TW556334B - Semiconductor device and fabrication method thereof - Google Patents

Semiconductor device and fabrication method thereof Download PDF

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Publication number
TW556334B
TW556334B TW091114308A TW91114308A TW556334B TW 556334 B TW556334 B TW 556334B TW 091114308 A TW091114308 A TW 091114308A TW 91114308 A TW91114308 A TW 91114308A TW 556334 B TW556334 B TW 556334B
Authority
TW
Taiwan
Prior art keywords
conductive layer
electrode
peripheral circuit
memory cell
semiconductor
Prior art date
Application number
TW091114308A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Araki
Satoshi Shimizu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW556334B publication Critical patent/TW556334B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10W20/092—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW091114308A 2001-12-14 2002-06-28 Semiconductor device and fabrication method thereof TW556334B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001381095A JP2003188286A (ja) 2001-12-14 2001-12-14 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW556334B true TW556334B (en) 2003-10-01

Family

ID=19187290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091114308A TW556334B (en) 2001-12-14 2002-06-28 Semiconductor device and fabrication method thereof

Country Status (4)

Country Link
US (1) US6621117B2 (enExample)
JP (1) JP2003188286A (enExample)
KR (1) KR20030051182A (enExample)
TW (1) TW556334B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448911B1 (ko) * 2002-09-04 2004-09-16 삼성전자주식회사 더미 패턴을 갖는 비휘발성 기억소자
US7354464B2 (en) * 2004-12-17 2008-04-08 Texaco Inc. Apparatus and method for producing hydrogen
EP1863089A1 (en) * 2006-05-31 2007-12-05 STMicroelectronics S.r.l. Non-active electrically structures of integrated electronic circuit
EP2648220B1 (en) * 2006-06-30 2017-11-08 Fujitsu Semiconductor Limited Floating gate memory device with trench isolation and method for manufacturing thereof
KR101361828B1 (ko) * 2007-09-03 2014-02-12 삼성전자주식회사 반도체 디바이스, 반도체 패키지, 스택 모듈, 카드, 시스템및 반도체 디바이스의 제조 방법
JP4649487B2 (ja) 2008-03-17 2011-03-09 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5364336B2 (ja) * 2008-11-04 2013-12-11 株式会社東芝 半導体記憶装置
KR101804420B1 (ko) 2010-06-14 2018-01-11 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2014056989A (ja) 2012-09-13 2014-03-27 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229178A (ja) 1997-02-13 1998-08-25 Mitsubishi Electric Corp 半導体装置の製造方法
JP3586072B2 (ja) * 1997-07-10 2004-11-10 株式会社東芝 不揮発性半導体記憶装置
JP4427108B2 (ja) * 1998-03-27 2010-03-03 株式会社東芝 半導体装置及びその製造方法
JP3773728B2 (ja) 1999-01-26 2006-05-10 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
KR20020082667A (ko) * 2001-04-25 2002-10-31 삼성전자 주식회사 더미패턴을 이용한 평탄화방법

Also Published As

Publication number Publication date
KR20030051182A (ko) 2003-06-25
JP2003188286A (ja) 2003-07-04
US6621117B2 (en) 2003-09-16
US20030111671A1 (en) 2003-06-19

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