

窒素ドープシリコンウェーハとその製造方法 Download PDF

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Publication number
JP2006054350A
JP2006054350A JP2004235645A JP2004235645A JP2006054350A JP 2006054350 A JP2006054350 A JP 2006054350A JP 2004235645 A JP2004235645 A JP 2004235645A JP 2004235645 A JP2004235645 A JP 2004235645A JP 2006054350 A JP2006054350 A JP 2006054350A
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Japan
Prior art keywords
density
temperature
oxygen
wafer
nitrogen
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Pending
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JP2004235645A
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English (en)
Japanese (ja)
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JP2006054350A5 (https=
Inventor
Kozo Nakamura
浩三 中村
Susumu Maeda
進 前田
Koichiro Hayashida
広一郎 林田
Takahisa Sugiman
貴久 杉万
Katsuhiko Sugisawa
克彦 杉澤
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Sumco Techxiv Corp
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Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP2004235645A priority Critical patent/JP2006054350A/ja
Priority to TW094123701A priority patent/TWI275147B/zh
Priority to US11/573,387 priority patent/US7875117B2/en
Priority to CN200580026862.0A priority patent/CN101002310B/zh
Priority to PCT/JP2005/014773 priority patent/WO2006016659A1/ja
Publication of JP2006054350A publication Critical patent/JP2006054350A/ja
Publication of JP2006054350A5 publication Critical patent/JP2006054350A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004235645A 2004-08-12 2004-08-12 窒素ドープシリコンウェーハとその製造方法 Pending JP2006054350A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004235645A JP2006054350A (ja) 2004-08-12 2004-08-12 窒素ドープシリコンウェーハとその製造方法
TW094123701A TWI275147B (en) 2004-08-12 2005-07-13 Nitrogen-doped silicon wafer and its manufacturing method
US11/573,387 US7875117B2 (en) 2004-08-12 2005-08-11 Nitrogen doped silicon wafer and manufacturing method thereof
CN200580026862.0A CN101002310B (zh) 2004-08-12 2005-08-11 掺氮硅晶片及其制造方法
PCT/JP2005/014773 WO2006016659A1 (ja) 2004-08-12 2005-08-11 窒素ドープシリコンウェーハとその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004235645A JP2006054350A (ja) 2004-08-12 2004-08-12 窒素ドープシリコンウェーハとその製造方法

Publications (2)

Publication Number Publication Date
JP2006054350A true JP2006054350A (ja) 2006-02-23
JP2006054350A5 JP2006054350A5 (https=) 2009-08-20

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JP2004235645A Pending JP2006054350A (ja) 2004-08-12 2004-08-12 窒素ドープシリコンウェーハとその製造方法

Country Status (5)

Country Link
US (1) US7875117B2 (https=)
JP (1) JP2006054350A (https=)
CN (1) CN101002310B (https=)
TW (1) TWI275147B (https=)
WO (1) WO2006016659A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016006145A1 (ja) * 2014-07-09 2016-01-14 株式会社Sumco エピタキシャルシリコンウェーハおよびその製造方法
CN113707543A (zh) * 2021-07-19 2021-11-26 长鑫存储技术有限公司 晶圆处理方法及晶圆处理装置
JP2024083928A (ja) * 2022-12-12 2024-06-24 株式会社Sumco Ｂｍｄ密度推定方法、ｂｍｄ密度推定装置およびｂｍｄ密度推定プログラム
JP2024083927A (ja) * 2022-12-12 2024-06-24 株式会社Sumco 推定方法、推定装置および推定プログラム

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5072460B2 (ja) * 2006-09-20 2012-11-14 ジルトロニック アクチエンゲゼルシャフト 半導体用シリコンウエハ、およびその製造方法
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
US8890291B2 (en) * 2009-03-25 2014-11-18 Sumco Corporation Silicon wafer and manufacturing method thereof
EP2309038B1 (en) * 2009-10-08 2013-01-02 Siltronic AG production method of an epitaxial wafer
KR101461531B1 (ko) * 2010-02-08 2014-11-13 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조 방법, 그리고, 반도체 디바이스의 제조 방법
CN102168312A (zh) * 2011-03-09 2011-08-31 浙江大学 一种高掺氮的硅片及其快速掺氮的方法
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
JP6052189B2 (ja) * 2014-01-16 2016-12-27 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
US11111602B2 (en) 2014-07-31 2021-09-07 Globalwafers Co., Ltd. Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6458551B2 (ja) * 2015-02-25 2019-01-30 株式会社Sumco シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
JP6569613B2 (ja) * 2016-07-11 2019-09-04 株式会社Sumco シリコンウェーハの評価方法及び製造方法
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
JP6436255B1 (ja) * 2018-02-27 2018-12-12 株式会社Sumco シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法
JP7006517B2 (ja) * 2018-06-12 2022-01-24 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000211995A (ja) * 1998-11-17 2000-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエ―ハおよびシリコン単結晶ウエ―ハの製造方法
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
WO2001055485A1 (en) * 2000-01-25 2001-08-02 Shin-Etsu Handotai Co., Ltd. Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
JP2002012497A (ja) * 2000-06-22 2002-01-15 Sumitomo Metal Ind Ltd シリコン単結晶の製造方法およびエピタキシャルウェーハの製造方法
JP2003318181A (ja) * 2002-04-25 2003-11-07 Sumitomo Mitsubishi Silicon Corp 半導体シリコン基板におけるｉｇ能の評価方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JP4041182B2 (ja) 1997-01-27 2008-01-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 熱処理用シリコンウェーハ及びその製造方法
US6190631B1 (en) 1997-04-09 2001-02-20 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
JP3446572B2 (ja) * 1997-11-11 2003-09-16 信越半導体株式会社 シリコン単結晶中の酸素析出挙動を割り出す方法、およびシリコン単結晶ウエーハ製造工程の決定方法、並びにプログラムを記録した記録媒体
JP3516200B2 (ja) 1997-12-25 2004-04-05 三菱住友シリコン株式会社 シリコン単結晶およびエピタキシャルウェーハ
TW589415B (en) 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP3771737B2 (ja) 1998-03-09 2006-04-26 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP3626364B2 (ja) 1998-05-22 2005-03-09 信越半導体株式会社 エピタキシャルシリコン単結晶ウエーハの製造方法及びエピタキシャルシリコン単結晶ウエーハ
US6162708A (en) 1998-05-22 2000-12-19 Shin-Etsu Handotai Co., Ltd. Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
JP4616949B2 (ja) 1999-03-17 2011-01-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 メルトレベル検出装置及び検出方法
JP2001284362A (ja) 2000-03-31 2001-10-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法
JP3735002B2 (ja) 2000-03-27 2006-01-11 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP3452042B2 (ja) 2000-10-11 2003-09-29 三菱住友シリコン株式会社 シリコンウェーハの製造方法
JP2002134517A (ja) 2000-10-27 2002-05-10 Mitsubishi Materials Silicon Corp シリコンウェーハの熱処理方法
JP2002184779A (ja) 2000-12-13 2002-06-28 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法及びアニールウェーハ
JP4385539B2 (ja) 2001-03-29 2009-12-16 株式会社Ｓｕｍｃｏ シリコン単結晶ウェーハの熱処理方法
JP4646440B2 (ja) 2001-05-28 2011-03-09 信越半導体株式会社 窒素ドープアニールウエーハの製造方法
JP3760889B2 (ja) 2001-06-19 2006-03-29 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
DE102004041378B4 (de) * 2004-08-26 2010-07-08 Siltronic Ag Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung
FR2899380B1 (fr) * 2006-03-31 2008-08-29 Soitec Sa Procede de revelation de defauts cristallins dans un substrat massif.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000211995A (ja) * 1998-11-17 2000-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエ―ハおよびシリコン単結晶ウエ―ハの製造方法
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
WO2001055485A1 (en) * 2000-01-25 2001-08-02 Shin-Etsu Handotai Co., Ltd. Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
JP2002012497A (ja) * 2000-06-22 2002-01-15 Sumitomo Metal Ind Ltd シリコン単結晶の製造方法およびエピタキシャルウェーハの製造方法
JP2003318181A (ja) * 2002-04-25 2003-11-07 Sumitomo Mitsubishi Silicon Corp 半導体シリコン基板におけるｉｇ能の評価方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054821A (ja) * 2009-09-03 2011-03-17 Sumco Corp エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2016006145A1 (ja) * 2014-07-09 2016-01-14 株式会社Sumco エピタキシャルシリコンウェーハおよびその製造方法
CN113707543A (zh) * 2021-07-19 2021-11-26 长鑫存储技术有限公司 晶圆处理方法及晶圆处理装置
CN113707543B (zh) * 2021-07-19 2023-09-29 长鑫存储技术有限公司 晶圆处理方法及晶圆处理装置
JP2024083928A (ja) * 2022-12-12 2024-06-24 株式会社Sumco Ｂｍｄ密度推定方法、ｂｍｄ密度推定装置およびｂｍｄ密度推定プログラム
JP2024083927A (ja) * 2022-12-12 2024-06-24 株式会社Sumco 推定方法、推定装置および推定プログラム
JP7831262B2 (ja) 2022-12-12 2026-03-17 株式会社Sumco Ｂｍｄ密度推定方法、ｂｍｄ密度推定装置およびｂｍｄ密度推定プログラム
JP7838464B2 (ja) 2022-12-12 2026-04-01 株式会社Sumco 推定方法、推定装置および推定プログラム

Also Published As

Publication number Publication date
TWI275147B (en) 2007-03-01
CN101002310A (zh) 2007-07-18
WO2006016659A1 (ja) 2006-02-16
CN101002310B (zh) 2011-08-03
US20070218570A1 (en) 2007-09-20
TW200614378A (en) 2006-05-01
US7875117B2 (en) 2011-01-25

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