TWI256770B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI256770B
TWI256770B TW094111108A TW94111108A TWI256770B TW I256770 B TWI256770 B TW I256770B TW 094111108 A TW094111108 A TW 094111108A TW 94111108 A TW94111108 A TW 94111108A TW I256770 B TWI256770 B TW I256770B
Authority
TW
Taiwan
Prior art keywords
impurity
high frequency
impurity area
area
leakage
Prior art date
Application number
TW094111108A
Other languages
English (en)
Other versions
TW200539569A (en
Inventor
Tetsuro Asano
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200539569A publication Critical patent/TW200539569A/zh
Application granted granted Critical
Publication of TWI256770B publication Critical patent/TWI256770B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
TW094111108A 2004-05-28 2005-04-08 Semiconductor device TWI256770B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004158564A JP2005340550A (ja) 2004-05-28 2004-05-28 半導体装置

Publications (2)

Publication Number Publication Date
TW200539569A TW200539569A (en) 2005-12-01
TWI256770B true TWI256770B (en) 2006-06-11

Family

ID=35424214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111108A TWI256770B (en) 2004-05-28 2005-04-08 Semiconductor device

Country Status (5)

Country Link
US (1) US7193255B2 (zh)
JP (1) JP2005340550A (zh)
KR (1) KR100701139B1 (zh)
CN (1) CN1702965A (zh)
TW (1) TWI256770B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535668B2 (ja) * 2002-09-09 2010-09-01 三洋電機株式会社 半導体装置
KR100685359B1 (ko) 2002-09-09 2007-02-22 산요덴키가부시키가이샤 보호 소자
JP2004260139A (ja) * 2003-02-06 2004-09-16 Sanyo Electric Co Ltd 半導体装置
JP2006093617A (ja) * 2004-09-27 2006-04-06 Matsushita Electric Ind Co Ltd 半導体抵抗素子およびその製造方法
JP4939750B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939749B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
TWI269438B (en) * 2005-09-16 2006-12-21 Powerchip Semiconductor Corp Semiconductor device and electrostatic discharge protect device
US8563336B2 (en) 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JP3417013B2 (ja) * 1993-10-18 2003-06-16 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JP3393441B2 (ja) 1995-12-22 2003-04-07 ソニー株式会社 通信端末装置
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
US6603185B1 (en) * 1999-02-01 2003-08-05 Fuji Electric Co., Ltd. Voltage withstanding structure for a semiconductor device
JP4416288B2 (ja) * 2000-07-27 2010-02-17 三菱電機株式会社 逆導通サイリスタ
US6580107B2 (en) 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
JP2002141357A (ja) * 2000-10-31 2002-05-17 Mitsubishi Electric Corp 半導体装置
DE10205345B9 (de) * 2001-02-09 2007-12-20 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauelement
JP4839519B2 (ja) * 2001-03-15 2011-12-21 富士電機株式会社 半導体装置
JP3712111B2 (ja) 2001-03-30 2005-11-02 ユーディナデバイス株式会社 電力増幅用半導体装置
US20020195613A1 (en) * 2001-04-02 2002-12-26 International Rectifier Corp. Low cost fast recovery diode and process of its manufacture
JP2002368194A (ja) 2001-06-08 2002-12-20 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP3708057B2 (ja) * 2001-07-17 2005-10-19 株式会社東芝 高耐圧半導体装置
US20030025154A1 (en) * 2001-08-02 2003-02-06 Haynie Sheldon D. LDMOS high voltage structure compatible with VLSI CMOS processes
JP3908572B2 (ja) * 2002-03-18 2007-04-25 株式会社東芝 半導体素子
JP2003309130A (ja) 2002-04-17 2003-10-31 Sanyo Electric Co Ltd 半導体スイッチ回路装置
JP2004006816A (ja) 2002-04-17 2004-01-08 Sanyo Electric Co Ltd 半導体スイッチ回路装置およびその製造方法
JP2004134589A (ja) 2002-10-10 2004-04-30 Sanyo Electric Co Ltd 半導体装置
JP4128091B2 (ja) 2003-02-20 2008-07-30 三洋電機株式会社 スイッチ回路装置
JP4469584B2 (ja) * 2003-09-12 2010-05-26 株式会社東芝 半導体装置
US20050242411A1 (en) * 2004-04-29 2005-11-03 Hsuan Tso [superjunction schottky device and fabrication thereof]

Also Published As

Publication number Publication date
US20050263796A1 (en) 2005-12-01
KR20060048039A (ko) 2006-05-18
JP2005340550A (ja) 2005-12-08
TW200539569A (en) 2005-12-01
US7193255B2 (en) 2007-03-20
CN1702965A (zh) 2005-11-30
KR100701139B1 (ko) 2007-03-29

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