TW488011B - Iridium composite barrier structure and method for same - Google Patents

Description

488011 ____________ ------- -----------------------5. Description of the invention (1) ~-One by one, the present invention relates generally to integrated circuits (ICS ) Manufacture of platinum: (1 = ί Other responsible metals are used in integrated circuit iron belts I · Thunder) for making silver (Ir), group (Ta) and oxygen-conducting electrode V 璧 of the composite film of oxygen In the container, the use of shell metal t is due to its unique chemical resistance. This property is especially required for the annealing conditions in the south temperature rolling, such as in the manufacture of ferroelectric electricity. Dagger: This: Ignore precious metals and Ferroelectric materials :: chemical interactions between perovskite metal oxides. 埯 趱 has said in detail that the aforementioned noble metal is used as a discrete electrode pair by ferroelectric materials. One or two of these electrodes are often It is connected to the conductive track of the transistor and the electrical connection to the integrated circuit. As is well known, the two sides, or the device can be polarized according to the voltage applied to the electrode, and the relationship between the Y and other weaves It is expressed in the hysteresis loop. The ferroelectric device used in the memory ^ = and the polarized polarization of the electric hair can be used to indicate " 1 " Devices are often referred to as ferro-RAM or FRAM. Ferroelectric devices are common, and every degree is hate, that is, even if the power circuit is removed from the integrated circuit that embeds the ferroelectric device. The device remains polarized. There is a problem with outfitting and using metal, even if it is a responsible metal. Pt may be said to be a precious metal used to diffuse oxygen, especially at high temperatures. The diffusion of the most widespread oxygen in Pt causes adjacent barriers and substrates. Oxidation occurs. It is generally read that the Q material is silicon or silicon dioxide. Oxidation makes the platinum and the adjacent ^ adjacent groups have poor adhesion. Oxidation also interferes with the conductivity between adjacent substrate layers. Materials are particularly susceptible to problems caused by oxygen diffusion. Finally, silicon 3 has less iron 488011

V. Description of the invention (2) Ferroelectric device with poor β-memory. Or the temperature of the integrated circuit annealing process is limited to prevent the ferroelectric device from degrading. : Again

Various strategies have been tried to improve the interlayer diffusion, adhesion, and conductivity problems caused by the use of metal as a conductive film in the fabrication of integrated circuits. Titanium (Π), titanium dioxide (τ102), and titanium nitride (TiN) layers are sandwiched between the noble metal and the silicon (S 1) substrate to suppress interlayer diffusion of oxygen. However, the Ti layer is usually only effective at annealing temperatures below 600 degrees Celsius. After annealing at 600 degrees, platinum diffuses through the titanium layer and reacts with silicon to form silicide. In addition, this platinum cannot stop oxygen diffusion. After annealing at high temperature, a thin layer of silicon dioxide can be formed on the silicon surface to isolate the formation of the chain metal film between the silicon and the electrode. Both of these issues are related to platinum and adjacent thermal expansion and stress. Overlay is known to suppress hillock formation. Other problems are peeling off and the hillock-shaped integrated circuit layer during the south temperature annealing. The titanium layer of the platinum film can reduce the application of the platinum film. Iridium has been used to try to solve the interlayer diffusion problem of oxygen. Iridium is weatherable 'and has a high melting point. Compared with platinum, 'iridium is more resistant to tritium; In addition, even after oxidation, silver oxide remains conductive for ten years. Adjacent to titanium ’the interlayer diffusion of this iridium / titanium barrier to oxygen

Permeability a However, silver can diffuse through titanium. Like chains, iridium disks are extremely reactive ... b 'double iridium titanium barrier or non-ideal barrier metal. Conghua Bin Barrier Guard applied for the pending application on the 5th, pole / barrier structure and method,

Invented by Zhang et al. 1Q99 3 case number 0 9/2 6 3, 5 9 5 π silver conductive electricity

488011: V. Description of the invention (3) I shows a multilayer iridium / button film which can resist interlayer diffusion. | Better is to develop alternative methods to use iridium as a conductor, conductive barrier, or electrode in integrated circuit manufacturing. It is preferred to use iridium without interacting with the underlying silicon substrate. The preferred iridium film can be modified to improve interlayer diffusion properties. In addition, a better iridium film of this type is laminated with an interlayer film to prevent the iridium from colliding with the silicon substrate.

