TW569348B - Method of preparing thermally conductive compounds by liquid metal bridged particle clusters - Google Patents
Method of preparing thermally conductive compounds by liquid metal bridged particle clusters Download PDFInfo
- Publication number
- TW569348B TW569348B TW091120289A TW91120289A TW569348B TW 569348 B TW569348 B TW 569348B TW 091120289 A TW091120289 A TW 091120289A TW 91120289 A TW91120289 A TW 91120289A TW 569348 B TW569348 B TW 569348B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy
- heat
- particles
- thermally conductive
- liquid
- Prior art date
Links
- 229910001338 liquidmetal Inorganic materials 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 19
- 150000001875 compounds Chemical class 0.000 title description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 31
- 239000000956 alloy Substances 0.000 claims abstract description 31
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 9
- 229910052582 BN Inorganic materials 0.000 claims abstract description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 7
- 239000001993 wax Substances 0.000 claims abstract description 5
- 239000004200 microcrystalline wax Substances 0.000 claims abstract description 4
- 230000009969 flowable effect Effects 0.000 claims abstract 6
- 239000000088 plastic resin Substances 0.000 claims abstract 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000011859 microparticle Substances 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 19
- 229910000846 In alloy Inorganic materials 0.000 abstract description 5
- 229920005573 silicon-containing polymer Polymers 0.000 abstract description 2
- 229910000807 Ga alloy Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 33
- 239000000945 filler Substances 0.000 description 11
- 239000008188 pellet Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000009472 formulation Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004945 emulsification Methods 0.000 description 3
- 229910000743 fusible alloy Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 235000019809 paraffin wax Nutrition 0.000 description 1
- 235000019271 petrolatum Nutrition 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920005594 polymer fiber Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 239000012465 retentate Substances 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/301—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen or carbon in the main chain of the macromolecule, not provided for in group H01B3/302
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
- H01B3/306—Polyimides or polyesterimides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F2013/005—Thermal joints
- F28F2013/006—Heat conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0759—Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
Description
