TWI238204B - Silica crucibles and methods for making the same - Google Patents
Silica crucibles and methods for making the same Download PDFInfo
- Publication number
- TWI238204B TWI238204B TW091103994A TW91103994A TWI238204B TW I238204 B TWI238204 B TW I238204B TW 091103994 A TW091103994 A TW 091103994A TW 91103994 A TW91103994 A TW 91103994A TW I238204 B TWI238204 B TW I238204B
- Authority
- TW
- Taiwan
- Prior art keywords
- inner layer
- layer
- item
- patent application
- crucible
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 46
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims description 2
- 238000004031 devitrification Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007788 roughening Methods 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 238000005247 gettering Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010606 normalization Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000010456 wollastonite Substances 0.000 description 3
- 229910052882 wollastonite Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 210000001519 tissue Anatomy 0.000 description 2
- MVEOHWRUBFWKJY-UHFFFAOYSA-N 7-hydroxynaphthalene-2-sulfonic acid Chemical compound C1=CC(S(O)(=O)=O)=CC2=CC(O)=CC=C21 MVEOHWRUBFWKJY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 210000003254 palate Anatomy 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/808,719 US6510707B2 (en) | 2001-03-15 | 2001-03-15 | Methods for making silica crucibles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI238204B true TWI238204B (en) | 2005-08-21 |
Family
ID=25199527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091103994A TWI238204B (en) | 2001-03-15 | 2002-03-05 | Silica crucibles and methods for making the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6510707B2 (https=) |
| EP (1) | EP1241141B1 (https=) |
| JP (1) | JP4462808B2 (https=) |
| KR (1) | KR100495772B1 (https=) |
| DE (1) | DE60220112T2 (https=) |
| TW (1) | TWI238204B (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4592037B2 (ja) * | 2000-05-31 | 2010-12-01 | 信越石英株式会社 | 石英ガラスルツボの製造方法 |
| US6755049B2 (en) * | 2001-03-08 | 2004-06-29 | Heraeus Quarzglas Gmbh & Co. Kg | Method of producing a quartz glass crucible |
| US20040118156A1 (en) * | 2001-03-08 | 2004-06-24 | Gabriele Korus | Method of producing a quartz glass crucible |
| US20030024467A1 (en) * | 2001-08-02 | 2003-02-06 | Memc Electronic Materials, Inc. | Method of eliminating near-surface bubbles in quartz crucibles |
| US20040258496A1 (en) * | 2002-04-08 | 2004-12-23 | Marusich Troy D. | High frequency tooth pass cutting device and method |
| US7383696B2 (en) * | 2005-09-08 | 2008-06-10 | Heraeus Shin-Etsu America, Inc. | Silica glass crucible with bubble-free and reduced bubble growth wall |
| US7427327B2 (en) * | 2005-09-08 | 2008-09-23 | Heraeus Shin-Etsu America, Inc. | Silica glass crucible with barium-doped inner wall |
| US7837955B2 (en) * | 2006-03-08 | 2010-11-23 | Unimin Corporation | Continuous reactor system for anoxic purification |
| US7716948B2 (en) * | 2006-12-18 | 2010-05-18 | Heraeus Shin-Etsu America, Inc. | Crucible having a doped upper wall portion and method for making the same |
| JP5143520B2 (ja) * | 2007-09-28 | 2013-02-13 | ジャパンスーパークォーツ株式会社 | シリカガラスルツボとその製造方法および引き上げ方法 |
| DE102008030310B3 (de) * | 2008-06-30 | 2009-06-18 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Quarzglastiegels |
| JP5523018B2 (ja) * | 2008-08-30 | 2014-06-18 | 株式会社Sumco | 石英ルツボの製造装置 |
| JP5377930B2 (ja) * | 2008-10-31 | 2013-12-25 | 株式会社Sumco | シリコン単結晶引上用石英ガラスルツボの製造方法 |
| US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
| JP4975012B2 (ja) * | 2008-12-29 | 2012-07-11 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法 |
| JP5047227B2 (ja) | 2009-05-27 | 2012-10-10 | ジャパンスーパークォーツ株式会社 | シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 |
| JP4922355B2 (ja) * | 2009-07-15 | 2012-04-25 | 信越石英株式会社 | シリカ容器及びその製造方法 |
| US9003832B2 (en) * | 2009-11-20 | 2015-04-14 | Heraeus Shin-Etsu America, Inc. | Method of making a silica crucible in a controlled atmosphere |
| FR2954764B1 (fr) * | 2009-12-30 | 2011-12-30 | Saint Gobain Quartz Sas | Creuset en silice |
| JP4854814B1 (ja) * | 2011-04-28 | 2012-01-18 | Ftb研究所株式会社 | シリコン結晶成長用石英坩堝のコーティング方法及びシリコン結晶成長用石英坩堝 |
| US8713966B2 (en) | 2011-11-30 | 2014-05-06 | Corning Incorporated | Refractory vessels and methods for forming same |