I interaction. Preferably, the multilayer film including an iridium layer is resistant to interlayer diffusion of oxygen at high annealing temperatures. Another preferable condition is that the multilayer film including iridium does not cause peeling problems and hillock formation. It is preferred to produce a modified iridium film that remains conductive after annealing under high temperature and oxygen environmental conditions. Therefore, a high-temperature stable conductive barrier used in integrated circuits is proposed: a wall layer. The barrier system includes a bottom silicon substrate, a first barrier film, a group (Ta) covering the substrate, and a silver-group-oxygen (Ir-Ta-0) composite film—covering the first barrier film. . The Ir-Ta-O composite film remained conductive even after being subjected to a high-temperature annealing process in an oxygen environment. In addition, the iridium composite film resists the formation of hillocks and resists peeling. In some aspects of the invention, a second barrier film, including a precious metal, covers the iridium-tantalum-oxygen composite film. The second barrier film improves the interface of the iridium-tantalum-oxygen with respect to the subsequent deposited layer, and limits the diffusion of oxygen into the iridium-tantalum-oxygen film. The first barrier film is generally selected from materials of tantalum, tantalum silicon nitride (TaSiN), and tantalum nitride (TaN). The first barrier layer has a thickness in a range of about 10 to 100 nanometers (nm). In some aspects of the present invention, the barrier is used in a ferroelectric device.

Page 7 488011 丨 V. Description of the invention (4) | Thereafter, the iridium-tantalum-oxygen film is covered with a ferroelectric film. Or the second barrier layer I I is sandwiched between the iridium-tantalum-oxygen film and the ferroelectric film. A conductive metal film made of a noble metal, the aforementioned silver composite film, or other multilayer conductive top layer electrodes cover the ferroelectric film. The ferroelectric film can store charges between the top layer and the iridium-group-oxygen electrode. I In detail, the iridium composite film system includes the following materials. Or iridium, button, and! Oxygen, or iridium, tantalum, and Ir02, or iridium, tantalum, and Ta2 05 or Ir02 and T a2 05, or Ir 02, T a2 05, silver and group, or table and T a2 05 or group and Ir 02, or Ir02, Ta2 05 and iridium, or Ir02, Ta2 05 and tantalum. In addition, the aforementioned iridium composite film system includes τ-phase variants of Ta205 and (Ta, 0). The iridium-tantalum-oxygen composite film generally has a thickness in the range of about 10 to 500 nanometers. Also proposed is a method for covering a high-temperature stable conductive barrier: layer of a circuit substrate, the method comprising the steps of: a) depositing a first barrier layer covering the substrate, including tantalum; and b) depositing the first barrier layer A barrier layer of iridium-tantalum-oxygen composite film to form a multilayer structure that can resist its interaction with the substrate. The silver-group-rhenium composite film and the first barrier layer are deposited by a deposition method and are selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal organic chemical vapor deposition (MOCVD). In some aspects of the present invention, step b) includes co-sputtering an iridium and tantalum target at a power in the range of about 200 to 400 watts. The power sputtering on the tantalum target is greater than Or equal to the power of sputtering on the iridium target, and the ratio of argon to oxygen is about 1: X, where X is greater than or equal to 1. 1 Some aspects of the present invention include another step after step b):

