KR20030014338A - 금속배선용 cmp 슬러리 조성물 - Google Patents
금속배선용 cmp 슬러리 조성물 Download PDFInfo
- Publication number
- KR20030014338A KR20030014338A KR1020020028052A KR20020028052A KR20030014338A KR 20030014338 A KR20030014338 A KR 20030014338A KR 1020020028052 A KR1020020028052 A KR 1020020028052A KR 20020028052 A KR20020028052 A KR 20020028052A KR 20030014338 A KR20030014338 A KR 20030014338A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- pdta
- slurry composition
- peroxide
- polishing
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 239000000203 mixture Substances 0.000 title claims abstract description 31
- 238000005498 polishing Methods 0.000 title abstract description 68
- 239000000126 substance Substances 0.000 title abstract description 7
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 15
- 150000002978 peroxides Chemical class 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000004429 atom Chemical group 0.000 claims abstract 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 8
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 7
- 239000001630 malic acid Substances 0.000 claims description 7
- 235000011090 malic acid Nutrition 0.000 claims description 7
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910001111 Fine metal Inorganic materials 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 3
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004343 Calcium peroxide Substances 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 claims description 2
- 235000019402 calcium peroxide Nutrition 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- 150000007524 organic acids Chemical class 0.000 claims 1
- 239000001384 succinic acid Substances 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 abstract description 15
- 239000002253 acid Substances 0.000 abstract description 5
- MJOQJPYNENPSSS-XQHKEYJVSA-N [(3r,4s,5r,6s)-4,5,6-triacetyloxyoxan-3-yl] acetate Chemical compound CC(=O)O[C@@H]1CO[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O MJOQJPYNENPSSS-XQHKEYJVSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 abstract 1
- 230000008569 process Effects 0.000 description 20
- 239000010410 layer Substances 0.000 description 16
- 239000007800 oxidant agent Substances 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 230000001590 oxidative effect Effects 0.000 description 13
- 230000003628 erosive effect Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000007792 addition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- -1 malic acid carboxylic acids Chemical class 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- QWARLPGIFZKIQW-UHFFFAOYSA-N hydrogen peroxide;nitric acid Chemical compound OO.O[N+]([O-])=O QWARLPGIFZKIQW-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/14—Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
슬러리 | PDTA-Fe | W 연마속도 | P-TEOS 연마속도 |
Ⅰ | 0.0g | 863Å/min | 48Å/min |
Ⅱ | 0.02g | 1,006Å/min | 53Å/min |
Ⅲ | 4.0g | 2,445Å/min | 87Å/min |
Ⅳ | 10.0g | 2,718Å/min | 105Å/min |
시료 | PDTA-Fe | Fe(NO3)3 | KIO3 | W 연마속도 | 산화물 에로젼 | 코로젼 속도 |
1 | 4.0g | 0.0g | 0.0g | 2,486Å/min | 85Å | 10Å/min |
2 | 0.0g | 15.0g | 0.0g | 2,445Å/min | 460Å | 120Å/min |
3 | 0.0g | 0.0g | 20.0g | 2,718Å/min | 328Å | 150Å/min |
시료 | PDTA-Fe | 경과일 | W 연마속도 | 평균입자크기 |
1 | 0.0g | 0일 | 863Å/min | 185nm |
2 | 4.0g | 0일 | 2,445Å/min | 185nm |
3 | 0.0g | 30일 | 425Å/min | 210nm |
4 | 4.0g | 30일 | 2,375Å/min | 186nm |
5 | 0.0g | 60일 | 388Å/min | 248nm |
6 | 4.0g | 60일 | 2,485Å/min | 188nm |
7 | 0.0g | 120일 | 376Å/min | 447nm |
8 | 4.0g | 120일 | 2,418Å/min | 188nm |
시료 | 과산화수소 | 질산 | W 연마속도 | 코로젼 속도 | 산화물 에로젼 |
1 | 20g | 0.3g | 2,486Å/min | 10Å/min | 85Å |
2 | 60g | 0.3g | 3,253Å/min | 130Å/min | 684Å |
3 | 2g | 0.3g | 637Å/min | 4Å/min | 62Å |
4 | 20g | 0.005g | 1,204Å/min | 5Å/min | 47Å |
5 | 20g | 0.8g | 2,765Å/min | 8Å/min | 116Å |
Claims (8)
- 과산화물, 무기산, 금속원자와 산소원자 간의 결합에너지가 O-W의 결합에너지보다 작은 프로필렌다이아민테트라아세테이트(PDTA)-금속 착물, 카르복시산, 금속산화물 미분말, 및 탈이온수를 포함하는 금속배선용 CMP 슬러리 조성물.
