TW591089B - Slurry composition for use in chemical mechanical polishing of metal wiring - Google Patents
Slurry composition for use in chemical mechanical polishing of metal wiring Download PDFInfo
- Publication number
- TW591089B TW591089B TW091115732A TW91115732A TW591089B TW 591089 B TW591089 B TW 591089B TW 091115732 A TW091115732 A TW 091115732A TW 91115732 A TW91115732 A TW 91115732A TW 591089 B TW591089 B TW 591089B
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- pdta
- metal
- polishing
- peroxide
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 81
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 title claims abstract description 29
- 239000000126 substance Substances 0.000 title claims abstract description 10
- 239000002002 slurry Substances 0.000 title abstract description 4
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 11
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 150000002978 peroxides Chemical class 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007788 liquid Substances 0.000 claims description 49
- 229910052721 tungsten Inorganic materials 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000004696 coordination complex Chemical class 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- -1 benzamyl peroxide Chemical class 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- QJZYHAIUNVAGQP-UHFFFAOYSA-N 3-nitrobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2(C(O)=O)[N+]([O-])=O QJZYHAIUNVAGQP-UHFFFAOYSA-N 0.000 claims 1
- 239000004343 Calcium peroxide Substances 0.000 claims 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 claims 1
- 235000019402 calcium peroxide Nutrition 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 239000004021 humic acid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 230000008569 process Effects 0.000 abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 10
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000227 grinding Methods 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 23
- 239000010937 tungsten Substances 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 15
- 230000001590 oxidative effect Effects 0.000 description 10
- 239000007800 oxidant agent Substances 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000003446 ligand Substances 0.000 description 7
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 5
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000001630 malic acid Substances 0.000 description 5
- 235000011090 malic acid Nutrition 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MJOQJPYNENPSSS-XQHKEYJVSA-N [(3r,4s,5r,6s)-4,5,6-triacetyloxyoxan-3-yl] acetate Chemical compound CC(=O)O[C@@H]1CO[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O MJOQJPYNENPSSS-XQHKEYJVSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 206010061217 Infestation Diseases 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000015278 beef Nutrition 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- RBWSWDPRDBEWCR-RKJRWTFHSA-N sodium;(2r)-2-[(2r)-3,4-dihydroxy-5-oxo-2h-furan-2-yl]-2-hydroxyethanolate Chemical compound [Na+].[O-]C[C@@H](O)[C@H]1OC(=O)C(O)=C1O RBWSWDPRDBEWCR-RKJRWTFHSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
591089 直號 91115732 五、發明說明（1) 〈發明領域〉 月 曰 修正 本發明大致上是有關用於半導體元件製程中化學機械 研磨（chemical mechanical p〇lishing’CMp)之研磨液 (slUrry)組合物，更詳細來說是用於晶圓的鎢層平坦化化 學機械研磨之研磨液組合物。 〈發明背景〉 在積體電路製程中，含有鎢（tungsten)的金屬具有多 種應用。例如，形成金屬層以互相連接或構成位於矽晶圓 上眾多的導電元件。現今，製造積體電路是以嵌入適當的丨 兀件，如二極體與電晶體於矽晶圓上或其中。同時，一再’ 被重複形成不同層之絕緣材料及導電材料於整個元件表面 的製程。在積體電路中，接觸孔^⑽“以h〇ie)或介層孔 (via)的特性依據著絕緣材料特質，且使導電材料填滿介 層孔以提供一垂直接觸，其能穿透絕緣材料並接觸嵌於晶 圓上元件群中的適當元件。當鋁（alunminum)用於作為導 電材料時，其完全填滿介層孔的内部是不恰當的。典型而 a ’使用鎮填滿介層孔可適用於化學氣相沉積（che ^丨c 1 vaper deposition ，CVD)製程。在化學氣相沉積過程 中’鶴不僅填滿介層孔而且覆蓋整個絕緣層的表面。在過_ 多的鎢去除之後，鋁接線形成於絕緣層之上與介層孔之 習知’一種反應性離子I虫刻法（r e a c t i ve i on etching，RIE)製程使用於傳統半導體製程鎢去除步驟
591089
(tungsten-elimination step)。然而，rie 製程具有一嚴 重缺點，，其極易過度蝕刻鎢層甚至部分蝕刻填充於' 介層孔 的鎢，導致與形成於鎢層上的鋁線的接觸不良。此外，任 何殘存於晶圓上的鎢微粒會嚴重的使半導體積體電路結果 淪為次極品。為了解決R I E製程的問題，於是發展出化學 機械研磨法（chemical mechanical p〇Hshing，CMp)。 依據半導體積體電路的層數與集積度的增加，CMp製 程已被導入此技術中。在CMP製程中，提供一半導體晶圓 予結合旋轉與移動的執道式裝置，當與聚氨酉旨 (polyurethane)構成之研磨墊及組成含有研磨劑 (abrasive)與多種其他成分之研磨液接觸時，將平坦化晶 圓表面。通常，研磨液用於如CMP製程（自此之後，參考= CMP研磨液）之組合物提供化學與機械兩種研磨效果〔而蝕 刻液、氧化劑、酸與分散劑負責化學研磨功能以及研磨 劑、金屬氧化物微粒負責機械研磨功能。這兩種研磨功能 使晶圓外表面的任何凸塊能被選擇性的蝕刻與研磨以達到 晶圓表面的最佳平坦化。 根據研磨結構，CMP研磨液可歸類為針對絕緣層如二 氧化石夕（si(U之氧化物研磨（oxide_polishing)w磨液及 針對金屬層如鶴層或銘層之金屬研磨（metal_p〇Ushing) 研磨液。使用於化學研磨功能的這兩種CMp研磨液組合物 是有所差異的。 同時，傳統金屬研磨的CMP研磨液具有典型的問題， 在於氧化物侵#(〇xide erosion)導因於金屬、阻障金屬
5008-5030-PFl(N).ptc 591089 __案號 91115732 五、發明說明（3) 年月日 條正 (barr i (corrο 侵名虫或 的其他 些問題 化力。 來自增 免的造 化物侵 er metal)與介電層之間研磨率的不同及腐姓 s i ο η )導因於氧化劑成份使金屬層過度餘刻。如果 腐蝕發生於CMP製程中，則與沉積在研磨金屬表面 金屬層會接觸不良，因而導致1C不能正常工作。這 的引起主要認為來自研磨液的氧化劑具有過強的氧 直至今日’達到對於傳統半導體所須之研磨率主要 加氧化劑的量或強度於CMP研磨液。因而，不可避 成氧化物侵蝕、腐蝕、坑洞、盤狀凹陷等等。如氧 钱與腐蝕分別示意於第1 a圖與第1 b圖。
此外，為了鎢的強力研磨目的，在酸性條件下製備金 MP研磨液，且在如此低的pH值通常會降低研磨顆粒的 分散性’其導致研磨液的研磨效果再現性明顯降低。 〈發明概要〉 ^ 本發明是有關於以下發現：加入丙烯二胺四乙酸酯一 金屬錯化物（pr0pylenediaminetetraacetate_metal complex)與羧酸（carb〇xylic acid)於一含有少量以過氧 化物與無機酸為氧化劑的無選擇比金屬CMp研磨液，可明 顯改善研磨率、晶圓内的不均勻度、晶圓與晶圓間的不均 勻度和研磨液的分散性穩定度。
本發明的特徵在於一種研磨液組合物，用於金屬接線 化學機械研磨，組合物實質上包括：過氧化物、無機酸、 PDTA-金屬錯化物、羧酸、金屬氧化物粉末。 本發明較佳實施例之CMP研磨液組合物是以散佈在去 離子水中製備而得（i )組合物以過氧化物及無機酸作為一
5008-5030-PFl(N).ptc 第9頁 -^^1115732 五、發明說明（4) 曰 修正 溫和氧化劑；（丨 子可避免磨耗之衰破，化物包含丙烯二胺四乙酸酯配位 並改善分散性穩定声；，，、再附著於欲被研磨的金屬層表面， 再現性與分散性鞾^择·1 1 1 )羧酸有助於改善研磨效果的 劑。 疋又，及（1 V )金屬氧化物粉末作為研磨 達到。 $所有特斂與其他特徵將從以下說明中成功 〈發明的詳細說明〉 在本發明φ，m ^ p 劑，較佳者為I氧化y化欲被研磨的金屬基板的氧化 peroxlde)^化苯物甲如過氧化氫（⑽㈣ ir 1 · 本甲醯基（benz〇y 1 peroxide)、過氧 ㈣（―Peroxlde)、過氧化鋇（barium 、乳 Γ二1與過氧化納(sodiu…，並…到氧 =磨液的分散的穩定度，更佳者m 曰匕高的氧化能力(。xldationpotentiai)“ 1: „艮低以使其能避免強氧化劑所造成的問題，除 ίιί 過量情況下使用。較佳者為本發明的研磨液組 成3有0.5〜5重量百分比（wt%)的過氧化物。 為了加強研磨液的氧化力，除了過氧化物外，還使用 至少一種無機酸。較佳無機酸可以硝酸（ni tric acid)、 硫酸（sulfuric acid)、鹽酸（hydrochloric acid)及磷酸 (phosphoric acid)為例。至於研磨之後的表面污物，硝 酸是最佳選擇。在本發明中，無機酸也可當作一酸鹼度控 制劑（pH-control 1 ing agent)以促進鎢的氧化。本發明的
5008-5030-PFl(N).ptc 第10頁 591089
(W t 0/〇 )， 研磨液組成中，無機酸的較佳含量為〇. 〇〇丨〜5 更佳為〇·〇〇1 〜3·〇 (wt%)。 加入過氧化物與無機酸分別超過上述範圍的 氧化_#、腐#、“、盤狀即J 曰發生’…反的情況下，即無法達到期望之研磨 $型i也，CMP研磨液組合物包含少量溫和的氧 屬I I ^與無機酸，使其能以非常相似的研磨率研Θ磨^ 屬層與屏P早層（主要為鈦/氮化鈦，n/Ti
=，但其不適用於傳統的半導體製程因其過慢免:研化磨物 率雖然添加過多的氧化劑可增加研磨率，作它合 同的問題，包括氧化物侵敍與腐麵，且因其強二;二 MP研磨液難以掌控。取而代之，我們採用特殊金屬錯化 物以有效達到半導體製程所需之研磨率。金屬錯化物0含 一丙烯二胺四乙酸酯（PDTA)配位子與一金屬（M)原子，其 中Ο-M的鍵結能低於〇_¥的鍵結能。於此之後，如金屬錯介 物參考為PDTA-M錯化物π或簡化為” pdta-Μ π。
PDTA-Μ錯化物能增加研磨率之可能機制解釋如下： PDTA配位子與氧化鎢（tungsteri 〇xide，Wx〇y)形成錯化 物’其使來自於氧化鎢層的氧化鎢在CMp製程中被磨耗， 並藉由反應系統移除之，促進鎢層的氧化速率。通常，儘 管使用強氧化劑，仍不能克服因研磨進行而累積磨耗的金 屬氧化物’其使研磨率降低，因為金屬氧化物之再附著於 欲被研磨的金屬層表面而抑制研磨。本發明之目的在於解
5008-5030-PFl(N).ptc 第11頁 591089 案號 91115732 _a. 曰 修正 五、發明說明（6) 決此再附著的問題。PDT A配位子為一多芽配位子，其具有 四個配位子原子因此易形成一螯合物PDTA-M。藉由所選擇 的金屬離子以使0-M的鍵結能低於0-W的鍵結能，其有助於 PDTA-Μ錯化物能在研磨製程中自發性的轉化為pDTA-W錯化 物。例如，在P D T A - F e的例子，0 - F e的鍵結能是9 3 · 3千卡/ 莫耳（Kcal/mol) ’當0-W的鍵結能是1 6 0 K c a 1 / ιπ ο 1時，配 位於PDTA配位子的Fe原子因而容易被W原子取代，亦即 PDTA-Fe錯化物轉化為PDTA-W錯化物。因此，藉由使用 PDTA-Μ錯化物，氧化鎢的再附著將有效的抑制，因而包含 研磨率與選擇比在内的研磨效能之再現性也被改善。 當就成本與研磨氧化金屬的吸收效率而言，pDTA_Fe錯 化物是最佳者，任何金屬原子皆可替代鐵（Fe)原子，只^ 其可，PDTA配位子形成配位鍵且與氧原+的鍵結弱於鶴原 子與氧原子的鍵結。可不受限的舉出pDTA_金化物 明ί”含mA_N^PDTA_C〇°第2圖*意說明使用 的工作機：：液組合物在鎢層研磨過程中錯化物 能且有再現性士 後，以刮傷及研磨率示之的研磨效 液組合物以作為研磨劑 /如(sillca P⑽der)於研磨 鹼度下，二氧化欲& ^夺在一般金屬研磨製程所須之酸 等電點具有最小絕對：工：二明顯下降，因為二氧化矽的 將自發性地進行-氧化^ ^ Η 4。因此，當時間流逝， 丁一乳切微粒的再凝結㈣成大的聚集物 5008-5030-PFl(N).ptc 第12頁 591089
導致沉澱與刮傷 劑微粒凝結，因 定度。 ° PyTj-Μ錯化物防止含有二氧化矽的氧化 而提同本發明研磨液組合物的長期儲存穩 含量1於1”研磨液組合物，較佳為加入叫Μ錯化物 =Α扭t%，更佳為°.05〜〇.3Wt%。如果加入過 半導σ化物，研磨液組合物中的金屬雜質增加而使 牛I體產品的可靠唐@ 入旦 』罪度下降另一方面，如果PDTA-Μ錯化物 1 i Γ足，捕捉氧化鎢的效率與穩定研磨劑分散性的效率 會降低。
^在本發明中使用過氧化氫為氧化劑，研磨液組合物合 氧化力視時間而變得較低因為過氧化氫分解為氧與水。相 據這項發現，我們使用至少一羧酸（carb〇xyHc acid)， 其具有一或多個羧基（car|3〇xyliC gr0Up)以更加提昇本屬 明研磨液組合物的磨效率再現性及儲存穩定性。可不受砰 的舉出缓酸的例子’其中包括醋酸（ace^ic acid)、擰檬
酉夂（citric acid)、戊二酸（glutaric acid)、乙醇酸 (glycolic acid)、甲酸（formic acid)、乳酸（lactic acid)、頻果酸（malic acid)、順丁 稀二酸（maleic acid)、草酸（oxalic acid)、鈦酸（phthalic acid)、琥 ί白酸（succinic acid)與酒石酸（tartaric acid)，其中 最佳者為蘋果酸。本發明研磨液組合物的羧酸含量較佳為 0· ：1〜10 wt%，更佳為〇. ：1〜2 wt%。過多的羧酸超過10 wt0/〇 可能更降低研磨液組合物的分散性，然而不足量的羧酸無 法達到預期效果。
5008-5030-PFl(N).ptc 第13頁 591089
W腐上现乳化劑氧化的鎢層之研磨 Μ可使用金屬氧化物的粉末，如氧 在本發明中，用以研磨上沭翁 7 一 乳化矽（s 1 1 1 ca)、氧化 ，/事、氧化鈽（Ceria)及二氧化鈦（titania)， 二氧化石夕因其產生最佳的分散性與最小的刮傷 機率。本發明研磨液組合物，金屬氧化物的粉末含量最好 在0.卜10 Wt%，更佳為卜7wt%。如果超過1〇 wt%，研磨液 組合物分散性的穩定度不佳，再者發生刮傷與氧化物侵 蝕。如果低於0.1 Wt%，無法達到對於一般半導體製程較 佳的研磨率。 參考下列實施例能更清楚了解到本發明。必須了解到 下列實施例並無意指用任何手段去限定本發明的範圍。從 母一貫施例得到相對應研磨液組合物的研磨效能評估如 下： •研磨機：型號No· 6EC(STRASBAUGH，美國） •研磨條件： -墊的形式：IC1 40 0/SubaIV Stacked(Rodel，美國） -平臺速度：每分鐘75轉 -捲起（Quill)速度：每分鐘35轉 -壓力：4碎/平方英忖（psi) -背壓：0 psi _
-溫度：2 5 °C -研磨液流量：2 5 0毫升/分鐘 •研磨基板：使用覆蓋著鎢的晶圓為測試晶圓，每一 片測試晶圓已經經過1，0 0 0埃HT0層、1，〇〇〇埃TiN層以及j
5008-5030-PFl(N).ptc 第14頁 591089 ____案號 91115732 五、發明說明（9) 曰 修正
〇 〇 0埃鑛層的連續沉積於多晶石夕晶圓。 〈實施例1 >PDTA-Fe的含量與研磨率的關係 加入 50 克的 Aerosil 90G(Degussa AG，德國）、9i7 5克的去離子水、1 0· 〇克的蘋果酸、〇· 3克的硝酸及2〇· 〇克 的過氧化氫於一燒瓶，之後以2，〇 〇 〇 rpm轉速攪拌2小時， 再於l，200psi壓力下高壓分散。產生的研磨液通過一 1微 米（//m)的濾器而濾出，且加進〇·〇克、〇·〇2克、4.0克气 1 〇· 0克的PDTA-Fe以提供各研磨液組合物。在上述的條件 下使用相對應研磨液組合物研磨測試晶圓（覆蓋著鎢的晶 圓）2分鐘。結果列出於表1與圖3。 表1 研磨液 PDTA-Fe 1#的研磨率 P-TEOS”的研磨率 I 〇_〇克 863埃/分鐘 48埃/分鐘 II 0.02 克 1，〇〇6埃/分鐘 53埃/分鐘 III 4·0克 2,445埃/分鐘 87埃/分鐘 IV 10,0 克 2,718埃/分鐘 105埃/分鐘 * W:鎢 ** P-TEOS:聚四乙基對位梦酸鹽(poly_tetraethylorthosilicate) 〈實施例2> PDTA-Fe對於氧化物侵蝕與腐蝕的影響 _ 在上述的條件下，分別使用實施例1中的研磨液I I I， 與其他研磨液組合物其具有與研磨液111相同的組合物除 了 Fe(N03)3或ΚΙ03取代PDTA-Fe之外，以研磨具有線寬0.2
5008-5030-PFl(N).ptc 第15頁 591089 SE 91115732 年 月 曰 五、發明說明（10) // m圖案的晶圓。結果列出於表2 樣本 PDTA-Fe Fe_)3 κιο3 W的研磨率 氡化物 腐蝕 侵飯 1 4_0克 〇_〇克 〇_〇克 2,486埃/分鐘 85埃 10埃/分鐘 2 〇·〇克 15_0 克 〇〇克 2,445埃/分鐘 460埃 120埃/分鐘 3 〇_〇克 〇_〇克 20.0 克 2,718埃/分鐘 328埃 150埃/分鐘 〈實施例3>蘋果酸含量與研磨效能再現性的關係 除了改變蘋果酸含量之外，根據上述實施例1中研磨 液I I I的相同製備手法製備一系列的研磨液組合物。在上 述的條件下，使用相對應研磨液組合物以研磨測試晶圓 (覆蓋鎢的晶圓）2分鐘。結果示於圖4。 〈實施例4> PDTA-Fe對於研磨液組合物的分散性穩定度的 影響 u 提供上述實施例1中研磨液I 11，與對照組研磨液組合 物其具有與研磨液In相同的組合物除了不含PDTA — Fe之 外’於其製備後〇天、30天、60天和120天在上述條件下做 一研磨測試。研磨測試結果與相對研磨液組合物的平均顆 粒大小一併列出於表3，顆粒大小是由ELS80 00 (〇stuka Co. ，Japan)裝置量測得到。
