CN1271679C - 半导体制造装置以及半导体器件制造方法 - Google Patents

半导体制造装置以及半导体器件制造方法 Download PDF

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Publication number
CN1271679C
CN1271679C CNB028033841A CN02803384A CN1271679C CN 1271679 C CN1271679 C CN 1271679C CN B028033841 A CNB028033841 A CN B028033841A CN 02803384 A CN02803384 A CN 02803384A CN 1271679 C CN1271679 C CN 1271679C
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China
Prior art keywords
processing
controller unit
film thickness
information
internal information
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Expired - Fee Related
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CNB028033841A
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English (en)
Chinese (zh)
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CN1537322A (zh
Inventor
佐喜和郎
牛久幸広
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Toshiba Corp
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Toshiba Corp
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Publication of CN1537322A publication Critical patent/CN1537322A/zh
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Publication of CN1271679C publication Critical patent/CN1271679C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
CNB028033841A 2001-10-11 2002-10-08 半导体制造装置以及半导体器件制造方法 Expired - Fee Related CN1271679C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP313918/2001 2001-10-11
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法
JP313918/01 2001-10-11

Publications (2)

Publication Number Publication Date
CN1537322A CN1537322A (zh) 2004-10-13
CN1271679C true CN1271679C (zh) 2006-08-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028033841A Expired - Fee Related CN1271679C (zh) 2001-10-11 2002-10-08 半导体制造装置以及半导体器件制造方法

Country Status (7)

Country Link
US (2) US7082346B2 (enExample)
EP (1) EP1437763A4 (enExample)
JP (1) JP4068327B2 (enExample)
KR (1) KR100529664B1 (enExample)
CN (1) CN1271679C (enExample)
TW (1) TW574725B (enExample)
WO (1) WO2003034474A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
JP5165907B2 (ja) * 2007-03-06 2013-03-21 株式会社東芝 成膜形状シミュレーション方法及び電子デバイスの製造方法
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9461153B2 (en) 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
KR101920870B1 (ko) * 2017-09-15 2018-11-21 한국과학기술연구원 박막의 전기광학적 특성 비접촉식 측정 시스템 및 방법
US11894220B2 (en) 2019-07-17 2024-02-06 Applied Materials, Inc. Method and apparatus for controlling a processing reactor
JP7271403B2 (ja) * 2019-11-26 2023-05-11 エア・ウォーター株式会社 成膜装置および成膜装置の使用方法
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

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JPS58182217A (ja) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd 薄膜形成方法
JP2634595B2 (ja) * 1987-06-22 1997-07-30 株式会社日立製作所 半導体製造装置
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
JPH0855145A (ja) 1994-08-08 1996-02-27 Fujitsu Ltd 半導体プロセスシミュレーション方法及びそのための装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
JPH0917705A (ja) * 1995-06-28 1997-01-17 Tokyo Electron Ltd 連続熱処理方法
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US6240330B1 (en) 1997-05-28 2001-05-29 International Business Machines Corporation Method for feedforward corrections for off-specification conditions
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
JPH11288856A (ja) 1998-04-06 1999-10-19 Sony Corp 半導体シミュレーション方法
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
JP2002057149A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6772034B1 (en) * 2001-07-12 2004-08-03 Advanced Micro Devices, Inc. System and software for data distribution in semiconductor manufacturing and method thereof

Also Published As

Publication number Publication date
TW574725B (en) 2004-02-01
KR20040019270A (ko) 2004-03-05
EP1437763A1 (en) 2004-07-14
WO2003034474A1 (fr) 2003-04-24
US7082346B2 (en) 2006-07-25
US20040044419A1 (en) 2004-03-04
EP1437763A4 (en) 2009-01-28
JP2003124084A (ja) 2003-04-25
JP4068327B2 (ja) 2008-03-26
CN1537322A (zh) 2004-10-13
KR100529664B1 (ko) 2005-11-21
US20060217830A1 (en) 2006-09-28

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Termination date: 20121008