Page 8488011 V. Description of the invention (5) | C) Deposition of a second barrier layer covering the iridium-button-oxygen composite film, including metal I, so that the second barrier layer can resist oxygen diffusion to the iridium In the button-oxygen film, the interface of the iridium-tantalum-oxygen film with respect to the subsequent deposited material is improved. The second barrier film is selected from iridium, ruthenium, Ir 02, platinum (Pt), and Ru 02, and has a thickness in a range of about 10 to 200 nm. Step c) includes depositing the second barrier layer by a deposition method, selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal organic chemical vapor deposition (MOCVD). When a ferroelectric capacitor is to be formed, after step c), it further includes: d) depositing a ferroelectric material covering one of the iridium-tantalum-oxygen composite layer; and e) depositing a conductive top layer covering the ferroelectric material Electrode to form a ferroelectric capacitor.-. Brief description of the drawing :: Figures 1-3 illustrate the steps of a completely high temperature stable conductive barrier layer used in an integrated circuit. FIG. 4 illustrates the sheet resistance properties of the iridium composite film of the present invention. FIG. 5 illustrates the X-ray diffraction (XRD) spectrum of the iridium composite film of the present invention at various annealing temperatures below 650 ° C for 5 minutes in an oxygen environment. FIG. 6 illustrates an X-ray diffraction (XRD) spectrum of the iridium composite film of the present invention in various oxygen atmospheres at various annealing temperatures higher than 650 ° C for 5 minutes. FIG. 7 is a cross-sectional view of an iridium-tantalum-oxygen film covering a silicon substrate of the present invention. Fig. 8 is a flowchart illustrating the steps of a method for forming a high-temperature stable conductive barrier layer, such as used in a ferroelectric capacitor. Fig. 9 is a flowchart illustrating a procedure for forming a ferroelectric capacitor using the conductive barrier iridium composite film of the present invention.

Page 9 488011 Description of the five 'invention (6) Detailed description of the preferred embodiment Figures 1-3 illustrate the steps of a completely high temperature stable conductive barrier layer used in an integrated circuit. Specifically, the conductive barrier can be used as an electrode in a ferroelectric capacitor. FIG. 1 illustrates a conductive barrier 10, including a substrate, a first barrier film 14 covering the substrate 12, including a button (Ta), and a table-group-oxygen (Ir-Ta- 〇) composite film 16. The rhenium-short-oxygen composite rhenium maintains conductivity even after undergoing a high-temperature annealing process in an oxygen environment. The substrate 12 is selected from the group consisting of materials Shi Xi, polycrystalline Shi Xi, Shi Di Xi, and Shi Xi-germanium compound, so that the first barrier layer 14 prevents the formation of iridium silicide. The first barrier film 14 is selected from the group consisting of materials, groups, silicon nitride buttons (TaSiN) and nitride buttons (TaN). The first barrier layer 14 has a thickness in the range of about 10 to 100 nanometers (nm): 18 degrees. FIG. 2 shows another aspect of the conductive barrier film 10 of FIG. 1. The conductive barrier layer 10 further includes a first barrier film 30, which includes a noble metal, and covers the silver-oxygen composite film 16. The second barrier film 30 improves the interface between the iridium-button-oxygen film 6 and the subsequent deposited layer (not shown), and restricts the diffusion of oxygen into the iridium-button-oxygen film 16. The second barrier film 30 is selected from the group consisting of iridium oxide (IrO2), ruthenium oxide (Ru02), rice, platinum (Pt), and ruthenium (ru). The second barrier film has a thickness 32 in a range of about 10 to 200 nanometers. Fig. 3 illustrates the conductive barrier layer 10 of Fig. 1 or 2 as a part of the ferroelectric capacitor 40. The ferroelectric capacitor 40 further includes a ferroelectric film 42 covering the iridium-button-oxygen film 16. In some aspects of the present invention, the second barrier layer 30 (not,

