TW567599B - Wafer level package with air pads and manufacturing method thereof - Google Patents

Wafer level package with air pads and manufacturing method thereof Download PDF

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Publication number
TW567599B
TW567599B TW091134312A TW91134312A TW567599B TW 567599 B TW567599 B TW 567599B TW 091134312 A TW091134312 A TW 091134312A TW 91134312 A TW91134312 A TW 91134312A TW 567599 B TW567599 B TW 567599B
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Taiwan
Prior art keywords
metal
pad
patent application
metal connection
layer
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TW091134312A
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English (en)
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TW200303078A (en
Inventor
Gu-Sung Kim
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Samsung Electronics Co Ltd
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Publication of TW200303078A publication Critical patent/TW200303078A/zh
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Publication of TW567599B publication Critical patent/TW567599B/zh

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Description

567599 ⑴ 狄、發明說明 u月况鳩敘明.發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 發明背景 術領娀 、,、^月大致有關半導體製造，更特別地是，有關一具有 增進連接可靠度的晶圓層級封裝（WLp)和—製造方法。 2^_先前拮術 為了符口幸又新一代電子產品的封裝需求，必須花費心血 =創k可Λ、具成本效益、微小、和高性能的封裝。上述 而求例如疋電子訊號傳遞延遲的降低、整體零件區的減少 、和在輸入/輸出（1/〇)端點位置有更廣的自由。 為了符合這些要求，一 WLp已被開發，其中一陣列的外 部I/O端點分布在半導體晶片表面上，而不是只是位於在一 個或更多晶片邊緣的周圍如傳統的導線架封S。典型地， 一陣列的錫球提供表面分布1/0端點給WLP。上述端點位置 的分布降低埋置訊號線的需要，其連接積體電路IC的電路 區塊到位於邊緣的傳統1/0端點。消除上述訊號線增進裝置 的電性，因為這樣的線典型地有一高電容。而且，當鎮上 時此區域被WLP佔領’並且藉由錫球和一印刷電路板或其 他基板連接，、是曰曰片大小’而不是封裝的導線架大小。因 此，WLP的尺寸可做得非常小。 圖1表示一傳統錫球連接結構的剖面視圖。晶片1〇有一連 接墊20藉由錫球4G黏著到基板或印刷電路板（pCB)5〇。然而 如此連接衣置的一重大缺點是金屬錫球4〇是最無彈性 的。在連接塾20和锡球40間的接合處以陰影區3〇表示。此 陰影區30和錫球40是相同的材料並以不同的元件顯示只是 (2) (2)567599
為了解釋的目白勺’為了顯示後續裂縫的作用和導致於晶片 10和PCB 50間分歧移動的無彈性應力。 囷1 b_ 1 c表示圖1 &所示傳統錫球結構在不同熱循環階段 』間的d面視圖’ #即分別是加熱和冷卻，顯示垂直移動 和作用在連接結構的力量導致膨脹和縮收。 參照圖lb，在一般和電子裝置典型操作有關的熱變化下 :在石夕晶片U)和環氧道璃pcB5〇間一顯著不一致的熱膨服 係數（CTE)會導致機械應力作用在錫球連接的接合處。換 言之，當晶片跡熱時，晶片1〇和PCB 50都以不同比率膨 脹，其會產生如圖lb的扭曲。當熱去除時，晶片i〇*pcB5〇 :以不同比率縮收如圖lc所示。這相對的膨脹和縮收對固 貫的連接亦即錫球40產生應力。如此膨脹/縮收差異對於 較大的晶片尺寸變得更明顯，晶片的周圍區域比晶片的中 間部分呈現更大顯著的膨脹。 可=易看出’當一側或另一相對側的銲錫連接移動，例 如在前述熱膨脹和縮收期間，可看到—扭力作用在錫球4〇 和接合處30。典型地，以低於錫球熔點溫度的重覆膨脹和 縮收，對固實接合處30可被充足的加壓來從墊20引起分裂 或裂縫如圖le區域標示32所示，因此傷害銲錫連接的可靠 度。 因此，對於WLP具有改善連接可靠度有一展示的需要， 特別是在晶片和PCB之間，以及製造的方法。 發明内容 本發明的-特徵是提供—半導體裝置封裝產品，例如基 (3) (3)567599 圓，級封裝（WLP)具有絕佳的可靠度並降低生 根據本發明—較佳呈 — 成本 I/O端點的特色為”::母一個表面分布多數的 規則形凹洞在一其板内A。虱塾的結構包㈣刻-不 支擇声到凹ί内積一由可溶解材料做成的暫時 s ” 儿積一金屬連接墊到暫時支撐層上、以 便至少部分的全屬；鱼姑 曰上 w 部分相心。 伸超過不規則相洞並覆蓋一 二:ir=然後溶解支撐層來產生空氣緩衝在金屬 玉屬連接墊被前述覆蓋的基板部支撐 此氣墊的特色_為一支撐結構，其中一 超過全眉i皇垃轨— ’、 ;;豆工間侧向延伸 孟屬連接墊。在金屬連接㈣·附近有充分的 支撐=金!：妾墊的沉積/形成時需要移除暫時的可溶解 ;:科、和2)-般熱的自由度與振動的移動沒有和基板 具體實施例中，在晶圓層級封裝中提 :…連接的、4包括一金屬連接塾其覆蓋一氣穴 至>-。P分的氣穴側向延伸超過金屬連接墊，： 連接塾覆蓋並接觸到多數的周圍支撐結構。而/、中金屬. 多數的周圍支撐結構也支撐配線圖案 =至少一 連接塾到其他晶片上的電路。 地連接金屬 -較佳氣穴是定義在介電層，其中介電層 提供支撐給金屬連接墊。至少一突出 f用來 案有電地連接到金屬連接墊。此外，此結:能支撑配線圖 一第二介電層穿過它一部分的金屬連接墊晨1 =步包含 -保護金屬層形成在金屬連接墊暴露的部：：。來，並且 (4) 567599
—~· 一 =^發明’在晶®層級封裝中提供彈性連接結構的製 二=包括較佳的步驟為：形成—氣穴在半導體基板上； 圖㈣材料填入氣穴；形成一金屬層在可移除材料上； 氣；側：屬層來形成一金屬連接墊，其藉由至少-部分的 除材=Γ:Γ墊來完成;從氣穴中移除可移 “屬層…將可移除材料平坦化，且此平坦化 單程或一CMP製程來執行。此可移除材料可選自由 早體材料、多體材料、和彈性體材料組成之群，例如— 解rrbie材料。此可移除材料可藉由濕钱刻化學劑來溶 ^最好藉由沉積-介電層和使用一微影製程來圖宰化 ^"電層而形成。此外，在形成金屬連接墊之後， 可沉積在金屬連㈣上以致—部分的 穿過：介電層暴露出來。再者，藉由使用無電解電鑛二 沉積在金屬連接塾上。此保護層可使用選 和鎳組成之群的金屬構成。 ” 使用-低介電材料如空氣在連接墊之下 =增加相關電子訊號傳遞的速度。藉由構成只有在^ U以圍墊具有支撐墊的結構’一完成的鲜锡連接可吸 +導體晶片和印刷電路板間分歧移動相關的機械應 本發明的這些和其他特徵對普通熟悉此 下詳述後將报快地明白。 β 在看凡以 (5) (5)567599
實施方式 。康本毛月’ 一彈性氣墊連接結構在積體電路（1C)的晶 圓層、.及封哀(WLP)中提供_低介電電容’其分隔一輸入/輸 出（I/O)金屬連接墊和其下具有電路的—基板。傳統無彈性 耽塾連接結構被典型㈣封住且被緊鄰層所有邊緣支撐著 。使用此結構只是降低-節點的電容，其藉由以具有低介 電常數的空氣㈣-有機切基的介電材料在電容的電極 板=間（亦即連接塾和基板）。然而’本發明的氣塾結構提供 最v數里的支撐點/導電接觸在連接墊的周圍，來允許連 接塾有-最大量的垂直和側向熱和/或機械移動，同時仍提 供空氣介質所有的低電容。此最少組接觸提供彈性給連接 、’、CT 5處，其可降低破壞性的機械應力在一銲錫連接上。 製造上述的氣墊可使用以下步驟：：^在…基板内產生一 不規則形凹洞具有少數周圍墊支撐且大於所要的連接墊； 2)以可溶基材料如單體材料、多體材料、和彈性體材料填 入凹洞；3)在固化可溶基材料之後，沉積一金屬墊層到可 溶基層上並覆蓋住周圍墊支撐；以及4)溶解與移除可溶基 層，在金屬墊層下留下一氣縫，金屬墊層由周圍墊支撐^ 所支持並與周圍墊支撐部形成電性的接觸。 圖2a和2b表示在沉積一覆蓋金屬連接墊13〇之前和之後 氣墊凹洞120的上平面視圖。 圖2a表示氣墊凹洞120形成在介電層11〇内的上平面視圖 。凹洞120有充分的深度以便在所有環境和機械條件下，後續 覆蓋金屬塾（圖2b的130)的屈曲不會碰到凹洞12〇的底部。凹 (6) (6)567599
洞120的形狀是使得介電層突出對U2可較佳地提供 支撐給以下步驟沉積的金屬連接墊（圖孔的13〇)。需要注意 的是一最少需要二個這樣相對的支撐112，雖然大部分的運 用最好有3或4個此類支撐112。針對在焊接期間需要最大垂 直移動彈性的運用，只有運用到二個支撐，因此允許金屬 連接塾在外部連接裝置，亦即錫球，在焊接期間有“搖晃” 的性能。另一具體實施例可運用導線當作外部連接裝置， 俾提供額外的連接彈性和可#度，同時仍然具有wLp技術 之尺寸和空間的優勢。 圖2 b表示在沉積或置放金屬連接墊丨3 〇到圖2 &中氣墊凹 洞120上後的一氣墊結構1〇〇。從圖以和礼的上平面視圖可 看得出，氣墊凹洞120最好大於金屬連接墊13〇，除了在支 撐/連接點對112外，以便部分的金屬連接墊13〇沒有接觸到 支撐/連接點112懸浮在空中，並具有一限制自由度的垂直 矛夕動到其下的氣縫中。過大的凹洞^^^也在凹洞Η。邊緣和 墊130邊緣之間提供一暴露區，其中可運用溶解劑且暫時可 溶基材料可被移除。對於金屬連接墊13〇其提供電訊連接， 電路圖案140形成在介電層上並連接到金屬連接墊 130的一個或更多的支撐/連接點n2。因此，導線圖案14〇 在金屬連接墊13〇和晶片積體電路之間作直接的電氣連接 。在導線圖案140和墊130之間的金屬連接之總接觸面積必 屑等於導線圖案140斷面的載電流。這顯示在點142有加寬 的V線圖案140。墊1 30的較佳形狀通常是橢圓形或矩形具 有一長軸其最好朝向WLP的中心。 -10- 567599
圖3a表示沿著圖2a和圖2b的線A-A，所取的剖面視圖，且 3 b疋/σ耆圖2 a和圖2 b的線B - B ’所取的剖面視圖。一起參照 圖3a和3b，為了保護晶片的積體電路免於在以氧化矽、氮 化矽、氧氮化矽等覆蓋晶片的保護層12和使用在導線和連 接圖案如銀（Ag)或銅（Cu)的金屬間的熱膨脹係數差異，並 免於機械傷害，因第一介電層11〇插入其中。第一介電層ιι〇 作為一應力緩衝區並增進電訊反應特性。第一介電層丨1〇最 好u括令亞胺材料（介電常數·· 2.8)具有一約2微米到5〇 微米的厚度。_ 在第一介電層110上形成金屬連接墊13〇和導線圖案（圖 2_4〇)最好包括一金屬例如銀(Ag)或銅(cu)。金屬連接墊 130可使用傳統的賤鑛、蒸錄、電錢、無電解電鍵法、或這 些方法的組合來形成。一種子金屬層132在形成金屬連接墊 13〇前可預先形成。