TWI236683B - Varistor and manufacturing method thereof - Google Patents

Varistor and manufacturing method thereof Download PDF

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Publication number
TWI236683B
TWI236683B TW092118086A TW92118086A TWI236683B TW I236683 B TWI236683 B TW I236683B TW 092118086 A TW092118086 A TW 092118086A TW 92118086 A TW92118086 A TW 92118086A TW I236683 B TWI236683 B TW I236683B
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Taiwan
Prior art keywords
varistor
potassium
manufacturing
patent application
aforementioned
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TW092118086A
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English (en)
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TW200409148A (en
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Ryo Teraura
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Murata Manufacturing Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • H—ELECTRICITY
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    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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Description

1236683 玖、發明說明： 【發明所屬之技術領域】 本發明係關於變阻器之萝 ^ ^ 衣艳方法，特別係關於變阻哭夕 製造方法及使用該製造方法 益之 尸汀衣仔之k阻态，該萝谇十4 包含混合粉碎步驟，其㈣加氧化鋅（zn〇)做為主=方法 =有卸(κ)之化合物做為副成分，再將所得之混合物; 【先前技術】 變阻器之材料組成系一般為人熟知者有SiC系材料 SrTi03^ ,Χ ZnO^ ^ ^ ^ Zn〇.Bi % ^ ^ 系材料等。特別是Zn0-Bi系材料、Zn〇_Pr系材料所形成之 ZnO系’欠阻器與SiC系變阻器或SrTi〇3系變阻器相較之下， 其電壓非線性較佳，驟電流耐量良好，故保護電子機器免 ^:驟電流影響之能力較高，做為驟電流保護元件曰益普及。 但此種ZnO系變阻器中，Zn〇-Pr系變阻器雖然電壓非線 性良好，但與ZnO-Bi系變阻器相較之下，有漏電流較大之 缺點。 為了解決該缺點，例如日本專利公報特公昭63-3〇763號 公報揭示一種ZnO-Pr系變阻器，其做為成分除了 Pr(镨）及 Co(鈷）之外，另添加了 K(鉀）、Rb(铷）及Cs(鉋）中之二種元 素以上及Cr(鉻）、Mg(鎂）及Ca(^ )中之至少一種。 該先前技術在ZnO中添加0 · 1 - 5原子％之pr、〇 · 5 - 5原子％之 Co、合計 〇.