488011 V. Description of the invention (7) No) Covers the silver composite film 16. The conductive metal film 4 4 covers the ferroelectric film 42. In this way, the ferroelectric film 42 can store a charge between the top electrode 44 and the iridium-button-oxygen electrode 16 and maintain the polarity. The top electrode 4 4 is a noble metal, and the multi-layer electrode 'is an alternative aspect of the present invention. FIG. 4 illustrates the sheet resistance properties of the rhenium composite film of the present invention. A button film of 100 nanometers was deposited on a stone substrate, and the button film was covered with a 300 nanometer iridium group oxygen film. Only the test results show that the far silver-group-oxygen / group / stone xi structure can withstand oxygen annealing at least 100 degrees Celsius for 5 minutes without forming hillocks or peeling. From 500 ° C to 550 ° C, the resistance of this thin plate increases slightly, but begins to decrease when it is higher than 600 ° C. The minimum value was obtained at 850 ° C, and above 900 ° C, the film resistance began to increase. However, the sheet resistance corresponding to 100 ° C is still lower than the sheet resistance before annealing. That is, the iridium-button-oxygen film maintained electrical conductivity after 1000 minutes of oxygen annealing for 5 minutes. The symbol " / " used in the present invention defines a film layer, so the iridium / button is an iridium film layer covering a tantalum film. The symbol used in the present invention, '-' defines a composition or mixture of elements, so that the silver-tantalum film is a composite film including silver and group elements. FIG. 5 illustrates that the iridium composite film of the present invention is less than X-ray diffraction (XRD) spectra at various annealing temperatures at 650 ° C over 5 minutes. The initially deposited iridium composite film system includes extremely fine polycrystalline iridium. I rO2 and T a2 05 peaks did not appear However, it may exist in an amorphous state. During oxygen annealing below 650 degrees Celsius, no crystalline group oxide peak was found, and the increase in intensity corresponds to I r02. This observation shows I r〇 2 began to crystallize, and the crystal grain size of the existing crystals gradually increased. Figure 6 illustrates that the iridium composite film of the present invention is higher than 65 ° C in an oxygen environment.

Page 11 488011 丨 V. Description of the invention (8)-X-ray diffraction (XRD) spectrum at various annealing temperatures below 5 minutes. When it is higher than 70 degrees Celsius, a peak of τ ~ 〇5 and an ideal ratio of I r〇2 are found at the same time. This phenomenon corresponds to a reduction in sheet resistance. At higher temperatures, the Ir02 spike continued to increase, while the IΓ spike decreased. Above 900 ° C, the intensity of the Ir spike was extremely weak, and no increase in the intensity of the ΓΓ02 spike was found. These conditions correspond to an increase in sheet resistance above 850 ° C. No change in the intensity of the τ'05 peak was observed above 700 ° C. No siliconized button or iridium silicide was found here, indicating that the barrier properties of the iridium composite film were not reduced. 7 is a cross-sectional view of an iridium-button-oxygen film covering a silicon substrate according to the present invention. Figure 7 demonstrates the integrity of the film after 5 minutes of oxygen annealing at 950 ° C. No hillocks were formed, and no peeling occurred between the film layers. Fig. 8 is a flowchart illustrating the steps of a method for forming a high-temperature stable conductive barrier layer such as that used in a ferroelectric capacitor. Step 100 is to provide an integrated circuit substrate. The substrate is selected from the group consisting of materials silicon, polycrystalline silicon, dioxide dioxide, and silicon-germanium compounds. Step 0 2 is to deposit a first barrier layer including a button (Ta) covering the substrate. Step 102 includes depositing a first barrier rib selected from the group consisting of light material, silicon nitride (TaSi and nitride button (TaN). Step 102) includes passing through a group selected from chemical vapor deposition, physical vapor deposition, and metal organic chemical vapor. The first barrier layer is deposited by a deposition method. In some aspects of the present invention, step 1 102 includes depositing the first barrier layer at about room temperature. Step 102 also includes depositing the first barrier layer until the thickness is between In the range of about 10 to 100 nanometers. 'Λ I Step 104 deposits an iridium-group-oxygen (Ir-Ta-0) composite film to cover the second

The twelfth stomach 488011; V. Description of the invention (9) I barrier layer. Step 104 includes via a process selected from chemical vapor deposition, physical gas

I I phase deposition and metal organic chemical vapor deposition are used to deposit the iridium-