5008-5030-PFl(N).ptc 第16頁 591089 年 修正 _案號 91115732 五、發明說明（11) 表3 樣品 PDTA-Fe 製備後的 天數 W的研磨率 平均顆粒大小 1 〇〇克 0 863埃/分鐘 185毫微米 2 4.0克 0 2,445埃/分鐘 185毫微米 3 〇〇克 30 425埃/分鐘 210亳微米 4 4_0克 30 2；375埃/分鐘 186毫微米 5 〇〇克 60 388埃/分鐘 248毫微米 6 4_0克 60 2,485埃/分鐘 188毫微米 7 〇·〇克 120 376埃/分鐘 447毫微米 8 4_0克 120 2,418埃/分鐘 188毫微米
〈實施例5>硝酸與過氧化氫的含量對研磨效能的影響 除了改變硝酸或過氧化氫含量之外，根據上述實施例 1中研磨液I I I的相同製備手法製備一系列的研磨液組合 物。在上述的條件下，使用相對應研磨液組合物以研磨具 有線寬0. 2 # m圖案的晶圓2分鐘。結果示於表4。
5008-5030-PFl(N).ptc 第17頁 591089 案號 91115732 Λ_η 修正 五、發明說明（12) 表4 樣品 過氡化氫 硝酸 W的研磨率 腐#率 氡4谈侵餘 1 20克 〇·3克 2,486埃/分鐘 10埃/分鐘 85埃 2 60克 〇·3克 303埃/分鐘 130埃/分鐘 684埃 3 2克 〇_3克 637埃/分鐘 4埃/分鐘 62埃 4 20克 0.005 克 1304埃/分鐘 5埃/分鐘 47埃 5 20克 〇·8克 2,765埃/分鐘 8埃/分鐘 116埃 如上所示，依據本發明的優點，在CMP製程中欲達到 一最適化的研磨率且不造成如氧化物侵蝕、腐蝕、坑洞、 盤狀凹陷等等傳統問題是可能的。另外，本發明的研磨液 組合物已改善其分散性穩定度使其可適合於長時間儲存。 任何熟習此技藝者，可輕易作些許之更動與潤飾，然 必須了解到如此之些許之更動與潤飾皆涵蓋於本發明之保 護範圍内。
5008-5030-PFl(N).ptc 第18頁 591089 _案號91115732_年月曰 修正_ 圖式簡單說明 第la圖與第lb圖係分別說明在CMP製程中，金屬層的 氧化物侵I虫與腐#之示意圖。 第2圖係說明使用本發明的研磨液組合物在鎢層研磨 過程中P D T A - F e錯化物的工作機制示意圖。 第3圖係PDTA-Fe含量與研磨率的關係之圖示說明。 第4圖係蘋果酸含量與研磨效能再現性的關係之圖示 說明
5008-5030-PFl(N).ptc 第19頁
Claims (1)
- 1 · 一種研磨液組合物，用於金屬的化學機械研磨，包 一 〇·5〜5 wt% 過氧化物； 一 0 · 0 0 1 〜5 · 0 w t % 無機酸； 一 0.001〜0.5 wt% 丙婦二胺四乙酸酯 (Propylenediaminetetraacetate，PDTA)-金屬錯化物； 一 〇· 1 〜10 wt% 羧酸； 一 〇. 1〜1 0 wt%金屬氧化物粉末；以及 一去離子水，其中該PDTA-金屬錯化物的金屬原子與氧原子之間的 鍵結能低於鎢原子與氧原子之間的鍵結能。 2 ·如申請專利範圍第1項所述之組合物，其中該過 化物是由過氧化氫、過氧化笨甲醯基、過氧化鈣、過 鎖與過氧化鈉之一或以上所組成。 d •如申請專利範圍第1項所述之組合物，其中該盔 酸是由硝m酸、鹽酸及磷酸之一或以上所組成γ、、 4·如申請專利範圍第i項所述之組合物， 金屬錯化物為PDTA- Fe、PDTA— NhtpDTA— c〇、；^日5·如申請專利範圍第1項所述之M合物，其中琴幾 酸、順乙；酸、甲酸、乳酸、海 上所組成。 ^輯、琥㈣與酒石酸之-連 氧二::::範591089 案號 91115732 曰 修正 六、申請專利範圍 物。 7.如申請專利範圍第1項所述之組合物，其中該PDTA-金屬錯化物含量為該組合物的0. 05〜0. 3wt°/〇。 1B· 5008-5030-PFl(N).ptc 第21頁
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20010047895 | 2001-08-09 | ||
| KR10-2002-0028052A KR100459101B1 (ko) | 2001-08-09 | 2002-05-21 | 금속배선용 ｃｍｐ 슬러리 조성물 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW591089B true TW591089B (en) | 2004-06-11 |
Family
ID=36096131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091115732A TW591089B (en) | 2001-08-09 | 2002-07-15 | Slurry composition for use in chemical mechanical polishing of metal wiring |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6930054B2 (zh) |
| EP (1) | EP1421610B1 (zh) |
| JP (2) | JP3987490B2 (zh) |
| CN (1) | CN1243370C (zh) |
| DE (1) | DE60215956T2 (zh) |
| IL (1) | IL160184A0 (zh) |
| TW (1) | TW591089B (zh) |
| WO (1) | WO2003015148A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400742B (zh) * | 2004-12-22 | 2013-07-01 | Nippon Steel & Sumikin Chem Co | COF substrate laminate and a method for producing the same, and a COF film carrier tape formed by laminating a COF substrate |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
| US7186653B2 (en) | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| EP1616926A1 (en) | 2004-07-15 | 2006-01-18 | Interuniversitair Microelektronica Centrum ( Imec) | Slurry composition and method for chemical polishing of copper integrated with tungsten based barrier metals |
| JP4952155B2 (ja) * | 2006-09-12 | 2012-06-13 | 富士通株式会社 | 研磨条件予測プログラム、記録媒体、研磨条件予測装置および研磨条件予測方法 |
