TW554527B - GaN HBT superlattice base structure - Google Patents

GaN HBT superlattice base structure Download PDF

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Publication number
TW554527B
TW554527B TW091106733A TW91106733A TW554527B TW 554527 B TW554527 B TW 554527B TW 091106733 A TW091106733 A TW 091106733A TW 91106733 A TW91106733 A TW 91106733A TW 554527 B TW554527 B TW 554527B
Authority
TW
Taiwan
Prior art keywords
layer
base
collector
emitter
forming
Prior art date
Application number
TW091106733A
Other languages
English (en)
Chinese (zh)
Inventor
Michael Wojtowicz
Original Assignee
Trw Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trw Inc filed Critical Trw Inc
Application granted granted Critical
Publication of TW554527B publication Critical patent/TW554527B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
TW091106733A 2001-04-12 2002-04-03 GaN HBT superlattice base structure TW554527B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/833,372 US20020149033A1 (en) 2001-04-12 2001-04-12 GaN HBT superlattice base structure

Publications (1)

Publication Number Publication Date
TW554527B true TW554527B (en) 2003-09-21

Family

ID=25264248

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106733A TW554527B (en) 2001-04-12 2002-04-03 GaN HBT superlattice base structure

Country Status (4)

Country Link
US (1) US20020149033A1 (cg-RX-API-DMAC7.html)
EP (1) EP1249872A3 (cg-RX-API-DMAC7.html)
JP (1) JP2002368005A (cg-RX-API-DMAC7.html)
TW (1) TW554527B (cg-RX-API-DMAC7.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3645233B2 (ja) * 2001-06-07 2005-05-11 日本電信電話株式会社 半導体素子
US6784450B2 (en) * 2001-07-20 2004-08-31 Microlink Devices, Inc. Graded base GaAsSb for high speed GaAs HBT
JP3853341B2 (ja) * 2003-11-28 2006-12-06 シャープ株式会社 バイポーラトランジスタ
KR100640661B1 (ko) * 2005-08-05 2006-11-01 삼성전자주식회사 ｐ형 광대역 밴드 갭 화합물 반도체층에의 저저항 접촉콘택을 가지는 반도체 소자 및 제조 방법
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
TWI293811B (en) * 2005-11-22 2008-02-21 Univ Nat Central Gan heterojunction bipolar transistor with a p-type strained ingan layer and method of fabrication therefore
JP2007258258A (ja) * 2006-03-20 2007-10-04 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子ならびにその構造および作製方法
KR100891799B1 (ko) * 2007-02-06 2009-04-07 삼성전기주식회사 교류전원용 발광소자
GB2487531A (en) * 2011-01-20 2012-08-01 Sharp Kk Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate.
JP6170300B2 (ja) * 2013-01-08 2017-07-26 住友化学株式会社 窒化物半導体デバイス
CN106537617B (zh) 2014-05-27 2019-04-16 斯兰纳Uv科技有限公司 使用半导体结构和超晶格的高级电子装置结构
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
CN106663718B (zh) 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 光电装置
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
US11862717B2 (en) * 2021-08-24 2024-01-02 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with superlattice layer and method to form same
CN113809156B (zh) * 2021-09-07 2024-07-23 西安瑞芯光通信息科技有限公司 一种化合物半导体材料的hbt外延结构及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Also Published As

Publication number Publication date
US20020149033A1 (en) 2002-10-17
JP2002368005A (ja) 2002-12-20
EP1249872A3 (en) 2003-12-17
EP1249872A2 (en) 2002-10-16

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