TWI273140B - Phase change lead-free super plastic solders - Google Patents
Phase change lead-free super plastic solders Download PDFInfo
- Publication number
- TWI273140B TWI273140B TW093103220A TW93103220A TWI273140B TW I273140 B TWI273140 B TW I273140B TW 093103220 A TW093103220 A TW 093103220A TW 93103220 A TW93103220 A TW 93103220A TW I273140 B TWI273140 B TW I273140B
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- alloy
- flux
- phase
- lead
- component comprises
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
1273140 ⑴ 玖、發明說明 【發明所屬之技術領域】 本發明大體上係有關於焊接處理,及更特定地係有關 於無鉛超塑性焊劑。 【先前技術】 焊劑爲特殊的金屬組成物(習知爲合金),其當以通量 形式存在時金屬是在相對低的溫度( 1 20-450 °C )。最常使 用的焊劑包含錫及鉛作爲基本組成。有許多合金變化存在 ,其包括兩種或多種以下的金屬元素:錫(Sn),鉛(Pb), 銀(Ag),鉍(Bi),銻(Sb)及銅(Cu)。焊劑是藉由將其加熱 熔化並結合至金屬表面來加以使用。焊劑在所結合的金屬 之間形成永久的中介金屬,特別是如一金屬”黏膠”般地作 用。除了提供一結合功能之外,焊劑接點亦提供被焊接的 構件之間一電子連接及一熱傳遞路徑。焊劑有許多的形式 ,包括糊狀,線狀,條狀,帶狀,壓九及鑄塊。 許多高密度積體電路(1C),如微處理器,繪圖處理器 ,微控制器,及類此者,都是以使用大量的I/O線的方式 來加以封裝。用於此目的的一般封裝技術包括”倒裝晶片” 封裝及球柵陣列(B GA)封裝。這兩種封裝技術都使用焊劑 連線(接點)於每一 I/O線上(如,接腳或球)。隨著複雜1C 的密度逐漸提高,在倒裝晶片及BGA的I/O連線密度上 亦會發生相應的提高。其結果爲,使用在封裝上的焊劑接 點在尺寸上亦必需隨之縮小。 -4- (2) 1273140 詳言之,倒裝晶片(FC)並非一特殊的封裝(如SOIC) ,或甚至是一封裝種類(如,B G A)。倒裝晶片描述的是電 氣地將晶粒連接至封裝載具上的方法。封裝載具,是基板 或導線架都可,然後提供從該晶粒至該封裝的外部的連線 。在”標準”的封裝中,介於晶粒與載具之間的互連線是使 用電線來作成。晶粒係附裝在該載具上起面向上,然後一 電線首先結合至該晶粒,然後被拉線並結合至該載具上。 電線典型地爲l-5mm長且直徑爲25-35微米。相反地,在 倒裝晶片封裝中,介於晶粒與載具之間互連線是經由一導 電的”凸塊”來形成,其被直接置於晶粒表面上。該被凸起 的晶粒然後”被翻轉,’並被置放成面向下,其中凸塊係直接 連接至該載具。一凸塊典型地高度爲70-100微米且直徑爲 1 00- 1 25微米。 該倒裝晶片連線大體上係用以下兩種方式中的一種來 形成:使用焊劑或使用導電性黏劑。目前,最常見的封裝 互連線爲焊劑,高97Pb-3Sn於晶粒側並以共熔的Pb-Sn 附著至基板。此被焊劑凸起的晶粒係藉由一焊劑再熔流處 理而附著至一基板上,其與用來將BGA球附著至封裝外 部的處理非常相似。在晶粒被焊接之後,塡料(underfill) 被加至該晶粒與基板之間。塡料爲一經過特殊加工的環氧 樹脂,其可塡入介於晶粒與載具之間的空間,以包圍該焊 劑凸塊。其是被設計來控制在焊劑接點中由於矽晶粒與載 具之間在熱膨脹上的差異所造成的應力,這將於下文中詳 細說明。當應力發生時,該塡料會吸收掉大部分的應力, -5- (3) 1273140 降低在焊劑凸塊上的應變,大幅地增加封裝的壽命。該晶 片附著及塡料步驟是倒裝晶片互連線的基本。超過此部分 ,包圍該晶粒之封裝結構的其它部分可以有許多形式且可 運用既有的製程及封裝格式。 最近,歐盟已規定在2003年五月31之後所銷售的新產 品不可包含以鉛爲基礎的焊劑。