KR100504606B1 - 연마속도와 분산안정성이 향상된 알루미늄 배선 연마용슬러리조성물 - Google Patents
연마속도와 분산안정성이 향상된 알루미늄 배선 연마용슬러리조성물 Download PDFInfo
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- KR100504606B1 KR100504606B1 KR10-2002-0085247A KR20020085247A KR100504606B1 KR 100504606 B1 KR100504606 B1 KR 100504606B1 KR 20020085247 A KR20020085247 A KR 20020085247A KR 100504606 B1 KR100504606 B1 KR 100504606B1
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- Prior art keywords
- polishing
- slurry
- slurry composition
- present
- peroxide
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 90
- 239000002002 slurry Substances 0.000 title claims abstract description 59
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000000203 mixture Substances 0.000 title claims abstract description 11
- 239000000126 substance Substances 0.000 title description 4
- 239000004411 aluminium Substances 0.000 title 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 150000004697 chelate complex Chemical class 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 4
- 239000012498 ultrapure water Substances 0.000 claims abstract description 4
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 7
- LMSDCGXQALIMLM-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;iron Chemical compound [Fe].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LMSDCGXQALIMLM-UHFFFAOYSA-N 0.000 claims description 2
- UGCGKZYEELIHCG-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid;iron Chemical compound [Fe].OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O UGCGKZYEELIHCG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- PKORBOCCIRQQBW-UHFFFAOYSA-N C(C(C)N(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O.[Mg] Chemical compound C(C(C)N(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O.[Mg] PKORBOCCIRQQBW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004343 Calcium peroxide Substances 0.000 claims description 2
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 claims description 2
- 235000019402 calcium peroxide Nutrition 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 16
- 150000002334 glycols Chemical class 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 4
- 239000006061 abrasive grain Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000010410 layer Substances 0.000 description 27
- 239000002245 particle Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 229910001111 Fine metal Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 150000002978 peroxides Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000013522 chelant Substances 0.000 description 3
- 230000009920 chelation Effects 0.000 description 3
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011369 resultant mixture Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
# | MEG | Al 연마속도 |
비교예 1 | 0.0g | 1,674Å/min |
실시예 1-1 | 10.0g | 2,631Å/min |
실시예 1-2 | 30.0g | 2,785Å/min |
실시예 1-3 | 60.0g | 2,342Å/min |
# | DEG | Al 연마속도 |
비교예 2 | 0.0g | 1,674Å/min |
실시예 2-1 | 10.0g | 2,861Å/min |
실시예 2-2 | 30.0g | 2,890Å/min |
실시예 2-3 | 60.0g | 2,307Å/min |
# | 방치 일수 | Al 연마속도 | 평균 입자크기 |
실시예 3-1 | 0일 | 2,861Å/min | 267㎚ |
실시예 3-2 | 30일 | 2,842Å/min | 260㎚ |
실시예 3-3 | 60일 | 2,732Å/min | 255㎚ |
실시예 3-4 | 90일 | 2,703Å/min | 284㎚ |
실시예 3-5 | 180일 | 2,455Å/min | 288㎚ |
# | 방치 일수 | Al 연마속도 | 평균 입자크기 |
비교예 3-1 | 0일 | 1,674Å/min | 273㎚ |
비교예 3-2 | 30일 | 1,001Å/min | 363㎚ |
비교예 3-3 | 60일 | 937Å/min | 1,084㎚ |
비교예 3-4 | 90일 | 888Å/min | 3,665㎚ |
비교예 3-5 | 180일 | - | - |
Claims (5)
- 다음의 성분들을 포함하는 알루미늄 배선 연마용 슬러리 조성물:(a) 알루미나, 세리아 및 지르코니아로 구성된 군에서 선택되는 1종 이상의 금속산화물 미분말 0.5~10중량%;(b) 산화제 1~5중량%;(c) 킬레이트 착물 0.001~1중량%;(d) 글리콜 0.001~3중량%;(e) 슬러리 조성물의 최종 pH가 4~10이 되도록 하는 양의 pH 조절제; 및(f) 잔량으로서 초순수.
- 삭제
- 제 1항에 있어서, 상기 산화제가 과산화수소, 과산화벤조일, 과산화칼슘, 과산화바륨 및 과산화나트륨으로 구성된 군에서 선택되는 1종 이상인 것을 특징으로 하는 알루미늄 배선 연마용 슬러리 조성물.
- 제 1항에 있어서, 상기 킬레이트 착물이 철-프로필렌다이아민테트라아세트산(PDTA-Fe), 철-에틸렌다이아민테트라아세트산(EDTA-Fe) 및 마그네슘-프로필렌다이아민테트라아세트산(PDTA-Mg)으로 구성된 군에서 선택되는 1종인 것을 특징으로 하는 알루미늄 배선 연마용 슬러리 조성물.
- 제 1항에 있어서, 상기 글리콜이 모노에틸렌글리콜 및 다이에틸렌글리콜로 구성된 군에서 선택되는 1종 이상인 것을 특징으로 하는 알루미늄 배선 연마용 슬러리 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0085247A KR100504606B1 (ko) | 2002-12-27 | 2002-12-27 | 연마속도와 분산안정성이 향상된 알루미늄 배선 연마용슬러리조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0085247A KR100504606B1 (ko) | 2002-12-27 | 2002-12-27 | 연마속도와 분산안정성이 향상된 알루미늄 배선 연마용슬러리조성물 |
Publications (2)
Publication Number | Publication Date |
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KR20040059573A KR20040059573A (ko) | 2004-07-06 |
KR100504606B1 true KR100504606B1 (ko) | 2005-08-03 |
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KR10-2002-0085247A KR100504606B1 (ko) | 2002-12-27 | 2002-12-27 | 연마속도와 분산안정성이 향상된 알루미늄 배선 연마용슬러리조성물 |
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KR (1) | KR100504606B1 (ko) |
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KR100871554B1 (ko) * | 2007-06-26 | 2008-12-01 | 주식회사 동부하이텍 | 텅스텐 씨엠피 방법 및 슬러리 |
CN102832114B (zh) * | 2012-09-11 | 2015-05-13 | 中国科学院微电子研究所 | 铝金属栅化学机械研磨去除率的确定方法和系统 |
CN104745084B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种用于铝的化学机械抛光液及使用方法 |
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