〇5-0.5原子％之 K、Rb 及 Cs、0.05-0.5原子％之(^ 、〇.〇1-2原子％之1^[§或€&，以降低漏電流。 86211 1236683 又，5亥先丽技術中，各成分可以用金屬氧化物之形態或 是在^成過私_會變成氧化物之碳酸鹽、氫氧化 物等形態加入主成分中。 义氣化 仁在ZnO糸變阻器中，陶瓷燒結體的結晶粒界被積極地 利用，用2個結晶粒子和丨個結晶粒界形成最小單位的變阻 杰。稭此，可得到優良的電壓非線性，又，可藉由控制添 加物的種類等控制電壓非線性。 Y疋添加元素的偏析或添加元素間的生成物的存在等 會增加不良粒界’而損及電壓非線性。特別m緣電阻等 又阻益特性與結晶粒界上析出之鹼金屬高度相關。因此， 特別是在結晶粒界數較小的低電壓變阻器令，上述添加元 素之偏析造成之不良粒界之生成及組成之偏移導致靜電放 電（Electrostatic Discharge，以下稱「esd」）特性的降低， 亚成為變阻電壓VlmA及絕緣電阻汛的劣化及不穩定的主要 原因。 即若如上述先前技術般以氧化物、碳酸鹽、氫氧化物 、氟化物等之易溶性鉀化物之形態添加鹼金屬之鉀，則在 混式粉碎時鉀會溶出到一次衆料中之水中，在脫水處理中 鉀會流出，所得原料組合物之組成即會變動，即造成組成 偏移。如此’則難以得到具有良好而安定的變阻器特性的 高品質變阻器。 又’鉀化合物若溶解於水中，聚料的PH值會變動，έ士果 使毀料之黏度上昇’造成混合、粉碎力之降低及分散^之 降低。即，在固體與液體混練而成的一次漿料中，各元素 86211 1236683 具有ζ電位（傑塔電位），而被靜電排斥力所分散，但該G電位 會因—次漿料中之氧離子指數PH而變動。因此，若鉀化合 物溶解於水中，pH變動’ ς電位變成「。(零)」，則—次激： 中的粒子不再互相排斥，無法保持分散系統。結果產生粒 子間的蚨聚’造成漿料黏度的上昇、混合及粉碎力的降低 及分散性的降低。 — 在脫水處理後的乾無處理中，亦容易因鉀的再結 而產生破聚或偏析，因而使分散性降低，使變阻特性進 步降低。 土本，明係鐘於上述問題點而完成者，其目的在於提供可 、二门之冋〇口貝之變阻器之製造方法及該變阻器，其變阻 電堅VlmA及絕緣電阻!尺等變阻特性良好，且可抑制其變動。 =達成上述目的’本發明之變阻器之製造方法包含在主 成刀之氧化鋅中加入含有鉀的化合物做為副成 >，再將之 屬式粉碎之混合粉碎步驟，其特徵為使用難溶性鉀化合物 做為前述含有鉀的化合物。 …、I月的製仏方法中，由於鉀係以難溶性鉀化合物之形 、〗力故在濕式混合粉碎步驟中，不會因鉀流出到以水 為溶劑的一次漿液中而造成組成變動。又，由於可以避免 鉀溶解於一次渡液φ 曰 欠一-人聚液不會因p Η變動而使黏度 、Υ ^可抑制此D •粉碎力的降低或分散性的降低。又， ;* &中Φ可抑制鉀的再結晶化所造成的凝聚或偏析 可衣侍可低電壓驅動可且可靠度優異的變阻器。 86211 1236683 又’本發明又關於上述製造方法所製造之變阻器。 即，由於在製造步驟中鉀不會流出或溶解，故可製得分 政性良好、在低電壓下亦可驅動、變阻器特性優良、且可 靠度高的變阻器。 【實施方式】 以下茲詳細說明本發明之實施態樣。 圖1為顯示本發明之變阻器中之積層型變阻器之一實施 態樣之縱剖面圖。 該積層型變阻器係將p t或A g等導電性構件所構成的内部 電極2〜5埋設於陶瓷燒結體丨中，並於陶瓷燒結體丨的兩端 部形成由Pt或Ag等導電性構件所構成的外部電極6、7。其 中内部電極2，4與外部電極6電性連接，内部電極3，5與外 部電極7電性連接。 、 其次茲詳述上述積層型變阻器之製造方法。 首先，依照所要的組成，各量取特定量的主成分之以〇 及副成分之ΡΓ6〇1|、C〇3〇4、CaC〇3、Al2〇3，再量取特定量 的難溶性鉀化合物。
