TW569361B - Gold wire for semiconductor element connection and semiconductor element connection method - Google Patents

Gold wire for semiconductor element connection and semiconductor element connection method Download PDF

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Publication number
TW569361B
TW569361B TW090113064A TW90113064A TW569361B TW 569361 B TW569361 B TW 569361B TW 090113064 A TW090113064 A TW 090113064A TW 90113064 A TW90113064 A TW 90113064A TW 569361 B TW569361 B TW 569361B
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TW
Taiwan
Prior art keywords
gold
gold wire
semiconductor element
weight
ball
Prior art date
Application number
TW090113064A
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English (en)
Inventor
Hiroshi Murai
Shuichi Mitoma
Takeshi Tokuyama
Mitutomo Motomura
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Tanaka Electronics Ind Co Ltd
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Publication date
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Publication of TW569361B publication Critical patent/TW569361B/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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Description

569361 A7
4 569361
將4二球狀物加壓而得之該加壓接合球狀物的外部直徑 大約是該導線直徑的兩倍，所f要之效能的重要性質之一 是改善該加壓接合球的球形或圓。 在過去曾經嘗試在球狀物形成期間，於加壓接合之 前控制該球狀物的球形。不過，近幾年來已經發現，該些 適口用於乍距連接的加壓接合球的圓度，不需要與該些非 加壓接合^的圓度相符。初步的嘗試是改善已經被提出之 該加壓接合球的8]度。舉例來說，日本未審查專利公報hei 第11-163013號揭示添加總量為〇()3_5wt%之銅、麵和把中 至少一種。曰本未審查專利公報HEI第1〇_172998號揭示添 加鈹和鈣，同時日本未審查專利公報HEI第1〇_3〇3239號和 第10-83716號揭示除了猛及纪之外，添加辦或類似物。 經濟部智慧財產局員工消費合作社印製 不過，對於窄距導線而言，用於加壓接合的該些球 比傳統的球用小，而且堆於比較小的加壓接合尺寸而言， 在加壓接合之後它們的圓度應該被維持。在如上所述之技 術中，日本未審查專利公報]^幻第10_172998號有一個缺點 ，其中小球沒有足夠的加壓接合圓度，或者無法達到預定 的導線強度。在導線接合中具有窄距連接，對改善導線強 度以避免因為導線斷裂，而產生連接短路是特別重要的。 其它的技術也有缺點，諸如因為大量的增加元素添 加的量來改善其圓度，結果小球沒有足夠的加壓接合圓度 或高電阻。 除此之外，在半導體元件中需要薄膜鋁電極、且這 些電極要更薄，因為這些凸塊的存在，電極的斷裂特別容 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 569361 A7
經濟部智慧財產局員工消費合作社印製 易出現於凸塊連接的情況中，因而產生半導體元件或積體 電路中，晶片裂解（以下稱為"晶#裂解"）的問題。如前述 之添加元素的含量的急遽增加也會發生晶片裂解問題。 此外，當藉由凸塊建立連接時，一種當該球被壓在 該半導體元件之㈣極商之後，該金料線被向上拉的方 法可以被採用，以在接近該球基部處造成破裂。在此處， 需要使黏^在該加壓接合球之剩餘的導線有一致的長度（ 以下稱為’，尾部長度”）。 藉由先前技藝中這些情況的見解，本發明的目的提 供一種用於半導體元件連接之金質導線，其中有一具有添 加元素不超過200PPm之特殊的金質合金組成物，以將電 阻的增加降至最小，而且其可改善該些小球在加壓接合之 厚的圓度，其具有高導線強度，並且即便是在半導體元件 上有很小的鋁電極薄膜厚度的情況下，不會因加壓貼合產 生曰曰片裂解的問題，同時對於凸塊連接也可以具有均勻的 尾部長度。 發明的說明 本發明提供下列各項，以完成前述的目的。 (1) 用於半導體元件連接之金質導線是由重量百萬分 之5-100的鈣（Ca)、重量百萬分之5_100的釓（Gd)和重量百 萬分之Μ 〇〇的釔（γ)，這些元素的總重量不超過百萬分之 200 ’其餘是金及無可避免的雜質所組成的。 (2) 根據上面第（1)項，該用於半導體元件連接之金質 導線進一步包含重量為百萬分之1-100且由鎂、鈦和鉛中 (請先閱讀背面之注意事項再填寫本頁) Φ 訂 線·
