TW557568B - Semiconductor integrated circuit device and method of manufacturing the same - Google Patents
Semiconductor integrated circuit device and method of manufacturing the same Download PDFInfo
- Publication number
- TW557568B TW557568B TW089111653A TW89111653A TW557568B TW 557568 B TW557568 B TW 557568B TW 089111653 A TW089111653 A TW 089111653A TW 89111653 A TW89111653 A TW 89111653A TW 557568 B TW557568 B TW 557568B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- silicon film
- silicon
- manufacturing
- heat treatment
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000012535 impurity Substances 0.000 claims abstract description 136
- 239000003990 capacitor Substances 0.000 claims abstract description 74
- 238000007788 roughening Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 240
- 229910052710 silicon Inorganic materials 0.000 claims description 194
- 239000010703 silicon Substances 0.000 claims description 194
- 238000000034 method Methods 0.000 claims description 130
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 88
- 238000010438 heat treatment Methods 0.000 claims description 83
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 71
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 71
- 239000007789 gas Substances 0.000 claims description 69
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 67
- 229910052698 phosphorus Inorganic materials 0.000 claims description 66
- 239000011574 phosphorus Substances 0.000 claims description 66
- 230000008569 process Effects 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 60
- 238000011049 filling Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 55
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 53
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 25
- 230000002079 cooperative effect Effects 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 73
- 238000009792 diffusion process Methods 0.000 abstract description 18
- 239000012808 vapor phase Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 655
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 86
- 229910052814 silicon oxide Inorganic materials 0.000 description 78
- 239000010410 layer Substances 0.000 description 43
- 239000013078 crystal Substances 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 230000002093 peripheral effect Effects 0.000 description 32
- 230000015572 biosynthetic process Effects 0.000 description 30
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 239000012071 phase Substances 0.000 description 21
- 229910021332 silicide Inorganic materials 0.000 description 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 20
- 230000000694 effects Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 150000003376 silicon Chemical class 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 11
- 230000001590 oxidative effect Effects 0.000 description 11
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 11
- 239000004576 sand Substances 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 230000004913 activation Effects 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000007812 deficiency Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229960002050 hydrofluoric acid Drugs 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- -1 sand nitride Chemical class 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11192009A JP2001024165A (ja) | 1999-07-06 | 1999-07-06 | 半導体装置およびその製造方法ならびに半導体製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW557568B true TW557568B (en) | 2003-10-11 |
Family
ID=16284096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089111653A TW557568B (en) | 1999-07-06 | 2000-06-14 | Semiconductor integrated circuit device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6632721B1 (enExample) |
| JP (1) | JP2001024165A (enExample) |
| KR (1) | KR20010029868A (enExample) |
| TW (1) | TW557568B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037172A (ja) * | 2001-07-23 | 2003-02-07 | Niigata Seimitsu Kk | アナログ・デジタル混載集積回路 |
| KR100399940B1 (ko) * | 2001-12-29 | 2003-09-29 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 캐패시터 제조방법 |
| US7189606B2 (en) * | 2002-06-05 | 2007-03-13 | Micron Technology, Inc. | Method of forming fully-depleted (FD) SOI MOSFET access transistor |
| KR100520600B1 (ko) * | 2003-02-17 | 2005-10-10 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
| KR100681274B1 (ko) * | 2004-11-25 | 2007-02-09 | 삼성전자주식회사 | 커패시터 및 그 제조 방법 |
| JP2006324363A (ja) * | 2005-05-17 | 2006-11-30 | Elpida Memory Inc | キャパシタおよびその製造方法 |
| US8189376B2 (en) * | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
| CN102222606B (zh) * | 2010-04-14 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种电容的形成方法 |
| US8642440B2 (en) | 2011-10-24 | 2014-02-04 | International Business Machines Corporation | Capacitor with deep trench ion implantation |
| EP2809823A1 (en) * | 2012-01-30 | 2014-12-10 | First Solar, Inc | Method and apparatus for producing a transparent conductive oxide |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11150249A (ja) * | 1997-11-16 | 1999-06-02 | Anelva Corp | 凹凸状ポリシリコン層の形成方法及びこの方法の実施に使用される基板処理装置並びに半導体メモリデバイス |
| JPH06314774A (ja) | 1993-04-28 | 1994-11-08 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0786434A (ja) | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR0168770B1 (ko) * | 1994-11-24 | 1999-01-15 | 김주용 | 조대한 입자구조의 폴리실리콘 박막을 갖는 반도체 소자 제조 방법 |
| US5639685A (en) * | 1995-10-06 | 1997-06-17 | Micron Technology, Inc. | Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon |
| US6069053A (en) * | 1997-02-28 | 2000-05-30 | Micron Technology, Inc. | Formation of conductive rugged silicon |
| US6197653B1 (en) * | 1997-03-27 | 2001-03-06 | Texas Instruments Incorporated | Capacitor and memory structure and method |
| US6218260B1 (en) * | 1997-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
| JPH1140763A (ja) * | 1997-07-15 | 1999-02-12 | Nec Corp | 半導体装置の製造方法 |
| KR100486215B1 (ko) * | 1997-10-22 | 2006-04-28 | 삼성전자주식회사 | 미세한굴곡이형성된하부전극을구비한반도체장치의커패시터제조방법 |
| JP3542704B2 (ja) * | 1997-10-24 | 2004-07-14 | シャープ株式会社 | 半導体メモリ素子 |
| JP2000012783A (ja) * | 1998-06-22 | 2000-01-14 | Nippon Asm Kk | 半導体素子の製造方法 |
| US5913119A (en) * | 1998-06-26 | 1999-06-15 | Vanguard Int Semiconduct Corp | Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure |
| US6177696B1 (en) * | 1998-08-13 | 2001-01-23 | International Business Machines Corporation | Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices |
| JP3242901B2 (ja) * | 1999-06-18 | 2001-12-25 | 日本エー・エス・エム株式会社 | 半導体形成方法及び装置 |
-
1999
- 1999-07-06 JP JP11192009A patent/JP2001024165A/ja active Pending
-
2000
- 2000-06-14 TW TW089111653A patent/TW557568B/zh active
- 2000-06-23 US US09/602,887 patent/US6632721B1/en not_active Expired - Fee Related
- 2000-06-30 KR KR1020000036702A patent/KR20010029868A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001024165A (ja) | 2001-01-26 |
| KR20010029868A (ko) | 2001-04-16 |
| US6632721B1 (en) | 2003-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |