JP2001024165A - 半導体装置およびその製造方法ならびに半導体製造装置 - Google Patents

半導体装置およびその製造方法ならびに半導体製造装置

Info

Publication number
JP2001024165A
JP2001024165A JP11192009A JP19200999A JP2001024165A JP 2001024165 A JP2001024165 A JP 2001024165A JP 11192009 A JP11192009 A JP 11192009A JP 19200999 A JP19200999 A JP 19200999A JP 2001024165 A JP2001024165 A JP 2001024165A
Authority
JP
Japan
Prior art keywords
film
silicon film
manufacturing
silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11192009A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001024165A5 (enExample
Inventor
Shinpei Iijima
晋平 飯島
Tomoshi Yamamoto
智志 山本
Atsushi Kuroda
淳 黒田
Hiroshi Miki
浩史 三木
Yoshihisa Fujisaki
芳久 藤崎
Masayoshi Yoshida
正義 吉田
Kenichi Yamaguchi
賢一 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP11192009A priority Critical patent/JP2001024165A/ja
Priority to TW089111653A priority patent/TW557568B/zh
Priority to US09/602,887 priority patent/US6632721B1/en
Priority to KR1020000036702A priority patent/KR20010029868A/ko
Publication of JP2001024165A publication Critical patent/JP2001024165A/ja
Publication of JP2001024165A5 publication Critical patent/JP2001024165A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11192009A 1999-07-06 1999-07-06 半導体装置およびその製造方法ならびに半導体製造装置 Pending JP2001024165A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11192009A JP2001024165A (ja) 1999-07-06 1999-07-06 半導体装置およびその製造方法ならびに半導体製造装置
TW089111653A TW557568B (en) 1999-07-06 2000-06-14 Semiconductor integrated circuit device and method of manufacturing the same
US09/602,887 US6632721B1 (en) 1999-07-06 2000-06-23 Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
KR1020000036702A KR20010029868A (ko) 1999-07-06 2000-06-30 반도체 집적회로장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11192009A JP2001024165A (ja) 1999-07-06 1999-07-06 半導体装置およびその製造方法ならびに半導体製造装置

Publications (2)

Publication Number Publication Date
JP2001024165A true JP2001024165A (ja) 2001-01-26
JP2001024165A5 JP2001024165A5 (enExample) 2004-10-14

Family

ID=16284096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11192009A Pending JP2001024165A (ja) 1999-07-06 1999-07-06 半導体装置およびその製造方法ならびに半導体製造装置

Country Status (4)

Country Link
US (1) US6632721B1 (enExample)
JP (1) JP2001024165A (enExample)
KR (1) KR20010029868A (enExample)
TW (1) TW557568B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037172A (ja) * 2001-07-23 2003-02-07 Niigata Seimitsu Kk アナログ・デジタル混載集積回路
KR100399940B1 (ko) * 2001-12-29 2003-09-29 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
JP2004253784A (ja) * 2003-02-17 2004-09-09 Hynix Semiconductor Inc 半導体素子のキャパシタ製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7189606B2 (en) * 2002-06-05 2007-03-13 Micron Technology, Inc. Method of forming fully-depleted (FD) SOI MOSFET access transistor
KR100681274B1 (ko) * 2004-11-25 2007-02-09 삼성전자주식회사 커패시터 및 그 제조 방법
JP2006324363A (ja) * 2005-05-17 2006-11-30 Elpida Memory Inc キャパシタおよびその製造方法
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
CN102222606B (zh) * 2010-04-14 2014-06-04 中芯国际集成电路制造(上海)有限公司 一种电容的形成方法
US8642440B2 (en) 2011-10-24 2014-02-04 International Business Machines Corporation Capacitor with deep trench ion implantation
EP2809823A1 (en) * 2012-01-30 2014-12-10 First Solar, Inc Method and apparatus for producing a transparent conductive oxide

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150249A (ja) * 1997-11-16 1999-06-02 Anelva Corp 凹凸状ポリシリコン層の形成方法及びこの方法の実施に使用される基板処理装置並びに半導体メモリデバイス
JPH06314774A (ja) 1993-04-28 1994-11-08 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH0786434A (ja) 1993-09-17 1995-03-31 Oki Electric Ind Co Ltd 半導体装置の製造方法
KR0168770B1 (ko) * 1994-11-24 1999-01-15 김주용 조대한 입자구조의 폴리실리콘 박막을 갖는 반도체 소자 제조 방법
US5639685A (en) * 1995-10-06 1997-06-17 Micron Technology, Inc. Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon
US6069053A (en) * 1997-02-28 2000-05-30 Micron Technology, Inc. Formation of conductive rugged silicon
US6197653B1 (en) * 1997-03-27 2001-03-06 Texas Instruments Incorporated Capacitor and memory structure and method
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1140763A (ja) * 1997-07-15 1999-02-12 Nec Corp 半導体装置の製造方法
KR100486215B1 (ko) * 1997-10-22 2006-04-28 삼성전자주식회사 미세한굴곡이형성된하부전극을구비한반도체장치의커패시터제조방법
JP3542704B2 (ja) * 1997-10-24 2004-07-14 シャープ株式会社 半導体メモリ素子
JP2000012783A (ja) * 1998-06-22 2000-01-14 Nippon Asm Kk 半導体素子の製造方法
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure
US6177696B1 (en) * 1998-08-13 2001-01-23 International Business Machines Corporation Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices
JP3242901B2 (ja) * 1999-06-18 2001-12-25 日本エー・エス・エム株式会社 半導体形成方法及び装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037172A (ja) * 2001-07-23 2003-02-07 Niigata Seimitsu Kk アナログ・デジタル混載集積回路
KR100399940B1 (ko) * 2001-12-29 2003-09-29 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
JP2004253784A (ja) * 2003-02-17 2004-09-09 Hynix Semiconductor Inc 半導体素子のキャパシタ製造方法

Also Published As

Publication number Publication date
KR20010029868A (ko) 2001-04-16
TW557568B (en) 2003-10-11
US6632721B1 (en) 2003-10-14

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