TW556237B - Ceramic capacitor - Google Patents
Ceramic capacitor Download PDFInfo
- Publication number
- TW556237B TW556237B TW091120905A TW91120905A TW556237B TW 556237 B TW556237 B TW 556237B TW 091120905 A TW091120905 A TW 091120905A TW 91120905 A TW91120905 A TW 91120905A TW 556237 B TW556237 B TW 556237B
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- Taiwan
- Prior art keywords
- ceramic capacitor
- patent application
- ceramic
- dielectric
- scope
- Prior art date
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 92
- 239000000919 ceramic Substances 0.000 claims abstract description 66
- 239000000203 mixture Substances 0.000 claims abstract description 55
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910002971 CaTiO3 Inorganic materials 0.000 abstract 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 40
- 238000000034 method Methods 0.000 description 37
- 238000011049 filling Methods 0.000 description 30
- 238000010304 firing Methods 0.000 description 30
- 239000000843 powder Substances 0.000 description 26
- 239000000654 additive Substances 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 21
- 239000011701 zinc Substances 0.000 description 21
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052681 coesite Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 229910052906 cristobalite Inorganic materials 0.000 description 13
- 229910052682 stishovite Inorganic materials 0.000 description 13
- 229910052905 tridymite Inorganic materials 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 11
- 229910003781 PbTiO3 Inorganic materials 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 9
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000009966 trimming Methods 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- -1 2Ce02 Inorganic materials 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002075 main ingredient Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004814 ceramic processing Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- JVKRKMWZYMKVTQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JVKRKMWZYMKVTQ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000013028 medium composition Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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- B32B2311/24—Aluminium
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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| JP2001362220A JP2003163132A (ja) | 2001-11-28 | 2001-11-28 | 磁器コンデンサ |
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| CN (1) | CN1409334A (ko) |
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| JP4785107B2 (ja) * | 2003-07-24 | 2011-10-05 | 株式会社村田製作所 | 誘電体磁器組成物およびセラミック電子部品 |
| US7091542B1 (en) * | 2005-01-28 | 2006-08-15 | International Business Machines Corporation | Method of forming a MIM capacitor for Cu BEOL application |
| CN101341558B (zh) * | 2006-07-03 | 2011-01-12 | 株式会社村田制作所 | 带可变阻功能的层叠型半导体陶瓷电容器及其制造方法 |
| DE102006058538A1 (de) * | 2006-12-12 | 2008-06-19 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Zündvorrichtung für eine Hochdruckentladungslampe und Hochdruckentladungslampe mit Zündvorrichtung |
| JP5419406B2 (ja) * | 2008-09-18 | 2014-02-19 | 三菱重工業株式会社 | インバータ装置 |
| KR101018645B1 (ko) * | 2008-11-03 | 2011-03-03 | 삼화콘덴서공업주식회사 | 고압 및 고주파용 세라믹 커패시터 |