569348 A7 _—_________ B7— 五、發明説明(i ) morphing填充物和熱界面物質 相關申請案的交又參考· 本發明是巾請於2_年…日,巾請案號剛43,㈤, 標題「經由液態金屬橋顆粒球團製備熱傳導化合物之方 法」、及中α於2000年10月17日,中請案號G9/69〇 994 , 標述「經由液態金屬橋顆粒球團製備熱傳導化合物之方 法」、及申印於2001年5月25日’申請案號〇9/865,778,標 題「用於印刷電路及半導體^件的熱傳導絕緣框架及其製 備方法」@部分延續,這些中請案全部被指定給同本發明 之相同受託人。 發明背景 本發明一般和為改善從會發熱的半導體元件傳熱到散熱 元件(如熱槽或熱擴散器)而製備熱傳導界面物質及化合物 的方法有關。更特定地說,本發明和製備銦合金混入聚合 物母體混合物有關,該聚合物在室溫是固態,而合金和聚 合物混合物的熔點介於約4〇 t到l2〇t之間,較佳為介於 約40°C到100°c之間。這些金屬合金和聚合物的混合已發 現會大大地減低熱阻或阻抗,該熱阻或阻抗一般來自位於 裝置元件間熱界面邊界或表面間較不完美的接觸。更詳細 地說,本發明涉及將常態為固體的聚合物母體和低熔點銦 金屬合金混合的方法以便形成能和高效能半導體元件共用 的改良熱處理系統。 在典型電子熱處理裝置中,當兩元件之相對面有表面瑕 戚時’產生於兩元件間的熱阻抗或阻力會增加。不良地實 貝接觸歸於一或兩者表面肉眼可見的歪曲、表面粗糙、或 本紙張尺度逋财國國家標準(CNS) A4規格(2ι()χ挪公爱)
裝 569348
發生在一或兩相對接觸面其他不平的特性。不密合的表面 接觸範圍導致有充滿空氣的空洞,其當然是極差的熱導 體。來自不良熱接觸的高熱阻抗、導致非預期的電子元件 加熱,其接著加速如半導體元件及包含裝置之元件的故障 速率。用熱傳導介質取代空氣空隙或空洞,包括良好熱處 理系統’已發現大大地減低熱阻抗及/或阻力。
裝 訂
過去冒提出將液態金屬加入用於會發熱之半導體元件的 熱傳導膏中。在一些案例中,液態金屬尚不適用於此目 的’主要因為液惡金屬傾向形成合金及/或混合物,會改 變或變更固定系統之熱或其他的物理特性,而產生的問 題。其他熱界面物質由分散熱傳導填充物於聚合物母體内 製成。當大部分聚合物母體之熱傳導係數範圍為〇1—〇2w_ πΓ^ίΓ1時,填充物之特性則是相當不同。它們包括有二氧 化石夕,氧化鋅(1〇—sOW-m^K·1),氧化銘 (20-SOW-m'K·1),氮化鋁(lOOW-m^K·1),及氮化硼 pOOW-nTLiT1)。當這些化合物被放入熱接合處,它們會 傾向取代空氣並減低整個熱阻抗。添加一般由細小顆粒組 成的熱傳導填充物’可改善填入空洞化合物的熱傳導。 和我們同在申請的申請案第〇9/543,661號中,揭露了數 個低熔點合金,其極適用在熱處理系統中的熱界面,做為 增強熱能的滲透。本發明經由選擇性地使用某些聚合物母 體來保留低熔點合金,提供另外的熱界面優勢,該母體之 熔點也低,較佳為相當接近包住的合金熔點。這些聚合物 及合金在室溫為固態,而這特點有助於熱界面的操控,特 •5- 569348 A7 _____ B7 五、發明説明( ) 3 7 別是在製造或使用過程中。 依照本發明,改良的界面物質已發展到根據低熔點合金 的加入用做填充物,能依熱及壓力來改變其形狀。在室 溫’這些填充物如是聚合物母體般是固態,而這特點的組 合有助於操作的便利性。此外,這些morphing填充物對熱 和壓力有反應,可藉此流入並填滿可能存在基地内的空氣 2隙或空洞’因而避免粒子間的疏遠或不良接觸(參閱圖 2)。 對那些相對表面面積小或相當平的應用中,可用有薄剖 面的界面。一般在此類應用中,只分散低熔點合金於聚合 物母體中,其分散作用良好(參閱圖3)。對用橫向排列機 械支撐,或那些非常不平的界面,一般希望用高熱傳導顆 粒填充物和低熔點合金之組合,以便製造大熱滲透球團 (例如參閱圖4)。 發明概要 依據本發明,選用在室溫是固態的含銦合金,其熔點介 於約40 C到120°C間。然後將合金尺寸縮小-一般將合金在 熔化狀態下’在感興趣的聚合物母體中乳化。在乳化過程 中’也可加入界面活性劑以增強其流變性及分散的能力。 或者可用吹或撞擊,又或者,可利用在低溫條件下磨碎或 摩擦來達成金屬合金尺寸的縮小。依據儀器的顆粒型態及 顆粒形成的條件,當在縮小顆粒大小時,有可能將界面活 性劑加入正被加工的材料中。然後能將金屬粉末和一定量 的母體聚合物混合(該聚合物亦在室溫時為固態,熔點介 ----— _ 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公------
裝 訂
569348 A7
569348 A7
用傳統處理技術處理,並有效反應在熱處理應用上。 其他及本發明進一步的目標對那些熟悉此項技藝者在研 讀接下來的詳述、附加的中請專利範圍及伴隨的圖形後將 會變明顯。 圖示說明 圖1說明用硬顆粒在傳統聚合物母體内的先前技藝熱界
面’並讀當施加熱或壓力時,其不反應性或不相容的天 性; 圖2類似圖1,用來說明低熔點合金在傳統聚合物母體内 的反應,並顯示其對熱或壓力的反應; 裝 圖3疋一 π意圖,說明分散在傳統聚合物母體内的金屬 合金; 圖4是一示意圖,說明金屬合金滲透球團的排列,在球 訂
團内有熱傳導無機顆粒分散其中,合金/顆粒球團交互排 列於聚合物母體内; 圖5是一示意圖,說明低熔點合金分散於聚合物母體 内,設計給小及/或平的面,並介於會生熱的半導體元件 及熱槽間; 圖6是一示意圖,說明低熔點金屬合金滲透球團和顆粒 的混合,固定位置在橫向排列機械支撐内,以用做介於大 歪曲面間之熱界面,高熱傳導係數填充物的存在被留意其 有助大熱滲透球團的產生; 圖7是一流程圖,說明根據本發明製備熱界面元件的典 型操作步驟; 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 569348 A7
圖8說明根據本發明製備之相變化界面物質的金屬合金 及聚合組份之熱阻抗對溫度的改變;及 圖9說明典型半導體固定在加有突片的熱槽上,並將本 發明的熱界面插在半導體元件和熱槽之間。 較佳實例說明 在實行本發明的步驟中,最先選用熔點介於約4〇r到 100 C _含銦合金’不過合金炫點高到約12〇。〇也可發現 其應用,則是被了解的。較佳為低熔點銦合金如底下提及 地,包括含許多鉍、錫、及/或鋅的銦合金,。 所選用的銦合金經由乳化步驟,其中金屬被縮小成細小 分散型態。較佳為金屬合金被縮小成平均直徑約卜丨00微 米的顆粒。尺寸縮減或乳化可在高剪力攪拌器中進行,並 在此步驟的某一點添加可相容的界面活性劑。 在尺寸縮減之後,金屬微粒被混入聚合物,接著硬化成 聚合物母體的保留物。或者物料可在液態下混合成小金屬 滴分散在聚合物内的乳狀液。 特定較佳具體實例 為描述較佳的具體實例,提供了下列例子: 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 569348 A7