本紙張尺錢时® ®ii?BTs)A4規格（210 X 297公釐） 6 569361 五、發明說明（4 ) =:同時該些添加的元素的總重量不超過重量 ⑽^^半導體元件連接之金質導線是由百萬分之5-:的詞、重量百萬分之5_100的此和重量百萬分之m〇〇 :和至少—種重量為百萬分之M〇〇,由非乱和紀之 兀素中選出’且這些元素的總重量不超過百萬分之· ，八餘是，及無可避免的雜質所組成的。 (4) 根i上面第（3)項’該用於半導體元件連接之金質 導線進-步包含重量為百萬分之M〇〇且由鎂、欽和敍中 至少選出-種，同時該些添加的元素的總重量不超過重量 百萬分之200。 (5) 半導體元件連接方法，其包含 (A) 將金質導線插入毛細管，並且加熱即將該金質導 線的尖端熔融，形成一金質球的步驟， (B) 降低該毛細管並將該金質球壓在該半導體元件的 電極上，以使該金質導線接合在該電極上的步驟， 經濟部智慧財產局員工消費合作社印製 (C) 以含有接合在該電極上之該金質導線的毛細管沿 著預定的路徑移動，使其移動到將被連接之組件上，同時 在該金質導線的一側與將被連接之組件之間形成加壓接合 的步驟， (D) 將已經被加壓接合在該連接組件的金質導線上升 ，同時使用夾子夾住它，以切斷該金質導線，而完成該半 導體元件電極與該連接組件之間的接線的步驟，其中該金 質導線是依據上述第（1)至第（4)項中任一項的金質導線。 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） 五、發明說明（5 ) ⑹上述第（5)項的方法，其中步驟（A)及[或]步驟（c) 進-步包括將超音波傳輪通過該毛細管而至該金質導線的 大端同時以用於熱壓接合該金質球的加熱器組加熱該半 導體元件或連接組件。 (7) 上述第(5)或第(6)項的方法，其中在半導體件上兩 相鄰電極之間的節距不大於7〇微米。 (8) 上，第（5)或第⑹項的方法，其中在半導體件上兩 相鄰電極之間的節距不大於6〇微米。 (9) 半導體元件連接方法，其包含 (A) 將金質導線插入毛細管’並且加熱即將該金質導 線的尖端熔融，形成一金質球的步驟， (B) 降低該毛細管並將該金質球壓在該半導體元件的 電極上，以形成加壓接合金質球的步驟， (C) 將已經在該半導體元件電極上形成加壓接合金質 球的金質導線上升，同時使用夾子夾住它，並在接近該加 壓接合金質球的基部處割斷該金質導線，以在該電極上形 成一個凸塊，其中該金質導線是依據上述第（1)至第（句項 中任一項的金質導線。 (10) 上述第（9)項的方法，其中進_步包含將形成在該 半導體7L件電極上之該塗快加壓接合在將被連接的組件上 (11) 上述第（9)或第（10)項的方法，其中步驟進一 步包括將超音波傳輸通過該毛細管而至該金質導線的尖端 ，同時以用於熱壓接合該金質球的加熱器組加熱該半導體 本紙張尺度適用中國國家標準(CNS)A4規格（21石 297公釐） 569361 A7 B7 五、發明說明（6 ) 元件或連接組件。 (12) 上述第（9)至第（11)項中任一項的方法，其中該半 導體元件電極是铭薄膜電極，薄膜的厚度不超過〇·5微米 〇 (13) 上述第（9)至第（11)項中任一項的方法其中該半 導體元件電極是鋁薄膜電極，薄膜的厚度不超過〇1微米 〇 圖式概要說明 第1A-1D圖是說明球狀接合之導線接合方法的流程圖 〇 第2 A-2D圖是說明凸塊連接方法的流程圖。 第3Α和3Β圖說明半導體元件和由凸塊連接形成之引 線或導線板之間的連接。 第4圖是凸塊的放大圖式。 發明的詳細說明 (1)組成份 [1] 金質起始物 所使用的金質起始物較好是被純化至至少99.99wt% 的高純度金。更好是至少99.995 wt%，在好是至少99.999 wt%。較高純度的金質是較好的，因為其可以使有害組成 份的效應可以消除更多。 [2] [Ca] 相對於被用於本發明中之金質合金導線中的釓和釔 之預定的量，重量為百萬分之5-100的鈣含量可以達到上 本紙張尺錢中國國家標準（cGs)A4規格⑵〇 x 297公爱） 請. 先 閱 讀 背* 之 注 意 事 項 再 填 本 頁 訂 經濟部智慧財產局員工消費合作社印製 569361
五、發明說明（ 述的目的。 >…與鈣含量小於百萬分之5情況相比’如果鈣含量是在 這範圍中，該加壓接合之小球的圓度與斷裂強度可以被改 善，同時在凸塊形成期間尾部長度的均勻性也可以被改善 。與約含量大於百萬分之⑽情況相比，該小球加壓接合 圓度也可以被改善，同時薄膜電極的晶片裂縫也可以被減 少。因此’在相關的釓和釔之預定的量下，該鈣含量是重 量為百萬分之5-100。 [3] [Gd] 相對於被用於本發明中之金質合金導線中的鈣和釔 之預定的量，重量為百萬分之5_1〇〇的釓含量可以達到上 述的目的。 與亂含量小於百萬分之5重量情況相比，如果釓含量 是在這範圍中，該加壓接合之小球的圓度與斷裂強度可以 被改善’同時在凸塊形成期間尾部長度的均勻性也可以被 改善。與釓含量大於百萬分之100重量情況相比，該小球 加壓接合圓度也可以被改善，同時薄膜電極的晶片裂縫也 可以被減少。因此，在相關的鈣和釔之預定的量下，該釓 含量是重量為百萬分之5-100。 [4] [Y] 相對於被用於本發明中之金質合金導線中的鈣和釓 之預定的量，重量為百萬分之1-100的釔含量可以達到上 述的目的。 與紀含量小於百萬分之1重量情況相比，如果紀含量 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請- 先 閱 讀 背- 面 之 注 意 事 項 再 填 寫 本 頁 Φ I I I I I 訂 經濟部智慧財產局員工消費合作社印製 10 569361 A7