導線圖案的厚度最好厚過傳統 金屬的厚度，亦即將進15_到5〇_。 復蓋^線圖案’-第：介電層16()最好由具有約2㈣到約 ΓμΐΏ的聚亞胺材料構成。第二介電層⑽提供側向機械保 4給錫球40 ’因此保護錫球4〇免於接合破壞與降低對晶片 的：在機械傷害而不是改善電氣特性。第二介電層160的材 料取好V用上等的機械和化學特性以保護晶片免於 境應力。 • Ρ刀的連接墊130穿過第二介電層6〇暴露出來被以如 錄（N i)或金（a u)的金屬雷都p —、 羁4鍍或無電解電鍍，因此形成一防腐 蚀保護金屬層134。錫球40放在金屬連接塾13〇上。 -11- 567599
圖4a到4k表示根據本發明用以製造氣墊結構模範製程步 驟的剖面視圖。視圖的看法是從圖2&和沘所示的線b_b，。 雖然這些視圖沒有顯示在凹洞12〇邊緣和金屬連接墊13〇邊 緣之間的暴露區，透過它暫時支撐層被移除，如此一暴露 區被整合到本發明。 圖4a表示保護層12形成在包含很多IC晶片的晶圓上。保 護層12是以傳統的晶圓製造技術來製造。圖仆中，藉由冷 佈聚亞胺材料在保護層12上來形成第一介電層11〇，然後軟 烤、曝光和顯影。蝕刻之後形成氣墊凹洞12〇和支撐點（圖 2a中的112)，最後硬烤第一介電層丨1〇。 如圖4c所示，一 B-stage-able高分子122最好藉由旋轉塗 佈法來形成。然後’如圖牝所示，使用回蝕法或化學機： 研磨法來平坦化B-stage-able高分子122以提供一均勻的表 面。然後賤鍍一種子金屬層132以產生如圖4e所示的平台: 在印上一光阻150到種子金屬層132上以後，光阻15〇被圖案 化如圖4f所示。 如圖4f所示，金屬被電鍍在種子金屬層132的暴露區上 且光阻150被移除，從而形成金屬連接墊13〇如圖&所示 。如圖4h所示，在連接墊13〇周圍外的一部份種子金屬層 132被蝕刻移除來產生只有連接墊13〇在平坦表面上如^ 4h所示。 參照圖4i ’最好以濕蝕刻化學劑將高分子^ 22 溶解透過前述在凹洞12〇邊緣和金屬連接墊i3〇邊緣之間的 暴露區將其從氣墊凹洞120中移除。然後，如圖例示，為 -12- (9) (9)567599
了側向的支撐金屬連接塾130’形成第二介電層i6〇。然後 電鍍上抗腐㈣護金屬層在金屬連㈣nG的暴露區上，例 如鎖（Ni)或金（Au)19，最好使用無電解電鑛法。最後，如圖 4k所示’形成或放上錫球4〇並保持_附著裝置在金屬連接 墊130上。 雖然本發明最好使用B_stage_aMe高分子作為可分解材 料在連接墊130之下’其他材料如矽甲完等可取代 B-stage-able南分子。 ，本發明提供，具有氣塾結構的WLP，其令有圖案的氣缝 形成在金屬連接墊130之下，從而增進WLp的可靠度和電氣 特性。 圖h表示根據本發明第二具體實施例的一氣塾結構2〇〇 。在此具體實施例中，-大體橢圓形的連接塾230有二個金 屬突出236延伸到第—介電層11〇的二個介電支撑上。圖^ 表示根據本發明第三具體實施例的一氣墊結構3〇〇,其中金 屬連接塾330有一大體圓形而不是圖2b中所示的矩形連接. 〇矛圖5a中的230。連接墊230或330的金屬突出236提供 支撐給連接塾23G或33G浮在氣墊凹洞12〇上，但是沒有直接 支樓著錫球。 么月的車又佳具體實施例已揭露於此，雖有運用特殊 員人，他們只是用在一般和描述性觀念而不是為了限制的 目=ο此藝一般技術者因此將了解在不脫離本發明如以下 申。月專利轨圍的精神和範圍下可進行不同型式和細節的變 -13- ^07599
(ίο) =貫穿全文同樣的參照符號代表同樣的結構元件。 表不—傳統銲錫連接結構的剖面視圖’· ::表示圖la所示傳統錫球結構在不同熱循環階段 和作用在、表桩沾 刀別疋加熱和冷卻，顯示垂直移動 連接、、、口構的力量導致膨脹和縮收；
面=表不根據本發明一較佳具體實施例氣墊凹洞的上平 塾=:連接塾—上之後的氣 圖3a表不著圖2a和圖2b的線A)，所取的剖面視圖； 圖3b表示沿著圖2a和圖以的線b_b，所取的剖面視圖； 圖4a到4k表tf根據本發明—較佳具體實施 構之代表性步驟的剖面視圖； 乳蟄… 圖5a表示根據本發明之第二具體實施例氣墊結構的上平 面視圖；及