I I tantalum-oxygen composite film. In some aspects of the present invention, step 104 includes depositing the iridium-button-oxygen composite film at approximately room temperature. Step 104 includes the iridium-button-oxygen composite film selected from the following materials: hafnium, tantalum, and oxygen; silver, tantalum, and Ir02; hafnium, group, and Ta2 05;

Ir02 and Ta205;

Ir02, Ta205, iridium and button; front and group;, iridium and Ta205; r tantalum and Ir02; I Ir02, Ta2 05 and iridium; I r02, Ta2 05 and group; and T a2 〇5 in the aforementioned materials includes T a2 05 and (T a, 0) r-phase transitions. Step 104 includes depositing the silver-group-oxygen composite film to a thickness ranging from about 10 to 500 nanometers. Step 106 is a product that forms a multilayer structure that resists interaction with the substrate. In some aspects of the invention, step 104 includes depositing the iridium-button-oxygen composite film via physical vapor deposition. In detail, individual iridium and button targets are used for co-deposition in an oxygen environment. It is known that all sputtering methods generally use argon (Ar), and in some aspects of the present invention, oxygen and argon are used simultaneously. this

Page 13 488011 V. Description of the invention (10) Outside step 10 4 involves co-sputtering iridium and tantalum at a power in the range of about 200 to 400 watts, where argon is opposite to oxygen. The ratio is about 1: x 'where X is greater than or equal to 1. The power on the tantalum target is greater than or equal to the power on the iridium target. In some aspects of the present invention, the plurality of resource targets are selected from the target materials iridium, tantalum, a composite material of iridium and tantalum, a composite material of iridium and oxygen, and a composite material of button and oxygen. When the resource target includes oxygen, a silver-group-oxygen film can be formed, even if sputtering is not performed in an oxygen environment. Or step 104 includes depositing the iridium-tantalum-oxygen composite film through physical vapor deposition, direct current or RF (radio frequency) sputtering using a single composite resource in an argon environment. The iridium-tantalum composite resource target is selected from materials Ta-Ir02,

Ir'Ta205, Ir02 / T, a205, Ir / Ta / Ir02 / Ta205, Ir-Ir02-Ta205, Ir-Ta-Ir02, Ir-Ta-Ta205, Ta-Ir02-Ta205. As mentioned above, in some aspects of the present invention, the method of coin shooting in step 104 also includes the use of q2 and Ar. In some aspects of the present invention, 'step 1 0 4 is included between about 0 ° C and 1 ° C. Annealing at a temperature in the range of 0 0 0 degrees lasts for a period of about 1 to 30 minutes. In this way, the composite membrane structure is stabilized while maintaining a good electrical conductivity. Partial aspects of the present invention include another step / step 105 (not shown) after step 104 and deposit a second barrier layer, including covering the iridium The precious metal of the -button-oxygen film allows the second barrier layer to resist the diffusion of oxygen into the iridium-plane: oxygen film, and improves the interface of the iridium-tantalum-oxygen film with respect to subsequent deposited materials. Step 105 includes depositing a second barrier film selected from the group consisting of iridium, ruthenium, ιΓ07, Pt, and Ru〇2. The step includes depositing the second barrier layer at a thickness in a range of about 10 to 200 nanometers. The second barrier layer is meridian;

