TW574725B - Semiconductor manufacturing device and method for manufacturing a semiconductor - Google Patents

Semiconductor manufacturing device and method for manufacturing a semiconductor Download PDF

Info

Publication number
TW574725B
TW574725B TW91123440A TW91123440A TW574725B TW 574725 B TW574725 B TW 574725B TW 91123440 A TW91123440 A TW 91123440A TW 91123440 A TW91123440 A TW 91123440A TW 574725 B TW574725 B TW 574725B
Authority
TW
Taiwan
Prior art keywords
processing
main body
aforementioned
semiconductor
manufacturing
Prior art date
Application number
TW91123440A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuo Saki
Yukihiro Ushiku
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of TW574725B publication Critical patent/TW574725B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
TW91123440A 2001-10-11 2002-10-11 Semiconductor manufacturing device and method for manufacturing a semiconductor TW574725B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW574725B true TW574725B (en) 2004-02-01

Family

ID=19132313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91123440A TW574725B (en) 2001-10-11 2002-10-11 Semiconductor manufacturing device and method for manufacturing a semiconductor

Country Status (7)

Country Link
US (2) US7082346B2 (enExample)
EP (1) EP1437763A4 (enExample)
JP (1) JP4068327B2 (enExample)
KR (1) KR100529664B1 (enExample)
CN (1) CN1271679C (enExample)
TW (1) TW574725B (enExample)
WO (1) WO2003034474A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
JP5165907B2 (ja) * 2007-03-06 2013-03-21 株式会社東芝 成膜形状シミュレーション方法及び電子デバイスの製造方法
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9461153B2 (en) 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
KR101920870B1 (ko) * 2017-09-15 2018-11-21 한국과학기술연구원 박막의 전기광학적 특성 비접촉식 측정 시스템 및 방법
US11894220B2 (en) 2019-07-17 2024-02-06 Applied Materials, Inc. Method and apparatus for controlling a processing reactor
JP7271403B2 (ja) * 2019-11-26 2023-05-11 エア・ウォーター株式会社 成膜装置および成膜装置の使用方法
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182217A (ja) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd 薄膜形成方法
JP2634595B2 (ja) * 1987-06-22 1997-07-30 株式会社日立製作所 半導体製造装置
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
JPH0855145A (ja) 1994-08-08 1996-02-27 Fujitsu Ltd 半導体プロセスシミュレーション方法及びそのための装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
JPH0917705A (ja) * 1995-06-28 1997-01-17 Tokyo Electron Ltd 連続熱処理方法
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US6240330B1 (en) 1997-05-28 2001-05-29 International Business Machines Corporation Method for feedforward corrections for off-specification conditions
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
JPH11288856A (ja) 1998-04-06 1999-10-19 Sony Corp 半導体シミュレーション方法
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
JP2002057149A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6772034B1 (en) * 2001-07-12 2004-08-03 Advanced Micro Devices, Inc. System and software for data distribution in semiconductor manufacturing and method thereof

Also Published As

Publication number Publication date
KR20040019270A (ko) 2004-03-05
CN1271679C (zh) 2006-08-23
EP1437763A1 (en) 2004-07-14
WO2003034474A1 (fr) 2003-04-24
US7082346B2 (en) 2006-07-25
US20040044419A1 (en) 2004-03-04
EP1437763A4 (en) 2009-01-28
JP2003124084A (ja) 2003-04-25
JP4068327B2 (ja) 2008-03-26
CN1537322A (zh) 2004-10-13
KR100529664B1 (ko) 2005-11-21
US20060217830A1 (en) 2006-09-28

Similar Documents

Publication Publication Date Title
TW574725B (en) Semiconductor manufacturing device and method for manufacturing a semiconductor
JP3836696B2 (ja) 半導体製造システムおよび半導体装置の製造方法
TW200913106A (en) A novel method for monitoring and calibrating temperature in semiconductor processing chambers
TW425635B (en) Rapid thermal processing method and its device
EP0789981A1 (en) Thermal reactor optimization
JP2012238846A (ja) 吸収係数および応力を低減しつつ炭素膜のエッチング選択性を改善する方法
WO2024199318A1 (zh) 工艺参数的确定方法及半导体工艺设备
TWI644190B (zh) 製程系統與製程方法
WO2016047047A1 (ja) Ｓｏｉウェーハの製造方法
JP2017098464A (ja) 熱処理システム、熱処理方法、及び、プログラム
CN112151362B (zh) 一种扩散工艺中的通源操作方法、工艺设备
CN115274488B (zh) 碳化硅裸片与碳化硅掩膜层刻蚀深度选择比预测方法
CN117936631A (zh) 一种扩散方法、装置、系统、存储介质和电子设备
JP2002289542A (ja) 半導体装置の製造方法
JPH0758346A (ja) マイクロフローセンサ及びその製造方法
JPH10303192A (ja) プロセスシミュレーション方法
TWI890608B (zh) 基底處理裝置以及基底處理方法
JP4328516B2 (ja) レジストパターンの形成方法及び加熱処理装置
JP2599445B2 (ja) 半導体装置の製造方法
TWI266675B (en) CMP apparatus for polishing dielectric layer and method of controlling dielectric layer thickness
JPH1154491A (ja) ガス供給方法
JP2844734B2 (ja) 薄膜の製造方法
TW201117410A (en) Control method for etching process of photovoltaic devices
CN104112709A (zh) 一种rc滤波器制造工艺
JPS62198118A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees