TW588452B - Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device - Google Patents

Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device Download PDF

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Publication number
TW588452B
TW588452B TW092113308A TW92113308A TW588452B TW 588452 B TW588452 B TW 588452B TW 092113308 A TW092113308 A TW 092113308A TW 92113308 A TW92113308 A TW 92113308A TW 588452 B TW588452 B TW 588452B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
electrode
ferroelectric capacitor
capacitor
metal
Prior art date
Application number
TW092113308A
Other languages
English (en)
Chinese (zh)
Other versions
TW200307364A (en
Inventor
Takashi Hase
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW200307364A publication Critical patent/TW200307364A/zh
Application granted granted Critical
Publication of TW588452B publication Critical patent/TW588452B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW092113308A 2002-05-17 2003-05-16 Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device TW588452B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002142534A JP2003332539A (ja) 2002-05-17 2002-05-17 強誘電体キャパシタ及びその製造方法並びに半導体記憶装置

Publications (2)

Publication Number Publication Date
TW200307364A TW200307364A (en) 2003-12-01
TW588452B true TW588452B (en) 2004-05-21

Family

ID=29267829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092113308A TW588452B (en) 2002-05-17 2003-05-16 Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device

Country Status (6)

Country Link
US (2) US6872995B2 (de)
EP (1) EP1363317A2 (de)
JP (1) JP2003332539A (de)
KR (1) KR100560024B1 (de)
CN (1) CN1249814C (de)
TW (1) TW588452B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002196B2 (en) * 2003-11-13 2006-02-21 Infineon Technologies Ag Ferroelectric capacitor devices and FeRAM devices
JP5266609B2 (ja) * 2005-03-28 2013-08-21 富士ゼロックス株式会社 圧電素子、液滴吐出ヘッド、液滴吐出装置
JP4791191B2 (ja) * 2006-01-24 2011-10-12 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4613857B2 (ja) * 2006-03-14 2011-01-19 セイコーエプソン株式会社 強誘電体メモリ装置、強誘電体メモリ装置の製造方法
JP2007266429A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 半導体装置及びその製造方法
US8298909B2 (en) 2006-12-27 2012-10-30 Hynix Semiconductor Inc. Semiconductor device and method for fabricating the same
WO2008114423A1 (ja) * 2007-03-20 2008-09-25 Fujitsu Microelectronics Limited 半導体装置およびその製造方法
KR100869343B1 (ko) * 2007-08-31 2008-11-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US9159551B2 (en) * 2009-07-02 2015-10-13 Micron Technology, Inc. Methods of forming capacitors
KR101006706B1 (ko) * 2009-10-13 2011-01-10 주식회사 머리디언 칠판용 지우개의 걸레장착수단
KR20110072921A (ko) * 2009-12-23 2011-06-29 삼성전자주식회사 메모리소자 및 그 동작방법
US10614868B2 (en) * 2018-04-16 2020-04-07 Samsung Electronics Co., Ltd. Memory device with strong polarization coupling

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421007A1 (de) * 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP3929513B2 (ja) * 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
JPH09102591A (ja) * 1995-07-28 1997-04-15 Toshiba Corp 半導体装置及びその製造方法
JP3587004B2 (ja) * 1996-11-05 2004-11-10 ソニー株式会社 半導体メモリセルのキャパシタ構造及びその作製方法
JP2000114245A (ja) * 1998-10-05 2000-04-21 Hitachi Ltd 半導体集積回路装置およびその製造方法
EP1145293A1 (de) * 1998-11-30 2001-10-17 Interuniversitair Micro-Elektronica Centrum Verfahren zur herstellung eines ferroelektrischen kondensators und verfahren zur bildung einer pzt-schicht auf einem substrat
JP3665570B2 (ja) * 1998-12-23 2005-06-29 インフィネオン テクノロジース アクチエンゲゼルシャフト コンデンサ電極装置
KR100978614B1 (ko) 2008-05-14 2010-08-27 (주) 아모엘이디 엘이디 패키지 및 그의 제조방법

Also Published As

Publication number Publication date
KR100560024B1 (ko) 2006-03-15
CN1461055A (zh) 2003-12-10
KR20030089647A (ko) 2003-11-22
CN1249814C (zh) 2006-04-05
US20050170534A1 (en) 2005-08-04
TW200307364A (en) 2003-12-01
JP2003332539A (ja) 2003-11-21
US20030213985A1 (en) 2003-11-20
US6872995B2 (en) 2005-03-29
US7271054B2 (en) 2007-09-18
EP1363317A2 (de) 2003-11-19

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