其中鉀化合物與其他添加物不同而使之難溶性之理由如 下。 D 使用K2〇或Κ<〇3等易溶性鉀化合物之時，在後述的濕式 粉碎後的脱水處理中，鉀會流出，使所得變阻器中產生所 謂組成變動。或是鉀化合物溶解於一次漿液中，一次漿液 的ΡΗ變動，結果黏度上昇，各構成成分的分散性降低。又 ，於乾燥處理中’鉀成分再結晶化，其後凝聚.偏析，產 86211 1236683 散劑做為分散苑I，@ > / 片 將夕緩酸糸分散劑添加於量取物中。 -系刀政制的添加I為〇」〜5 · 〇 wt%之理由如下。 夕羧^不刀政劑的添加量不到〇. 1 wt%時，分散劑對檨成 變阻器的成分抑；λα Χ 、 =风刀粒子的吸附不足，在濕式粉碎時的一次漿液 的站度艾问，在濕式粉碎時無法得到所要的粉碎力，難以 女。疋地仵到所要的分散性。另一方面，其添加量若超過5.0 wt% ’則由於添加量過多，&吸附於一個成分粒子的分散 Μ 〃吸附於其他成分粒子的分散劑接觸，結果可能使分散 劑互相結合而再凝聚。因此分散劑的添加量，_於主^ 分與副。成分之合計量，較佳為G.l〜5.G wt%，特佳為0.5〜 3.5 wt%。又，多敌酸系分散劑可使用例如多魏酸胺鹽或多 羧酸鈉鹽等。 ι 濕式粉碎結束後，進行脱水.乾燥處理，製得造粒粉。 其後，將所得造粒粉在特定條件下進行預燒處王里，其後將 預燒處理後的造粒粉充分地粉碎，製得預燒粉末。 其後在預燒粉末中加人有機黏合劑、有機溶劑、及有機 可塑劑，調整薄片成形用二次漿液。 其次將所製得之二次漿液用到刀法成形成薄片狀，形成 圖2所示之具有特定厚度的陶瓷胚片8〜13。 其次製備以Pt為主成分之導電膏（以下稱「pt膏」），使用 Pt膏於陶£胚片9〜i2之上表面進行網版印刷，加上做為内 部電極的導體圖案14〜17。此處導體圖案14〜⑺足陶究胚 片9〜12的一端面9a〜12a開始延伸，另一端則位於陶瓷胚 片9〜12上，而形成柵攔狀。其後將印有導體圖案的陶瓷胚 86211 1236683 片9〜12，再用陶瓷胚片8、13做為保護層夾持陶瓷胚片s 〜丨2’壓着之，形成未燒成的積層體。 其次將該積層體裁斷成所要尺寸後，將其收納於氧化鋁 製匣中，進行脱黏合劑處理後，進行燒成處理，製得埋設 有内部電極2〜5的直方體形狀的陶瓷燒結體丨，即=2後的
Ag膏」），將 附處理，形成 其後製備以Ag為主成分的導電膏（以下稱「 Ag a塗布於陶瓷燒結體1的兩端，其後進行燒 外部電極6、7，而製得積層型變阻器。 如此，在本實施態樣中，於混合粉碎步驟中，由於係將 鉀以KCl〇4或KHC4H4〇6等難溶性鉀化合物（即，在溫度乃它 下對100 g水溶液之溶解量在3 g以下之鉀化合物）之形態添 加於zn〇中，故在脱水處理中鉀不會流出或溶解’除 使其在-次聚液中的分散性良好外’而且在乾燥處：中可 避免鉀的再結晶化造成的凝聚.偏析’藉此可得到變阻器 特性安定、可靠度優異之積層型變阻哭。 17 又’由於在混合粉碎步驟中於量取物中添加〇卜5 〇赠。 的多羧酸系分散劑，故在與難溶性鉀化合物的相互作：° 可使組成成分均勾地分散，結果即使進行燒成處理 抑制鉀析出於結晶粒界而產生不良粒界的情形。藉此。— 易並低價地製造具有所要的變阻器特性且可靠度‘異:今 層型變阻器。 又& 、積 其次兹以具體貫施例說明本發明。 86211 1236683 其次準備各實施例丨〜4及比較例丨〜丨2的各試驗片各丨〇〇 個，測里變阻為電壓VlmA、變阻器電壓變動、電壓非 線I*生係数α初期絶緣電阻IR、初期絶緣電阻I r的變動、 及顯示ESD特性的ESD耐壓。 於此艾阻杰電壓V 1 mA係測量流過1 ma的直流電流時各 。式焉致片的兩電壓而求得。 又，電壓非線性係数α係根據〇.丨mA的直流電流過時各 試驗片的兩端電壓及變阻器電壓VimA以公式（1)算出者。 1〇g(HA) ⑴ 初H象電阻IR係使用超高電阻/微小電流計（阿得萬測 ^(Advantest)公司製「R834〇A」）將變阻器電壓Vi心的6〇% 的直流電壓施加〇 ·；[秒而測得者。 又又阻，電壓V1mA及初期絶緣電阻丨尺的變動係根據變 阻器vlmA及初期、絶緣電阻IR的最小値及最大値求出其變化 率，變阻器電壓vlmA變動係以15%以下的變動為良品，絶 緣電阻IR的變動係以30%以下的變動為良品。 又，E S D耐壓係如下算出。 將符合IEC(國際電氣標準會議
算出變阻器電壓變化率△VhA/V 即 之E S D脈衝施加於各試驗片 變阻器電壓差AVlmA與施加 器電壓變化率Δν1ηιΑ/ν1πιΑ，
