KR100516887B1 - 금속배선층 연마용 cmp 슬러리 조성물 - Google Patents
금속배선층 연마용 cmp 슬러리 조성물 Download PDFInfo
- Publication number
- KR100516887B1 KR100516887B1 KR10-2002-0078421A KR20020078421A KR100516887B1 KR 100516887 B1 KR100516887 B1 KR 100516887B1 KR 20020078421 A KR20020078421 A KR 20020078421A KR 100516887 B1 KR100516887 B1 KR 100516887B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- slurry composition
- metal
- cmp slurry
- oxidant
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 239000002002 slurry Substances 0.000 title claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 title claims abstract description 27
- 239000000203 mixture Substances 0.000 title claims abstract description 25
- 239000000126 substance Substances 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007800 oxidant agent Substances 0.000 claims abstract description 20
- 230000001590 oxidative effect Effects 0.000 claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 7
- 239000011164 primary particle Substances 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011163 secondary particle Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004343 Calcium peroxide Substances 0.000 claims description 2
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 claims description 2
- 235000019402 calcium peroxide Nutrition 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 238000005054 agglomeration Methods 0.000 claims 1
- 230000002776 aggregation Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- LMSDCGXQALIMLM-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;iron Chemical compound [Fe].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LMSDCGXQALIMLM-UHFFFAOYSA-N 0.000 description 1
- ANWREMMWTONMSH-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid manganese Chemical compound C(C(C)N(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O.[Mn] ANWREMMWTONMSH-UHFFFAOYSA-N 0.000 description 1
- UGCGKZYEELIHCG-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid;iron Chemical compound [Fe].OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O UGCGKZYEELIHCG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
- 탈이온수에 분산된 연마제, 제 1 산화제, 제 2 산화제, 금속-킬레이트 착물, 및 pH 조절제를 포함하는 금속배선층 연마용 CMP 슬러리 조성물로서, 상기 연마제가 1차 입자의 비표면적이 130㎡/g 내지 300㎡/g인 발연 알루미나 또는 세리아 미분말이고, 상기 연마제가 슬러리 내에서 응집하여 형성된 2차 입자의 크기 분포도에서, 최대높이의 1/2 지점에서의 폭이 최대폭의 0.733배 내지 1.0배인 것을 특징으로 하는 CMP 슬러리 조성물.
- 삭제
- 제 1항에 있어서, 상기 제 1 산화제가 과산화수소(hydrogen peroxide), 과산화벤조일(benzoyl peroxide), 과산화칼슘(calcium peroxide), 과산화바륨(barium peroxide) 및 과산화나트륨(sodium peroxide)으로 구성된 군에서 선택되는 1종인 것을 특징으로 하는 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 제 2 산화제가 질산 및 황산으로 구성된 군에서 선택되는 1종인 것을 특징으로 하는 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 금속-킬레이트 착물이 PDTA-Fe, PDTA-Mn 및 EDTA-Fe로 구성된 군에서 선택되는 1종인 것을 특징으로 하는 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 금속배선층이 텅스텐으로 이루어져 있고, 상기 조성물의 pH가 1.5 내지 3.0으로 조정된 것을 특징으로 하는 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 금속배선층이 알루미늄으로 이루어져 있고, 상기 조성물의 pH가 4 내지 10으로 조정된 것을 특징으로 하는 CMP 슬러리 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0078421A KR100516887B1 (ko) | 2002-12-10 | 2002-12-10 | 금속배선층 연마용 cmp 슬러리 조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0078421A KR100516887B1 (ko) | 2002-12-10 | 2002-12-10 | 금속배선층 연마용 cmp 슬러리 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040050565A KR20040050565A (ko) | 2004-06-16 |
KR100516887B1 true KR100516887B1 (ko) | 2005-09-23 |
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KR10-2002-0078421A KR100516887B1 (ko) | 2002-12-10 | 2002-12-10 | 금속배선층 연마용 cmp 슬러리 조성물 |
Country Status (1)
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JP2000124216A (ja) * | 1998-10-13 | 2000-04-28 | Nec Corp | 半導体装置の製造方法 |
US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
KR20010080302A (ko) * | 1998-10-23 | 2001-08-22 | 스티븐티.워쇼 | 활성액을 함유하는 화학적 기계적 연마 슬러리 시스템 |
KR20010109960A (ko) * | 2000-06-05 | 2001-12-12 | 윤종용 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
US6468913B1 (en) * | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
KR20030014338A (ko) * | 2001-08-09 | 2003-02-17 | 제일모직주식회사 | 금속배선용 cmp 슬러리 조성물 |
-
2002
- 2002-12-10 KR KR10-2002-0078421A patent/KR100516887B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JP2000124216A (ja) * | 1998-10-13 | 2000-04-28 | Nec Corp | 半導体装置の製造方法 |
KR20010080302A (ko) * | 1998-10-23 | 2001-08-22 | 스티븐티.워쇼 | 활성액을 함유하는 화학적 기계적 연마 슬러리 시스템 |
US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
KR20010109960A (ko) * | 2000-06-05 | 2001-12-12 | 윤종용 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
US6468913B1 (en) * | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
KR20030014338A (ko) * | 2001-08-09 | 2003-02-17 | 제일모직주식회사 | 금속배선용 cmp 슬러리 조성물 |
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Publication number | Publication date |
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KR20040050565A (ko) | 2004-06-16 |
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