範圍中，該加壓接合之小球的圓度與斷裂強度可以 =善’同時在凸塊形成期間尾部長度的均句性也可以被 改善。與釔含量大於百萬分 刀之100重S情況相比，該小球 加壓接合圓度也可以被改善，同時薄膜電極的晶片裂縫也 可以被減少。因此’在相關的舞和亂之預定的量下，該紀 含Ϊ是重量為百萬分之M〇〇。 [5] [1釓和釔之稀土元素] (以下稱為丨1第一族，，元素） 於被用於本發明中之金質合金導線中的舞、亂和纪 之預定的量中’與沒有添加相比，添加至少一種重量為百 萬分之1.1GG的第-族元素是較好的，以進_步改善凸塊 形成期間該小球加壓接合圓度與尾部長度的均句性。在第 一族元素中較好是使用銪、鑭、鈽和錙。 因此，在該預定鈣、釓和釔之預定的量中，添加至 少一種重|為百萬分之M00的第一族元素是較好的。 [6] [鎂、鈦和鉛](以下稱為，，第二族，，元素） 在用於本發明之金質合金導線中，與沒有添加相比 ，於被用於本發明中之金質合金導線中的鈣、釓和釔之預 定的量，或在該添加之第一族元素的預定量中，添加至少 一種重量為百萬分之1-100的第二族元素是較好的。在第 一方矢元素中較好是使用鎮、鈦和錯。 [7] 總添加量 如果在用於本發明之金質合金導線中的總添加重量 超過百萬分之200，薄膜電極可能會發生晶片裂解。而電 (請、先閱讀背面之注咅？事項再填寫本頁) --------tT---------線. 經濟部智慧財產局員工消費合作社印製
本紙張尺度適用中國國豕標準（CNS)A4規格（21G X 297公髮 11 5的361
經濟部智慧財產局員工消費合作社印製 阻增加也不是所希望得到的。添加元素的總添加重量必須 低於百萬分之200。 (2) 金質導線的製造步驟 依據本發明製造用於半導體元件金質導線的步驟的 實施例，現在將被詳細說明。首先在該預定金屬整成物溶 融並將其洗鑄成狀後，凹槽型滾動機器被用來捲起中間 物進行退专’最後以冷做方式產生直徑大約1(M〇〇微米的 細導線，之後進行退火以拉伸4_6%，而且該導線表面塗 佈一層潤滑防鏽劑。最後，完成這些加工步驟之後，最後 在一預定的張力下，該導線通常被捲繞在外部直徑5〇3公 i的捲軸上，以成預疋的長度而形成該產物。該預定的長 度可能在100-300公尺，更長的長度通常也是合適的。 (3) 用途 本發的金質導線被用於半導體元件電極與外部導線（ 或配線板)之間的連接，而且該連接方法一般是藉由球狀 接合進行配線與接合的方法，或者利用金質導線形成凸塊 ，然後透過凸塊建立連接的方法。這些方法說明於第i至 第4圖中。 [1]藉由球狀接合連接的方法 如第1A圖所示，金質導線2通過毛細管1，電喷燈放 於面對它的尖端，並且在它與該金質導線2之間放電，以 加熱金質導線2的尖端、熔融它以形成一個球4。 接著’如第1B圖所示，毛細管1被降低以將該球4加 壓接合在半導體元件6的銘電極5上。此時，超音波震動（ 本紙張尺錢财準(CNS)A4規格㈤ 297公釐） --------訂---------線 (氣先閱讀面之注意事項再填寫本頁) 12
569361 五、發明說明（10 ) 未顯示）通過毛細管1並且在那裡應用它，同時以加熱組加 熱該半導體元件6，使得該球4被熱壓接合，變成一個加壓 接合球4’。 接著，如第1C圖所示，沿著預定的路徑移動毛細管j 且降低至外部導線上。超音波震動（未顯示）通過毛細管1 並且在那裡應用它，同時以加熱組加熱該外部導線8，使 得該加熱導線2的一側被熱壓接合在該外部導線8。 U) 最後，如第1D圖所示，定位器7被升起同時灸住該金 質導線2，如此切斷金質導線2同時完成配線。然後該配線 部份以樹脂密封而完成該半導體裝置。該半導體元件可已 疋樹脂後封型式或陶磁封裝型式，同時沒有特別的限制。 因此，各種不同的導線或電極可以在電極上或在該半導體 裝置的配線側。 此處’該些加壓接合球4’的中心之間的距離（以下稱 為’’節距空間”），與大約80微米之傳統的節距相比，其必 須是不大於70微米，特別是不大於60微米的窄節距。 本發明的金質導線有高強度以及改善的加壓接合球 的圓度，因此在半導體元件中，半導體元件電極及導線部 份具有以金質導線形成的配線部份，而且該配線部份被樹 脂密封，該半導體裝置的節距空間較好是不大於7〇微米。 [2]透過凸塊連接的方法 加壓接合球4,是藉由與第1A和第1B圖所示之相同方 法（參見第2A圖和第2B圖），將球加壓並接合在半導體元 件6上的鋁電極5而形成的。 本紙張尺度適用中國國家標準（CNS)A4規格（21G x 297公髮） --—--- -13 - 請- 先 閱 讀 背. Sj 之 注 意 事 項 再 填 本 頁 Φ 訂 經濟部智慧財產局員工消費合作社印製 569361 A7
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經濟部智慧財產局員工消費合作社印製 569361 A7 _________ B7 五、發明說明（12 ) 壓接合至厚度〇·5微米或更小之薄電極膜，〇.3微米或更小 ’甚至疋0 · 1微米或更小。當球被加壓接合該超薄電極膜 時，容易發生電極斷裂，而導致晶片斷裂。 當使用金質導線形成凸塊時，依據本發明，即便是 加壓接合在超薄電極膜時，尾部長度的變化是最小的，而 且晶片裂解可以被避免，因此其叫適合用於半導體裝置中 ，其中該半導體元件電極與導線透過金質凸塊連接在一起 ’而且該連接被樹脂蜜蜂，同時其中半導體元件紹電極膜 厚度是0.5微米或更小。 實施例 (測試A) 在將預定的量之表1所列元素添加至純度為99.999 % 之高純度金中，而且該混合物在真空熔爐熔融之後，將其 澆鑄而獲得如表1所示之A1至All組成物的金合金旋；以 具有凹槽軋輥以及導線拉伸機械對這些進行冷作，然後以 最後冷作物進行退火以獲得直徑256微米的中間物，將最 後退火至拉伸率為4%之物件的表面塗上潤滑劑，而且每 一條金質合金導線被進行最後加工與測量。 首先進行圓度試驗。型號UTC-200高速自動接合機 (Shinkawa有限公司的產品）首先被用來在金質合金導線的 尖端，使用電喷燈產生電弧放電，而形成一個圓球。