AlogIR )801.2規格的圖3所示 的兩端各10次，從施加前後的 前的變阻器電壓VlmA算出變阻 再异出施加前後的絶緣電阻差 ⑴八在±1 0%以内且 86211 15 1236683 力口有難溶性鉀化合物，故可將變阻器電嚴 a V 的變動抑制 到1 5%以下，並將初期絶緣電阻IR的變動 Ή市^至^ 3 0〇/〇以下。 即，可抑制變阻器特性的變動，並改善ESD特性。 其次’對各實施例及比較例的變阻器，用Icp光谱分析 (Inductively Coupled Plasma Emission Spectroscopy)，進行 鉀的組成分析。其後根據加工前含量（原始原料的鉀含量） 及加工後含量（燒成後的變阻器中的鉀含量）算出鉀含量的 變化量，或將變化量除以加工前含量，算出變化率。 下述表2所不為卸的組成分析結果。 表2 加工前含量 (atom%) 加工後含量 (atom%) 變化量 (atom%) 變化率(%) 實施例 比較例
0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.47 0.47 0.48 0.45 0.22 0.16 0.28 0.25 0.33 0.15 0.11 0.03 0.03 0.02 0.05 0.28 0.34 0.22 0.25 0.17 0.35 0.39 6 6 4 10 56 68 44 50 34 70 78 0.5 0.14 0.36 72 0.5 0.18 0.32 64 10 11 12 0.5 0.5 0.5 0.23 0.21 0.14 0.27 0.29 0.36 54 58 72 86211 -17- 12366^3 變者就此等各實施例21、22的變阻器及比較例21、22的 σο σ的°式、片各10 0個，與第1群實施例同様地測量變阻 為電 、土 V 1 m A、垓變阻器電壓V i m Α的變動、電壓非線性係数 ^ 、 ' 初期絶緣電阻IR、該絶緣電阻IR的變動，再測量驟辦 電流耐量。 驟增電流耐量係如下算出。 即’如圖4所示，將波頭長8閂、波尾長2〇…的8 X 2〇 的一角電机波隔5分鐘隔施加2次，從施加前後的變阻器電 壓差ΔΥ^α及施加前的變阻器電壓VlmA算出變阻器電壓變 化率△VimWlmA，再算出施加前後的絶緣電阻差AlogiR。 接著异出變阻器電壓變化率為±1〇0/〇以内且絶 緣電阻差AlogIR為1/2之最大電流波高値，做為驟增電流耐 量，以30 A/mm2以上為良品。又，Cf為波高値、p為波高 點、Q為半波高點。 下述表3所示為各實施例及比較例中之測定結果。 表3 ____^^ ----一 分散劑名 變阻器 電壓vlmA (V) 變阻器電 壓VlmA的 變動(％) 電壓非 線性係 数α㈠ 絶緣 電阻IR (ΜΩ) 絶緣電 阻IR的 變動(％) 驟增電 流耐量 (A/mm2) 實 施 21 多羧酸 胺鹽 9.1 5 23 7.3 17 45 例 了2 多羧酸 鈉鹽 9.9 8 20 7.5 15 47 比 較 ^21 多磺酸 胺鹽 9.3 6 21 8.1 14 40 例 ^2 1——"***" 多磺酸 鈉鹽 9.7 5 23 8.5 14 40 86211 19 1236683 如表3所示，實施例21、22的變 阻器均具有良好的驟增特性，且*未☆ 4例2卜22的變 施例卜4相較之下，變阻器電壓;刀散劑的表1的實 又動幸又低。即，藉由分散劑的添加 的 分散劑的相互作用下γ 、岭性鉀化合物在與 η用下組成成分均勻地八私 粒界的產生。 刀政，而可抑制不良 惟比較例2 1，22的變阻器中，變 又阻σσ特性本身雖鈇良奸 ，但由於使用多磺酸系分散劑 …、好 睹合“ η ^做為分散劑，故在燒成處理 mi ^ ^ 勿谓切耐久性不足的缺點。 因此’考慮到環境面及耐久性， 孝乂 t添加多幾酸系分散 划’即使使用多竣酸系分 '、月片，亦經確認可抑制變阻器電 & VlmA及初期絶緣電阻戊的變動。 〈第3群貫施例> 本實施例係改變分散齋丨的、天 曰 文刀欣4的添加1而評估各種變阻器特性。 