其它國家及地區正在考慮 採用類似的限制。這對1C產品製造以及在產品的製造期 間使用焊接處理的工業都會造成問題。雖然有許多無鉛焊 劑已爲習知,但這些焊劑在與有鉛焊劑比較起來時則具有 較差的特性,如在展延性(塑性)上的降低。這在倒裝晶片 及B G A組件處理中特別是一項問題。 由於活躍的硏發努力,在最近已完成朝向無鉛焊劑技 術過渡的實質進展。目前,排名在前的候選者爲使用在不 同的焊接應用上之近三共熔Sn-Ag-Cu合金。該近三共熔 Sn-Ag-Cu合金在固化時會產生三個相,即/S-Sn,Ag3Sn ,Cu6Sn5。在固化期間,平衡共熔轉變被運動地禁止。隨 然Ag3S η相是用最小的過冷(undercooling)來成核,但泠-Sn相的成核則需要典型的10至30 °C的過冷。在過冷的要 求上的此一不一致的結果爲,在冷卻期間,焊劑接點的最 終固化之前會有大且呈板片狀的Ag3Sn結構快速生長在液 相中。當大的Ag3 Sn板出現在焊劑接點內時,它們對於機 械性的行爲會有不利的影響且會因爲提供沿著大Ag3S η板 與0 -Sn相之間的界面之優先龜裂擴展路徑而降低焊劑接 點的疲勞壽命。Sn-Ag-Cu焊劑的其它常見問題包括ILD( (4) 1273140 內層介電)龜裂及在倒裝晶片組件在基板上的墊剝落,及 在BGA封裝中的BGA側的墊剝落。 【發明內容】 較佳體系之詳細說明 無鉛焊劑組成及焊劑的舉例性使用的細節將於本文中 說明。在下面的說明中,數種特定的細節被敘述,如將該 無鉛焊劑使用在倒裝晶片封裝上,用以對本發明的實施例 提供一全盤的瞭解。然而,熟習此技藝者應可瞭解到,本 發明可在沒有一或多個特定細節下,或用其它的方法,構 件,材質等等,之下來實施。在其它例子中,習知的結構 ’材質,或操作並沒有被詳細地顯示或描述以避免矇蔽了 本發明的真正特徵所在。 在此說明書中,” 一個實施例,,或,’一實施例,,意指以關 於一實施例所作之一特定的特徵,結構,或特徵的描述被 包括在本發明的至少一實施例中。因此,在此說明書中的 各處出現之”在一個實施例中,,或,,在一實施例中,,等詞句並 不一定是都是指同一實施例。又,在一或多個實施例中之 特定的特徵,結構或特性可用任何適當的方式被結合。 【實施方式】 參照第1 a及1 b圖,一典型的倒裝晶片組件包括一基 板1〇〇其具有多個墊102其上形成有各自的焊劑凸塊104。 基板100進一步包括多個焊球106耦合至其底側。各別的導 (5) 1273140 線1 0 8被拉牽在每一墊1 ο 2與焊劑球1 〇 6之間。一積體電路 晶粒1 1 〇藉由焊劑凸塊1 0 4而被,,倒裝晶片,’地安裝到基板 1 00上。爲了要方便對晶粒電路的電子連線,晶粒包括多 個安裝在其底側上的墊1 1 2,每一墊都經由穿過一內層介 電質(ILD)l 14的電線(未示出)而被連接至晶粒電路的各個 部分。該ILD典型地包含一介電層其被形成在該晶粒基板 上方,如一砂晶粒基板的二氧化砂。 該等倒裝晶片的構件的組裝係藉由將焊劑凸塊的溫度 升高至焊劑的重熔流佈溫度,造成焊劑凸塊熔化。這典型 地是在一重熔流佈爐或類此者內來實施。接下來’該等被 組裝的構件被冷卻,以讓該焊劑回復到其固態,藉以在墊 102與1 12之間形成一金屬結合。 典型地,該基板是由一堅硬的材質,如一堅硬的層壓 板,來製成。同時,該晶粒及內層介電質典型地是由一半 導體基材,如矽,所製成。矽具有約2-4ppm/°C的熱膨脹 係數(CTE)。一典型的倒裝晶片基板的 CTE約爲16-19PPm/°C。在CTE上的此一差異會如下文所述地導致在 焊劑凸塊及內層界電質內之應力被誘發。 在該重熔流佈溫度下,依據第1 A圖所示該基板及晶 粒具有各自的相對長度1^!及LDi。當該組件被冷卻時, 相對長度即會縮短,如第lb圖中所示的長度LS2及LD2。 在長度上之各自的縮減量被標記爲ALS及ALd,其中△ Ld爲了淸楚起見被顯示爲〇。因爲晶粒的CTE比基板的 CTE要低許多,所以△ Ls比△ LD要大上許多。 (7) 1273140 組合的截面,而不僅是該焊劑凸塊/墊界面而已。這可將 位在焊劑及焊劑凸塊/墊界面上的應力降低一定的程度, 但爲法將應力完全去除。更重要地,最初從再熔流佈冷卻 至室溫所造成之累積在焊劑凸塊內的殘留應力(其被同時 地傳遞至焊劑凸塊/墊界面)仍維持沒變,因爲塡料是在構 件已被冷卻之後才被塡入的。 