| KR20090002506A (ko) * | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법 |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| KR102390630B1 (ko) * | 2014-03-12 | 2022-04-26 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 재료의 cmp를 위한 조성물 및 방법 |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| CN104130715B (zh) * | 2014-07-01 | 2015-09-23 | 安徽拓普森电池有限责任公司 | 一种用于半导体集成电路中金属钨的抛光液及其制备方法 |
| US11643599B2 (en) * | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
| US11111435B2 (en) | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
Family Cites Families (102)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL149551B (nl) | 1964-08-04 | 1976-05-17 | Dow Chemical Co | Werkwijze voor het reinigen en passiveren van ijzerhoudende metaaloppervlakken, waarop metallisch koper is afgezet. |
| US3597290A (en) | 1968-03-25 | 1971-08-03 | Mitsubishi Edogawa Kagaku Kk | Method for chemically dissolving metal |
| US3681022A (en) | 1970-05-01 | 1972-08-01 | Fmc Corp | Manufacture of stable hydrogen peroxide solutions |
| JPS5435125B2 (zh) | 1972-01-28 | 1979-10-31 | ||
| SE400581B (sv) | 1974-12-13 | 1978-04-03 | Nordnero Ab | Bad for kemisk polering av koppar och dess legeringar |
| JPS5177404A (zh) | 1974-12-26 | 1976-07-05 | Fuji Photo Film Co Ltd | |
| US3962005A (en) | 1975-06-30 | 1976-06-08 | Zenith Radio Corporation | Method for etching shadow mask and regenerating etchant |
| SE425007B (sv) | 1976-01-05 | 1982-08-23 | Shipley Co | Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma |
| US4144119A (en) | 1977-09-30 | 1979-03-13 | Dutkewych Oleh B | Etchant and process |
| US4140646A (en) | 1977-11-08 | 1979-02-20 | Dart Industries Inc. | Dissolution of metals with a selenium catalyzed H2 O2 -H2 SO4 etchant containing t-butyl hydroperoxide |
| US4405571A (en) | 1979-06-22 | 1983-09-20 | Mta Muszaki Fizikai Kutato Intezete | Process for selective dissolution of molybdenum in the presence of tungsten |
| US4444601A (en) | 1979-09-06 | 1984-04-24 | Richardson Chemical Company | Metal article passivated by a bath having an organic activator and a film-forming element |
| US4305779A (en) | 1980-05-28 | 1981-12-15 | The United States Of America As Represented By The United States Department Of Energy | Method of polishing nickel-base alloys and stainless steels |
| DE3237235C2 (de) | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Polieren von III-V-Halbleiteroberflächen |
| GB8701759D0 (en) | 1987-01-27 | 1987-03-04 | Laporte Industries Ltd | Processing of semi-conductor materials |
| US4956313A (en) | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
| US4956015A (en) | 1988-01-19 | 1990-09-11 | Mitsubishi Kasei Corporation | Polishing composition |
| DE3807921A1 (de) | 1988-03-10 | 1989-09-21 | Henkel Kgaa | Aktivator fuer anorganische perverbindungen |
| US5084071A (en) | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4959113C1 (en) | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5102499A (en) | 1991-01-07 | 1992-04-07 | United Technologies Corporation | Hydrogen embrittlement reduction in chemical milling |
| JP2629507B2 (ja) | 1991-01-14 | 1997-07-09 | 住友化学工業株式会社 | 過酸化水素水の精製方法 |
| US5256402A (en) | 1991-09-13 | 1993-10-26 | Colgate-Palmolive Company | Abrasive tooth whitening dentifrice of improved stability |