使用咖办〇6做為難溶性卸化合物，使用離子交換水及 做為分散劑的多羧酸胺鹽’製作分散劑的添加量各显的各 種積層型變阻器’算出㈣黏度及初期絶緣電阻m及其變 動0 ^ p衣作刀放劑的添加量在〇·1〜5·〇 wt%範圍内的積層型 變阻器（實施例3卜42)及添加量為G.G5 wt%、5 5G wi%、6 〇〇 、％的積層型變阻器（比較例3 1〜33)，用簡易黏度計測量裝 、々度且以與上述第】群實施例相同的方法 ，阻财其變動。又，本第3群實施例中，離子交換;；= !與第2群實施例才目同，肖前述量取物之重量# 4，算出相 86211 -20- I236683 對於分散劑的添加量的聚液黏度及初期絶緣電阻IR及其變 動。 下述表4所示為其測定結果。
分散劍添 加量(wt%) 黏度(Pa · s) 絶緣電阻 IR (ΜΩ) 絶緣電阻IR的 變動(％)
如表4所示，比較彳|
中’由於分散劑的添加量為〇 一叭’較少，故分散亦丨丨斟 里钓U ^ ^ +原料粉末粒子的吸附不， 不女定，漿液黏度高達^ 私期絶緣電阻IR的變動高達320%。 n 運.500 Pa · s，分散性亦降供 -21 - 0211 1236683
可低電壓驅 防期絶緣電阻的變動降低的變阻器。 查步驟中鉀成分不會流出或溶解，原始原 ’故所得變阻器之漏電流小，可低電壓驅 憂良，且可靠度高。 産業上利用性 如上所述，央& ^ 。 ^ 本發明之變阻器之製造方法適於製造一種變 阻為’其保護電子機器免受驟增電流影響之能力高，可做 為各種電子機器的驟增防護元件等使用。 【圖式簡單說明】 圖1為顯示本發明的製造方法所製造之變阻器中之積層 型變阻器之一實施態樣之剖圖。 圖2為顯示本發明之變阻器之製造方法之重要步驟之圖。 圖3為ESD耐壓的測定中所用ESD脈衝的波形圖。 圖4為測是驟增（surge)電流耐量時使用之驟增電流之波 形圖。 【圖式代表符號說明】 1 陶瓷燒結體 2〜5 内部電極 6，7 外部電極 8〜1 3 陶瓷胚片 14〜17 導體圖案 86211 -23 -

Claims (1)

  1. 1236搬 中=118086號專利申請案 尺申請專利範圍替換本(94年4月） 拾、申請專利範圍·· 該步驟 做為副 種變阻器之製造方法，其包含混合粉碎步驟， 係將在主成分之氧化鋅中加入含有鉀的化合物 成分’並濕式粉碎之，其特徵為： 别述含有鉀的化合物係使用難溶性鉀化合物。 如申請專利範圍第1項之變阻器之製造方法，其中前述 副成分另包含含有镨之化合物及含有鈷之化合物。V 如申請專利範圍第丨或2項之變阻器之製造方法，复中& =難溶性卸化合物在饥之溫度下對1〇〇 §之水溶液： 月，J述鉀之溶解量為3 g以下。 4·如申請專利範圍第3項之變阻器之製造方法，其中前 難溶性鉀化合物包含選自過氣酸卸、酒石酸氣卸、^ 在白酉文鉀及六硝基録酸卸中之至少1種。 5. 如申請專利範圍第丨項之變阻器之製造方法，其中前 混合粉碎步驟係添加多羧酸系分散劑而進行者、。别 6. 如申請專利範圍第4項之變阻器之製造方法，其中前 多竣酸系分散劑的添加量，相對於主成分的重量與副 分的重量合計的總重量，為0.1〜5.0重量％。 ’、 7. 如申請專利範圍第W之變阻器之製造方法，其中前 混合粉碎步驟係在水之存在下進行。 八 ' 8. 如申請專利範圍第旧之變阻器之製造方法，盆另勺 將前述混合粉碎步驟所製得之材料脱水、乾燥=製= 拉^之步驟；預燒前述造粒粉，製得預燒粉末之步驟 於刖述預燒粉末中加入黏合劍及 ° ^及，谷劑，調製薄片成形 86211-940429.DOC . -1 - Τ5ί 一之步驟；將前述薄片成形用漿液成形成薄片狀，製 作陶瓷胚片之步驟；於前述陶瓷胚片上形成做為内部電 極之導體圖案之步驟；將形成有導體圖案之陶瓷胚片積 層，製作積層體之步驟；燒成前述積層體之步驟；及在 燒成之前述積層體之表面形成外部電極之步驟。 86211-940429.DOC 2-
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