| JP5397341B2 (ja) | 2010-07-23 | 2014-01-22 | 株式会社村田製作所 | バリスタ機能付き積層型半導体セラミックコンデンサ |
| CN103288442B (zh) * | 2012-02-29 | 2016-12-14 | 深圳光启创新技术有限公司 | 一种陶瓷复合材料及其制备的超材料 |
| CN103288440A (zh) * | 2012-02-29 | 2013-09-11 | 深圳光启创新技术有限公司 | 一种陶瓷复合材料及其制备的超材料 |
| DE102014105493B3 (de) * | 2014-04-17 | 2015-09-24 | Schott Ag | Glaskeramikkondensator mit Kunststoffverkapselung, sowie Verfahren zu dessen Herstellung |
| US9576749B2 (en) * | 2014-08-22 | 2017-02-21 | Holy Stone Enterprise Co., Ltd. | Combination capacitor and strip material arrangement |
| CN104167290A (zh) * | 2014-08-28 | 2014-11-26 | 鞍山奇发电子陶瓷科技有限公司 | 一种凹形双电极积成芯片高压陶瓷电容器及制造工艺 |
| US10102973B2 (en) | 2014-09-12 | 2018-10-16 | Nanotek Instruments, Inc. | Graphene electrode based ceramic capacitor |
| CN105130427A (zh) * | 2015-08-04 | 2015-12-09 | 西安健信电力电子陶瓷有限责任公司 | 一种高耐压凹面陶瓷电容器及其制备方法 |
| CN106631005B (zh) * | 2017-01-10 | 2020-01-14 | 北京元六鸿远电子科技股份有限公司 | 中温烧结的无铅高压电容器介质瓷料及制备方法 |
| JP2019017231A (ja) * | 2017-07-11 | 2019-01-31 | Tdk株式会社 | 電子機器 |
| CN108439974A (zh) * | 2018-04-13 | 2018-08-24 | 电子科技大学 | 脉冲储能介质陶瓷材料及其制备方法 |
| CN109928748B (zh) * | 2019-04-18 | 2021-09-17 | 陕西科技大学 | 一种高温用高效率的La掺杂储能线性电介质陶瓷材料及其制备方法 |
| US11519086B2 (en) | 2019-05-02 | 2022-12-06 | King Fahd University Of Petroleum And Minerals | Fabrication of photoactive CaTiO3—TiO2 composite thin film electrodes via single step AACVD |
| CN110223842B (zh) * | 2019-07-10 | 2023-12-12 | 昆山万盛电子有限公司 | 一种适用于异型插件机的直脚型电容器及制造方法 |
| CN110950655B (zh) * | 2019-12-10 | 2022-04-22 | 电子科技大学 | Ca-Ti基高介微波陶瓷基板材料及制备方法和应用 |
| CN114477996B (zh) * | 2020-10-23 | 2023-04-28 | 中国科学院理化技术研究所 | 一种钛酸钡基陶瓷的制备方法 |
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| JPS61147404A (ja) * | 1984-12-18 | 1986-07-05 | 太陽誘電株式会社 | 誘電体磁器組成物 |
| DE3785506T2 (de) * | 1986-07-29 | 1993-08-12 | Tdk Corp | Halbleitende keramische zusammensetzung, sowie kondensator aus halbleitender keramik. |
| JPS63236785A (ja) | 1987-03-26 | 1988-10-03 | 松下電器産業株式会社 | セラミツク電子部品の電極形成方法 |
| JPH0670944B2 (ja) | 1988-11-02 | 1994-09-07 | ティーディーケイ株式会社 | 低損失磁器コンデンサ |
| EP0412167B1 (en) * | 1989-02-16 | 1995-12-20 | Matsushita Electric Industrial Co., Ltd. | Laminated type grain boundary insulated semiconductor ceramic capacitor and method of producing the same |
| US5268006A (en) * | 1989-03-15 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Ceramic capacitor with a grain boundary-insulated structure |
| US5208727A (en) * | 1989-03-22 | 1993-05-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure and a method for producing the same |
| JP3471444B2 (ja) * | 1994-11-01 | 2003-12-02 | 松下電器産業株式会社 | セラミックコンデンサの電極形成方法 |
| JPH08138972A (ja) * | 1994-11-11 | 1996-05-31 | Murata Mfg Co Ltd | 磁器コンデンサ |
| JP3031268B2 (ja) | 1996-11-20 | 2000-04-10 | 株式会社村田製作所 | 磁器コンデンサ |
-
2002
- 2002-09-12 TW TW091120905A patent/TW556237B/zh not_active IP Right Cessation
- 2002-09-13 KR KR1020020055555A patent/KR20030023558A/ko not_active Application Discontinuation
- 2002-09-16 US US10/244,106 patent/US6777109B2/en not_active Expired - Fee Related
- 2002-09-16 CN CN02143186A patent/CN1409334A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1409334A (zh) | 2003-04-09 |
| KR20030023558A (ko) | 2003-03-19 |
| US20030137797A1 (en) | 2003-07-24 |
| US6777109B2 (en) | 2004-08-17 |
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