用於 電弧放電的電流與時間條件被調整成可以形成兩種型式的 球，一種是直徑55微米（該導線直徑的2.2倍的傳統球）和 一種直徑45微米（該導線直徑1.8倍的小球）。接著，利用 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮） (請先閱讀背面之注意事項再填寫本頁) 訂---------線. 15 569361 Α7 Β7 五、發明說明（ί3 ) 加壓接合工具在200t的模溫下，以組合的超音波熱壓接 合使每一個球熱壓接合在半導體元件鋁電極。 測量傳統球和小球在加壓接合之前與之後的圓度。 在加壓接合之前，這些球的直徑在任一垂直的方向上被測 量’較小直徑/較大直徑筆直被視為是圓度。在加壓接合 之後分別測量垂直於超音波的方向之該加壓接合直徑（以 下稱為X)與平行於超音波的方向之該加壓接合直徑（以下 稱為Y)將X/Y比值是作小球的加壓接合圓度來測定圓度。 50個球的圓度的平均值，如表ί所示。 然後進行晶片損害試驗。使用SBB-1凸塊接合機 (Shinkawa有限公司的產品）在金質合金導線的尖端，以相 同的方法，使用電喷燈產生電弧放電，形成一個球。該球 的大小相當於傳統的球（直徑55微米）。然後，利用加壓接 合工具在200°C的模溫下，以組合的超音波熱壓接合使每 一個球熱壓接合在半導體元件紹電極。所用的半導體元件 電極有一般的厚度（1微米）或微厚度（〇」微米）。對於熱壓 接己條件而a ’超音波輸出是在0.5-15瓦範圍中的第4級 ，同時對於全部12種製造類型而言，負載是在〇·4_〇·8牛頓 範圍中的第3級；而且400個凸塊是在每一種條件下進行試 驗；在任一種條件下，沒有晶片裂解的樣品可以被判定是 符合需求的，同時在任一種條件下，具有晶片裂解的樣品 可以被判定是不符合需求的。測量結果列於表丨中，符合 需求的樣品標記為，，0，，，不符合需求的的樣品標記為，，χ” 請· 先 閱 讀 背· 面 之 注
I 經濟部智慧財產局員工消費合作社印製
16 A7
569361 五、發明說明（U ) 然後進行尾部長度均勻性試驗，除了使用一般厚度（1 Μ米）鋁電極外，以與第二種試驗相同的方法進行熱壓接 合。然後，金質合金導線2被向上拉至如第2(：圖所示的區 域，以形成一個凸塊4，。％第3(：圖，其顯示凸塊的放大 圖式，所示之高度a、b*c被測量。對於每一組條件，利 用冶金顯微鏡測量50個凸塊，其中最大直與最小直之間的 差異被視為是尾部長度的均勻性，結果如表1所列。 然後再室溫亞以抗張試驗測量斷裂負載。結果如表J 所歹|J。 (實驗的實施例） 實驗實施例1-45珠直徑25微米的金質合金導線被完成 ，並且除組成份如表2與表3所示以外，以和測試實施例A 相同的方式測量。 對於該些小情的加壓接合圓度試驗而言，除了形成 小圓球（直徑45微米）之外，每一加壓接合球的圓度以與試 驗A相同的方式測量（圓度試驗），其結果如表2和表3所示 在相同的樣品材料上進行抗張試驗，以決定斷裂負 載’結果如表2和表3所示。 對於晶片損壞試驗，除了使用微小薄膜厚度（〇1微米） 作為半導體元件鋁電極薄膜厚度外，以與試驗A相同的方 式（晶片損壞試驗）測量晶片損壞；其結果如表2和表3所示 對於尾部長度均勻性試驗，除了使用微小薄膜厚度 本紙張尺度適財_ >鮮（CNS)A4規格— (請先閱讀背面之注意事項再填寫本頁) 訂---------線· 經濟部智慧財產局員工消費合作社印製 297公釐） 17 569361 A7
經濟部智慧財產局員工消費合作社印製 (〇·1微米）作為半導體元㈣電極薄膜厚度外，以與試驗A 相同的方式（尾部長度均句性試驗）測量尾冑長度均勾性， 結果如表2和表3所示。 (试驗結果）
試驗A 使用表1所列的組成份進行試驗A，用以探討完成本 發明的目的所需要的元素（樣品A1至All)。 (1) 圓度試驗 下列各項結論可以由該些加壓接合小球的測量而被 提出。 [1] 該些加壓接合小球的圓度小於〇·94是不充足的， 樣品A7不含鈣、釓和釔中之鈣，樣品A3、A4和Al 1不含 釓，樣品八5、八6和人10不含釔，同時樣品八8和八9含有〇5 %的銀或鈷。 [2] 樣品A3至A11傳統大小的球在加壓接合之前或或 加壓接合之後，有符合需求的球圓度0.97或更高，但是小 球在加壓接合之後沒有足夠的圓度。 [3] 含有重量為百萬分之20的鈣、釓和釔的樣品A1在 小球加壓接合之後有符合需求的球圓度0.97。 [4] 除了樣品A1的組成份之外，含有重量為百萬分之 20之第一族元素的的銪的樣品A2，在小球加壓接合之後 有更符合需求的球圓度1.00。 (2) 晶片損壞試驗 下列各項結論可以由該些0· 1微米厚度小電極的晶片 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 18 569361 A7 五、發明說明（16 經濟部智慧財產局員工消費合作社印製 裂解的測試而被提出。 Π]含有0.5%銀或鈷的樣品A8和樣品9呈現出晶片裂 解。 這證實添加元素的量的上限。 (3) 尾部長度變化 下列各項結論可以由尾部長度變化的測試而被提出 〇 Π]樣品A7不含鈣、釓和釔中之鈣，樣品A3、A4*au 不含釓，樣品A5、A6和A10不含釔，具有56微米或更大 ’沒有符合需求之的尾部長度變化。 [2] 含有重量為百萬分之20的鈣、釓和釔的樣品ai， 具有40微米符合需求之尾部長度變化。 [3] 除了樣品A1的組成份之外，含有重量為百萬分之⑼ 之第一族元素的的銪的樣品A2，具有19微米，更符合需 求之尾部長度變化。 (4) 斷裂負載 [1]至少含有重量為百萬分之20之鈣、釓和釔的樣品幻 、樣品A2、樣品A8和樣品A9具有符合斷裂負載需求之 139-140毫牛頓。 m不含有辦但含有重量為百萬分之20之此和紀的樣 品7，且含有鈹和釓的樣品A10有124_12 負載。 牛頓之低斷裂 (5) 結論 對於小球加壓接合之厚的圓度、 日日乃？貝壞和尾部 長 讀- 先 間 讀 背· 面 之 江 意 事 項 存 填 寫 本 頁 Φ I I I I I 訂 線 串 本紙張尺鮮（CNS)A4規格(Ho x挪公髮 569361 A7
經濟部智慧財產局員工消費合作社印製 度變化之參數而言，去昤A 田”、丐、氩1和紀之外含有銷時可以 獲得優異的結果，當這此元 ^ f J 、一 TL素含I較多時，對 接合之後的圓度及晶片損壞的影響較小。 實驗實施例1# 為了要達成本發明的目標，實驗實施例1.45是使用表 2和表3所列的組成份來進行，試驗a後進行該些實驗。 (1)試驗1(試驗A和實驗性實施例卜7) 下列各項結論可以依據表2所列’其中鈣的添加量會 改變，而由試驗I的進行被提出。 [1] 在亂和紀存在情；兄中，㉟添加的重量範圍在百 分之5-100範圍時，對於本發明的目的有優異的效果。， 確地，小球加壓接合之後圓度是0.96-0.97，斷裂負載是 133-145毫牛頓，沒有發現晶片損害而且尾部長度變化是 31-48微米。 [2] 鈣添加的重量小於百萬分之5時，小球加壓接合之 後圓度疋0.93，斷裂負載是127毫牛頓而且尾部長度變化 是78微米，所有結果均不符合要求。 [3] 鈣添加的重量超過百萬分之1〇〇時，結果也不符合 要求’因為小球加壓接合之後圓度是〇 91，且會產生晶 損壞。 [4] 除了鈣、釓和釔之外，當添加銪且鈣添加的重 範圍在百萬分之5-100範圍時，會使本發明有更好的效果 。也就是，小球加壓接合之後圓度是〇.99-1.〇〇 ,尾部長度 變化是13-27微米，其有更優異的結果。 萬 明 片 量 --------------------訂---------線 (tt.先閱讀背面之注意事項再填寫本頁) 本紙張尺&用中關家標準（CNS)A4規格（21G x 297公髮 20 569361
經濟部智慧財產局員工消費合作社印製 (2) 試驗II(試驗A和實驗性實施例8_ i 3) 下列各項結論可以依據表2所列，其中此的添加量會 改變，而由試驗II的進行被提出。 π]在鈣和釔存在情況中，釓添加的重量範圍在百萬 分之5-100範圍時’對於本發明的目的有優異的效果。明 確地’小球加壓接合之後圓度是〇95_〇97,斷裂負載是 138-刚毫牛頓，沒有發現晶片損害而且尾部長度變化是 33-45微米。 [2] 釓添加的重量小於百萬分之5時，小球加壓接合 之後圓度是G.92,尾部長度變化以微米，兩者都不 符合要求。 [3] 釓添加的重量超過百萬分之1〇〇時，結果也不符合 要求，因為小球加壓接合之後圓度是〇·9〇，且會產生晶片 損壞。 θθ [4] 除了鈣、釓和釔之外，當添加銪且釓添加的重量 範圍在百萬分之5-100範圍時，會使本發明有更好的效果 。也就是，小球加壓接合之後圓度是〇·99_1〇()，尾部長度 變化是15-29微米，其有更優異的結果。 (3) 試驗111(試驗a和實驗性實施例14-19) 下列各項結論可以依據表2所列，其中釔的添加量會 改變，而由試驗III的進行被提出。 [1 ]在#5和亂存在情況中，紀添加的重量範圍在百萬 分之1 -100範圍時，對於本發明的目的有優異的效果。明 確地’小球加壓接合之後圓度是〇·95_〇 97，斷裂負載是 本紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公釐） --------^---------$ (請先閱讀背面之注意事項再填寫本頁) 21 569361 A7 B7 員 製 五、發明說明（19 137 142亳牛頓，沒有發現晶片損害而且尾部長度變化是 35-50微米。 。[2]釔"〖、加的重量小於百萬分之$時，小球加壓接合之 後圓度是0.93，而且尾部長度變化是82微米，兩者都不符 合要求。 [3] 釔添加的重量超過百萬分之1〇〇時，結果也不符合 要求，因為小球加壓接合之後圓度是〇.91 ,且會產生晶片 損壞。 [4] 除了鈣、釓和釔之外，當添加銪且釔添加的重量 範圍在百萬刀之1 _ 1 〇〇範圍時，會使本發明有更好的效果 。也就是，小球加壓接合之後圓度是〇98_1〇()，尾部長度 變化是15-29微米，其有更優異的結果。 (4)試驗IV(試驗A和實驗性實施例2〇-3 1) 下列各項結論可以依據表3所列，其中第一族元素（非 釓或釔的稀土元素）的添加量會改變，而由試驗lv的進行 被提出。 [1] 在鈣、釓和釔存在情況中，當第一族元素添加的 重量範圍在百萬分之1-100範圍時，本發明的目的藉由實 驗性實施例20-31和實施例A2會呈現最優異的效果。明確 地，小球加壓接合之後，它會呈現特別優異的圓度為 0.98-1.00,斷裂負載是136_141毫牛頓，沒有發現晶片損 害而且尾部長度變化是15至29微米。 [2] 實驗性實施例3 1，其中第一族元素添加的重量超 過百萬分之100時，結果也不符合要求，因為小球加塵接 本紙張尺度適用中關家標準（CNS)A4規格（2lG χ 297公爱 訂 線 22 5的361 A7 --—__B7 _ 五、發明說明（2〇 ) 合之後圓度是0.91，且會產生晶片損壞。 (5)試驗V(試驗A和實驗性實施例32_45) (請先閱讀背面之注意事項再填寫本頁) 下列各項結論可以依據表3所列，其中第二族元素（鎮 、鈦或鉛）的添加量會改變，而由試驗v的進行被提出。 [1] 在鈣、釓、釔和第一族元素存在情況中，當至少 一種第二族元素添加的重量範圍在百萬分— 範圍， 如試驗iv時，本發明的目的藉由實驗性實施例32_42呈現 最優異的效果。明確地，小球加壓接合之後，它會呈現特 別優異的圓度為0.98-1.00，斷裂負載是137_141毫牛頓， 沒有發現晶片損害而且尾部長度變化是9至18微米。 [2] 貫驗性貫施例43 ’其中總添加的重量超過百萬分 之200，結果是不符合要求的，因為小球加壓接合之後圓 度是0.96，且會產生晶片損壞。 