在以前的製造技術之下,焊劑凸塊1 04典型地將包含 一以鉛爲基礎的焊劑,如上文中所述者。這些焊劑在封裝 構件所處的整個溫度範圍內都大致上表現出很好的塑性( 非常柔軟)。其結果爲,導因於墊剝落及ILD龜裂的損壞 是極爲少見的。 然而,使用以鉛爲基礎的焊劑對於許多產品,如要銷 往歐盟國家的物品,而言並不是一可行的方案。因此,這 些產品的焊劑凸塊必需包含無鉛材質。如上文所述,S η-Ag-Cu合金已成爲取代以鉛爲基礎的焊劑的領先候選焊劑 。這在許多應用中會導致一個問題,因爲Sn-Ag-Cu焊劑 在與以鉛爲基礎的焊劑比較時並不會表現出良好的塑性, 因而會產生上文所述的損壞模式。 依據本發明的原理,現將揭示具有超塑性的無鉛焊劑 複合物。在一實施例中,該無鉛焊劑包含一 Sn-In合金, 其中的重量百分比(wt%)的比例爲4-15%的銦(8 5 -94 wt %的 銻)。該超塑性係由於當Sn_ In合金從再熔流佈溫度冷卻 至室溫時,在Sii-In合金中的相轉變的結果。此相轉變顯 著地降低與倒裝晶片組件及類此者相關的聯的殘留應力的 -10- 1273140
第4圖顯示數種Sn-In合金在一正常的冷卻範圍內之 相轉變行爲。當溫度降低時,會有更多的r bco相轉變爲 /3 dn bet相。進一步被注意到的是,當111的^%被降低 曰寺’在一給定溫度的相轉變的百分比會增加。其結果爲, 〜特定Sn-In合金的塑性行爲可被調整用以適合其將被使 用的目標應用所需。 本發明的其它態樣與發生在合金被冷卻時的馬氏體轉 變有關。大體上,馬氏體及,,馬氏體,,轉變係有關於無擴散 的結晶改變,其被用來改變合金的物質特性。德國金屬學 家A· Martens是第一個在鐵-碳鋼中指認出此一結晶改變 的人。 根據馬氏體轉變的種類,其大體上與合金元素及/或 熱處理參數有關,馬氏體轉變會在新的相中形成板,針, 或葉片狀的結構。馬氏體結構改變了合金的物質特性。例 如,對鋼進行熱處理用以在鋼的磨損表面上形成馬氏體, 如刀子及類此者。在此種使用中,馬氏體結構包含一在鋼 的表面上之硬化的物質,其是非常抗磨損的。雖然提高硬 度經常是有利的,但其缺點爲會損失可延展性:馬氏體鋼 通常被歸類爲脆的物質(當與非馬氏體相的鋼合金相比, 如退火鋼,時)。 雖然馬氏體鋼表現出脆的(即,非可延展的)行爲,但 其它馬氏體合金則表現出貫質上不相问的行爲,包括超塑 性。例如,某些記憶型金屬(即,可被變形並回復至其位 -12- (12) 1273140 有相轉變機制所產生的變形所以並不會對物質產生如傳統 焊劑一般的損傷。其結果爲本發明之超塑性焊劑合金可被 成功地運到傳統上會導致疲勞損壞的應用上。 如上文所提及的,本發明的超塑性焊劑非常適合使用 在被結合的物質具有 CTE不一致的應用上。上文中有關 在倒裝晶片基板結合及B G A封裝中使用本發明的超塑性 焊劑的使用的說明僅爲本發明的超塑性焊劑的舉例性用途 。大體上,本發明的焊劑可被運用在具有CTE不一致之 可焊接的物質的結合上。本發明使用上的其它例子包括將 一整合的散熱器(HI S)黏結至一晶粒上。在此例子中,焊 劑進一步執行用在傳統的HIS與晶粒耦合中的熱界面物質 的功能。 本發明之實施例的以上說明,包括在摘要中所述內容 在內,並不是排它性的或是要將本發明限制在所揭示的特 定形式上。雖然爲了舉例說明的目的在本文中揭示了特定 的實施例,但在本發明的範圍內仍有不同等效變化的可能 ,這些都是熟習此技藝者所能瞭解到的。 有鑑於以上詳細的說明,這些變化都可完成在本發明 上。在下面的申請專利範圍中所用的詞不應被解釋爲將本 發明限制在說明書及申請專利範圍中所揭示的特定實施例 上。相反地,本發明的範圍完全是由以下的申請專利範圍 來界定,其應依據申請專利範圍詮釋原離來加以解讀。 【圖式簡單說明】 -15- (13) 1273140 本發明的前述態樣及許多優點在參照隨附的圖式閱讀 以下詳細的說明之後將可被更容易地瞭解與認識,其中相 同的標號代表在所有圖中之相同的元件,除非另有其它的 界疋·