569348 A7 B7 五、發明説明( 表II 配方 母體 合金1 40微米氮化硼 OTES 所佔重 量 體積% 所佔重 量 體積% 所佔重 量 體積% 所佔重 量 體積% 1 1001 30 1200 52 100 15 12 3 2 1001 34 1000 48 83 14 10 4 3 1001 35 1200 61 0 0 12 4 4 1001 40 1000 56 0 0 10 4 5 1002 35 1200 61 0 0 12 4 6 1003 30 1200 52 100 15 12 3
裝- 1由矽氧烷主鏈懸掛烷基支鏈組成的矽蠟,熔點60°C。 2微蠟,熔點60°C。 3由反應性矽氧烷彈性體組成的軟矽酮聚合物。 配方的典型特性列在表111: 表III 配方 熱導係數(W/m-K) 熱阻抗 4(K-cm2/W) 1 >7 0.25 2 5.0 0.20 3 1.8 0.20 6 >7 0.25
線 4美國材料與試驗協會(ASTM)D5470,表面平坦,無機械 支撐。 熱處理應用 -11- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 569348
依照表111配方製備的化合物是不同。特別是配方3、4、 及5可利用一般包括熱沖壓和網版印刷的塗覆技術做成塗 覆層’或是用其他方法直接應用到傳熱面。這些塗覆層一 般剖面厚度低於約丨〇密爾。 對較大頗面的塗覆層,那些含有顆粒填充物的配方,如 配方1、2及6,可有特別的應用。這些塗覆層可用做載 體’如玻璃或聚合物纖維、塑膠膜或金屬箔。當塗覆層有 支撐,易於處理,因而有助於它們在製造上的使用。 傳熱模式 對那些需要親密接觸的應用,即希望接觸線是盡可能薄 的應用’建議用配方3,雖配方4和5也極適用。無論那種 情況,金屬滴將完全變形,以便在不增加支撐的條件下減 少接觸障礙。參如圖5所示的分散示範。 對那些需要機械支撐的應用,可用配方1 ,該配方被注 意到有極良好的熱導特性。此外,當部分金屬成分存於較 大渗透球團中,存於配方中的金屬滴將繼續做為減少接觸 障礙,以增進熱能的傳遞。參如圖6所示滲透球團的分 散0 元件應用 現將注意力直接放在圖9,熱界面依任一選自由表π配 方1到6的配方製出,將該熱界面和傳統會發熱的半導體元 件結合在一起。如前所提,圖9所示裝置3〇包括指在3 1的 發熱半導體元件或整體包裝,該裝置含有熱槽、熱擴散 器、或其他指在32有突片的熱分散膜。插在半導體元件η -12-
訂
線 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 569348 A7 B7 五、發明説明 改善熱傳導性及混合的穩定性。這些顆粒組分最高可有約 1 5%體積比的含量,即使混合物含最高約50。/()體積比的顆 粒組分也可能可用。當混合過程採用液態合金時,合金塗 覆在顆粒上。 聚合物母體 如被指出的,聚合物母體較佳為選自石蠟、微蠟、及含 燒基矽酮的矽蠟。已發現熔點約5〇一6〇 t的微蠟就大部分 目的而言,特別適合這個應用。如前所指,一般希望所用 聚合物母體,其產生相變化的溫度較合金產生相變化的溫 度抵10°C^ 混合合金與聚合物母體 一般較喜在兩組份同為液態時進行此步驟。就此項本 身,材料在咼剪力攪拌器中混合,直到金屬分散到整個聚 合物中,此時,可形成想要熱界面的形式。因該操作步驟 和大部分的液態處理操作相容,可採用傳統製備塗覆物的 技術。 熱界面的特性 如圖1所示,先前技藝中在傳統硬或結實聚合物母體内 有硬顆粒的熱界面,在加熱和壓力下,缺少流動的能力, 因此在相鄰或相對面間產生托高。 圖2說明當加發生相變化的填充物到聚合物母體時,其
表現和活動性’填充物在加熱和壓力下變形和改變其形 狀,藉此讓相對面能相配。 J 圖3示範金屬合金顆粒在聚合物内的分散,該顆粒型態 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
裝 訂
-14- 569348 A7 B7 五、發明説明(12 ) 主要用表面張力現象決定。 參考圖4,該圖顯示被金屬合金包住的無機顯和< ^,化
硼)的滲透球團,和經由不同個別顆粒的合俗法A 叶建到滲透效 果。 將注意力放到圖5,該圖示範用低熔點金屬合金分散在 小和平坦面,發現金屬合金在熱和壓力的影響下會順應形 勢以便增進接觸面積。 參圖6 .,可觀察到分散的金屬合金/無機顆粒渗透球團留 在橫向分散機械支撐元素40-40的範圍内,以便適應大面 積表面或那些有歪曲不平的面。 現把注意力放到圖8,將注意到說明典型熱界面中金屬 合金組份和聚合物之表現與特性的曲線。如已指出的,金 屬合金組份的相變化發生在溫度約lot高於聚合物母體發 生相變化的溫度。關於依循本發明的溫度差,已發現是一 可行的安排。 一般評註 氮化硼或氧化鋁較佳的顆粒大小範圍從直徑或頗面厚度 約1微米到最大40微米。觀察到特別當用液態金屬濕潤 時’似板狀的氮化硼提供較想要的形態及組合。有效的氮 化硼圖示於圖4中。氮化硼的特點或特性也有助於黏度的 控制。 一個用做配方範例的矽蠟是GP- 533(熔點60°C )(密西根 州,Flint的Genesee聚合物),當然這些材料都是市售商品。 用的微蠟是M-7332(熔點55 °C )(康乃狄克州,shelt〇n的 ____ -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公董)
裝_ 訂
線 569348 A7 B7 五、 發明説明(
Moore and Munger)。另一種採用的聚合物母體是部份軟的 反應性碎酮彈性體(曰本,東京GE Toshiba矽酮)。 電阻是本發明配方不尋常且非預期的特性或特徵。已發 現當配方1在厚3-5密爾的墊塊中形成,並插在半導體元件 和熱槽相對面間時,墊塊的電阻係數會大大增加,值最高 可到約1012歐姆-公分(配方1,表II)。
需知上述例子只為說明之用,而非推斷成對接著附上的 申請專利範圍.的限制。 -16- 裝, 訂