- 제 1항에 있어서,상기 과산화물 0.5~5wt%;상기 무기산 0.001~5.0wt%;상기 PDTA-금속 착물 0.001wt%~0.5wt%;상기 카르복시산 0.1~10wt%; 및상기 금속산화물 미분말 0.1wt%∼10wt%를 포함하고, 나머지가 탈이온수인 것을 특징으로 하는 슬러리 조성물.
- 제 1항에 있어서, 상기 과산화물이 과산화수소(hydrogen peroxide), 과산화벤조일(benzoyl peroxide), 과산화칼슘(calcium peroxide), 과산화바륨(barium peroxide) 및 과산화나트륨(sodium peroxide)으로 구성되는 그룹으로부터 선택되는 1종 이상인 것을 특징으로 하는 슬러리 조성물.
- 제 1항에 있어서, 상기 무기산이 질산(nitric acid), 황산(sulfuric acid),염산(hydrochloric acid) 및 인산(phosphoric acid)으로 구성되는 그룹으로부터 선택되는 1종 이상인 것을 특징으로 하는 슬러리 조성물.
- 제 1항에 있어서, 상기 PDTA-금속 착물이 PDTA-Fe, PDTA-Ni 또는 PDTA-Co인 것을 특징으로 하는 슬러리 조성물.
- 제 1항에 있어서, 상기 카르복시산이 적어도 하나 이상의 카르복시기를 갖는 유기산으로, 아세트산(acetic acid), 시트르산(citric acid), 글루타르산(glutaric acid), 글리콜산(glycolic acid), 포름산(formic acid), 젖산(lactic acid), 말산(malic acid), 말레산(maleic acid), 옥살산(oxalic acid), 프탈산(phthalic acid), 숙신산(succinic acid) 및 타르타르산(tartaric acid)으로 구성된 군에서 선택되는 1종 이상인 것을 특징으로 하는 슬러리 조성물.
- 제 1항에 있어서, 상기 금속산화물 미분말이 실리카, 알루미나, 세리아, 티타니아, 또는 이들의 혼합물인 것을 특징으로 하는 슬러리 조성물.
- 제 2항에 있어서, 상기 PDTA-금속 착물의 함량이 0.05~0.3wt%인 것을 특징으로 하는 슬러리 조성물.
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW091115732A TW591089B (en) | 2001-08-09 | 2002-07-15 | Slurry composition for use in chemical mechanical polishing of metal wiring |
JP2003519982A JP3987490B2 (ja) | 2001-08-09 | 2002-08-06 | 金属配線用cmpスラリー組成物 |
EP02755950A EP1421610B1 (en) | 2001-08-09 | 2002-08-06 | Slurry composition for use in chemical mechanical polishing of metal wiring |
PCT/KR2002/001492 WO2003015148A1 (en) | 2001-08-09 | 2002-08-06 | Slurry composition for use in chemical mechanical polishing of metal wiring |
DE60215956T DE60215956T2 (de) | 2001-08-09 | 2002-08-06 | Schlämmzusammensetzung zur verwendung beim chemisch-mechanischen polieren von metallverdrahtung |
IL16018402A IL160184A0 (en) | 2001-08-09 | 2002-08-06 | Slurry composition for use in chemical mechanical polishing of metal wiring |
CN02815444.4A CN1243370C (zh) | 2001-08-09 | 2002-08-06 | 用于金属布线的化学机械抛光的浆液组合物 |
US10/485,500 US6930054B2 (en) | 2001-08-09 | 2002-08-06 | Slurry composition for use in chemical mechanical polishing of metal wiring |
IL160184A IL160184A (en) | 2001-08-09 | 2004-02-02 | Dilute mixture compound for use in chemical mechanical polishing of metal wire |
US10/959,228 US6953389B2 (en) | 2001-08-09 | 2004-10-06 | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
US11/148,670 US7452815B2 (en) | 2001-08-09 | 2005-06-09 | Methods of forming integrated circuit devices having polished tungsten metal layers therein |
JP2007109688A JP2007243209A (ja) | 2001-08-09 | 2007-04-18 | 金属配線用cmpスラリー組成物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010047895 | 2001-08-09 | ||
KR20010047895 | 2001-08-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030014338A true KR20030014338A (ko) | 2003-02-17 |
KR100459101B1 KR100459101B1 (ko) | 2004-12-03 |
Family
ID=27718453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0028052A KR100459101B1 (ko) | 2001-08-09 | 2002-05-21 | 금속배선용 cmp 슬러리 조성물 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100459101B1 (ko) |
IL (1) | IL160184A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516887B1 (ko) * | 2002-12-10 | 2005-09-23 | 제일모직주식회사 | 금속배선층 연마용 cmp 슬러리 조성물 |
KR100680509B1 (ko) * | 2004-10-06 | 2007-02-08 | 제일모직주식회사 | 마이크로-스크래칭이 적고 금속 산화물의 기계적 연마가 잘되는 금속 cmp 슬러리 조성물 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101279970B1 (ko) | 2008-12-31 | 2013-07-05 | 제일모직주식회사 | 금속 배선 연마용 cmp 슬러리 조성물 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JP4090589B2 (ja) * | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
KR100400030B1 (ko) * | 2000-06-05 | 2003-09-29 | 삼성전자주식회사 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
-
2002
- 2002-05-21 KR KR10-2002-0028052A patent/KR100459101B1/ko active IP Right Grant
-
2004
- 2004-02-02 IL IL160184A patent/IL160184A/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516887B1 (ko) * | 2002-12-10 | 2005-09-23 | 제일모직주식회사 | 금속배선층 연마용 cmp 슬러리 조성물 |
KR100680509B1 (ko) * | 2004-10-06 | 2007-02-08 | 제일모직주식회사 | 마이크로-스크래칭이 적고 금속 산화물의 기계적 연마가 잘되는 금속 cmp 슬러리 조성물 |
Also Published As
Publication number | Publication date |
---|---|
KR100459101B1 (ko) | 2004-12-03 |
IL160184A (en) | 2008-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100745447B1 (ko) | 금속의화학기계적연마에유용한조성물및슬러리 | |
JP2007243209A (ja) | 金属配線用cmpスラリー組成物 | |
EP1696011B1 (en) | Chemical mechanical polishing method | |
US7754098B2 (en) | Chemical-mechanical polishing composition and method for using the same | |
KR20110095838A (ko) | 금속의 화학 기계적 연마에 유용한 조성물 및 슬러리 | |
JP2012004588A (ja) | 銅基材に有益な化学機械的研磨スラリー | |
TW201309787A (zh) | 一種鎢研磨用cmp漿料組合物 | |
KR101266537B1 (ko) | 금속 배선 연마용 cmp 슬러리 조성물 | |
KR100459101B1 (ko) | 금속배선용 cmp 슬러리 조성물 | |
KR20100077814A (ko) | 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 | |
KR100725550B1 (ko) | 구리 배선 연마용 슬러리 조성물 및 이를 이용한 금속배선 연마 방법 | |
KR100600598B1 (ko) | 텅스텐 배선 연마용 슬러리 조성물 | |
KR100552381B1 (ko) | 금속 cmp 슬러리 조성물 | |
KR100725552B1 (ko) | 텅스텐 cmp 슬러리 조성물 | |
KR100552380B1 (ko) | 금속배선용 cmp 슬러리 조성물 | |
KR100546788B1 (ko) | 고선택비를 나타내는 금속 배선 연마용 슬러리 조성물 | |
KR100565424B1 (ko) | 분산안정성을 개선한 금속배선 연마용 cmp 슬러리 | |
KR101279970B1 (ko) | 금속 배선 연마용 cmp 슬러리 조성물 | |
KR100699185B1 (ko) | 금속배선 연마용 cmp 슬러리 | |
KR100565426B1 (ko) | 텅스텐 배선 연마용 cmp 슬러리 | |
KR100660753B1 (ko) | 분산안정성이 향상된 텅스텐 또는 알루미늄 배선용 cmp 전구체 조성물 및 슬러리 조성물 | |
KR101279963B1 (ko) | 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121031 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20131031 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20141031 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20151030 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20181031 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20191031 Year of fee payment: 16 |