經濟部智慧財產局員工消費合作社印製 [3] 實驗性實施例44和45，其中含有預定量的第二族 元素，但不含有鈣、釓和釔及中的釓或釔和第一族元素， 在小球加壓接合之後圓度是0.91 -0.92，且尾部長度變化是 37-43微米。那些添加預定量之第二族元素的情況中，實 驗性實施例32-42含有約、亂、紀和第一族元素，會產生 更良好的結果。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 23 - 569361 A7 B7 五、發明說明（2!) 表1 組成物 試驗結果 斷 裂 負 載 (mN) 伸 率 (%) 圓度試驗 晶片損壞 試驗 尾部長 度變化 (//m) 重量 % 重量(百萬分之一，ppm) 傳統球 (直徑55微米） 小球(直徑 45微米） 傳統 薄膜 厚度 (1微 米） 小薄 膜厚 度 (0.1 微米) 銀 鈷 鈣 鈹 釓 釔 銪 金 接觸 接合 前 接觸 接合 後 接觸 接合 前 接觸 接合 後 試 驗 A1 20 20 20 剩餘 部份 140 4 1.00 0.98 0.98 0.97 〇 〇 40 A2 20 20 20 20 剩餘 部份 139 4 1.00 0.99 1.00 1.00 〇 〇 19 A3 20 20 剩餘 部份 134 4 1.00 0.99 0.98 0.92 〇 〇 75 A4 20 20 20 剩餘 部份 132 4 0.99 0.98 0.97 0.91 〇 〇 57 A5 20 20 剩餘 部份 133 4 1.00 0.97 0.98 0.93 〇 〇 82 A6 20 20 20 剩餘 部份 134 4 0.99 0.96 0.98 0.94 〇 〇 56 A7 20 20 剩餘 部份 127 4 0.99 0.94 0.98 0.93 〇 〇 78 A8 0.5 20 20 20 剩餘 部份 140 4 0.99 0.90 0.96 0.90 〇 X 26 A9 0.5 20 20 20 剩餘 部份 140 4 0.99 0.90 0.95 0.89 〇 X 32 A10 20 10 20 剩餘 部份 124 4 1.00 0.98 0.97 0.94 〇 〇 60 All 20 10 20 剩餘 部份 135 4 1.00 0.97 0.98 0.91 〇 〇 65 ------------Φ--------1T---------ΜΨ (tf.先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 24 569361 A7 B7 五、發明說明（22 ) 表2 經濟部智慧財產局員工消費合作社印製 組成物(重量，百萬分之一，ppm) 添加的元素 金& 不可 避免 的雜 質 鈣 釓 在乙 第一元素族 第二元素族 總 和 銪 鑭 鈽 錙 小 計 鎂 鈦 鉛 試 驗 I 試驗A7 - 20 20 40 剩餘 部份 實驗性實 施例1 5 20 20 45 剩餘 部份 試驗A1 20 20 20 60 剩餘 部份 實瞼ϋ實 施例2 100 20 20 140 剩餘 部份 實驗f生實 施例3 150 20 20 190 剩餘 部份 實離實 施例4 - 20 20 20 60 剩餘 部份 實驗f生實 施例5 5 20 20 20 - - - 20 - - - 65 剩餘 部份 試驗A2 20 20 20 20 - - - 20 - 讎 - 80 剩餘 部份 實驗14實 施例6 100 20 20 20 - - - 20 - - - 160 剩餘 部份 實驗H實 施例7 150 20 20 20 - - - 20 - - - 210 剩餘 部份 試 驗 II 試驗A3 20 - 20 40 剩餘 部份 實驗1±實 施例8 20 5 20 45 剩餘 部份 試驗Μ 20 20 20 60 剩餘 部份 --------------------訂---------線 (tf.先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) 25 569361 A7 B7 五、發明說明（23 試驗m 經濟部智慧財產局員工消費合作社印製 實驗n實 施例9 實驗f生實 施例10 試^A4 實驗1*生實 施例11 tmA2 實驗Ά實 施例12 實瞼11實 施例13 試驗A5 實驗H實 施例14 試驗A1 實驗睹 施例15 實齡實 施例16 繼A6 實驗II實 施例17 試驗A2 實驗睹 施例18 實驗1±實 |施例19 20
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Q 繼着 20 501 11 20 = (請先閱讀背面之注意事項再填寫本頁) 20 20 20 20 50 1- 20 20 20 20 20 20 50 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）
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繼I
讎I 餘份剩部
繼I --------訂·--------· 26 569361 A7 B7 五、發明說明（24 ) 表2(續） 經濟部智慧財產局員工消費合作社印製 試驗結果 評估 小球加壓接觸 接合厚的圓度 斷裂負載 (mN) 晶片損害 尾部長度 變化(微米） 5式驗I 試驗Α7 X 0.93 127 〇 78 實驗性實施例1 Δ 0.96 133 〇 48 試驗Α1 Δ 0.97 150 〇 40 實驗性實施例2 Δ 0.96 125 〇 31 實驗性實施例3 X 0.91 150 X 25 實驗性實施例4 X 0.94 125 〇 54 實，驗性實施例5 〇 0.99 136 〇 27 試驗Α2 〇 1.00 139 〇 19 實驗〖生實施例6 〇 0.99 146 〇 13 實驗性實施例7 X 0.93 149 X 10 ό式驗II 試驗A3 X 0.92 134 〇 75 實驗性實施例8 Δ 0.95 138 〇 45 試驗Α1 Δ 0.97 140 〇 40 實驗性實施例9 Δ 0.96 140 〇 33 實驗性實施例10 X 0.90 139 X 30 試驗Α4 X 0.91 132 〇 57 實驗性實施例11 〇 1.00 138 〇 29 試驗Α2 〇 1.00 139 〇 19 實驗性實施例Π 〇 0.99 139 〇 15 實驗性實施例13 X 0.93 132 X 13 試驗ΙΠ 試驗Α5 X 0.93 133 〇 82 實驗性實施例14 Δ 0.95 137 〇 50 試驗Α1 Δ 0.97 140 〇 40 實驗性實施例15 Δ 0.95 142 〇 35 實驗性實施例16 X 0.91 143 X 32 試驗Α6 X 0.94 134 〇 56 實驗性實施例17 〇 0.98 138 〇 29 試驗Α2 〇 1.00 139 〇 19 實驗性實施例18 〇 0.99 141 〇 16 實驗性實施例19 X 0.91 141 X 15 --------------------訂---------線 (氣先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 27 569361 A7 B7 五、發明說明（25 ) 表3 經濟部智慧財產局員工消費合作社印製 組成物（重量，百萬分之一，ppm) 添加的元素 金&不可 避免的 雜質 鈣 釓 釔 第一元素族 第二元素族 總 和 銪 鑭 鈽 镏 小 計 鎂 鈦 鉛 試驗A1 20 20 20 60 剩餘部份 實驗性實 施例20 20 20 20 1 _ 細 一 1 - - - 61 剩餘部份 試驗A2 20 20 20 20 - 細 - 20 - - - 80 剩餘部份 實驗性實 施例21 20 20 20 100 - - - 100 - - - 160 剩餘部份 實驗性實 施例22 20 20 20 - 1 - - 1 - - 61 剩餘部份 實驗性實 施例23 20 20 20 - 20 80 剩餘部份 實驗性實1 施例24 5 20 20 - 100 - - 100 - - - 160 剩餘部份 實驗性實 施例25 20 20 20 - - 20 - 20 - - - 80 剩餘部份 實驗性實 施例26 20 20 20 20 - - - 20 - - - 80 剩餘部份 實驗性實 施例27 20 10 10 1 1 痛 - 2 - - - 42 剩餘部份 實驗性實 施例28 20 20 10 1 1 - - 2 腳 - - 52 剩餘部份 實驗性實 施例29 20 40 40 40 40 - - 100 - - - 180 剩餘部份 實驗性實 施例30 20 50 50 20 20 20 20 80 - - - 200 剩餘部份 實驗性實 施例31 20 20 20 150 - - - 150 _ 210 剩餘部份 (請先閱讀背面之注意事項再填寫本頁) Φ 訂---------線_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 28 569361 A7 B7 五、發明說明（26 經濟部智慧財產局員工消費合作社印製 試驗V 試驗A2 20 20 20 20 - - - 20 - - - 80 剩餘部份 實驗性實 施例32 20 20 20 20 - - 每 20 1 - - 81 剩餘部份 實驗性實 施例33 20 20 20 20 - - - 20 20 - - 100 剩餘部份 實驗性實 施例34 20 20 20 20 - - 20 100 - - 180 剩餘部份 實驗性實 施例35 20 20 20 20 - - - 20 - 1 - 81 剩餘部份 實驗性實 施例36 20 20 20 20 - - 20 - 20 - 100 剩餘部份 實驗性實 施例37 20 20 20 20 - - 20 - 100 - 180 剩餘部份 實驗性實 施例3 8 20 20 20 20 - - - 20 - - - 80 剩餘部份 實驗性實 施例3 9 20 20 20 20 - - - 20 - - 20 100 剩餘部份 實驗性實 施例40 20 20 20 20 - - - 20 - 100 180 剩餘部份 實驗性實 施例41 20 20 20 20 - - - 20 20 20 - 120 剩餘部份 實驗性實 施例42 20 20 20 20 垂 - - 20 20 20 20 140 剩餘部份 實驗性實 施例43 20 20 20 20 20 50 50 30 210 剩餘部份 實驗性實 施例44 20 - 20 10 10 20 - 70 剩餘部份 實驗性實 施例45 20 20 - 10 - - - 10 20 _ 70 剩餘部份 (請先閱讀背面之注意事項再填寫本頁) 訂---------線- 尽紙張尺度週用T國國冢標竿（CNS)A4規格（210 X 297公爱） 29 569361 A7 B7 五、發明說明（27 ) 表3(續) 經濟部智慧財產局員工消費合作社印製 試驗結果 評估 小球加壓接觸 接合厚的圓度 斷裂負載 (mN) 晶片損害 尾部長度變化 (微米） 武驗IV 試驗A1 Δ 0.97 138 〇 40 實驗性實施例20 〇 0.98 140 〇 27 試驗A2 〇 1.00 139 〇 19 實驗性實施例21 〇 0.99 137 〇 13 實驗實施例22 〇 0.99 138 〇 29 實驗时施例23 〇 1.00 141 〇 24 實驗生實施例24 〇 0.99 140 〇 20 實驗性實施例25 〇 0.99 138 〇 26 實驗性實施例26 〇 0.98 141 〇 27 實驗性實施例27 