第1 a · 1 C圖爲剖面圖,其顯示一傳統的倒裝晶片組件 處理,其中第1 a圖顯示在重熔流佈(r e fl 〇 w)溫度下的情況 ,第1 b圖顯示在該組件已冷卻之後的情況,及第丨c圖顯 示在一塡料被添加及一蓋被模製於該組件上之後的情形; 第2圖爲相應於Sn-In合金的相圖; 第3圖爲一示意圖,其顯示當一 Sn-In合金從高溫冷 確至低溫時,其在晶格結構上的改變; 第4圖爲一圖表,其顯示相轉變對溫度及Sn-In重量 比例的相對改分比; 第5圖爲一顯微鏡掃描照片,其顯示一被空氣冷卻的 Sn-7In的馬氏體的形成; 第6圖爲一顯微鏡掃描照片,其顯示在一擠壓應力下 形成的Sn-9Iii的馬氏體相轉變的結果;及 第7圖爲一圖表,其顯示在一典型的冷卻率下,矽 (Si)及Sn-7In對溫度的位移特性。 [圖號說明] 100 基板 102 墊 -16- (14) 焊劑凸塊 焊劑球 導線 積體電路 墊 內層介電質(ILD) 塡料
蓋 塡充的六角形7相b c 〇結構 錫原子 銦原子 /3 -Sn bet 結構
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Claims (1)
1273140 (1) 拾、申請專利範圍 附件:4 A · • 第93 1 03220號專利申請案 中文申請專利範圍替/換本 民國95年8月29日修正 1 ·一種無鉛焊劑合金,其係由下列成份所組成: 11-15重量百分比(wt%)的銦(In), 至少一種選自下列的元素:Sb,Cu,Ag,Ni,Ge,及AI, 其中該至少一種元素的總重量百分比(wt%)小於2重量%, φ 以及餘量的錫(Sn)。 2.如申請專利範圍第1項之無鉛焊劑合金,其具有一 組成且該組成會在其從一重熔流佈溫度冷卻至室溫時經歷 一馬氏體相轉變。 3 ·如申請專利範圍第2項之無鉛焊劑合金,其中該合 金係以錫(Sn)爲基礎’且其中該馬氏體相轉變將該合金的 晶格結構從塡充的六角形7相bco (體心斜方晶)結構轉爲 冷-S n b c t (體心四角形)結構。 Φ 4 · 一種將構件結合的方法,其包含: 將一無鉛焊劑配置在具有第一種熱膨脹係數(CTE)不 —致(mismatch)的第一及第二構件之間,該焊劑包含第一 種S η-In合金,該合金會在一溫度範圍內進行由塡充的六 角形7'相bco (體心斜方晶)結構轉爲石_S ^相bet (體心四角 形)結構的轉變,其中In的重量百分比係取決於在該溫度 範圍內該第一與第二構件之間的熱膨脹不一致之量而預先 进疋。 1273140 (2) 5 ·如申請專利範圍第4項之方法,其進一步包含至少 一種選自Sb’ Cu,Ag,Ni,Ge,及A1的元素。 6 ·如申請專利範圍第5項之方法,其中該至少一種元 素的總重量百分比(wt%)小於2%。 7·如申請專利範圍第4項之方法,其中In的重量%在 7 %與1 1 %之間。 8 ·如申請專利範圍第4項之方法,其中I η的重量%在 11 %與1 5 %之間。 9.如申請專利範圍第4項之方法,其進一步包含:將 一無錯焊劑配置在具有第二種C Τ Ε不一致的第三與第四 構件之間’該無錯焊劑包含弟一種Sn -In合金,該合金會 在一*溫度車B圍內進Y了由塡充的角形7'相b c 〇 (體心斜方 晶)結構轉爲)S -Sn相bet(體心四角形)結構的轉變,其中 該第二種Sn-ln合金中的In重量百分比係與第一種s n-in 合金中者不同。 10·如申請專利範圍第9項之方法,其中該第二種CTE 不一致與第一種CTE不一致不同。 1 1 ·如申請專利範圍第4項之方法,其中該第一構件包 含一半導體晶粒及該第二構件包含一倒裝晶片基板。 12.如申請專利範圍第4項之方法,其中該第一構件包 含一積體電路封裝及該第二構件包含一電路板。 i 3.如申請專利範圍第4項之方法,其中該第一構件包 含一處理器晶粒及該第二構件包含一整合的散熱器。 14 · 一種將熱膨脹係數(CTE)不一致的第一及第二構件 1273140 (3) 結合的方法,該方法包含: 將一無鉛焊劑配置在該第一及第二構件之間; 將該焊劑加熱至重熔流佈溫度;及 將該第一及第二構件冷卻以將該焊劑再固化, 其中該焊劑在冷卻期間會因爲該第一及第二構件的熱 膨脹係數(CTE)不一致所以會產生變形;且其中該焊劑具 有一組成且該組成會在其從一重熔流佈溫度冷卻時經歷一 相轉變,該相轉變可降低在焊劑內的殘留應力,該殘留應 力在相同的變行下通常都會出現。 1 5 ·如申請專利範圍第1 4項之方法,其中該第一構件 包含一半導體晶粒及該第二構件包含一倒裝晶片基板。 1 6 ·如申請專利範圍第1 4項之方法,其中該第一構件 包含一積體電路封裝及該第二構件包含一電路板。 17·如申請專利範圍第I4項之方法,其中該第一構件 包含一處理器晶粒及該第二構件包含一整合的散熱器。 1 8 ·如申請專利範圍第1 4項之方法,其中該無鉛合金 包含錫(Sn)及銦(In)。 1 9 .如申請專利範圍第1 4項之方法,其中該相轉變包 含一馬氏體轉變。 20 ·如申請專利範圍第1 9項之方法,其中該合金係以 錫(S η)爲基礎,及其中該馬氏體相轉變將該合金的晶格結 構從塡充的六角形7相bco(體心斜方晶)結構轉爲-Sn b c t (體心四角形)結構。 21·如申請專利範圍第19項之方法,其進一步包含控 -3- 1273140 (4) 制冷卻率,以產生一針狀的馬氏體微型結構。