| EP3371119A4 (en) | 2015-11-04 | 2019-07-03 | Sibelco North America, Inc. | CLEANED, FOR PUNCHING A FIBER CABLE MODIFIED QUARTZ POWDER |
| JP7379054B2 (ja) * | 2018-12-27 | 2023-11-14 | モメンティブ・テクノロジーズ・山形株式会社 | 石英ガラスるつぼの製造方法および光学ガラス溶融用石英ガラスるつぼ |
| JP7282022B2 (ja) * | 2019-12-24 | 2023-05-26 | クアーズテック株式会社 | シリカガラスの製造方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116657A (en) * | 1977-05-05 | 1978-09-26 | Corning Glass Works | Process for increasing the annealing point of 96% silica glass |
| US4102664A (en) * | 1977-05-18 | 1978-07-25 | Corning Glass Works | Method for making glass articles with defect-free surfaces |
| DE2928089C3 (de) | 1979-07-12 | 1982-03-04 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung |
| DE3014311C2 (de) | 1980-04-15 | 1982-06-16 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verfahren zur Herstellung von Quarzglastiegeln und Vorrichtung zur Durchführung dieses Verfahrens |
| DE3302745A1 (de) * | 1983-01-27 | 1984-08-02 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von gegenstaenden aus hochreinem synthetischem quarzglas |
| GB8427915D0 (en) | 1984-11-05 | 1984-12-12 | Tsl Thermal Syndicate Plc | Vitreous silica products |
| US4632686A (en) * | 1986-02-24 | 1986-12-30 | Gte Products Corporation | Method of manufacturing quartz glass crucibles with low bubble content |
| US4713104A (en) * | 1986-03-31 | 1987-12-15 | Gte Products Corporation | Quartz glass crucibles |
| JPH085739B2 (ja) | 1986-12-26 | 1996-01-24 | 東芝セラミツクス株式会社 | 石英ガラスルツボの製造方法 |
| US4935046A (en) | 1987-12-03 | 1990-06-19 | Shin-Etsu Handotai Company, Limited | Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
| JPH0692276B2 (ja) | 1988-02-03 | 1994-11-16 | 三菱マテリアル株式会社 | シリコン単結晶引上げ用石英ルツボ |
| JP2602442B2 (ja) | 1988-02-03 | 1997-04-23 | 三菱マテリアル 株式会社 | シリコン単結晶引上げ用石英ルツボ |
| US4880453A (en) * | 1988-12-19 | 1989-11-14 | Corning Incorporated | Method for making glass articles with defect-free surfaces and soluble glasses therefor |
| US5100452A (en) * | 1990-05-17 | 1992-03-31 | Corning Incorporated | Making glass articles with defect-free surfaces |
| JP2933404B2 (ja) * | 1990-06-25 | 1999-08-16 | 信越石英 株式会社 | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
| CA2142282A1 (en) * | 1992-08-13 | 1994-03-03 | Paul Ducheyne | Bioactive material template for in vitro synthesis of bone tissue |
| US5449887A (en) * | 1993-03-25 | 1995-09-12 | Martin Marietta Energy Systems, Inc. | Thermal insulation for high temperature microwave sintering operations and method thereof |
| US5342426A (en) * | 1993-07-16 | 1994-08-30 | Corning Incorporated | Making glass sheet with defect-free surfaces and alkali metal-free soluble glasses therefor |
| JP3124674B2 (ja) | 1993-12-28 | 2001-01-15 | 東芝セラミックス株式会社 | シリコン単結晶引上げ用石英ガラス製ルツボの製造方法 |
| JP2830987B2 (ja) * | 1994-07-19 | 1998-12-02 | 信越石英株式会社 | 石英ガラスルツボ及びその製造方法 |
| DE19541372A1 (de) * | 1994-11-15 | 1996-05-23 | Gen Electric | Tiegel aus geschmolzenem Quarz sowie Verfahren zu dessen Herstellung |
| EP0737653B1 (en) * | 1995-04-10 | 1998-01-14 | Heraeus Quarzglas GmbH | Process for continuously refining of quartz powder |
| US5976247A (en) | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| JP3533416B2 (ja) * | 1996-02-06 | 2004-05-31 | 三菱住友シリコン株式会社 | 単結晶引上装置 |
| JP3764776B2 (ja) * | 1996-03-18 | 2006-04-12 | 信越石英株式会社 | 単結晶引き上げ用石英ガラスるつぼ及びその製造方法 |
| DE19917288C2 (de) * | 1999-04-16 | 2001-06-28 | Heraeus Quarzglas | Quarzglas-Tiegel |
| JP3672460B2 (ja) * | 1999-06-18 | 2005-07-20 | 東芝セラミックス株式会社 | シリコン単結晶引上用石英ガラスルツボの製造方法 |
-
2001
- 2001-03-15 US US09/808,719 patent/US6510707B2/en not_active Expired - Fee Related
-
2002
- 2002-03-05 TW TW091103994A patent/TWI238204B/zh active
- 2002-03-11 KR KR10-2002-0012925A patent/KR100495772B1/ko not_active Expired - Fee Related
- 2002-03-12 DE DE60220112T patent/DE60220112T2/de not_active Expired - Lifetime
- 2002-03-12 EP EP02005568A patent/EP1241141B1/en not_active Expired - Lifetime
- 2002-03-15 JP JP2002073332A patent/JP4462808B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4462808B2 (ja) | 2010-05-12 |
| EP1241141A3 (en) | 2004-01-28 |
| EP1241141B1 (en) | 2007-05-16 |
| DE60220112D1 (de) | 2007-06-28 |
| DE60220112T2 (de) | 2008-01-17 |
| US6510707B2 (en) | 2003-01-28 |
| KR100495772B1 (ko) | 2005-06-16 |
| JP2002326827A (ja) | 2002-11-12 |
| KR20020073384A (ko) | 2002-09-26 |
| US20020166340A1 (en) | 2002-11-14 |
| EP1241141A2 (en) | 2002-09-18 |
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