線 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- 569348第091120289號專利申請案 中文申請專利範圍替換本(92年10 六、申請專利範圍 1 · 種t備熱傳導機械性相容塾的方法,其包含: (a) 選擇含銦合金,該合金熔點介於約4〇c到約 間; (b) 處理該合金使其成為分散形式; (c )將該分散合金和相容的界面活性劑及熱傳導顆粒 結合,並混成糊狀;及 (d)將該包含分散合金的糊狀物和可流動的塑膠樹脂 物質結合以形成熱傳導機械性相容墊,該熱傳導機械性 相容墊包含體積比介於1 〇%到90%間的分散金屬合金和 熱傳導顆粒,由流動性塑膠樹脂來平衡。 2·如申凊專利範圍第1項的方法,其中組成該熱傳導顆粒 固體的顆粒有一個介於約1到40微米的直徑。 3·如申請專利範圍第1項的方法,其中該液態合金大體上 將該熱傳導顆粒封入以在其上形成塗覆,其中液態合金 對熱傳導顆粒的體積比至少為3: 1。 4·如申請專利範圍第1項的方法,其中該混合糊狀物進一 步和微蠛或碎壤混合成合適稱塾,該稱塾包含體積比介 於約10%到90%間的均質糊狀物,用微蠟或矽蠟來平 衡。 5·如申請專利範圍第1項的方法,其中該液態金屬合金的 特性是當溫度高於60°C時成液態狀。 6. —種配製熱傳導機械性相容墊的方法,其包含步騾: (a)配製下列的混合物: (1)含選自由鎵及銦組合之群的液態金屬合金,當 本紙張尺度適用中國理家標準(CMS) A4規格(210X 297公釐) 569348 Λ8 B8 C8其溫度高於60°C時為液態;及 (2)選自由氮化硼、氮化鋁、及氧化鋁組合之群的 熱傳導顆粒固體; (b) 機械混合該混合物,使該顆粒表面被該液態金屬 合金沾溼成均質糊狀物,其中該液態合金將個別包括該 微粒之該顆粒包住;及 (c) 將該均質糊狀物和可流動的塑膠樹脂物質結合成 熱傳導機械性相容塾,該熱傳導相容塾含約1 〇%到9〇〇/〇 體積比間塗有液態金屬合金的顆粒,由可流動的塑膠樹 脂平衡。 -2- 本紙張尺度適用中國a家樣準(CNS) A4規格(210 X 297公釐>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/946,879 US6797758B2 (en) | 2000-04-05 | 2001-09-05 | Morphing fillers and thermal interface materials |
Publications (1)
Publication Number | Publication Date |
---|---|
TW569348B true TW569348B (en) | 2004-01-01 |
Family
ID=25485106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091120289A TW569348B (en) | 2001-09-05 | 2002-09-05 | Method of preparing thermally conductive compounds by liquid metal bridged particle clusters |
Country Status (7)
Country | Link |
---|---|
US (1) | US6797758B2 (zh) |
EP (1) | EP1291913B1 (zh) |
JP (1) | JP4047126B2 (zh) |
AT (1) | ATE352871T1 (zh) |
CA (1) | CA2401299C (zh) |
DE (1) | DE60217779T2 (zh) |
TW (1) | TW569348B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104031600A (zh) * | 2013-03-04 | 2014-09-10 | 中国科学院理化技术研究所 | 一种绝缘的导热金属胶及其制造方法 |
CN105038716A (zh) * | 2015-07-03 | 2015-11-11 | 中国科学院理化技术研究所 | 一种各向异性导热材料及其制备方法 |
US10068830B2 (en) | 2014-02-13 | 2018-09-04 | Honeywell International Inc. | Compressible thermal interface materials |
CN110105758A (zh) * | 2019-05-15 | 2019-08-09 | 东南大学 | 一种基于液态金属的电子封装材料的制备及其应用方法 |
US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
CN114525117A (zh) * | 2022-03-31 | 2022-05-24 | 四川大学 | 一种高导热液态金属/氮化硼复合材料及其制备方法 |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7976941B2 (en) * | 1999-08-31 | 2011-07-12 | Momentive Performance Materials Inc. | Boron nitride particles of spherical geometry and process for making thereof |
US6713088B2 (en) * | 1999-08-31 | 2004-03-30 | General Electric Company | Low viscosity filler composition of boron nitride particles of spherical geometry and process |
US20070241303A1 (en) * | 1999-08-31 | 2007-10-18 | General Electric Company | Thermally conductive composition and method for preparing the same |
US6984685B2 (en) * | 2000-04-05 | 2006-01-10 | The Bergquist Company | Thermal interface pad utilizing low melting metal with retention matrix |
GB2395360B (en) * | 2001-10-26 | 2005-03-16 | Ngk Insulators Ltd | Heat sink material |
JP2003201528A (ja) * | 2001-10-26 | 2003-07-18 | Ngk Insulators Ltd | ヒートシンク材 |
JP3803058B2 (ja) * | 2001-12-11 | 2006-08-02 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体 |
CA2474740C (en) | 2002-02-06 | 2011-10-11 | Parker-Hannifin Corporation | Thermal management materials having a phase change dispersion |
US6946190B2 (en) * | 2002-02-06 | 2005-09-20 | Parker-Hannifin Corporation | Thermal management materials |
US7846778B2 (en) * | 2002-02-08 | 2010-12-07 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US7473995B2 (en) * | 2002-03-25 | 2009-01-06 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US6703128B2 (en) * | 2002-02-15 | 2004-03-09 | Delphi Technologies, Inc. | Thermally-capacitive phase change encapsulant for electronic devices |
US7147367B2 (en) * | 2002-06-11 | 2006-12-12 | Saint-Gobain Performance Plastics Corporation | Thermal interface material with low melting alloy |
JP4551074B2 (ja) * | 2003-10-07 | 2010-09-22 | 信越化学工業株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
US20050072334A1 (en) * | 2003-10-07 | 2005-04-07 | Saint-Gobain Performance Plastics, Inc. | Thermal interface material |
US20050228097A1 (en) * | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
WO2005119771A1 (en) * | 2004-05-20 | 2005-12-15 | General Electric Company | Organic matrices containing nanomaterials to enhance bulk thermal conductivity |
US7498376B2 (en) * | 2004-06-23 | 2009-03-03 | Delphi Technologies, Inc. | Thermal transient suppression material and method of production |
JP4086822B2 (ja) | 2004-08-19 | 2008-05-14 | 富士通株式会社 | 熱伝導構造体及び熱伝導構造体の製造方法 |
TWI266591B (en) * | 2005-05-05 | 2006-11-11 | Amulaire Thermal Technology In | Heat dissipation apparatus having low-melting point alloy coating-layer and its manufacturing method |
US7886813B2 (en) * | 2005-06-29 | 2011-02-15 | Intel Corporation | Thermal interface material with carbon nanotubes and particles |
CN1919962A (zh) * | 2005-08-26 | 2007-02-28 | 鸿富锦精密工业(深圳)有限公司 | 一种热界面材料及其制备方法 |
US20070284730A1 (en) * | 2006-06-12 | 2007-12-13 | Wei Shi | Method, apparatus, and system for thin die thin thermal interface material in integrated circuit packages |
US20080166552A1 (en) * | 2006-11-06 | 2008-07-10 | Arlon, Inc. | Silicone based compositions for thermal interface materials |
TWI344196B (en) * | 2006-11-15 | 2011-06-21 | Ind Tech Res Inst | Melting temperature adjustable metal thermal interface materials and use thereof |
US7462294B2 (en) * | 2007-04-25 | 2008-12-09 | International Business Machines Corporation | Enhanced thermal conducting formulations |
EP2031098B1 (en) * | 2007-08-28 | 2019-05-29 | Rohm and Haas Electronic Materials LLC | Composition and corresponding method for the electrodeposition of indium composites |
EP2188836A2 (en) * | 2007-09-11 | 2010-05-26 | Dow Corning Corporation | Thermal interface material, electronic device containing the thermal interface material, and methods for their preparation and use |
WO2009035906A2 (en) * | 2007-09-11 | 2009-03-19 | Dow Corning Corporation | Composite, thermal interface material containing the composite, and methods for their preparation and use |