488011 — ----------------------- I V. Description of the invention (11) ^ — | From physical vapor deposition, chemical hafnium deposition and metal organic chemistry Deposition by vapor deposition method i. In some aspects of the present invention, step 105 includes depositing a first barrier layer of suan at approximately room temperature. Figure 9 is a flowchart illustrating the steps of forming a ferroelectric capacitor using the video barrier iridium composite osmium of the present invention. Steps 20 to 204 are repeated from 100 to 104 in FIG. 8. As described above, step 20 5 (not shown) is to deposit a second barrier film i, selected from the group consisting of iridium, nails, Ir02, plane (Pt), and h〇2. Follow-up steps. In step 206, a ferroelectric material is deposited to cover the iridium, tantalum-oxygen composite layer. Step 208 is to deposit a conductive top electrode to cover the ferroelectric material. Step 2 10 is a product in which a ferroelectric electric device is formed. An electrode is provided which can be used to form a ferroelectric electric device. The composite film is composed of a set of oxygen, oxygen, and silver. The silver composite i diffuses the substrate against high temperature degradation in a gaseous environment. 2. When used effectively under the anti-oxidation layer, the conductive barrier formed also inhibits the underlying silicon base. Binary I 'does not form an iridium silicide product that reduces the interface characteristics of the electrode. The iridium oxide maintains conductivity during high-temperature annealing, and it can be peeled and formed into small stands, even under an oxygen atmosphere. The aforementioned iridium compound is used for manufacturing resident memory such as metal ferroelectric metal oxide silicon (MFMOS), metal ferroelectric metal silicon (MFMS), metal ferroelectric insulator and two metal insulator ferroelectric ^ ^^ Metal ferroelectric stone, thermoelectric infrared sensor, optical display, optical switching element, lightning arrester & π # π Mod η. Changer, and surface acoustic wave (SAW) device. In addition, 3 玄 银 才 良 3 膜 可 俊 田 # ^, Yu, He asked about temperature emulsification environment. For example, materials used in the manufacture of large arrow thrusters in aerospace applications. Those who are familiar with this art can know 488011 5. Invention description (12) Other changes and specific examples.

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Claims (1)