| IT1251431B (it) | 1991-10-25 | 1995-05-09 | Costante Fontana | Composto ad elevate caratteristiche stabilizzanti particolarmente per perossidi inorganici utilizzati in applicazioni industriali |
| US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5300813A (en) | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
| JP3149289B2 (ja) | 1993-03-24 | 2001-03-26 | 三菱製紙株式会社 | 画像形成材料及びそれを使用する画像形成方法 |
| US5575837A (en) | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
| US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5407526A (en) | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
| US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5612250A (en) | 1993-12-01 | 1997-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a catalyst |
| US5575885A (en) | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
| JP3621151B2 (ja) | 1994-06-02 | 2005-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5662769A (en) | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
| US5534462A (en) | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
| US6764613B2 (en) * | 1995-06-07 | 2004-07-20 | Mid-America Commercialization Corporation | N-alkyl ammonium acetonitrile salts, methods therefor and compositions therewith |
| US6183665B1 (en) * | 1995-06-07 | 2001-02-06 | The Clorox Company | Granular N-alkyl ammonium acetonitrile compositions |
| US5709593A (en) | 1995-10-27 | 1998-01-20 | Applied Materials, Inc. | Apparatus and method for distribution of slurry in a chemical mechanical polishing system |
| US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5948697A (en) | 1996-05-23 | 1999-09-07 | Lsi Logic Corporation | Catalytic acceleration and electrical bias control of CMP processing |
| US5993686A (en) | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US5863838A (en) | 1996-07-22 | 1999-01-26 | Motorola, Inc. | Method for chemically-mechanically polishing a metal layer |
| US5876625A (en) * | 1996-07-22 | 1999-03-02 | Carnegie Mellon University | Metal ligand containing bleaching compositions |
| JP3507628B2 (ja) | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
| US5846398A (en) | 1996-08-23 | 1998-12-08 | Sematech, Inc. | CMP slurry measurement and control technique |
| KR19980019046A (ko) | 1996-08-29 | 1998-06-05 | 고사이 아키오 | 연마용 조성물 및 이의 용도(Abrasive composition and use of the same) |
| KR19980024187A (ko) | 1996-09-03 | 1998-07-06 | 고사이 아키오 | 반도체 기판상의 금속막을 연마하기 위한 연마용 조성물 및 이의 용도 |
| US5783489A (en) | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5746606A (en) | 1996-09-30 | 1998-05-05 | Hughes Electronics | Spring loaded contact device and rotary connector |
| US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6126853A (en) | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US5916011A (en) | 1996-12-26 | 1999-06-29 | Motorola, Inc. | Process for polishing a semiconductor device substrate |
| US5916855A (en) | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US5922091A (en) | 1997-05-16 | 1999-07-13 | National Science Council Of Republic Of China | Chemical mechanical polishing slurry for metallic thin film |
| US6592776B1 (en) | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US6432828B2 (en) | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6533832B2 (en) | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