US7760507B2 (en) * | 2007-12-26 | 2010-07-20 | The Bergquist Company | Thermally and electrically conductive interconnect structures |
JP4913874B2 (ja) * | 2010-01-18 | 2012-04-11 | 信越化学工業株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
US8348139B2 (en) * | 2010-03-09 | 2013-01-08 | Indium Corporation | Composite solder alloy preform |
US9346991B2 (en) | 2011-04-14 | 2016-05-24 | Ada Technologies, Inc. | Thermal interface materials and systems and devices containing the same |
WO2015084778A1 (en) | 2013-12-05 | 2015-06-11 | Honeywell International Inc. | Stannous methansulfonate solution with adjusted ph |
CN103865271B (zh) * | 2014-03-20 | 2017-04-05 | 北京化工大学 | 一种纳米杂化材料改性的有机硅导热电子灌封胶的制备方法 |
CA2951437C (en) | 2014-07-07 | 2022-03-15 | Honeywell International Inc. | Thermal interface material with ion scavenger |
MY183994A (en) | 2014-12-05 | 2021-03-17 | Honeywell Int Inc | High performance thermal interface materials with low thermal impedance |
WO2017044712A1 (en) | 2015-09-11 | 2017-03-16 | Laird Technologies, Inc. | Devices for absorbing energy from electronic components |
US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
WO2017109526A1 (en) * | 2015-12-22 | 2017-06-29 | Arcelormittal | A method of heat transfer of a non-metallic or metallic item |
US10720261B2 (en) * | 2016-02-02 | 2020-07-21 | Carnegie Mellon University, A Pennsylvania Non-Profit Corporation | Polymer composite with liquid phase metal inclusions |
CN108701894B (zh) * | 2016-03-25 | 2021-05-18 | 康普技术有限责任公司 | 具有由轻质介电材料形成的透镜和相关介电材料的天线 |
US11431100B2 (en) | 2016-03-25 | 2022-08-30 | Commscope Technologies Llc | Antennas having lenses formed of lightweight dielectric materials and related dielectric materials |
US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
US11527835B2 (en) | 2017-09-15 | 2022-12-13 | Commscope Technologies Llc | Methods of preparing a composite dielectric material |
US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
CN108129841B (zh) * | 2017-12-25 | 2020-10-23 | 云南靖创液态金属热控技术研发有限公司 | 一种液态金属绝缘导热材料及其制备方法 |
WO2019136252A1 (en) * | 2018-01-05 | 2019-07-11 | Carnegie Mellon University | Method of synthesizing a thermally conductive and stretchable polymer composite |
CN108822551A (zh) * | 2018-07-09 | 2018-11-16 | 山东联星能源集团有限公司 | 一种硅胶石墨烯液态金属复合材料及其制备方法 |
CN108997980B (zh) * | 2018-08-02 | 2021-04-02 | 中国工程物理研究院化工材料研究所 | 一种光纤激光器用相变导热材料、制备方法及应用方法 |
CN108994292B (zh) * | 2018-09-18 | 2019-07-09 | 北京梦之墨科技有限公司 | 一种低熔点金属的改性方法 |
US10777483B1 (en) | 2020-02-28 | 2020-09-15 | Arieca Inc. | Method, apparatus, and assembly for thermally connecting layers |
CN111777995A (zh) * | 2020-07-14 | 2020-10-16 | 深圳市乐普泰科技股份有限公司 | 一种绝缘的高效导热硅脂及其制备方法 |
CN114075386A (zh) * | 2021-08-27 | 2022-02-22 | 苏州泰吉诺新材料科技有限公司 | 具有双连续结构的液体金属树脂复合材料及其制备方法 |
CN114539723B (zh) * | 2022-04-21 | 2022-08-05 | 空间液态金属科技发展(江苏)有限公司 | 具有各向异性的高性能热界面材料及其制备方法 |
CN117285822A (zh) * | 2023-01-06 | 2023-12-26 | 六安铭芯信息科技有限公司 | 一种热界面材料及其制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3226608A (en) | 1959-06-24 | 1965-12-28 | Gen Electric | Liquid metal electrical connection |
US3248615A (en) | 1963-05-13 | 1966-04-26 | Bbc Brown Boveri & Cie | Semiconductor device with liquidized solder layer for compensation of expansion stresses |
CS182611B1 (en) | 1976-03-18 | 1978-04-28 | Pavel Reichel | Power semiconducting element |
US4147669A (en) | 1977-03-28 | 1979-04-03 | Rockwell International Corporation | Conductive adhesive for providing electrical and thermal conductivity |
US4233103A (en) | 1978-12-20 | 1980-11-11 | The United States Of America As Represented By The Secretary Of The Air Force | High temperature-resistant conductive adhesive and method employing same |
US4323914A (en) | 1979-02-01 | 1982-04-06 | International Business Machines Corporation | Heat transfer structure for integrated circuit package |
US4254431A (en) | 1979-06-20 | 1981-03-03 | International Business Machines Corporation | Restorable backbond for LSI chips using liquid metal coated dendrites |
JPS57107501A (en) | 1980-12-25 | 1982-07-05 | Sony Corp | Conduction material |
JPH0770650B2 (ja) | 1986-10-20 | 1995-07-31 | 富士通株式会社 | 半導体装置の冷却方法 |
US5053195A (en) | 1989-07-19 | 1991-10-01 | Microelectronics And Computer Technology Corp. | Bonding amalgam and method of making |
US5225157A (en) | 1989-07-19 | 1993-07-06 | Microelectronics And Computer Technology Corporation | Amalgam composition for room temperature bonding |
CA2018930C (en) * | 1989-08-03 | 1999-11-09 | Richard B. Booth | Liquid metal matrix thermal paste |
US5173256A (en) | 1989-08-03 | 1992-12-22 | International Business Machines Corporation | Liquid metal matrix thermal paste |
US5198189A (en) | 1989-08-03 | 1993-03-30 | International Business Machines Corporation | Liquid metal matrix thermal paste |
US5056706A (en) | 1989-11-20 | 1991-10-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5170930A (en) | 1991-11-14 | 1992-12-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5445308A (en) | 1993-03-29 | 1995-08-29 | Nelson; Richard D. | Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal |
US5328087A (en) | 1993-03-29 | 1994-07-12 | Microelectronics And Computer Technology Corporation | Thermally and electrically conductive adhesive material and method of bonding with same |
US6339120B1 (en) * | 2000-04-05 | 2002-01-15 | The Bergquist Company | Method of preparing thermally conductive compounds by liquid metal bridged particle clusters |
DE1143511T1 (de) * | 2000-04-05 | 2002-02-21 | The Bergquist Company, Chanhassen | Preparation thermisch leitender Stoffe durch flüssigmetallüberbrückte Teilchengruppen |
-
2001
- 2001-09-05 US US09/946,879 patent/US6797758B2/en not_active Ceased
-
2002
- 2002-09-04 AT AT02256137T patent/ATE352871T1/de not_active IP Right Cessation
- 2002-09-04 CA CA002401299A patent/CA2401299C/en not_active Expired - Fee Related