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US10/404,695 US20040187976A1 (en) | 2003-03-31 | 2003-03-31 | Phase change lead-free super plastic solders |
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TWI273140B true TWI273140B (en) | 2007-02-11 |
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US (2) | US20040187976A1 (zh) |
EP (1) | EP1608481A1 (zh) |
KR (1) | KR100841138B1 (zh) |
CN (1) | CN1767921B (zh) |
TW (1) | TWI273140B (zh) |
WO (1) | WO2004094097A1 (zh) |
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- 2003-03-31 US US10/404,695 patent/US20040187976A1/en not_active Abandoned
-
2004
- 2004-02-06 WO PCT/US2004/003385 patent/WO2004094097A1/en active Application Filing
- 2004-02-06 EP EP04708990A patent/EP1608481A1/en not_active Ceased
- 2004-02-06 KR KR1020057018602A patent/KR100841138B1/ko not_active IP Right Cessation
- 2004-02-06 CN CN2004800087141A patent/CN1767921B/zh not_active Expired - Fee Related
- 2004-02-11 TW TW093103220A patent/TWI273140B/zh not_active IP Right Cessation
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2005
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Also Published As
Publication number | Publication date |
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EP1608481A1 (en) | 2005-12-28 |
TW200424322A (en) | 2004-11-16 |
US20050153523A1 (en) | 2005-07-14 |
US20040187976A1 (en) | 2004-09-30 |
KR20050119175A (ko) | 2005-12-20 |
WO2004094097A1 (en) | 2004-11-04 |
CN1767921B (zh) | 2011-09-14 |
CN1767921A (zh) | 2006-05-03 |
US7776651B2 (en) | 2010-08-17 |
KR100841138B1 (ko) | 2008-06-24 |
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