圖5b表示根據本發明之第三具體實施例氣墊結構的上平 面視圖； 圖式代表符號說明 10 晶片 12 保護層 20 連接墊 30 接合處 32 裂縫 -14- 567599 ⑼ 40 錫球 50 印刷電路板 100, 200, 300 氣墊結構 110 第一介電層 112 突出對 120 氣墊凹洞 122 B-stage-able聚合物 130 金屬連接墊 132 - 種子金屬層 134 保護金屬層 140 導線圖案 142 較寬的導線圖案 150 光阻 160 第二介電層 230 橢圓形金屬連接墊 236 金屬突出 330 圓形金屬連接墊
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Claims (1)

  1. 、申請專利範圍 —種用來在晶®層級封裝巾提供彈性連接的結構，其勺 ^-金屬連接塾覆蓋-氣穴，其中該氣穴至少__部分2 向延伸超過金屬連接墊。 如申請專利範圍第W之結構，其中氣穴包括—具有供人 屬連接墊用之多數個周圍支撐結構的幾何結構。盃 如申請專利範圍第2項之結構，其中至少— 也支撐-電性連接到金屬連接塾之配線圖案。“構 ，申請專利範圍第旧之結構，更包括—介電層來界定此 氣穴。 … 如申請專利範圍第4項之結構’其中介電層包括突出對， 以針對金屬連接墊來提供支撐部。 如申請專利範圍第5項之結構，其中至少一突出對亦支撐 一電性連接到金屬連接墊之配線圖案。 如申請專利範圍第4項之結構，更包括一第二介電層，藉 以使金屬連接墊之—部分可穿過此第二介電層而暴露出 來。 一、 如申請專利範圍第7項之結構，更包括-保護金屬層形成 在金屬連接墊暴露的部位上。 曰 一種在晶圓層級封裝中提供彈性連接之結構的製造方法 ，包括以下的步驟： …彳 A.在半導體基板上形成一氣穴； B •以可移除材料填入氣穴； C ·在可移除材料上形成一金屬層； 567599
    ------ , a水取成一金屬連接墊，藉此使氣穴的 至少一部分側向延伸超過金屬連接墊； Ε·從氣穴中移除可移除材料；以及 F.在金屬連接墊上形成一互連材料。 1〇.t申請專利範圍第9項之方法，其中在形成金屬層前將可 移除材料平坦化。 11.如申請專利範圍第丨〇項 # 鈾制立々 貝之方法，其中平坦化是藉由一回 蝕衣釭或一 CMP製程來執行。 !2·如申請專利範圍第9項 單俨姑、之方法，其中可移除材料是選自由 早體材枓、多體材料、和 13 φ ^ ^ 5早11體材枓組成之群的材料。 如申凊專利範圍第9項 “We材料。之方法，其中可移除材料是-Μ·如申請專利範圍第9項之 雷届4姑Μ 古其中乳穴是藉由沉積一介 電層和然後圖案化這個介電層而形成。 積" •如申請專利範圍第丨4項之 濕姓刻化學劑來溶解移除。…中可移除材料可藉由 1 6·如申請專利範圍第9項之方、 後，沉積一介電層在金屬連_ 形成金屬連接塾之 -部分穿過此介電層而暴露出來f ’以使金屬連接墊的 17·如申請專利範圍第9項之方 18後二積一保護層在金屬連接塾上中在形成金屬連接塾之 •如申凊專利範圍第17項之方 ^ 來進行保護層的沉積。 /、藉由無電解電鍍法 19·如申請專利範圍第18項之方法，其中使用八 甲使用一金屬來形成 567599
    保護層。 2 0.如申請專利範圍第1 9項之方法，其中金屬選自由金和鎳 組成之群。
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DE10301432A1 (de) 2003-08-28
US20030153171A1 (en) 2003-08-14
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DE10301432B4 (de) 2007-10-18

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