〇 0.99 136 〇 28 實驗性實施例28 〇 0.99 137 〇 25 實驗性實施例29 〇 1.00 138 〇 18 實驗性實施例30 〇 0.99 141 〇 15 實驗性實施例31 X 0.91 135 X 26 试驗V 試驗A2 〇 1.00 140 〇 19 實驗實施例32 〇 0.99 139 〇 17 實驗性實施例33 〇 0.98 141 〇 14 實驗性實施例34 〇 0.99 140 〇 9 實驗性實施例35 〇 0.99 140 〇 18 實驗性實施例36 〇 1.00 140 〇 15 實驗性實施例37 〇 0.99 141 〇 12 實驗r生實施例38 〇 0.99 139 〇 18 實驗14實施例39 〇 0.99 137 〇 14 實驗性實施例40 〇 0.98 138 〇 13 實驗性實施例41 〇 0.99 140 〇 13 實驗('生實施例42 〇 0.98 139 〇 10 實驗r生實施例43 X 0.96 140 X 25 實驗性實施例44 X 0.92 132 〇 37 實驗性實施例45 X 0.91 134 〇 1343 (請•先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 30 569361 A7 B7 五、發明說明（28 ) 1…毛細管 2···金質導線 3…電喷燈 4…金質球 4 ’…加壓接合球 5…電極 6…半導體元件 7…夾子 8···外部導線 元件標號對照 14…凸塊 16…半導體元件 21…配線板 a…由毛細管1的較低外側 至該加壓接合的高度 b…自毛細管内部基座至 該加壓接合的高度 c…是導線尾部區域的高 度 (請·先閱讀t*面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 31

Claims (1)

  1. 、申請專利範圍 •—種用於半導體元件連接之金f導線，其由重量百萬 :之5]〇〇的約（Ca)、重量百萬分之5·的亂⑽）和重 Ϊ百萬分之1-100的釔⑺’該等元素的總重量不超過 百萬分之200，其餘是金及無可避免的雜質所組成的。 .如申請專利範圍第！項用於半導體元件連接之金質導線 ，其進-步由重量為百萬分之M〇〇且由鎂、鈦和鉛中 之至少-者所構成，同時該等添加的元素的總重量不 超過重量百萬分之2〇〇。 3· 一種用於半導體元件連接之金質導線，其由重量百萬 分之5-100的鈣、重量百萬分之弘丨⑼的釓和重量百萬 分之1-100的在乙，和重量為百萬分之M〇〇的非亂和紀 之稀土兀素中之至少一者，且這些元素的總重量不超 k百萬刀之200，其餘疋金及無可避免的雜質所組成的 4·如申明專利範圍第3項用於半導體元件連接之金質導線 ，其進一步至少包含鎂、鈦和鉛中一種且重量為百萬 分之1-100，該些添加的元素的總重量不超過重量百萬 分之200。 5· —種半導體元件連接方法，其包含 (A) 將金質導線插入毛細管，並且加熱及將該金質 導線的尖端溶融，形成一金質球的步驟， (B) 降低該毛細管並將該金質球壓在該半導體元件 的電極上’以使該金質導線接合在該電極上的步驟， (C) 以含有接合在該電極上之該金質導線的毛細管 本紙張尺度細巾國國家標準（CNS)A4規格（210 x 297公董） 32 A、申請專利範圍 沿著預定的路徑移動，使其移動到將被連接之組件上 ’同時在該金質導線的一側與將被連接之組件之間形 成加壓接合的步驟， (D)將已經被加壓接合在該連接組件的金質導線上 升’同時使用夾子夾住它，以切斷該金質導線，而完 成該半導體元件電極與該連接組件之間的接線的步驟 其中該金質導線是依據申請專利範圍第（1)至第（4) 項中任一項的金質導線。 6·如申請專利範圍第5項的方法，其中步驟（A)及/或步驟 (C)進一步包括使超音波震動傳輸通過該毛細管而至該 金質導線的尖端，同時以加熱器組加熱該半導體元件 或連接組件，以熱壓接合該金質球。 7’如申印專利範圍第5項或第6項的方法，其中在半導體 件上兩相鄰電極之間的節距不大於7〇微米。 8·如申請專利範圍第5或第6項的方法，其中在半導體件 上兩相鄰電極之間的節距不大於6〇微米。 9· 一種半導體元件連接方法，其包含： 、⑷將金質導線插入毛細管，i且加熱及將該金質 導線的尖端熔融，形成一金質球的步驟， (B) 降低該毛細管並將該金質球壓在該半導體元件 的電極上，以形成加壓接合金質球的步驟， (C) 將已經在該半導體元件電極上形成加祕合金 質球的金質導線上升，同時使用夾子夾住它，並在 經濟部智慧財產局員工消費合作社印製
    本紙張尺度_巾_家鮮（CNS)A4規格（2ϋ 六、申請專利範圍 近違加壓接合金質球的基部處割斷該金質導線，以在 邊電極上形成一個凸塊， 其中該金質導線是依據申請專利範圍第1至第4項 中任一項的金質導線。 10·如申請專利範圍第9項的方法，其中進—步包含將形成 在該半導體元件電極上之該凸塊加壓接合在將被連接 的組件上。 11·如申請專利範圍第9項或第1G項的方法，其中步驟（Α) 進一步包括將超音波震動傳輸通過該毛細管而至該金 質導線的尖端，以加熱器組加熱該半導體元件或連接 組件，以熱壓接合該金質球。 請專利範圍第9項的方法，其中該半導體元件電極 疋鋁薄膜電極，薄膜的厚度不超過〇·5微米。 13.如申請專利範圍上述第9項的方法，其中該半導體元件 電極是鋁薄膜電極，薄膜的厚度不超過〇1微米。 χ 297公釐）
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KR100692495B1 (ko) 2007-03-09
US20020007957A1 (en) 2002-01-24
EP1160344B1 (en) 2009-12-16

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