| US6551367B2 (en) | 1998-09-22 | 2003-04-22 | Cheil Industries Inc. | Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing |
| SG99289A1 (en) | 1998-10-23 | 2003-10-27 | Ibm | Chemical-mechanical planarization of metallurgy |
| KR100473442B1 (ko) * | 1998-10-23 | 2005-03-08 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 금속층의 화학적 기계적 연마를 위한 활성제, 활성제 용액, 슬러리 시스템 및 연마방법 |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| US6488730B2 (en) | 1999-07-01 | 2002-12-03 | Cheil Industries, Inc. | Polishing composition |
| KR100590665B1 (ko) | 1999-07-07 | 2006-06-19 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실란으로 개질된 연마제 입자를 함유하는 ｃｍｐ 조성물 |
| AU6379500A (en) | 1999-08-13 | 2001-03-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
| KR100310234B1 (ko) | 1999-08-20 | 2001-11-14 | 안복현 | 반도체 소자 ｃｍｐ용 금속산화물 슬러리의 제조방법 |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US6347978B1 (en) | 1999-10-22 | 2002-02-19 | Cabot Microelectronics Corporation | Composition and method for polishing rigid disks |
| KR20010046395A (ko) | 1999-11-12 | 2001-06-15 | 안복현 | 연마용 조성물 |
| US6527817B1 (en) | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| EP1111038A1 (en) * | 1999-12-22 | 2001-06-27 | The Procter & Gamble Company | Scouring composition |
| US6733553B2 (en) | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
| KR100400030B1 (ko) * | 2000-06-05 | 2003-09-29 | 삼성전자주식회사 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
| US6653242B1 (en) | 2000-06-30 | 2003-11-25 | Applied Materials, Inc. | Solution to metal re-deposition during substrate planarization |
| US6721628B1 (en) | 2000-07-28 | 2004-04-13 | United Microelectronics Corp. | Closed loop concentration control system for chemical mechanical polishing slurry |
| DE60129445T2 (de) * | 2000-08-09 | 2008-04-24 | F. Hoffmann-La Roche Ag | Quinolin-derivate als antientzündungsmittel |
| US6551935B1 (en) | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| JP2002113431A (ja) * | 2000-10-10 | 2002-04-16 | Tokyo Electron Ltd | 洗浄方法 |
| US6722950B1 (en) | 2000-11-07 | 2004-04-20 | Planar Labs Corporation | Method and apparatus for electrodialytic chemical mechanical polishing and deposition |
| KR100396883B1 (ko) | 2000-11-23 | 2003-09-02 | 삼성전자주식회사 | 화학기계적 연마용 슬러리 및 이를 이용한 구리 금속배선제조방법 |
| US6612911B2 (en) | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
| US6589100B2 (en) | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
| US6805812B2 (en) | 2001-10-11 | 2004-10-19 | Cabot Microelectronics Corporation | Phosphono compound-containing polishing composition and method of using same |
| US6705926B2 (en) | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US6527622B1 (en) | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US7097541B2 (en) | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6682575B2 (en) | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
| US6689258B1 (en) | 2002-04-30 | 2004-02-10 | Advanced Micro Devices, Inc. | Electrochemically generated reactants for chemical mechanical planarization |
| US7677956B2 (en) | 2002-05-10 | 2010-03-16 | Cabot Microelectronics Corporation | Compositions and methods for dielectric CMP |
| US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US7087187B2 (en) | 2002-06-06 | 2006-08-08 | Grumbine Steven K | Meta oxide coated carbon black for CMP |
| US6936543B2 (en) | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| US7435165B2 (en) | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
-
2002
- 2002-07-15 TW TW091115732A patent/TW591089B/zh not_active IP Right Cessation
- 2002-08-06 CN CN02815444.4A patent/CN1243370C/zh not_active Expired - Lifetime
- 2002-08-06 JP JP2003519982A patent/JP3987490B2/ja not_active Expired - Lifetime
- 2002-08-06 IL IL16018402A patent/IL160184A0/xx unknown
- 2002-08-06 DE DE60215956T patent/DE60215956T2/de not_active Expired - Lifetime
- 2002-08-06 US US10/485,500 patent/US6930054B2/en not_active Expired - Lifetime
- 2002-08-06 WO PCT/KR2002/001492 patent/WO2003015148A1/en active IP Right Grant
- 2002-08-06 EP EP02755950A patent/EP1421610B1/en not_active Expired - Lifetime
-
2007
- 2007-04-18 JP JP2007109688A patent/JP2007243209A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400742B (zh) * | 2004-12-22 | 2013-07-01 | Nippon Steel & Sumikin Chem Co | COF substrate laminate and a method for producing the same, and a COF film carrier tape formed by laminating a COF substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60215956T2 (de) | 2007-05-10 |
| DE60215956D1 (de) | 2006-12-21 |
| CN1243370C (zh) | 2006-02-22 |
| US20040244911A1 (en) | 2004-12-09 |
| US6930054B2 (en) | 2005-08-16 |
| IL160184A0 (en) | 2004-07-25 |
| WO2003015148A1 (en) | 2003-02-20 |
| JP2004538636A (ja) | 2004-12-24 |
| EP1421610B1 (en) | 2006-11-08 |
| JP3987490B2 (ja) | 2007-10-10 |
| EP1421610A1 (en) | 2004-05-26 |
| JP2007243209A (ja) | 2007-09-20 |
| EP1421610A4 (en) | 2004-12-15 |
| CN1539162A (zh) | 2004-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW591089B (en) | Slurry composition for use in chemical mechanical polishing of metal wiring | |
| KR102320653B1 (ko) | 감소된 산화물 침식을 위한 텅스텐 화학적 기계적 연마 슬러리 | |
| JP5361306B2 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
| JP2001516383A (ja) | チタニウム含有複合物を研磨するための合成物およびその方法 | |
| JP2002506915A (ja) | 銅基材に有益な化学機械的研磨スラリー | |
| JPH08510437A (ja) | 研磨用合成物および研磨方法 | |
| SG172674A1 (en) | Compositions and methods for polishing silicon nitride materials | |
| KR20100020975A (ko) | 연마용 조성물 및 반도체 집적 회로 장치의 제조 방법 | |
| KR101266537B1 (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 | |
| KR100680509B1 (ko) | 마이크로-스크래칭이 적고 금속 산화물의 기계적 연마가 잘되는 금속 ｃｍｐ 슬러리 조성물 | |
| KR101279966B1 (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 | |
| JP2001115146A (ja) | バリア膜用研磨剤 | |
| JP5813921B2 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
| JP4083342B2 (ja) | 研磨方法 | |
| KR100600598B1 (ko) | 텅스텐 배선 연마용 슬러리 조성물 | |
| KR100546788B1 (ko) | 고선택비를 나타내는 금속 배선 연마용 슬러리 조성물 | |
| JP5813922B2 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
| KR100552381B1 (ko) | 금속 ｃｍｐ 슬러리 조성물 | |
| KR20030014338A (ko) | 금속배선용 ｃｍｐ 슬러리 조성물 | |
| KR100660753B1 (ko) | 분산안정성이 향상된 텅스텐 또는 알루미늄 배선용 cmp 전구체 조성물 및 슬러리 조성물 | |
| KR100725552B1 (ko) | 텅스텐 ｃｍｐ 슬러리 조성물 | |
| KR100552380B1 (ko) | 금속배선용 ｃｍｐ 슬러리 조성물 | |
| KR101178718B1 (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 | |
| KR20100073668A (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 | |
| KR20100075174A (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |