TW550978B - Plasma processor method and apparatus - Google Patents
Plasma processor method and apparatus Download PDFInfo
- Publication number
- TW550978B TW550978B TW091111268A TW91111268A TW550978B TW 550978 B TW550978 B TW 550978B TW 091111268 A TW091111268 A TW 091111268A TW 91111268 A TW91111268 A TW 91111268A TW 550978 B TW550978 B TW 550978B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- electrode
- radio frequency
- variable
- ground wire
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000012545 processing Methods 0.000 claims abstract description 19
- 239000000523 sample Substances 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000004044 response Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 3
- DTTPWCNKTMQMTE-TYNNPWLESA-N [(1R,2S,3S,4S,5R,6S,8R,12S,13S,16R,19S,20R,21S)-14-ethyl-2-hydroxy-4,6,19-trimethoxy-16-methyl-9,11-dioxa-14-azaheptacyclo[10.7.2.12,5.01,13.03,8.08,12.016,20]docosan-21-yl] acetate Chemical compound CCN1C[C@]2(C)CC[C@H](OC)[C@]34[C@@H]2[C@H](OC(C)=O)[C@@]2(OCO[C@@]22C[C@H](OC)[C@H]5C[C@]3(O)[C@@H]2[C@H]5OC)[C@@H]14 DTTPWCNKTMQMTE-TYNNPWLESA-N 0.000 claims 1
- DTTPWCNKTMQMTE-UHFFFAOYSA-N delphelatine Natural products O1COC2(C3C4OC)CC(OC)C4CC3(O)C34C(OC)CCC5(C)CN(CC)C4C21C(OC(C)=O)C53 DTTPWCNKTMQMTE-UHFFFAOYSA-N 0.000 claims 1
- WNIGHBYIOLQQSJ-UHFFFAOYSA-N deltaline Natural products CCN1CC2(COC)CCC(O)C34C2C(OC(=O)C)C5(OCOC56CC(OC)C7CC3(O)C6C7O)C14 WNIGHBYIOLQQSJ-UHFFFAOYSA-N 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000002372 labelling Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000010076 replication Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- -1 dielectric Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29683201P | 2001-06-07 | 2001-06-07 | |
| US10/028,312 US6677711B2 (en) | 2001-06-07 | 2001-12-28 | Plasma processor method and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW550978B true TW550978B (en) | 2003-09-01 |
Family
ID=26703540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091111268A TW550978B (en) | 2001-06-07 | 2002-05-28 | Plasma processor method and apparatus |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6677711B2 (enExample) |
| JP (1) | JP4897195B2 (enExample) |
| KR (1) | KR101048635B1 (enExample) |
| CN (1) | CN1515018B (enExample) |
| TW (1) | TW550978B (enExample) |
| WO (1) | WO2002101784A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8518211B2 (en) | 2002-12-20 | 2013-08-27 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
Families Citing this family (69)
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| US20110104381A1 (en) * | 2004-01-15 | 2011-05-05 | Stefan Laure | Plasma Treatment of Large-Scale Components |
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| EP1872637B1 (de) * | 2005-04-11 | 2014-05-07 | Dr. Laure Plasmatechnologie Gmbh | Vorrichtung und verfahren zur plasmabeschichtung |
| JP5116667B2 (ja) * | 2005-06-10 | 2013-01-09 | バード テクノロジーズ グループ インク． | 半導体プラズマ発生システムにおける電力潮流を解析するシステムと方法 |
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| CN101478857A (zh) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理装置 |
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| US8002945B2 (en) * | 2008-05-29 | 2011-08-23 | Applied Materials, Inc. | Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
| US20090294275A1 (en) * | 2008-05-29 | 2009-12-03 | Applied Materials, Inc. | Method of plasma load impedance tuning by modulation of a source power or bias power rf generator |
| US8018164B2 (en) * | 2008-05-29 | 2011-09-13 | Applied Materials, Inc. | Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources |
| US8337661B2 (en) * | 2008-05-29 | 2012-12-25 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
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| US8674844B2 (en) * | 2009-03-19 | 2014-03-18 | Applied Materials, Inc. | Detecting plasma chamber malfunction |
| US9275838B2 (en) * | 2009-09-02 | 2016-03-01 | Lam Research Corporation | Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof |
| US20110209995A1 (en) * | 2010-03-01 | 2011-09-01 | Applied Materials, Inc. | Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit |
| US20120000888A1 (en) * | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Methods and apparatus for radio frequency (rf) plasma processing |
| KR101151419B1 (ko) | 2010-07-30 | 2012-06-01 | 주식회사 플라즈마트 | Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법 |
| KR101251930B1 (ko) * | 2011-06-03 | 2013-04-08 | (주)스마텍 | 필드 강화 유도 결합 플라즈마 처리 장치 및 플라즈마 형성 방법 |
| US9161428B2 (en) | 2012-04-26 | 2015-10-13 | Applied Materials, Inc. | Independent control of RF phases of separate coils of an inductively coupled plasma reactor |
| US20130284369A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Two-phase operation of plasma chamber by phase locked loop |
| US9620334B2 (en) * | 2012-12-17 | 2017-04-11 | Lam Research Corporation | Control of etch rate using modeling, feedback and impedance match |
| JP6078419B2 (ja) * | 2013-02-12 | 2017-02-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置 |
| US9312106B2 (en) * | 2013-03-13 | 2016-04-12 | Applied Materials, Inc. | Digital phase controller for two-phase operation of a plasma reactor |
| US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
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| US11335540B2 (en) | 2015-06-29 | 2022-05-17 | Reno Technologies, Inc. | Impedance matching network and method |
| US9876476B2 (en) * | 2015-08-18 | 2018-01-23 | Mks Instruments, Inc. | Supervisory control of radio frequency (RF) impedance tuning operation |
| US10187032B2 (en) * | 2016-06-17 | 2019-01-22 | Lam Research Corporation | Combiner and distributor for adjusting impedances or power across multiple plasma processing stations |
| CN106856644A (zh) * | 2017-01-04 | 2017-06-16 | 京东方科技集团股份有限公司 | 等离子体射流装置 |
| WO2018151920A1 (en) * | 2017-02-16 | 2018-08-23 | Applied Materials, Inc. | Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same |
| US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
| US12272522B2 (en) | 2017-07-10 | 2025-04-08 | Asm America, Inc. | Resonant filter for solid state RF impedance matching network |
| US12334307B2 (en) | 2017-07-10 | 2025-06-17 | Asm Ip Holding B.V. | Power control for rf impedance matching network |
| US11398370B2 (en) | 2017-07-10 | 2022-07-26 | Reno Technologies, Inc. | Semiconductor manufacturing using artificial intelligence |
| US10727029B2 (en) * | 2017-07-10 | 2020-07-28 | Reno Technologies, Inc | Impedance matching using independent capacitance and frequency control |
| US11476091B2 (en) | 2017-07-10 | 2022-10-18 | Reno Technologies, Inc. | Impedance matching network for diagnosing plasma chamber |
| US11393659B2 (en) | 2017-07-10 | 2022-07-19 | Reno Technologies, Inc. | Impedance matching network and method |
| US11101110B2 (en) | 2017-07-10 | 2021-08-24 | Reno Technologies, Inc. | Impedance matching network and method |
| US10714314B1 (en) | 2017-07-10 | 2020-07-14 | Reno Technologies, Inc. | Impedance matching network and method |
| US11289307B2 (en) | 2017-07-10 | 2022-03-29 | Reno Technologies, Inc. | Impedance matching network and method |
| JP6772117B2 (ja) | 2017-08-23 | 2020-10-21 | 株式会社日立ハイテク | エッチング方法およびエッチング装置 |
| US10536130B2 (en) | 2017-08-29 | 2020-01-14 | Mks Instruments, Inc. | Balancing RF circuit and control for a cross-coupled SIMO distribution network |
| JP6963097B2 (ja) | 2019-04-22 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
| KR102629845B1 (ko) | 2020-06-16 | 2024-01-29 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 방법 |
| US11348761B2 (en) * | 2020-09-04 | 2022-05-31 | Tokyo Electron Limited | Impedance matching apparatus and control method |
| KR102709624B1 (ko) | 2021-10-21 | 2024-09-26 | 주식회사 히타치하이테크 | 에칭 방법 및 에칭 장치 |
| JP7498369B2 (ja) | 2022-04-26 | 2024-06-11 | 株式会社日立ハイテク | プラズマ処理方法 |
| US12518975B2 (en) | 2022-04-28 | 2026-01-06 | Hitachi High-Tech Corporation | Etching method |
| US12020902B2 (en) | 2022-07-14 | 2024-06-25 | Tokyo Electron Limited | Plasma processing with broadband RF waveforms |
| CN115696709B (zh) * | 2022-12-28 | 2023-03-21 | 江苏奥文仪器科技有限公司 | 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置 |
| CN117970001B (zh) * | 2024-02-04 | 2025-09-09 | 哈尔滨工业大学 | 一种sdbd离子风发动机能量损耗的分析方法及系统 |
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-
2001
- 2001-12-28 US US10/028,312 patent/US6677711B2/en not_active Expired - Lifetime
-
2002
- 2002-05-28 TW TW091111268A patent/TW550978B/zh not_active IP Right Cessation
- 2002-06-04 WO PCT/US2002/017386 patent/WO2002101784A1/en not_active Ceased
- 2002-06-04 JP JP2003504434A patent/JP4897195B2/ja not_active Expired - Fee Related
- 2002-06-04 CN CN028115635A patent/CN1515018B/zh not_active Expired - Lifetime
- 2002-06-04 KR KR1020037015780A patent/KR101048635B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8518211B2 (en) | 2002-12-20 | 2013-08-27 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004535039A (ja) | 2004-11-18 |
| KR20040020912A (ko) | 2004-03-09 |
| US6677711B2 (en) | 2004-01-13 |
| WO2002101784A1 (en) | 2002-12-19 |
| KR101048635B1 (ko) | 2011-07-12 |
| CN1515018A (zh) | 2004-07-21 |
| WO2002101784B1 (en) | 2004-05-27 |
| CN1515018B (zh) | 2010-10-06 |
| JP4897195B2 (ja) | 2012-03-14 |
| US20020185227A1 (en) | 2002-12-12 |
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