488011 Case No. 89103818 > Modification of Years and Months 6. Application for Patent Scope 1. A high-temperature and stable conductive barrier layer in a integrated circuit includes: a base and a first iridium film; 2. If the application includes: The first belongs to the "hunting brother" interface, and the limit is 3. If the application of the barrier film system and ruthenium (R u). 4. If applying for the barrier film system 5. If applying for the material selected from the first barrier 6. If applying for the barrier film system (TaN). 7. As the application materials; a barrier film,-group-oxygen (Ir-silver-group-oxygen complex two barrier film, the second barrier film is modified to diffuse oxygen to the patent scope No. self-iridium oxide (I patent scope has between about 1 0 Patent scope No. Silicon and polycrystalline silicon layer prevent lixivization Patent scope No. from material group, including group (Ta); Ta-0) composite film covering the substrate, covering the second barrier film in high temperature in an oxygen environment Electrical properties of the annealing process. The conductive barrier layer of the first scope of the patent, which additionally includes precious gold covering the silver-oxygen composite film, the iridium-button-oxygen relative to the iridium-button of the subsequent deposited layer- In the oxygen film, the conductive barrier layer of 2 items, wherein the second r02), ruthenium oxide (Ru02) 鈒, # (Pt), and the conductive barrier layer of 3 items, wherein the second to 200 nm range Within the thickness. The conductive barrier layer according to item 1, wherein the substrate, silicon dioxide, and silicon-germanium compound are formed by an iridium product. The conductive barrier layer according to item 1, wherein the first silicon nitride button (T a S i N), and the conductive barrier layer according to item 6 of the patent scope, wherein the first O: \ 63 \ 63071.ptc Page 1 2001.07.09.017 488011 Case No. 89103819 Month Amendment 6. Scope of Patent Application The barrier layer has a thickness in the range of about 10 to 100 nanometers (nm). 8. The conductive barrier layer according to item 1 of the patent application scope, further comprising: a ferroelectric film covering the iridium-button-oxygen film; and a conductive metal film covering the ferroelectric film to form A ferroelectric capacitor can store charge between the top layer and the iridium-tantalum-oxygen electrode. 9. The conductive barrier layer according to item 1 of the application, wherein the iridium-button-oxygen composite film is selected from any one of the following materials: silver, group, and oxygen; iridium, group, and I r 0 2; Silver, Syria, and T a 2 0 5; I r02 ATa2 05; I r 02, Ta205, iridium and tantalum; silver and group; iridium and Ta2 05; group and I r 02; I r02, Ta2 05 and iridium; I r 02, Ta 2 05 and the group; and wherein Ta 2 05 in the foregoing materials includes Ta 2 05 and a τ-phase change of (Ta, 0). 10. The conductive barrier layer according to item 9 of the application, wherein the iridium-tantalum-oxygen composite film has a thickness ranging from about 10 to 500 nanometers. 11. A method for forming a high-temperature stable conductive barrier layer covering an integrated circuit substrate, the method comprising the steps of: O: \ 63 \ 63071.ptc Page 2 2001.07.09.018 488011 _Case No. 89103619_Year Month__ VI. Scope of patent application a) Deposition of the first barrier layer covering the substrate, including the button; and b) Deposition An iridium-tantalum-oxygen (Ir-Ta-0) composite film covering the first barrier layer to form a multilayer structure that can resist its interaction with the substrate. 12. If the method according to item 11 of the patent application scope comprises another step after step b): c) depositing a second barrier layer covering the iridium-button-oxygen composite film, including a precious metal, so that the second The barrier layer can prevent oxygen from diffusing into the iridium-tantalum-oxygen film, and improve the interface of the iridium-button-oxygen film with respect to subsequent deposited materials. 13. The method according to item 12 of the application, wherein step c) comprises depositing a second barrier layer selected from the group consisting of iridium, ruthenium, iridium oxide (Ir02), platinum (Pt), and ruthenium oxide (Ru02). 14. The method according to item 11 of the patent application range, wherein step b) comprises depositing the silver-group-oxygen composite film to a thickness in the range of about 10 to 500 nanometers. 15. The method according to item 13 of the application, wherein step c) comprises depositing by a deposition method selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal organic chemical vapor deposition (MOCVD). The second barrier layer. 16. The method according to item 12 of the patent application, wherein the ferroelectric capacitor is formed, and after step c) additional steps are further included: d) depositing a ferroelectric material covering the iridium-button-oxygen composite layer; and e) depositing a conductive top electrode covering the ferroelectric material to form a ferroelectric capacitor. 17. The method according to item 11 of the patent application, wherein step a) includes O: \ 63 \ 6307i.ptc Page 3 2001.07.09.019 488011 Case No. 89103619 Revised O: \ 63 \ 63071.ptc Page 4 2001.07.09.020 488011 _Case No. 89103619_Year Month Day__ VI. Application for Patent Scope 2 1. As for the method for applying for Item 11 of the patent scope, step b) includes The iridium-button-oxygen composite film was deposited at approximately room temperature. 22. The method of claim 12 wherein step c) includes depositing the second barrier layer at approximately room temperature. 23. The method according to item 17 of the application, wherein step a) comprises depositing the first barrier layer at about room temperature. 2 4. The method according to item 19 of the scope of patent application, wherein step b) comprises depositing the iridium-button-oxygen composite film, direct current common injection of individual inscriptions *, and shoes * in physical oxygen deposition in an oxygen environment. pole. 25. The method of claim 24, wherein step b) comprises co-sputtering the iridium and the button target at a power in the range of about 200 to 400 watts, and wherein the argon is opposite to The ratio to oxygen is about 1: X, where X is greater than or equal to 1. 2 6. The method according to item 25 of the patent application, wherein step b) includes that the power of sputtering on the group of stems is greater than or equal to the power of sputtering on the silver stems. 27. The method of claim 24, wherein step b) comprises annealing at a temperature in the range of about 600 and 1000 degrees Celsius for a period of about 1 to 30 minutes. 28. The method of claim 19, wherein step b) includes depositing the iridium-button-oxygen composite film through physical vapor deposition, and using a single composite resource iridium-button target sputtering in an oxygen environment. . 29. The method of claim 28, wherein step b) includes the silver-group stem electrode selected from the materials T a-I r 02, I r-T a2 05, I r 02 / T a2. 5. O: \ 63 \ 6307i.ptc Page 5 2001.07.09.021 488011 O: \ 63 \ 63071.ptc Page 6 2001.07.09.022