- 2002-09-04 EP EP02256137A patent/EP1291913B1/en not_active Expired - Lifetime
- 2002-09-04 DE DE60217779T patent/DE60217779T2/de not_active Expired - Lifetime
- 2002-09-04 JP JP2002298038A patent/JP4047126B2/ja not_active Expired - Fee Related
- 2002-09-05 TW TW091120289A patent/TW569348B/zh not_active IP Right Cessation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104031600A (zh) * | 2013-03-04 | 2014-09-10 | 中国科学院理化技术研究所 | 一种绝缘的导热金属胶及其制造方法 |
CN104031600B (zh) * | 2013-03-04 | 2016-03-23 | 中国科学院理化技术研究所 | 一种绝缘的导热金属胶及其制造方法 |
US10068830B2 (en) | 2014-02-13 | 2018-09-04 | Honeywell International Inc. | Compressible thermal interface materials |
CN105038716A (zh) * | 2015-07-03 | 2015-11-11 | 中国科学院理化技术研究所 | 一种各向异性导热材料及其制备方法 |
CN105038716B (zh) * | 2015-07-03 | 2018-11-16 | 中国科学院理化技术研究所 | 一种各向异性导热材料及其制备方法 |
US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
CN110105758A (zh) * | 2019-05-15 | 2019-08-09 | 东南大学 | 一种基于液态金属的电子封装材料的制备及其应用方法 |
CN114525117A (zh) * | 2022-03-31 | 2022-05-24 | 四川大学 | 一种高导热液态金属/氮化硼复合材料及其制备方法 |
CN114525117B (zh) * | 2022-03-31 | 2023-02-28 | 四川大学 | 一种高导热液态金属/氮化硼复合材料及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
ATE352871T1 (de) | 2007-02-15 |
JP2003234586A (ja) | 2003-08-22 |
EP1291913A2 (en) | 2003-03-12 |
DE60217779T2 (de) | 2007-11-15 |
CA2401299A1 (en) | 2003-03-05 |
CA2401299C (en) | 2009-03-10 |
EP1291913A3 (en) | 2004-10-06 |
US6797758B2 (en) | 2004-09-28 |
JP4047126B2 (ja) | 2008-02-13 |
DE60217779D1 (de) | 2007-03-15 |
EP1291913B1 (en) | 2007-01-24 |
US20030027910A1 (en) | 2003-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW569348B (en) | Method of preparing thermally conductive compounds by liquid metal bridged particle clusters | |
USRE39992E1 (en) | Morphing fillers and thermal interface materials | |
US6284817B1 (en) | Conductive, resin-based compositions | |
CN108192576A (zh) | 一种液态金属热界面材料及其制备方法和应用 | |
JP3957596B2 (ja) | 熱伝導性グリース | |
TW200305595A (en) | Curable silicone gum thermal interface material | |
TW583227B (en) | Method of preparing thermally conductive compounds by liquid metal bridged particle clusters | |
JP2007277387A (ja) | 熱伝導性シリコーングリース組成物 | |
JP3891969B2 (ja) | 熱伝導性グリース | |
JP2002003830A (ja) | 高熱伝導性組成物とその用途 | |
JP3794996B2 (ja) | 熱伝導性樹脂組成物及びフェーズチェンジ型放熱部材 | |
JP2003113313A (ja) | 熱伝導性組成物 | |
JP2010285569A (ja) | 熱伝導性樹脂材料およびその製造方法 | |
JP2002121292A (ja) | 液体金属架橋粒子クラスターによる熱伝導性化合物の製法 | |
WO2022191238A1 (ja) | 熱伝導性樹脂組成物及び熱伝導性樹脂材料 | |
CN113185953A (zh) | 热界面材料及其制造方法 | |
CN113150551A (zh) | 热界面材料及其制造方法 | |
JP2000233452A (ja) | 熱伝導性シリコーンゲルシート | |
JP2002020625A (ja) | 高熱伝導性組成物とその用途 | |
WO2021171970A1 (ja) | 熱伝導性シリコーン組成物及び熱伝導性シリコーン材料 | |
JP2003023127A (ja) | 電子機器の放熱部材形成用粒状材料及び用途 | |
TWI224123B (en) | Thermal interface material composition | |
JP2002217342A (ja) | 相変化型放熱部材及びその製造方法、用途 | |
JP2001342352A (ja) | 高熱伝導性組成物及びその用途 | |
TW201410857A (zh) | 人造鑽石導熱膏及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |